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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Time-resolved photoluminescence (TRPL) with two excitation wavelengths – 670 (standard) and 405 nm – was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the use of Mg y Zn 1-y O buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for Mg y Zn 1-y O/CdSe x Te 1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSe x Te 1-x films grown on Al 2 O 3 , which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

cadmium telluride↗
DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5×l0 15 cc -1 and external radiative efficiency of over 2 % in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

Munshi, Amit H.↗
DOE OSTI2025

The effects of antimony incorporation on the optoelectronic properties of Cd(Se,Te) photovoltaics

One historical limitation of CdTe PV devices has been the open circuit voltage (VOC) deficit (difference between theoretical maximum VOC and measured values). While non-radiative recombination at extended structural defects and interfaces negatively impacts VOC, intentionally adding impurities (dopants) to increase the concentration of free carriers in the photovoltaic (PV) absorber material can increase the VOC. In this contribution we present a detailed analysis of the Sb doped CdTe and the Cd(Se,Te) alloy system via electron beam induced current (EBIC) measurements and the presence as well as spatial distribution of defect levels through cathodoluminescence spectrum imaging (CLSI).

14 SOLAR ENERGY↗
DOE OSTI2020

Task 12 PV Sustainability - Life Cycle Inventories and Life Cycle Assessments of Photovoltaic Systems

Life Cycle Assessment (LCA) is a structured, comprehensive method of quantifying material- and energy-flows and their associated impacts in the life cycles of products (i.e., goods and services). One of the major goals of IEA PVPS Task 12 is to provide guidance on assuring consistency, balance, transparency and quality of LCA to enhance the credibility and reliability of the results. The current report presents the latest consensus life cycle inventories among the authors, PV LCA experts in North America, Europe, Asia and Australia. At this time consensus is limited to four technologies for which there are well-established and up-to-date life cycle inventory (LCI) data (mono- and multi-crystalline Si, CdTe, CIGS, as well as one emerging technology (perovskite silicon tandem). LCIs are necessary for LCA and the availability of such data is often the greatest barrier for conducting LCA. The Task 12 LCA experts have put great efforts in gathering and compiling the LCI data presented in this report. These include detailed inputs and outputs during manufacturing of cell, wafer, module, and balance-of-system (i.e., structural and electrical components) that were estimated from actual production and operation facilities. In addition, data are presented to enable analyses of various types of PV installations; these include operational data of rooftop and ground-mount PV systems and country-specific PV-mixes. The LCI datasets presented in this report are the latest that are available to the public describing the status in 2018 for crystalline Si (some manufacturing data from 2011 were not updated), 2015 and 2017-2018 for CdTe, 2010 for CIGS, 2010 for HCPV, and 2017 for perovskite silicon tandem technology.

14 SOLAR ENERGY↗
DOE OSTI2025

Spin-Polarized Electron Sources Based on Group II-VI Compounds Grown by Atomic Layer Deposition

This project explored ALD as an alternative growth technique for II–VI photocathodes and assessed CdTe for spin-polarized electron production. Working with BNL (Cultrera group), we established the workflow to measure QE and spin polarization using BNL’s Mott polarimeter, and we prepared both conventional Cs/O NEA activation and a heterostructure NEA route leveraging an ultrathin Cs2Te overlayer. The latter provides a pragmatic activation alternative while maintaining photoexcitation primarily in CdTe.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Upstream Extraction of Tellurium from Copper Concentrates

A major barrier to increasing CdTe PV module production is the availability of tellurium (Te), an element necessary to manufacture CdTe PV cells that currently has a very limited supply. Most Te is obtained from ore extracted for copper mining, but the current processing methods only extract 3-4% of the available Te in this ore, with the rest being discarded during other processing steps. This project aims to increase Te supply by developing an innovative extraction method that will recover more Te from the copper ore earlier in the process. This method will also extract toxic elements like antimony and arsenic, making the copper mining process more environmentally friendly.

