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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Influence of Thermocapillary Flow on Capillary Stability: Long Float-Zones in Low Gravity

A model problem is posed to study the influence of flow on the interfacial stability of a nearly cylindrical liquid bridge for lengths near its circumference (the Plateau-Rayleigh limit). The flow is generated by a shear stress imposed on the deformable interface. The symmetry of the imposed shear stress mimics the thermocapillary stress induced on a float-zone by a ring heater (i.e. a full zone). Principal assumptions are (1) zero gravity, (2) creeping flow, and (3) that the imposed coupling at the free surface between flow and temperature fields is the only such coupling. A numerical solution, complemented by a bifurcation analysis, shows that bridges substantially longer than the Plateau-Rayleigh limit are possible. An interaction of the first two capillary instabilities through the stress-induced flow is responsible. Time-periodic standing waves are also predicted in certain parameter ranges. Motivation comes from extra-long float-zones observed in MEPHISTO space lab experiments (June 1994).

Chen, Yi-Ju↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone Under Microgravity

USA Several microgravity experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4 mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies ? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS1999

The Influence of Static and Rotating Magnetic Fields on Heat and Mass Transfer in Silicon Floating Zones

Hear and mass transfer in float-zone processing are strongly influenced by convective flows in the zone. They are caused by buoyancy convection, thermocapillary (Marangoni) convection, or artificial sources such as rotation and radio frequency heating. Flows in conducting melts can be controlled by the use of magnetic fields, either by damping fluid motion with static fields or by generating a def@ned flow with rotating fields. The possibilities of using static and rotating magnetic fields in silicon floating-zone growth have been investigated by experiments in axial static fields up to ST and in transverse rotating magnetic fields up to 7.S mT. Static fields of a few 100 MT already suppress most striations but are detrimental to the radial segregation by introducing a coring effect. A complete suppression of dopant striations caused by time-dependent thermocapillary convection and a reduction of the coring to insignificant values, combined with a shift of the axial segregation profile towards a more diffusion-limited case, is possible with static fields ? 1T. However, under certain conditions the use of high axial magnetic fields can lead to the appearance of a new type of pronounced dopant striations, caused by thermoelec:romagnetic convection. The use of a transverse rotating magnetic field influences the microscopic segregation at quite low inductions, of the order of a few mT. The field shifts time-dependent flows and the resulting striation patterns from a broad range of low frequencies at high amplitudes to a few high frequencies at low amplitudes

Croell, Arne↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several pg experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several earlier (micro)g experiments have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed on the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Maran-goni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies f? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS1999

The Influence of Static and Rotating Magnetic Fields on Heat and Mass Transfer in Silicon Floating Zones

Heat and mass transfer in float-zone processing are strongly influenced by convective flows in the zone. They are caused by buoyancy convection, thermocapillary (Marangoni) convection, or artificial sources such as rotation and radio-frequency heating. Flows in conducting melts can be controlled by the use of magnetic fields, either by damping fluid motion with static fields or by generating a defined flow with rotating fields. The possibilities of using static and rotating magnetic fields in silicon floating-zone growth have been investigated by experiments in axial static fields up to 5 T and in transverse rotating magnetic fields up to 7.5 mT. Static fields of a few 100 mT already suppress most striations but are detrimental to the radial segregation by introducing a coring effect. A complete suppression of dopant striations caused by time-dependent thermocapillary convection and a reduction of the coring to insignificant values, combined with a shift of the axial segregation profile toward a more diffusion-limited case, is possible with static fields greater than or equal to 1 T. However, under certain conditions the use of high axial magnetic fields can lead to the appearance of a new type of pronounced dopant striations, caused by thermoelectromagnetic convection. The use of a transverse rotating magnetic field influences the microscopic segregation at quite low inductions, of the order of a few millitesla. The field shifts time- dependent flows and the resulting striation patterns from a broad range of low frequencies at high amplitudes to a few high frequencies at low amplitudes.

