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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.

Engineering - Electronic and electrical engineerin↗
DOE OSTI2022

Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach

The development of metal oxide semiconductor field effect transistors (MOSFETs) utilizing epitaxially grown 4H-SiC has accelerated in recent years due to their favorable properties, including a high breakdown field, high saturated electron drift velocity, and good thermal conductivity. However, extended defects in epitaxial 4H-SiC can affect both device yields and operational lifetime. In this work, we demonstrate the importance of a multiscale luminescence characterization approach to studying nondestructively extended defects in epitaxial 4H-SiC semiconducting materials. Multiscale luminescence analysis reveals different aspects of excess charge carrier recombination behavior based on the scale of a particular measurement. Combining measurements of the same extended defect area at different scales tells us more about the essential nature of that defect and its microstructure. Here, we use photoluminescence imaging and cathodoluminescence spectrum imaging to investigate the recombination behavior of several different types of extended defects, including stacking faults, inclusions, and basal plane dislocations. A detailed understanding of the optoelectronic properties of extended defects in epitaxial SiC helps elucidate the microstructure of extended defects and can provide pathways to mitigate detrimental changes during device operation related to their evolution, such as the recombination enhanced dislocation glide effect that affects SiC-based MOSFETs.

3C-inclusion↗
DOE OSTI2023

Josephson Traveling Wave Parametric Amplifiers to Enable Future Neutrino Mass Measurements

Technologies for “quantum sensing" have the promise of dramatically improved sensitivity in some experiments that explore nuclear physics at the boundaries of our current knowledge. In particular, the Josephson Traveling Wave Parametric Amplifier (JTWPA) could enable future experiments such as Project 8 that use Cyclotron Radiation Emission Spectroscopy (CRES) to measure the absolute neutrino mass scale in tritium beta decays. CRES consists of detecting a signal of approximately one femtowatt of power radiated by electrons trapped in a 1-T magnetic field. The frequency of that radiation, around 27 GHz for a tritium endpoint electron, is inversely proportional to the electron energy. One of the significant challenges of a CRES experiment is the detection of minimal signal power levels. State-of-the-art transistor-based technologies will not likely achieve sufficient signal-to-noise ratio (SNR) in a competitive neutrino mass experiment. However, emerging quantum technologies have been demonstrated to operate at the fundamental lower limits of noise permitted by the laws of quantum mechanics. Of those technologies, JTWPAs appear to satisfy future performance needs with speed gain, bandwidth, and very low noise. We propose to bring together a group of neutrino physicists, experts in the needs of future neutrino mass measurements, with leaders in the field of quantum information science and JTWPA technology to develop JTWPAs appropriate for neutrino mass measurements.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Coherence in Polycrystalline Thin Films of Twisted Molecular Crystals

Helicoidal crystallites in rhythmically banded spherulites manifest spectacular optical patterns in small molecules and polymers. It is shown that concentric optical bands indicating crystallographic orientations typically lose coherence (in-phase twisting) with growth from the center of nucleation. Here, coherence is shown to increase as the twist period decreases for seven molecular crystals grown from the melt. This dependence was correlated to crystallite fiber thickness and length, as well as crystallite branching frequency, a parameter that was extracted from scanning electron micrographs, and supported by numerical simulations. Hole mobilities for 2,5-didodecyl-3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP-C12) measured by using organic field-effect transistors demonstrated that more incoherent boundaries between optical bands in spherulites lead to higher charge transport for films with the same twist period. This was rationalized by combining our growth model with electrodynamic simulations. This work illustrates the emergence of complexity in crystallization processes (spherulite formation) that arises in the extra variable of helicoidal radial twisting. The details of the patterns analyzed here link the added complexity in crystal growth to the electronic and optical properties of the thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices

In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs was functional, and that among the functional CNTFETs, 30% of the CNTFETs had an IDS on/off ratio larger than 20 while 70% of the CNTFETs had an IDS on/off ratio lower than 20. The highest IDS on/off ratio was about 490. The DEP-based positioning of carbon nanotubes is simple and effective, and the DEP-based device fabrication steps are compatible with Si technology processes and could lead to the wafer-scale fabrication of CNT electronic devices.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Solid-state thermometry via ionic–electronic coupling in two-dimensional heterostructures

The coupling of ionic and electronic transport in solid-state systems offers new opportunities for realizing compact, energy-efficient sensing technologies, yet practical implementations remain limited. In this article, we introduce a two-dimensional iontronic platform based on field-effect transistors that integrate monolayer MoS 2 channels with van der Waals bimetallic thiophosphates ( AB P 2 X 6 , A = Li, Cu, Ag and so on; B = In, Sc and so on; and X = S and Se) as ionic gate dielectrics to realize on-chip thermometry. Specifically, we exploit thermally activated ion migration within the gate dielectric leading to conductance modulation in the MoS 2 channel for temperature sensing. We achieve ~1–2 °C resolution, fast electronic readout and subpicojoule energy consumption in an ultracompact footprint (~1 µm 2 ). Beyond thermometry, these results establish bimetallic thiophosphates as a versatile platform for solid-state iontronics and broaden the functional design space of van der Waals heterostructures for sensing, actuation and adaptive electronics.

