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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14

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NASA NTRS1985

Flat-plate solar array project process development area process research of non-CZ silicon material

Three sets of samples were laser processed and then cell processed. The laser processing was carried out on P-type and N-type web at laser power levels from 0.5 joule/sq cm to 2.5 joule/sq cm. Six different liquid dopants were tested (3 phosphorus dopants, 2 boron dopants, 1 aluminum dopant). The laser processed web strips were fabricated into solar cells immediately after laser processing and after various annealing cycles. Spreading resistance measurements made on a number of these samples indicate that the N(+)P (phosphorus doped) junction is approx. 0.2 micrometers deep and suitable for solar cells. However, the P(+)N (or P(+)P) junction is very shallow ( 0.1 micrometers) with a low surface concentration and resulting high resistance. Due to this effect, the fabricated cells are of low efficiency. The maximum efficiency attained was 9.6% on P-type web after a 700 C anneal. The main reason for the low efficiency was a high series resistance in the cell due to a high resistance back contact.

Source record↗

NASA NTRS1991

Three dimensional numerical investigation of gravitational and solutal effects in a cylindrical cell

Three-dimensional numerical computations of natural convection in a cylindrical ampoule (L/R = 4) are presented for a Ga-doped Ge melt. The ampoule is maintained at isothermal end conditions, and the g vector is oriented at an angle gamma with the cylinder axis. Detailed velocity, temperature, and concentration field distributions are presented for different gravity levels and a range of inclination angles (gamma between 0 and 180 deg). For terrestrial conditions, complex, multicellular flow is found to occur for gamma between 0 and 180 deg. The strong convection results in significant isotherm distortions and enhanced heat transfer. As the gravity level is reduced to 0.001 g(0), the overall convection strength decays but the 3D multicellular flow persists, causing appreciable mass transfer. For a further reduction in the gravity level to 0.00001 g(0), the system thermo/solutal characteristics are close to a purely diffusive behavior. Flow and thermal and solutal distributions are presented in the principal, orthogonal, and cross sectional planes, and the average system heat and mass transfer are calculated.

Ramachandran, N.↗

NASA NTRS1995

Minority-carrier lifetime in InP as a function of light bias

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

Yater, Jane A.↗

NASA NTRS1997

Cr(+2) Diffusion Doping in ZnSe

Chromium doped zinc selenides crystals have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which has an emission range of 2-3 pm. In this study, a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 degrees Celsius. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained. The diffusivity was estimated to be about 10-* sq cm/sec using a classical diffusion model. Resistivity was derived from current-voltage measurements and in the 107-10(exp 16) Ohms-cm and increased as function of Cr concentration.

Journigan, Troy D.↗

NASA NTRS1992

Development of a hydrogen gas sensor using microfabrication technology

Microfabrication and micromachining technologies are used to produce a hydrogen gas sensor based on a palladium-silver film. The sensor uses a heater that is fabricated by diffusing p-type borones into the substrate, forming a resistance heater. A diode for temperature measurement is produced using p-type boron and n-type phosphor diffused into the substrate. A thickness of the palladium-silver film is approximately 300 arcsec. The hydrogen gas sensor employs the proven palladium-silver diode structure and is surrounded by a phosphor doped resistance heater which can be heated up to a temperature of 250 C. Experimental results show that the sensor is capable of operating over a wide range of hydrogen concentration levels between 0-95 percent without any hysteresis effects.

Liu, Chung-Chiun↗

NASA NTRS1993

Oxygen Tracer Diffusion in LA(z-x) SR(X) CUO(4-y) Single Crystals

The tracer diffusion of O-18 in La(2-x)Sr(x)CuO(4-y) single crystals (x = 0 to 0.12) has been measured from 400 to 700 C in 1 atm of oxygen using SIMS analysis. Evidence for diffusion by a vacancy mechanism was found at low strontium contents. Oxygen diffusivities for x greater than or = 0.07 were depressed by several orders of magnitude below the diffusivity for undoped La2CuO(4+/-y). The observed effects of strontium doping on oxygen diffusivity are discussed in terms of defect chemical models. The decreasing oxygen diffusivity with increasing strontium was attributed to the ordering of oxygen vacancies at large defect concentrations. A diffusion anisotropy D(sub ab)/D(sub c) of nearly 600 was also found at 500 C.