Croll, A.↗
NASA NTRS2000

Detached and Floating-Zone Growth of Semiconductor Crystals on the ISS

Understanding the mechanism of detached Bridgman growth and establishing the growth of large scale germanium-silicon crystals by the float-zone technique are the key points of the project "RDGS - Reduction of Defects in Germanium-Silicon". The contact angle of the melt and the growth angle of the crystal are essential parameters which allow a controlled use of detached growth. The contact angle was determined for a variety of different substrates and melt compositions; pBN showed the highest value for pure germanium as well as for germanium-rich GeSi melts. The growth angle of Ge(sub 0.95) Si(sub 0.05) was measured to be 8.5-10.5 degrees which concurs with the values of pure germanium and silicon, respectively. The temperature dependence and the concentration dependence of the surface tension were determined for concentrations up to 10at% silicon (partial derivative (gamma)/partial derivative T=-0.08 (raised dot) 10(exp -3)N/m (raised dot) K, partial derivative (gamma)/partial derivative (C)=2.2 (raised dot) 10(exp -3)N/m (raised dot) at%). Using these values, the critical Marangoni number indicating the transition to time-dependent thermocapillary flow will be exceeded for the growth of large scale float-zone crystals onboard the ISS. Therefore, suitable tools for flow control are required.

Dold, P.↗
NASA NTRS2003

Experiments on Suppression of Thermocapillary Oscillations in Float-Zones by High-Frequency End-Wall Vibrations

Experiments to suppress thermocapillary oscillations using high-frequency vibrations were performed on float-zones. Such a float-zone is formed by melting one end of a vertically held sodium nitrate-barium nitrate crystal rod in contact with a hot surface at the top. In the experiments, when thermocapillary oscillation occurred, the bottom end of the rod was vibrated at a high frequency to generate fine ripples on the melt surface, driving a streaming flow in the opposite direction to that of the thermocapillary convection. It was observed that by generating a sufficiently strong streaming flow the thermocapillary flow can be offset enough such that the associated thermocapillarity oscillations can be quenched.

Anilkumar, A. V.↗
NASA NTRS1949

Systematic model researches on the stability limits of the DVL series of float designs

To determine the trim range in which a seaplane can take off without porpoising, stability tests were made of a Plexiglas model, composed of float, wing, and tailplane, which corresponded to a full-size research airplane. The model and full-size stability limits are in good agreement. After all structural parts pertaining to the air frame were removed gradually, the aerodynamic forces replaced by weight forces, and the moment of inertia and position of the center of gravity changed, no marked change of limits of the stable zone was noticeable. The latter, therefore, is for practical purposes affected only by hydrodynamic phenomena. The stability limits of the DVL family of floats were determined by a systematic investigation independent of any particular sea-plane design, thus a seaplane may be designed to give a run free from porpoising.

Sottorf, W.↗
NASA NTRS2006

A High-Level Formalization of Floating-Point Number in PVS

We develop a formalization of floating-point numbers in PVS based on a well-known formalization in Coq. We first describe the definitions of all the needed notions, e.g., floating-point number, format, rounding modes, etc.; then, we present an application to polynomial evaluation for elementary function evaluation. The application already existed in Coq, but our formalization shows a clear improvement in the quality of the result due to the automation provided by PVS. We finally integrate our formalization into a PVS hardware-level formalization of the IEEE-854 standard previously developed at NASA.

Boldo, Sylvie↗
NASA NTRS1993

Contactless heater floating zone refining and crystal growth

Floating zone refining or crystal growth is carried out by providing rapid relative rotation of a feed rod and finish rod while providing heat to the junction between the two rods so that significant forced convection occurs in the melt zone between the two rods. The forced convection distributes heat in the melt zone to allow the rods to be melted through with a much shorter melt zone length than possible utilizing conventional floating zone processes. One of the rods can be rotated with respect to the other, or both rods can be counter-rotated, with typical relative rotational speeds of the rods ranging from 200 revolutions per minute (RPM) to 400 RPM or greater. Zone refining or crystal growth is carried out by traversing the melt zone through the feed rod.