14 SOLAR ENERGY↗
DOE OSTI2021

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10 10 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241 Am.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5x1015 cc-1 and external radiative efficiency of over 2% in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

14 SOLAR ENERGY↗
DOE OSTI2021

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO: Preprint

Time-resolved photoluminescence (TRPL) with two excitation wavelengths – 670 (standard) and 405 nm – was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the use of Mg y Zn 1-y O buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for Mg y Zn 1-y O/CdSe x Te 1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSe x Te 1-x films grown on Al 2 O 3 , which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

cadmium telluride↗
DOE OSTI2024

Updated sustainability status of cadmium telluride thin‐film photovoltaic systems and projections

This paper provides a comprehensive assessment of the up-to-date life-cycle sustainability status of cadmium-telluride based photovoltaic (PV) systems. Current production modules (Series 6 and Series 7) are analyzed in terms of their energy performance and environmental footprint and compared with the older series 4 module production and current single-crystalline Silicon (sc-Si) module production. For fixed-tilt systems with Series 6 modules operating under average US irradiation of 1800 kWh/m 2 /year, the global warming potential (GWP) is reduced from 16 g CO 2eq /kWh in Series 4 systems to 10 CO 2 eq /kWh in Series 6 systems. For operation in US-SW irradiation of 2300 kWh/m 2 /year, the GWP is reduced from 11 to 8 CO 2eq /kWh and for 1-axis tracking systems operating in Phoenix, Arizona, with point-of array irradiation of 3051 kWh/m 2 /year the GWP is reduced to 6.5 CO 2eq /kWh. Similar reductions have happened in all environmental indicators. Energy payback times (EPBT) of currently installed systems range from 0.6 years for fixed–tilt ground–mounted installations at average US irradiation at latitude tilt installations to 0.3 years for one-axis trackers at high US-SW irradiation, considering average fossil-fuel dominated electricity grids with fuel to electricity conversion efficiency of 0.3. The resulting energy return on energy investment (EROI) also depends on the conversion efficiency of the electricity grid and on the operation life expectance. For a 30-year operational life and grid conversion efficiency of 0.3, EROI ranges from 50 (at US average irradiation) to 70 for US-SW irradiation. The EROI declines with increased grid conversion efficiency; for CdTe PV operating in south California with grid conversion efficiency of 49%, the EROI is about 50 and is projected to fall to 30 when the state's 2030 target of 80% renewable energy penetration materializes. Material alternatives that show a potential of further reductions in degradation rates and materials for enhanced encapsulation that would enable longer operation lives have also been investigated. A degradation rate of 0.3%/year, which has been verified by accelerated testing, is assumed in 30-year scenarios; this is projected to be reduced to 0.2%/year in the near-term and potentially to 0.1%/year in the longer term. With such low degradation rates and enhanced edge-sealing, modules can last 40- to 50-years. Consequently, all impact indicators will be proportionally reduced while EROI will increase. This detailed LCA was conducted according to ISO standards and IEA PVPS Task 12 guidelines. Furthermore, the study revealed that the choices of system models, methods and temporal system boundaries can significantly impact the results and points out to the need to include assumptions regarding these choices in the “transparency in reporting” requirements listed in the IEA PVPS Task 12 Guidelines.

14 SOLAR ENERGY↗
DOE OSTI2021

Sputter-deposited CdMgTe for rear contact to CdSeTe/CdTe solar cells

CdTe-based photovoltaic device performance improvement is predominantly limited by open-circuit voltage. This work approaches the voltage deficit challenge through the incorporation of a cadmium magnesium telluride (CdMgTe) electron reflector layer at the back of 1.5- μm CdSeTe/CdTe absorbers to reduce back-surface recombination through a conduction band offset. A sputtered CdMgTe electron reflector layer permitted low fabrication temperatures and circumvented the intolerance of CdMgTe to thermal processing present in traditional close-space sublimation (CSS)-deposited CdMgTe devices. Here, we demonstrate that sputtered CdMgTe simultaneously promotes the retention of chlorine passivation and magnesium which is not feasible with CSS fabrication. We also show the importance of the Cu and Te back contact order in CdMgTe devices. Through the optimization of the sputtered CdMgTe substrate temperature, doping, and back structure configuration, 1.5 μm CdSeTe/CdTe devices with a sputtered CdMgTe layer achieved an efficiency of 16.0%, significantly higher than with CSS CdMgTe, and demonstrated partial enactment of electron-reflector behavior.

