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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Evaluation of 2 possible further developments of the UK in-flight radiation warning meter for SSTS

A mass reduction of the moderator and the response to the nucleon flux, responsible for the tissue-star component of the total-dose equivalent rate using a high atomic number material, are discussed. Radiation situations at SST cruising altitudes (approximately 20 km) due to solar proton flares were simulated in the stratosphere and on the ground. Actual stratospheric situations due to galactic cosmic radiation with a limited range of quality factor values (2-4) were encountered during slow ascents by balloons to 36 km. Synthetic situations obtained from high and low energy acclerator radiations were used to obtain radiation distributions having a larger range of quality factor values (11/2-9) than experienced in the stratosphere. The measurements made in these simulations related to the directly ionizing, neutron and tissue-star components of dose-equivalent rate. Due to the restricted range of neutron spectra encountered in the stratosphere, a significant mass reduction of the moderator by 4 kg was made, with the moderator clad with cadmium or some other slow neutron absorber.

Wilson, I. J.↗
NASA NTRS1973

Radiolytic preparation of anhydrous tin (2) chloride

Anhydrous tin (2) chloride (SnCl2) is prepared by radiolysis with high energy electrons of a tin (4) chloride (SnCl4) solution in heptane. The SnCl4 is reduced to insoluble SNCl2. The energy yield, G(SnCl2), molecules of SnCl2, produced per 100 eV, increases with SnCl4 concentration from 1.6 at 0.15 M SnCl4 to 3.1 at 3.0 M SnCl4. Other parameters such as temperature total dose and beam current have little influence on G(SnCl2). The method may be used to prepare other metal halides if the higher valence, more covalent metal halide is soluble in aliphatic hydrocarbons and the lower more ionic metal halide is insoluble. The reaction mechanism is discussed; the radiolysis of both heptane and SnCl4 is involved. At high SnCl4 concentration G(SnCl2) appears to be limited by the yield of SnC13 radicals.

Philipp, W. H.↗
NASA NTRS1973

Biostack experiment

The Apollo 17 biostack experiment to establish the biological efficiency of individual heavy nuclei particles of galactic cosmic radiation are reported. The experiment theory, interaction of heavy nuclei particles with biologic matter, and the total dose of cosmic ionizing radiation are discussed along with the radiation effects of heavy nuclei on Artemia salina eggs, and Bacillus subtilis.

H Buecker↗
NASA NTRS1975

Effects of ionizing radiation on CCD's

The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.

Hartsell, G. A.↗
NASA NTRS1974

Experiments on the origin of molecular chirality by parity non-conservation during beta-decay

Experiments are described to test a theory for the origin of optical activity wherein the longitudinally polarized electrons resulting from parity violation during radioactive beta-decay, and their resulting circularly polarized bremsstrahlung, might interact asymmetrically with organic matter to yield optically active products. The historical background to this subject is briefly reviewed. Our experiments involve subjecting a number of racemic and optically active amino acid samples to a beta-radiation source for a period of 1.34 years (total dose: 411 Mrads), then examining them for any asymmetric effects by means of optical rotatory dispersion and analytical gas chromatography.

Bonner, W. A.↗
NASA NTRS1975

Na-D line emission from rock specimens by proton bombardment - Implications for emissions from Jupiter's satellite Io

The effectiveness of low-keV range protons in producing Na line emission from selected sodium-bearing rock and mineral samples is examined. Laboratory experiments show that substantial Na-D line emission is produced by 3- to 5-keV proton bombardment of silicate and halite rock powders. It is found that emission intensity and energy efficiency are directly proportional to sodium content and are dependent on total dose, dose rate, and proton energy. Na-D photon emission is considered to emanate predominantly from sputtered sodium slightly above the target surfaces. It is concluded that the Na-D line emission directly excited during surface sputtering by Jovian magnetospheric protons appears to be an observable component in the Jovian satellite Io emission.

Nash, D. B.↗
NASA NTRS1975

Hardening of MJS77 spacecraft against the Jupiter radiation belts

Results of the device characterization program to identify components of the Mariner Jupiter/Saturn spacecraft in need of radiation hardening to meet a total dose requirement of 5 trillion e/sq cm are presented. The parts to be tested, including bipolar transistors, JFETs, SCRs, CMOS devices, linear integrated circuits, Zener diodes and other radiation-sensitive parts, were identified by a worst case circuit analysis of the 20 major subsystems. The test samples were exposed to several levels of irradiation from a Dynamitron electron accelerator capable of producing a steady stream of electrons at energies up to 2.5 eV. The electrical parameters of the devices were measured immediately following irradiation to prevent annealing. CMOS devices and linear devices showed the most severe degradation in a moderate radiation environment, and significant degradation was produced at low current in bipolar transistors. Three methods used for screening a number of devices determined by circuit and shielding analyses to be unacceptable radiation-sensitive are described: diffusion and metallization lot screening; wafer lot screening; and irradiation-anneal screening.

W E Price↗
NASA NTRS1980

Preliminary results of fast neutron treatments in carcinoma of the pancreas

A group of 30 patients with adenocarcinoma of the pancreas including some patients with very advanced disease, were treated with the so-called mixed beam modality employing photon treatments three times per week and neutron treatments twice a week. Two hundred Rads or equivalent Rads (RBE 3.3) were given in daily fractions aiming at a total dose of 6000 Rads in 6 to 8 weeks. The treatments were well tolerated and significant palliation was achieved in 26 to 30 cases. Twelve months survival was 33 percent with a median survival of 7 months or 210 days. Treatment techniques and localization procedures are discussed.

