Total Dose Modeling of the Transit Through the Van Allen Belts
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A total dose analysis for exposure of electronic parts at the box level is presented for the Hubble Space Telescope. This was done using solid angle sectoring/3-dimensional ray trace and Monte Carlo radiation transport simulations. Results are discussed in terms of parts that are potential total dose concerns.
We present reliability data combined with total dose gamma radiation for one of the first commercially available resistive memory devices. These Tantalum Oxide (TaOX)-based resistive memory chips demonstrate operation in dynamic program and erase testing up to ~130 Krad(Si) of 60Co gamma dose. In static and unbiased conditions, the stored data in the memory cells were able to withstand up to 50Mrad(Si) of exposure. The access circuitry, though, seemed less robust to gamma radiation and was able to operate only up to a total dose of 3Mrad(Si). Post exposure reliability as indicated by endurance, cycling error rate, and data retention tests showed no detectable impact from the combination with prior gamma irradiation. Overall, the total dose radiation tolerance of the commercial TaOx-based resistive memory chip appears to be higher than flash memory chips and in agreement with prior tests conducted with single cell resistive memories.
Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the design margin concept with one of failure probability.
The opportunity to compare cosmic radiation effects caused during long and short duration exposure flights in biological objects are limited until now, and data obtained so far are very rare and insufficient. Because of the very long exposure of the experiment during the Long Duration Exposure Facility (LDEF) mission (approximately 2000 days) structural changes of the hardware material can be expected which will influence its biocompatibility and, thus, will interact with the radiobiological effects. The aim of the experiment flown on LDEF was a detailed investigation of biological effects caused by cosmic radiation especially of particles of high atomic number Z and high energy. The flight hardware consisted of standard BIOSTACK containers; in these containers a special sandwich construction consisted of visual plastic detectors with seed rsp. spore layers interlocked.
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This paper documents recent TID (including ELDRS) and proton damage test results obtained by JPL. Unusual test results, such as abnormally low or high failure levels or unusual failure or response mechanisms, are emphasized.
Hardware design environments for NASA's Constellation Program-the Vision for Space Exploration program to design and build new vehicles for servicing low Earth orbit and the Moon and beyond-have been developed that are necessarily conservative in nature to assure robust hardware design and development required to build space systems which will meet operational goals in a wide range of space environments, This presentation will describe the rationale used to establish the space radiation and plasma design environments specified for a variety of applications including total ionizing radiation dose, dose rate effects, and spacecraft charging and will compare the design environments with "space weather" variability to evaluate the applicability of the design environments and potential vulnerabilities of the system to extreme space weather events.
Spectral models of solar particle events and trapped radiation belts are necessary for the design requirements of total ionizing radiation dose, single event effects, and spacecraft charging. Space radiation and plasma environment specifications for hardware design are necessarily conservative to assure system robustness for a wide range of space environments.
We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.
Radiation Effects Group investigates the effects of space radiation on present and future microelectronic and optoelectronic technologies, evaluate the risk of using them in specific space missions, and recommend component and design techniques for JPL and NASA programs to reduce reliability risk from space radiation.
Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.
An overview is presented of the space radiation environment and its effects on electrical, electronic, and electromechanical parts. Relevant test standards and guidelines are listed. Test standards and guidelines are necessary to ensure best practices, minimize and bound systematic and random errors, and to ensure comparable results from different testers and vendors. Test standards are by their nature static but exist in a dynamic environment of advancing technology and radiation effects research. New technologies, failure mechanisms, and advancement in our understanding of known failure mechanisms drive the revision or development of test standards. Changes to standards must be weighed against their impact on cost and existing part qualifications. There must be consensus on new best practices. The complexity of some new technologies exceeds the scope of existing test standards and may require development of a guideline specific to the technology. Examples are given to illuminate the value and limitations of key radiation test standards as well as the challenges in keeping these standards up to date.
Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.
This presentation outlines a brief description of the Living With a Star (LWS) Program missions and detailed information about the Space Environment Testbed (SET) payload consisting of a space weather monitor and carrier containing 4 board experiments.
We cover a top-level introduction to hardness assurance (HA) from a robotic space system perspective, starting at the piece-part level. We discuss error sources inherent to presently-accepted HA practices and why they cause us to be risk-averse. We conclude by reviewing current proposals that move towards more risk-tolerant system design approaches as well as future challenges that will require these advanced techniques.
The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. This presentation will provide an overview of some of the key proposed updates to the document.
Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.