Resonance and wave phenomena in semiconductors
Excitation of instabilities and microwave emission from high purity n-type indium antimonide
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Excitation of instabilities and microwave emission from high purity n-type indium antimonide
We have developed and demonstrated miniature 180 GHz Monolithic Microwave Integrated Circuit (MMIC) radiometer modules that have low noise temperature, low mass and low power consumption. These modules will enable the Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) of the Precipitation and All-weather Temperature and Humidity (PATH) Mission for atmospheric temperature and humidity profiling. The GeoSTAR instrument has an array of hundreds of receivers. Technology that was developed included Indium Phosphide (InP) MMIC Low Noise Amplifiers (LNAs) and second harmonic MMIC mixers and I-Q mixers, surface mount Multi-Chip Module (MCM) packages at 180 GHz, and interferometric array at 180 GHz. A complete MMIC chip set for the 180 GHz receiver modules (LNAs and I-Q Second harmonic mixer) was developed. The MMIC LNAs had more than 50% lower noise temperature (NT=300K) than previous state-of-art and MMIC I-Q mixers demonstrated low LO power (3 dBm). Two lots of MMIC wafers were processed with very high DC transconductance of up to 2800 mS/mm for the 35 nm gate length devices. Based on these MMICs a 180 GHz Multichip Module was developed that had a factor of 100 lower mass/volume (16x18x4.5 mm3, 3g) than previous generation 180 GHz receivers.
In this article, a 220-GHz direct detection polarimetric receiver is reported. This polarimetric receiver is intended for sensing of the microphysical properties of cloud ice in the earth's upper atmosphere. In the article, we report the measured RF performance, including RF gain of approximately 35 dB per channel and integrated noise figure of the receiver. The noise figure is measured to be 5.1 dB for the horizontally polarized channel and 5.4 dB for the vertically polarized channel. The receiver measures only 1.8 cm × 3.0 cm × 6.4 cm and has a total regulated dc power consumption of 520 mW. This article represents the first 220-GHz polarimetric direct detection receiver and is enabled by an advanced 25-nm indium phosphide (InP) HEMT monolithic microwave integrated circuit (MMIC) technology.
Reduction of thermal resistance between a power transistor case and a heat sink in space, through insertion of indium foils
Abundances of sodium, scandium, chromium, iron, manganese, cobalt, copper, indium, and uranium in chondrules, chondrites, and meteorites determined by neutron activation analysis
Thermoelectric power and electric conductivity of semiconductor compounds containing copper, cadmium, indium, and tellurium
Preparation of vapor deposited cadmium sulfide thin films on indium antimonide semiconductors for acoustic propagation studies of electron- phonon interaction
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony alloy semiconductor materials
Vapor phase epitaxial production of indium arsenic phosphide crystalline layers, discussing electron mobilities, electrical resistivities and doping
Gold-nickel brazing alloy, with 5 percent indium added to depress the melting point, is used for brazing of nickel-clad silver electrical conductors which operate at temperatures to 1200 deg F. Alloy has low resistivity, requires no flux, and is less corrosive than other gold-nickel, gold-copper alloys.
Magnetoresistance devices and flash evaporation equipment design for indium antimonide research
Vacuum deposition of indium antimonide semiconductor materials
Inelastic proton scattering from indium 115
Optimization for zero gravity experiment on solution growth of gallium arsenide and design of experiment package for melt growth of indium antimonide crystals
Flexible barrier membrane comprising porous substrate and incorporating liquid gallium or indium metal used as sealant barriers for spacecraft walls and pumping liquid propellants
Single crystal indium gallium phosphide p-n junction preparation by epitaxial vapor phase growth technique, determining energy gap dependence on alloy composition
Eight high intensity portable fluorescent lights were produced. Three prototype lights were also produced, two of which were subsequently updated to the physical and operational configuration of the qualification and flight units. Positioning of lamp apertures and reflectors in these lights is such that the light is concentrated and intensified in a specific pattern rather than widely diffused. Indium amalgam control of mercury vapor pressure in the lamp gives high output at lamp ambient temperatures up to 105 C. A small amount of amalgam applied to each electrode stem helps to obtain fast warm-up. Shrinking a Teflon sleeve on the tube and potting metal caps on each end of the lamp minimizes dispersion of mercury vapor and glass particles in the event of accidental lamp breakage. Operation at 20 kHz allows the lamps to consume more power than at low frequency, thus increasing their light output and raising their efficiency. When used to expose color photographic film, light from the lamps produces results approximately equal to sunlight.
Description of a high-purity n-type indium antimonide sample mounted in a reentrant cavity, cooled to 4.2 K, and operated as a millimeter-wave detector. The scheme utilizes a down-conversion process, and free-carrier absorption is the mechanism responsible for the detection process. Power applied at the millimeter-wave frequency causes a change in the material conductivity, which in turn causes a change in the X-band power absorption. Cavity perturbation techniques are used to analyze the scheme. The detector was operated successfully at frequencies between 35 and 150 GHz with no long-wavelength or short-wavelength cutoff observed. The scheme offers a fast, highly sensitive, and rugged detector with low conversion loss.