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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Interconnection of Semiconductor Devices in Extreme Environment Microelectronic Integrated Circuit Chips

A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).

Spry, David J.↗
NASA NTRS2004

Pb-free microelectronics assembly in aerospace applications

In this paper we provide a snapshot of the commericial industry trends and how they may impact electronics in the aerospace environment. Impacts will be felt in the areas of: reliability, assembly methods, cost drivers, supply chain selection and alternate materials selection.

Schoenung, Julie M.↗
NASA NTRS2008

Vacuum microelectronics and miniature instruments based on application specific electrode-integrated nanotube cathodes (ASINCs)

JPL has developed high performance cold cathodes using arrays of carbon nanotube bundles thay routinely produce > 15 A/cm2 at 5 to 8 V/μm applied fields for extreme environment vacuum electronics and miniature instrumentation. These cathodes have been monolithically integrated with additional electrodes using double siliconon-insulator process.

Mojarradi, M.M.↗
DOE OSTI2025

SBIR Phase I Final Technical Report LOW-COST, LIGHTWEIGHT DOPED POLYMER COATINGS FOR MICROELECTRONICS VIA 3D PRINTING Award Number DE-SC0025167 Prepared for U.S. Department of Energy, Office of Science, SC-1 For the Period July 22, 2024 – April 21, 2025 Report Date May 5, 2025 Submitted by Jun Wang, Ph.D., Principal Investigator Report Contributors Dr. Jun Wang, Dr. Charles Sosa

Explore the source record for details and available documents.

Wang, Jun [Radiation Monitoring Devices, Inc., Wat↗
NASA NTRS2010

Scaled CMOS Technology Reliability Users Guide

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.

Microelectronics Reliability↗
NASA NTRS1977

Oscillator devices using thick-film technology

The Electrical Engineering Department of North Carolina Agricultural and Technical State University has developed a microelectronics laboratory as a result of research involving microelectronics and metallic-oxide studies over the past five years. Work on characterization and applications of metallic-oxide devices is currently being conducted. This paper reports on the fabrication of eight oscillator devices on a 1-in. square alumina substrate using metallic-oxide materials developed as a result of the research program. Significant technological capabilities of the laboratory relative to the microelectronics industry in the area of microelectronic-component evaluation are also discussed.

Williams, L., Jr.↗
NASA NTRS2009

Using FLUKA to Calculate Spacecraft: Single Event Environments: A Practical Approach

The FLUKA nuclear transport and reaction code can be developed into a practical tool for calculation of spacecraft and planetary surface asset SEE and TID environments. Nuclear reactions and secondary particle shower effects can be estimated with acceptable accuracy both in-flight and in test. More detailed electronic device and/or spacecraft geometries than are reported here are possible using standard FLUKA geometry utilities. Spacecraft structure and shielding mass. Effects of high Z elements in microelectronic structure as reported previously. Median shielding mass in a generic slab or concentric sphere target geometry are at least approximately applicable to more complex spacecraft shapes. Need the spacecraft shielding mass distribution function applicable to the microelectronic system of interest. SEE environment effects can be calculated for a wide range of spacecraft and microelectronic materials with complete nuclear physics. Evaluate benefits of low Z shielding mass can be evaluated relative to aluminum. Evaluate effects of high Z elements as constituents of microelectronic devices. The principal limitation on the accuracy of the FLUKA based method reported here are found in the limited accuracy and incomplete character of affordable heavy ion test data. To support accurate rate estimates with any calculation method, the aspect ratio of the sensitive volume(s) and the dependence must be better characterized.

Koontz, Steve↗