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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

TID, SEE and radiation induced failures in advanced flash memories

We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.

Scheick, Leif Z.↗
NASA NTRS2008

Guideline for ground radiation testing of microprocessors in the space radiation environment

The goal of this work is to develop a guideline that is applicable to processors that are potentially useful in space. Thus, the guideline does not consider very high performance processors that are intended for server or high-performance applications where very large amounts of power are tolerated to gain performance because it would be impractical to use such high-power devices in typical space applications. This guide is intended to support insertion of these microprocessors into spaceflight applications and to recommend ground test protocols. The first guideline principle that should be followed is a serious concurrent engineering approach for down selecting space-qualified microprocessors. This requires that the design engineer seek the support of a radiation effects expert who understands total ionizing dose (TID) and single-event effects (SEEs) issues for microprocessors as applied to the system in question.

Irom, Farokh↗
NASA NTRS2011

Estimates of SEU rates from heavy ions in devices exhibiting dual-node susceptibility

A single-event effect (SEE) occurs when a single ionizing particle passing through an electronic device produces a detectable event in the device. The type of SEE most frequently discussed in the literature is a "single-node upset" problem in which an upset at a given node depends only on conditions seen by that node. In contrast, some devices are designed so that an upset becomes a "dual-node" problem in which a device upset depends on conditions simultaneously seen by two nodes. This report derives a method for estimating heavy-ion induced upset rates for the dual-node problem.

Edmonds, Larry D.↗
NASA NTRS2009

Radiation tests of highly scaled high density commercial nonvolatile NAND flash memories update 2009

Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.

Nguyen, Duc N.↗
NASA NTRS2012

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.↗
NASA NTRS2002

SEE and TID of emerging non-volatile memories

We report on the SEE and TID tests of higher density flash memories. Stand-by currents and full functional tests were used to characterize the response of radiation effects.

single-event upset non-volatile memories↗
NASA NTRS2008

Current Leakage Evolution in Partially Gate Raptured Power MOSFETs

It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.

metal oxide semiconductor field-effect transistors↗
NASA NTRS2012

Initial SEE Testing of Maestro

We have reported on initial SEE sensitivity of the full 49-core Maestro device. Supporting the low-level structures and qualitative system observation goals of phase 1 of testing. Observed sensitivities found to be consistent with Boeing predictions. Highlighted by the L1 data cache sensitivity which drives the rates on the current Maestro device. Presented details to the hardware and software setups that show where the limitations - highlighting future work. Key future work includes testing with memory and IO ports.

cache sensitivity↗
NASA NTRS2013

JPL Radiation Effects Facilities

Radiation Effects Group investigates the effects of space radiation on present and future microelectronic and optoelectronic technologies, evaluate the risk of using them in specific space missions, and recommend component and design techniques for JPL and NASA programs to reduce reliability risk from space radiation.

radiation test planning↗
NASA NTRS2015

Standards for Radiation Effects Testing: Ensuring Scientific Rigor in the Face of Budget Realities and Modern Device Challenges

An overview is presented of the space radiation environment and its effects on electrical, electronic, and electromechanical parts. Relevant test standards and guidelines are listed. Test standards and guidelines are necessary to ensure best practices, minimize and bound systematic and random errors, and to ensure comparable results from different testers and vendors. Test standards are by their nature static but exist in a dynamic environment of advancing technology and radiation effects research. New technologies, failure mechanisms, and advancement in our understanding of known failure mechanisms drive the revision or development of test standards. Changes to standards must be weighed against their impact on cost and existing part qualifications. There must be consensus on new best practices. The complexity of some new technologies exceeds the scope of existing test standards and may require development of a guideline specific to the technology. Examples are given to illuminate the value and limitations of key radiation test standards as well as the challenges in keeping these standards up to date.

Test Standard↗
NASA NTRS2016

Recent Advances and Future Challenges in Risk-Based Radiation Engineering

We cover a top-level introduction to hardness assurance (HA) from a robotic space system perspective, starting at the piece-part level. We discuss error sources inherent to presently-accepted HA practices and why they cause us to be risk-averse. We conclude by reviewing current proposals that move towards more risk-tolerant system design approaches as well as future challenges that will require these advanced techniques.

radiation effects↗