OXYGEN DIFFUSIVITY↗

NASA NTRS1990

Catalysts for ultrahigh current density oxygen cathodes for space fuel cell applications

The objective of this research was to identify promising electrocatalyst/support systems for the oxygen cathode in alkaline fuel cells operating at relatively high temperatures, O2 pressures and current densities. A number of materials were prepared, including Pb-Ru and Pb-Ir pyrochlores, RuO2 and Pt-doped RuO2, and lithiated NiO. Several of these were prepared using techniques that had not been previously used to prepare them. Particularly interesting is the use of the alkaline solution technique to prepare the Pt-doped Pb-Ru pyrochlore in high area form. Well-crystallized Pb(2)Ru(2)O(7-y) was used to fabricate high performance O2 cathodes with relatively good stability in room temperature KOH. This material was also found to be stable over a useful potential range at approximately 140 C in concentrated KOH. Other pyrochlores were found to be either unstable (amorphous samples) or the fabrication of the gas-fed electrodes could not be fully optimized during this project period. Future work may be directed at this problem. High area platinum supported on conductive metal oxide supports produced mixed results: small improvements in O2 reduction performance for Pb(2)Ru(2)O(7-y) but a large improvement for Li-doped NiO at room temperature. Nearly reversible behavior was observed for the O2/OH couple for Li-doped NiO at approximately 200 C.

Tryk, D.↗

NASA NTRS1972

A study of the properties of beryllium doped silicon with particular emphasis on diffusion mechanisms: Profiles of depth dependent conductivity as determined by electrical surface probes

Very large diffusion coefficients were encountered and required the determination of impurity profiles for samples approximately 1 cm thick. Since conductivity values are readily converted into concentrations of electrically active impurities, the major problem became that of accurately determining the conductivity profiles of beryllium diffused silicon samples. Four-point probe measurements on samples having depth conductivities are interpreted in terms of conductivity profiles, based on an exact solution of the problem of exponentially depth dependent conductivity. Applications include surface conductivity determination where the form of the conductivity profile is known, and conductivity profile determination from probe measurements taken as the sample surface is progressively lapped away. The application is limited to samples having conductivity monotonically decreasing with depth from the probed surface.

Franks, R. K.↗

NASA NTRS2000

Float-Zone Growth of Gel-xSix (x ? 10 at .%) Single Crystals: Influence of Thermocapillary and Solutocapillary Convection

Gel-xSix (x ? 10 at.%) single crystals have been grown with the float-zone technique applied within a monoellipsoid mirror furnace. The feed crystal consisted of synthesized GeO.95siO.05 polycrystalline material. Two Boron-doped (much much more than 1-2 (raised dot) 1017 at/cm3) crystals were grown under identical conditions using <100> Ge seeds. One Ge:Ga-doped (much much more than 1018 at/cm3) reference crystal was also grown in the same furnace. Compositional profiles were measured with an energy dispersive analysis by X-ray (EDAX). The maximum silicon concentration attained was 10 at.%. Micrographs of the etched crystals show sharp changes in interface curvature at the crystal edges. These are considered to be caused by solutal Marangoni convection, whose strength is assumed to be a direct function of silicon concentration, Theoretical considerations show that the flow direction, velocity, and strength varies significantly from a solutal Marangoni convection regime directly in front of the solid-liquid interface to a thermal Marangoni convection regime within the bulk melt.

Campbell, Tom A.↗

NASA NTRS1992

Use of microgravity to improve the efficiency and power output of Nd-doped laser glasses

The objectives of this research are to: (1) obtain further evidence and understand the science for the reported improvement in chemical homogeneity in glasses prepared in microgravity; and (2) study the feasibility of improving the optical and fluorescence properties, particularly, the limit for Nd(+3) concentration quenching and threshold energy for laser action for laser glasses prepared in microgravity. Attention was directed to ground based investigation whose primary purpose was to determine the suitability and conditions for processing these laser glasses in space. This report describes that the scientific and technical information required for planning flight experiments for these glasses have been obtained, and the preparation for handling and analyzing post flight samples have also been taken. Instruments required for measuring the fluorescence properties of interest have been constructed. The optical and fluorescence properties for the glasses have been measured and made available for comparative property analysis.

Ray, Chandra S.↗

NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long-wavelength infrared detectors

The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.

Lin, T. L.↗

NASA NTRS1993

Ferric sulfate montmorillonites as Mars soil analogs

Spectroscopic analyses have shown that Fe(3+)-doped smectites prepared in the laboratory exhibit important similarities to the soils on Mars. Ferrihydrite in these smectites has features in the visible to near-infrared region that resemble the energies and band-strengths of features in reflectance spectra observed for several bright regions on Mars. Ferric - sulfate - montmorillonite samples have been prepared more recently because they are a good compositional match with the surface material on Mars as measured by Viking. Reflectance spectra of montmorillonite doped with ferric sulfate in the interlayer regions include a strong 3 micron band that persists under dry conditions. This is in contrast to spectra of similarly prepared ferric-doped montmorillonites, which exhibit a relatively weaker 3 micron band under comparable dry environmental conditions. Presented here are reflectance spectra of a suite of ferric-sulfate exchanged montmorillonites prepared with variable ferric sulfate concentrations and variable pH conditions.

