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Results for “GALLIUM ARSENIDES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Nephelometer evaluation for measurement of cloud parameters in earth and planetary atmospheres

Initial work was concerned with determining whether the radiation emitted from a laser source could be sufficiently collimated to provide a suitable source for a nephelometer-type instrument. It was necessary to develop a standard scatterer that could be used to evaluate the performance of a nephelometer. The possible use of a gallium arsenide diode as a radiation source also was investigated. The first of these utilized a single lens to focus the light scattered from a target onto a ring detector. The second configuration used reflecting and refracting axicons as optical-system elements. The work performed in each of these areas is described.

Ballard, G. S.↗
NASA NTRS1969

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

Groves, W. O.↗
NASA NTRS1979

Satellite Power Systems (SPS) concept definition study, exhibit C. Volume 6: In-depth element investigation

Computer assisted design of a gallium arsenide solid state dc-to-RF converter with supportive fabrication data was investigated. Specific tasks performed include: computer program checkout; amplifier comparisons; computer design analysis of GaSa solar cells; and GaAs diode evaluation. Results obtained in the design and evaluation of transistors for the microwave space power system are presented.

Hanley, G.↗
NASA NTRS1978

Recent developments in low cost silicon solar cells for terrestrial applications

A variety of techniques may be used for photovoltaic energy systems. Concentrated or not concentrated sunlight may be employed, and a number of materials can be used, including silicon, gallium arsenide, cadmium sulfide, and cadmium telluride. Most of the experience, however, has been obtained with silicon cells employed without sunlight concentration. An industrial base exists at present for producing solar cells at a price in the range from $15 to $30 per peak watt. A major federal program has the objective to reduce the price of power provided by silicon solar systems to approximately $1 per peak watt in the early 1980's and $0.50 per watt by 1986. The approaches considered for achieving this objective are discussed.

Leipold, M. H.↗
NASA NTRS1979

Photovoltaics and solar thermal conversion to electricity - Status and prospects

Photovoltaic power system technology development includes flat-plate silicon solar arrays and concentrating solar cell systems, which use silicon and other cell materials such as gallium arsenide. System designs and applications include small remote power systems ranging in size from tens of watts to tens of kilowatts, intermediate load-center applications ranging in size from tens to hundreds of kilowatts, and large central plant installations, as well as grid-connected rooftop applications. The thermal conversion program is concerned with large central power systems and small power applications.

Alper, M. E.↗
NASA NTRS1978

Electron and proton degradation in /AlGa/As-GaAs solar cells

Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.

Loo, R.↗
NASA NTRS1980

Study of multi-kW solar arrays for Earth orbit application

Low cost low Earth orbit (LOW) and geosynchronous Earth orbit (GEO) Solar Array concepts in the 300 to 1000 kW range which could be reduced to hardware in the mid 1980's, are identified. Size scaling factors and longer life demands are recognized as the prime drivers for the designs if low life cycle costs for energy are to be achieved. Technology is identified which requires further development in order to assure component readiness and availability. Use of the low concentration ratio (CR) concentrator, which uses gallium arsenide solar cells for both LEO and GEO applications, is recommended.

Source record↗
NASA NTRS1979

Study of multi-kW solar arrays for Earth orbit applications: Midterm performance review

Planar and concentrator solar array concepts capable of providing 300 kW to 1000 kW in low Earth orbit applications in the 1987 time period at an array recurring cost less than or equal to thirty dollars per watt are examined. Silicon and gallium arsenide solar cell applicability are evaluated. On-orbit maintenance by space shuttle is also investigated. Design configurations for the solar arrays and solar cells are recommended.

Source record↗
NASA NTRS1980

Conceptual design study of concentrator enhanced solar arrays for space applications. 2kW Si and GaAs systems at 1 AU

The effect of concentration level on the specific power for a deployable, thin, gallium arsenide cell array in geosynchronous orbit for 10 years in conjunction with a two dimensional flat plate trough concentrator (V trough) and also with a multiple flat plate concentrator was investigated as well as the effects for a conventional silicon cell array on a rigid substrate. For application to a thin GaAs array at 1 AU for 10 years, the V trough produces a 19% benefit in specific power and a dramatic reduction in array area, while the multiple flat plate collector design is not only of no benefit, but is a considerable detriment. The benefit it achieves by reducing array area is duplicated by the 2D design. For the silicon array on a rigid substrate, improvement in performance due to a concentrator with ordinary mirror coating is quite small: 9% increase in specific power, and 13% reduction in array area. When the concentrator mirrors are coated with an improved cold mirror coating, somewhat more significant results are obtained: 31% specific power improvement; and 27% area reduction. In both cases, a 10 year exposure reduces BOL output by 23%.

Source record↗
NASA NTRS1980

Satellite power systems (SPS) concept definition study. Volume 1: Executive summary

System definition studies resulted in a further definition of the reference system using gallium arsenide solar arrays, analysis of alternative subsystem options for the reference concept, preliminary solid state microwave concept studies, and an environmental analysis of laser transmission systems. The special emphasis studies concentrated on satellite construction, satellite construction base definition, satellite construction base construction, and rectenna construction. Major emphasis in the transportation studies was put on definition of a two stage parallel burn, vertical takeoff/horizontal landing concept. The electric orbit transfer vehicle was defined in greater detail. Program definition included cost analyses and schedule definition.

Hanley, G. M.↗
NASA NTRS1980

Epitaxial growth of single crystal films

An experiment in gallium arsenide liquid phase epitaxy was performed successfully on the SPAR 6 flight October 17, 1979. The design, fabrication, and testing of the experimental apparatus, and the performance and results of the experiment are discussed.

Lind, M. D.↗
NASA NTRS1980

Heat-rejection design for large concentrating solar arrays

This paper considers the effect of heat rejection devices (radiators) on the performance and cost of large concentrating solar arrays for space application. Overall array characteristics are derived from the weight, cost, and performance of four major components; namely primary structure, optics/secondary structure, radiator, and solar panel. An ideal concentrator analysis is used to establish general cost and performance trends independent of specific array design. Both passive and heat-pipe radiation are evaluated, with an incremental cost-of-power approach used in the evaluation. Passive radiators are found to be more cost effective with silicon than with gallium arsenide (GaAs) arrays. Representative concentrating arrays have been evaluated for both near-term and advanced solar cell technology. Minimum cost of power is achieved at geometric concentration ratios in the range 2 to 6.

French, E. P.↗
NASA NTRS1982

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗
NASA NTRS1980

SPS Energy Conversion Power Management Workshop

Energy technology concerning photovoltaic conversion, solar thermal conversion systems, and electrical power distribution processing is discussed. The manufacturing processes involving solar cells and solar array production are summarized. Resource issues concerning gallium arsenides and silicon alternatives are reported. Collector structures for solar construction are described and estimates in their service life, failure rates, and capabilities are presented. Theories of advanced thermal power cycles are summarized. Power distribution system configurations and processing components are presented.

Source record↗
NASA NTRS1980

Radiation Damage Workshop report

The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium arsenide solar cells are addressed with reference to radiation damage. In general, it is concluded that diagnostic sensitivities and material purities are basic to making significant gains in end-of-life performance and thermal annealability. Further, GaAs material characterization is so sketchy that a well defined program to evaluate such material for solar cell application is needed to maximize GaAs cell technology benefits.

Rahilly, W. P.↗
NASA NTRS1981

Satellite Power Study (SPS) concept definition study (Exhibit D). Volume 1: Executive summary

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

Hanley, G. M.↗