Search NASA⌕ Search

SEARCH · Search NASA

Results for “Electroluminescence”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Novel Solar Panel Defect Detection Hardware and Defect Analysis Software (CRADA Final Report)

The CRADA work involved 1) the development of a machine learning software architecture to automatically detect defects within Electroluminescence images of solar panels, and 2) demonstrations of the usefulness of UV Fluorescence (UVF) defect detection for a wide variety of defect types across many different solar panel technologies with different field or environmental chamber histories.

14 SOLAR ENERGY↗
DOE OSTI2021

The Event Detection System in the NEXT-White Detector

This article describes the event detection system of the NEXT-White detector, a 5 kg high pressure xenon TPC with electroluminescent amplification, located in the Laboratorio Subterráneo de Canfranc (LSC), Spain. The detector is based on a plane of photomultipliers (PMTs) for energy measurements and a silicon photomultiplier (SiPM) tracking plane for offline topological event filtering. The event detection system, based on the SRS-ATCA data acquisition system developed in the framework of the CERN RD51 collaboration, has been designed to detect multiple events based on online PMT signal energy measurements and a coincidence-detection algorithm. Implemented on FPGA, the system has been successfully running and evolving during NEXT-White operation. The event detection system brings some relevant and new functionalities in the field. A distributed double event processor has been implemented to detect simultaneously two different types of events thus allowing simultaneous calibration and physics runs. This special feature provides constant monitoring of the detector conditions, being especially relevant to the lifetime and geometrical map computations which are needed to correct high-energy physics events. Other features, like primary scintillation event rejection, or a double buffer associated with the type of event being searched, help reduce the unnecessary data throughput thus minimizing dead time and improving trigger efficiency.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Comparative Analysis of Hotspot Stress Endurance in Pristine and Thermal Cycled Prestressed Glass–Glass Photovoltaic Modules

Hotspots pose a significant long-term reliability challenge in photovoltaic (PV) modules that can have a detrimental impact on the efficiency, safety, and financial viability of a PV system. This paper aims to evaluate the endurance of hotspot stress in pristine and prestressed glass–glass (GG) modules. The accelerated prestressing was conducted for 600 thermal cycles (TC600) to represent decades of field exposure. GG modules are quickly becoming an alternative to the traditional glass–backsheet (GB) modules that have been the industry standard. Unlike other conventional studies that subject only pristine modules to hotspot stress, this paper evaluates the performance of an accelerated/simulated field-aged GG module (using TC600) and a pristine GG module. Pre- and post-characterizations were performed before and after each test to determine changes in electrical performance and observe any defects in GG modules. During the hotspot test, an approximately 200 °C maximum cell temperature was observed with a cell shading of 25% (the worst-case shading ratio). After the hotspot test, electroluminescence imaging indicated that most cells in the prestressed GG module exhibited severe damage whereas no significant defects were evident in the pristine GG module where the prestressed GG module degraded 8.2% and the pristine GG module degraded 1.5% in maximum power. These findings are critical for the industry, considering that GG bifacial modules will dominate the market.

14 SOLAR ENERGY↗
NASA NTRS1964

Pneumotachometer counts respiration rate of human subject

To monitor breaths per minute, two rate-to-analog converters are alternately used to read and count the respiratory rate from an impedance pneumograph sequentially displayed numerically on electroluminescent matrices.

Graham, O.↗
NASA NTRS1966

Panels illuminated by edge-lighted lens technique

Electroluminescent lamps used to edge-light a specially ground lens provide nonglare, reduced eye strain panel illumination. There is no noticeable falloff in brightness along the lens edge. Light intensity diminishes toward the lens center. A slight halo, observed along the lens edge, has no detrimental effect.

Haag, G. E.↗
NASA NTRS1969

Silicon carbide diode for increased light output

Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.

Griffiths, L. B.↗
NASA NTRS1970

Electro-optical time marker for high-speed cameras

Electro-optical device converts high-frequency electrical pulses into permanent optical records on film. Accurate, well defined images are formed of electronic pulses having repetition rates greater than 10,000 pulses/sec and pulse widths of 20 microseconds or less. Small electronic switch drives a silicon carbide electroluminescent diode.

Copeland, J. T., Jr.↗
NASA NTRS1971

Development of reverse biased p-n junction electron emission

A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.

Fowler, P.↗
NASA NTRS1972

Improvements in solid state radiographic converter screens.

Description of two different kinds of solid-state radiographic converter screens which have been developed. After briefly reviewing the working principles of the solid-state image converter - a sandwich type structure consisting of a photoconductive layer and an electroluminescent layer with a semiconductive layer and a black layer between them, two different kinds of radiographic converter screens are described - a radiographic amplifier screen that can be used as a substitute for the fluoroscopic screen, and a radiographic storage screen that can be used instead of radiographic films. The construction of both kinds of converters is fundamentally the same, the only difference being in the sensing photoconductive material. The radiographic amplifier screen has a moderately fast response, while the radiographic storage screen displays the image long after the irradiation is stopped.

Szepesi, Z.↗
NASA NTRS1975

Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices

The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

Chu, T. L.↗
NASA NTRS1976

Two-dimensional radiant energy array computers and computing devices

Two dimensional digital computers and computer devices operate in parallel on rectangular arrays of digital radiant energy optical signal elements which are arranged in ordered rows and columns. Logic gate devices receive two input arrays and provide an output array having digital states dependent only on the digital states of the signal elements of the two input arrays at corresponding row and column positions. The logic devices include an array of photoconductors responsive to at least one of the input arrays for either selectively accelerating electrons to a phosphor output surface, applying potentials to an electroluminescent output layer, exciting an array of discrete radiant energy sources, or exciting a liquid crystal to influence crystal transparency or reflectivity.

Schaefer, D. H.↗
NASA NTRS1978

Coming cockpit avionics

Digital and display technology combined with human factors research under development today are expected to become operational in the commercial aircraft of the 1990s. Attention is given to reducing the pilot's workload and increasing aircraft reliability through integration of electronic systems, and through multi-mode displays. Recent advances in display technology are outlined, including electroluminescent panels, beam penetration color CRTs, liquid crystal modules, and LED panels and indicators. Research cockpits are described in terms of simplification of aircraft systems evaluation and control.

Mciver, D.↗
NASA NTRS1980

Advances in tunable diode laser technology

The improvement of long-term reliability, the purification of mode properties, and the achievement of higher-temperature operation were examined. In reliability studies a slow increase in contact resistance during room temperature storage for lasers fabricated with In-Au or In-Pt contacts was observed. This increase is actually caused by the diffusion of In into the surface layer of laser crystals. By using a three layered structure of In-Au-Pt or In-Pt-Au, this mode of degradation was reduced. In characterizing the mode properties, it was found that the lasers emit in a highly localized, filamentary manner. For widestripe lasers the emission occurs near the corners of the junction. In order to achieve single-mode operation, stripe widths on the order of 8-10 micrometers are needed. Also, it was found that room temperature electroluminescence is possible near 4.6 micrometers.

Lo, W.↗
NASA NTRS1979

Crystal growth of sulfide materials from alkali polysulfide liquids

The fluids experiment system was designed for low temperature solution growth, nominally aqueous solution growth. The alkali polysulfides, compositions in the systems Na2S-S and K2S-S form liquids in the temperature range of 190 C to 400 C. These can be used as solvents for other important classes of materials such as transition metal and other sulfides which are not soluble in aqueous media. Among these materials are luminescent and electroluminescent crystals whose physical properties are sensitive functions of crystal perfection and which could, therefore, serve as test materials for perfection improvement under microgravity conditions.

White, W. B.↗