Bishop, J. L.↗

NASA NTRS1989

Predicted performance of InP solar cells in Cassegrainian and slats space concentrator arrays at 20 to 100 AM0, 80 to 100 C

Researchers have calculated the expected performance dependence of near-optimally designed shallow homojunction n+pp+InP solar cells on incident intensities up 200 AM0 and temperatures up to 100 C (373K). Both circular and rectangular cells have been considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80 to 100 C and the latter for use in a Slats type concentrator array at 20 AM0 80 to 100 C. Calculation of the temperature dependence of the performance parameters I sub sc, V sub oc, FF and eta was done by first verifying that the use of the measured temperature variation of I sub sc, of the best published value of the temperature dependence of the bandgap of InP, and of the temperature dependences of the lifetimes and mobilities of electrons and holes the same as in equivalently doped GaAs, gave calculated results that closely matched measured data on the temperature variation of I sub sc, V sub oc, and FF of four existing InP cells at 1 AM0. It was then assumed that the same temperature dependences of I sub sc, the bandgap and lifetimes and mobilities would hold in the near-optimally designed cells at the higher concentrations.

Goradia, Chandra↗

NASA NTRS2014

Investigation of Structure and Transport in Li-Doped Ionic Liquid Electrolytes: [pyr14][TFSI], [pyr13][FSI], [EMIM][BF4]

Ionic liquid electrolytes have been proposed as a means of improving the safety and cycling behavior of advanced lithium batteries; however, the properties of these electrolytes under high lithium doping are poorly understood. Here, we employ both polarizable molecular dynamics simulation and experiment to investigate the structure, thermodynamics and transport of three potential electrolytes, N-methyl-N-butylpyrrolidinium bis(trifluoromethylsufonyl)imide ([pyr14][TFSI]), N- methyl-N-propylpyrrolidinium bis(fluorosufonyl)imide ([pyr13][FSI]), and 1-ethyl-3-- methylimidazolium boron tetrafluoride ([EMIM][BF4]), as a function of Li (-) salt concentration and temperature. Structurally, Li(+) is shown to be solvated by three anion neighbors in [pyr14][TFSI] and four anion neighbors in both [pyr13][FSI] and [EMIM][BF4], and at all levels of xLi we find the presence of lithium aggregates. Furthermore, the computed density, diffusion, viscosity, and ionic conductivity show excellent agreement with experimental data. While the diffusion and viscosity exhibit a systematic decrease and increase, respectively, with increasing xLi, the contribution of Li(+) to ionic conductivity increases until reaching a saturation doping level of xLi 0.10. Comparatively, the Li(+) conductivity of [pyr14][TFSI] is an order of magnitude lower than that of the other liquids, which range between 0.1-0.3 mScm. The differences in Li(+) transport are reflected in the residence times of Li(+) with the anions, which are revealed to be much larger for [pyr14][TFSI] (up to 100 ns at the highest doping levels) than in either [EMIM][BF4] or [pyr13][FSI]. Finally, we comment on the relative kinetics of Li(+) transport in each liquid and we present strong evidence for transport through anion exchange (hopping) as opposed to the net motion of Li(+) with its solvation shell (vehicular).

ionic liquids↗

NASA NTRS2014

Investigation of Structure and Transport in Li-Doped Ionic Liquid Electrolytes: [pyr14][TFSI], [pyr13][FSI], [EMIM][BF4]

molecular dynamics↗

NASA NTRS1976

Characterization of iron-doped lithium niobate for holographic storage applications

A comprehensive characterization of chemical and holographic properties of eight systematically chosen Fe:LiNbO3 crystals is performed in order to determine optimum performance of the crystals in holographic storage and display applications. The discussion covers determination of Fe(2+) and Fe(3+) ion concentrations in Fe:LiNbO3 system from optical absorption and EPR measurements; establishment of the relation between the photorefractive sensitivity of Fe(2+) and Fe(3+) concentrations; study of the spectral dependence, the effect of oxygen annealing, and of other impurities on the photorefractive sensitivity; analysis of the diffraction efficiency curves for different crystals and corresponding sensitivities with the dynamic theory of hologram formation; and determination of the bulk photovoltaic fields as a function of Fe(2+) concentrations. In addition to the absolute Fe(2+) concentration, the relative concentrations of Fe(2+) and Fe(3+) ions are also important in determining the photorefractive sensitivity. There exists an optimal set of crystal characteristics for which the photorefractive sensitivity is most favorable.

Shah, R. R.↗

NASA NTRS1978

Properties of GaN grown on sapphire substrates

Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.

Crouch, R. K.↗

NASA NTRS2002

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