Kou, Sindo↗
NASA NTRS2004

A Micromachined Geometric Moire Interferometric Floating-Element Shear Stress Sensor

This paper presents the development of a floating-element shear stress sensor that permits the direct measurement of skin friction based on geometric Moir interferometry. The sensor was fabricated using an aligned wafer-bond/thin-back process producing optical gratings on the backside of a floating element and on the top surface of the support wafer. Experimental characterization indicates a static sensitivity of 0.26 microns/Pa, a resonant frequency of 1.7 kHz, and a noise floor of 6.2 mPa/(square root)Hz.

Horowitz, S.↗
NASA NTRS2004

A Wafer-Bonded, Floating Element Shear-Stress Sensor Using a Geometric Moire Optical Transduction Technique

This paper presents a geometric Moir optical-based floating-element shear stress sensor for wind tunnel turbulence measurements. The sensor was fabricated using an aligned wafer-bond/thin-back process producing optical gratings on the backside of a floating element and on the top surface of the support wafer. Measured results indicate a static sensitivity of 0.26 microns/Pa, a resonant frequency of 1.7 kHz, and a noise floor of 6.2 mPa/(square root)Hz.

Horowitz, Stephen↗
NASA NTRS2008

Floating Pressure Conversion and Equipment Upgrades of Two 3.5kw, 20k, Helium Refrigerators

Two helium refrigerators, each rated for 3.5KW at 20K, are used at NASA s Johnson Space Center (JSC) in Building No. 32 to provide cryo-pumping within two large thermal-vacuum chambers. These refrigerators were originally commissioned in 1996. Equipment refurbishment and upgrades to the controls of these refrigerators were recently completed. This paper describes some of the mechanical and control issues that necessitated the equipment refurbishment and controls change-over. It will describe the modifications and the new process control which allows the refrigerators to take advantage of the Ganni Cycle "floating pressure" control technology. The upgrades -- the controls philosophy change-over to the floating pressure control technology and the newly refurbished equipment -- have greatly improved the performance, stability, and efficiency of these two refrigerators. The upgrades have also given the operators more information and details about the operational status of the main components (compressors, expanders etc.) of the refrigerators at all operating conditions (i.e.: at various loads in the vacuum chambers). Capabilities, configuration, and performance data pre, and post, upgrading will be presented.

Homan, Jonathan↗
NASA NTRS2009

Data Analysis of the Floating Potential Measurement Unit aboard the International Space Station

We present data from the Floating Potential Measurement Unit (FPMU), that is deployed on the starboard (S1) truss of the International Space Station. The FPMU is a suite of instruments capable of redundant measurements of various plasma parameters. The instrument suite consists of: a Floating Potential Probe, a Wide-sweeping spherical Langmuir probe, a Narrow-sweeping cylindrical Langmuir Probe, and a Plasma Impedance Probe. This paper gives a brief overview of the instrumentation and the received data quality, and then presents the algorithm used to reduce I-V curves to plasma parameters. Several hours of data is presented from August 5th, 2006 and March 3rd, 2007. The FPMU derived plasma density and temperatures are compared with the International Reference Ionosphere (IRI) and USU-Global Assimilation of Ionospheric Measurement (USU-GAIM) models. Our results show that the derived in-situ density matches the USU-GAIM model better than the IRI, and the derived in-situ temperatures are comparable to the average temperatures given by the IRI.

Barjatya, Aroh↗
NASA NTRS2011

SiC growth by Solvent-Laser Heated Floating Zone

In an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal growth method. This paper discusses the results of these initial experiments, which includes: source material, laser heating, and analysis of the first ever Solvent-LHFZ SiC crystals (synchrotron white beam x-ray topography confirmed).

Woodworth, Andrew A.↗
NASA NTRS2012

A New Method to Grow SiC: Solvent-Laser Heated Floating Zone

The solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.

Woodworth, Andrew A.↗