Gahbauer, R.↗
NASA NTRS1981

Solid state microelectronics tolerant to radiation and high temperature

The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.

Draper, B. L.↗
NASA NTRS1981

An advanced, radiation hardened bulk CMOS/LSI technology

An advanced, second generation, bulk, Si-gate CMOS process is described. This process is capable of producing LSI and VLSI parts that are latch-up free and hardened to total dose levels in excess of 2 x 10 to the 5th rad-Si for applications in space and weapons radiation environments. Two memories designed to use this process are also described. Both circuits are 4096-bit, static CMOS RAMs.

Schroeder, J. E.↗
NASA NTRS1981

SEM analysis of ionizing radiation effects in an analog to digital converter /AD571/

The considered investigation is concerned with the study of the total-dose degradation mechanisms in an IIL analog to digital (A/D) converter. The A/D converter is a 10 digit device having nine separate functional units on the chip which encompass several hundred transistors and circuit elements. It was the objective of the described research to find the radiation sensitive elements by a systematic search of the devices on the LSI chip. The employed technique using a scanning electron microscope to determine the functional blocks of an integrated circuit which are sensitive to ionizing radiation and then progressively zeroing in on the soft components within those blocks, proved extremely successful on the AD571. Four functional blocks were found to be sensitive to radiation, including the Voltage Reference, DAC, IIL Clock, and IIL SAR.

Gauthier, M. K.↗
NASA NTRS1984

Radiation-Hardness Data For Semiconductor Devices

Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

Price, W. E.↗
NASA NTRS1983

Microcircuit radiation effects databank

This databank is the collation of radiation test data submitted by many testers and serves as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. It contains radiation sensitivity results from ground tests and is divided into two sections. Section A lists total dose damage information, and section B lists single event upset cross sections, I.E., the probability of a soft error (bit flip) or of a hard error (latchup).

Source record↗
NASA NTRS1983

Microcircuit radiation effects databank

Radiation test data submitted by many testers is collated to serve as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. Total dose damage information and single event upset cross sections, i.e., the probability of a soft error (bit flip) or of a hard error (latchup) are presented.

Source record↗
NASA NTRS1984

Space Radiation Effects on Graphite-Epoxy Composite Materials

Radiation effects on engineering properties, dimensional stability, and chemistry on state of the art composite systems were characterized. T300/934 graphite-epoxy composite was subjected to 1.0 MeV electron radiation for a total dose of 1.0 x 10(10) rads at a rate of 5.0 x 10(7) rads/hour. This simulates a worst case exposure equivalent to 30 years in space. Mechanical testing was performed on he 4-ply unidirectional laminates over the temperature range of -250 F (116K) to +250 F (394K). A complete set of in-plane tensile elastic and strength properties were obtained (E sub 1, E sub 2, nu sub 12, G sub 12, X sub T, Y sub T, and S). In addition electron microscopy was used to study and analyze the fracture surfaces of all specimens tested. Results indicate that little difference in properties is noted at room temperature, but significant differences are observed at both low and elevated temperatures.

Milkovich, S. M.↗
NASA NTRS1984

Electron radiation effects on the thermal expansion of graphite/resin composites

The effects of 1 MeV electron radiation on the thermal expansion characteristics of two graphite reinforced resin matrix composite systems were studied. Specimens of both graphite/epoxy (T300/5208) and graphite/polyimide (C6000/PMR15) were irradiated to a total dose of 6 x 10 to the 9th rads at two different rates. Dynamic mechanical analyses (DMA) were performed to study changes in resin chemistry. Thermal expansion results indicate that radiation did produce permanent residual strains of up to -70 x 10 to the -6th for the graphite/epoxy when exposed to temperatures up to +280 F. However, no permaanent changes in the coefficient of thermal expansion (CTE) were observed. No permanent residual strains or changes in the CTE attributable to radiation were observed for the graphite/polyimide specimens. DMA results indicate that electron radiation caused chemical changes in the epoxy matrix. These changes resulted in a lower glass transition temperature and broader 'rubbery region' which extended into the temperature range of the thermal expansion tests.

Bowles, D. E.↗
NASA NTRS1985

Studies of molecular properties of polymeric materials: Aerospace environmental effects on three linear polymers

The development of crystal handling techniques for reflection infrared spectroscopy and methods for the fabrication and testing of tensile specimens are discussed. Data from mechanical, ac and dc electrical, and electron paramagnetic resonance studies conducted to determine the effects of 0.1-MeV and 1.0-MeV electron radiation on Mylar, Kapton, Ultem, and metal-doped Ultem are presented. Total doses ranging from 1 X 10 to the 8 rads to 1 X 10 to the 10 rads and dose rates from 5 X 10 to the 7 rads/hr to 1 X 10 to the 9 rads/hr were employed. The results of a study on the effects of aircraft service-environment fluids on Ultem are also reported. The weights and mechanical properties of Ultem were evaluated before and after exposure to water, JP4, Skydrol, an antifreeze, and a paint stripper.

Harries, W. L.↗
NASA NTRS1987

More on Effects of Radiation on Electronics

Third volume in series of bibliographies on radiation effects on electronics covers years 1982 and 1983. Volume summarizes literature on effects of total doses of radiation and of test environments.

Bouquet, Frank L.↗