14 SOLAR ENERGY↗
DOE OSTI2023

Oxygen Management to Avoid Photo-Inactive Cd(S,Se) for Efficient Cd(Se,Te) Solar Cells

Our previous work has demonstrated that the formation of a penternary cadmium chalcogenide Cd(O,S,Se,Te) region can significantly reduce the front interface recombination in Cd(Se,Te)-based thin-film solar cells. In this work, we have shown that oxygen management during the device fabrication is crucial to form this region. While both the CdS and CdSe layer depositions and the postdeposition CdCl2 treatment should be conducted in the presence of oxygen, the CdTe deposition should be conducted in an oxygen-free atmosphere. Improper oxygen management leads to low device performance due to the formation of a photoinactive Cd(S,Se) region and reduced absorber quality. Additionally, we investigated the carrier transport and collection properties in devices with photoinactive Cd(S,Se) and photoactive Cd(O,S,Se,Te) at the front interface to gain comprehensive understanding of the mechanisms that resulted in improved efficiencies approaching 20%.

CdTe deposition↗
DOE OSTI2025

Doping with phosphorus reduces anion vacancy disorder in CdSeTe semiconductors enabling higher solar cell efficiency

Doping is used in many pn junction devices, such as polycrystalline solar cells, to increase the strength of the junction field to assist charge carrier collection and thus partially mitigate nonradiative recombination losses. We demonstrate a different doping characteristic for inorganic solar cells: using dopants to reduce charge carrier trapping and electronic band tails. Alloying CdTe with Se to form CdSeTe semiconductor reduced recombination, but CdSeTe has more complex defect states which can limit further efficiency gains due to charge carrier trapping and trap-limited mobility. Doping CdSeTe with P (but not N, As, or Sb in this study) reduces band tails (Urbach energies) and lessens the impact of the near valence band trap states, with ambipolar mobilities improving to >50 cm 2 V −1 s −1 , fill factor increasing from 76% to 79%, and efficiencies increasing by 0.9% absolute. Simulations are used to show how such defect reduction improves performance in the radiative limit.

14 SOLAR ENERGY↗
DOE OSTI2023

A Dive into Underwater Solar Cells

Our oceans are vast, mostly unexplored and difficult to monitor. Large-scale implementation of a fully autonomous 'Internet of Underwater Things' would transform how we collect and share data from this domain; however, deployment is prohibited by the lack of persistent power sources. In principle, underwater solar-energy generation can complement the use of batteries and provide a solution, although dedicated research is needed since traditional silicon solar cells do not perform well underwater due to water's strong absorption of near-infrared light. In this Perspective we present examples of solar-powered underwater applications and discuss which types of solar-harvesting materials could be appropriate, including GaInP variants, CdTe, organic semiconductors, and perovskite semiconductors. We also discuss challenges that need to be addressed, such as the development of effective antifouling coatings and new certification standards given that underwater conditions are starkly different from those in terrestrial environments.

antifouling coatings↗
DOE OSTI2020

Chapter 8: Time-Resolved Photoluminescence Characterization of Polycrystalline Thin-Film Solar Cells

This chapter describes some photoluminescence (PL) approaches to characterize thin film solar cells with emphasis on time-resolved methods. Spectral PL analysis is complementary and was recently reviewed. Since TRPL is not very commonly used in PV characterization, we consider interface and bulk recombination in the test structures and in devices, briefly describe charge-carrier transport and recombination microscopy, and finally, summarize and compare some CdTe, CdSeTe, CIGS, kesterite, and perovskite EO characteristics.

bulk recombination↗