42 ENGINEERING↗
DOE OSTI2022

Solution-Deposited and Patternable Conductive Polymer Thin-Film Electrodes for Microbial Bioelectronics

Microbial bioelectronic devices integrate naturally occurring or synthetically engineered electroactive microbes with microelectronics. These devices have a broad range of potential applications, but engineering the biotic–abiotic interface for biocompatibility, adhesion, electron transfer, and maximum surface area remains a challenge. Prior approaches to interface modification lack simple processability, the ability to pattern the materials, and/or a significant enhancement in currents. We report a novel conductive polymer coating that significantly enhances current densities relative to unmodified electrodes in microbial bioelectronics is reported. The coating is based on a blend of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) crosslinked with poly(2-hydroxyethylacrylate) (PHEA) along with a thin polydopamine (PDA) layer for adhesion to an underlying indium tin oxide (ITO) electrode. When used as an interface layer with the current-producing bacterium Shewanella oneidensis MR-1, this material produces a 178-fold increase in the current density compared to unmodified electrodes, a current gain that is higher than previously reported thin-film 2D coatings and 3D conductive polymer coatings. The chemistry, morphology, and electronic properties of the coatings are characterized and the implementation of these coated electrodes for use in microbial fuel cells, multiplexed bioelectronic devices, and organic electrochemical transistor based microbial sensors are demonstrated. It is envisioned that this simple coating will advance the development of microbial bioelectronic devices.

patterned bioelectronics↗
DOE OSTI2021

Comparison of the Mechanical Properties of a Conjugated Polymer Deposited Using Spin Coating, Interfacial Spreading, Solution Shearing, and Spray Coating

The mechanical properties of π-conjugated (semiconducting) polymers are a key determinant of the stability and manufacturability of devices envisioned for applications in energy and healthcare. These properties—including modulus, extensibility, toughness, and strength—are influenced by the morphology of the solid film, which depends on the method of processing. To date, the majority of work done on the mechanical properties of semiconducting polymers has been performed on films deposited by spin coating, a process not amenable to the manufacturing of large-area films. Here, we compare the mechanical properties of thin films of regioregular poly(3-heptylthiophene) (P3HpT) produced by three scalable deposition processes—interfacial spreading, solution shearing, and spray coating—and spin coating (as a reference). Our results lead to four principal conclusions. (1) Spray-coated films have poor mechanical robustness due to defects and inhomogeneous thickness. (2) Sheared films show the highest modulus, strength, and toughness, likely resulting from a decrease in free volume. (3) Interfacially spread films show a lower modulus but greater fracture strain than spin-coated films. (4) The trends observed in the tensile behavior of films cast using different deposition processes held true for both P3HpT and poly(3-butylthiophene) (P3BT), an analogue with a higher glass transition temperature. Grazing incidence X-ray diffraction and ultraviolet–visible spectroscopy reveal many notable differences in the solid structures of P3HpT films generated by all four processes. Herein, while these morphological differences provide possible explanations for differences in the electronic properties (hole mobility), we find that the mechanical properties of the film are dominated by the free volume and surface topography. In field-effect transistors, spread films had mobilities more than 1 magnitude greater than any other films, likely due to a relatively high proportion of edge-on texturing and long coherence length in the crystalline domains. Overall, spread films offer the best combination of deformability and charge-transport properties.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons

Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS 2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS 2 ) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS 2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induced modifications, particularly with Raman lasers, offer a straightforward method to modulate materials via thermal processes with precise patterning control and energy-level flexibility. However, most studies on the modification of MoS 2 have focused on multilayered structures or have been conducted under low-power laser conditions, leaving the feasibility of structural modifications in monolayer MoS 2 elusive. In this study, we fundamentally elucidated the effects of high-power Raman laser irradiation on the surface of chemical vapor deposition (CVD)-grown monolayer MoS 2 under ambient conditions and uncovered the underlying mechanisms of laser-induced modifications by applying intense photon energy with highly interactive reactions. Our results revealed both etching and deposition phenomena in two discernible regions, and it can be demonstrated by intensity regimes based on the spatial distribution of laser irradiance within the laser-irradiated spot. Furthermore, phase transition was found to be inhibited due to the promoted oxidation and the deposition of hydrogenated amorphous carbon (a-C:H), and p-type doping was observed, likely occurring in the region beneath the a-C:H deposition as substitutional doping on the 2H phase of MoS 2 . To compare the thermal effects, MoS 2 modifications were further analyzed using simplified heat transfer estimations. In conclusion, these findings deepen our understanding of how Raman laser irradiation modifies MoS 2 under ambient conditions, providing guidelines for optimizing its modification processes.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications. SiC mosfet modules exhibit narrow SC withstand times and generally much lower SC robustness than silicon (Si) insulated-gate bipolar transistors (IGBTs). This puts a critical concern on their utilization, further stressing the importance of reliable protection. This article presents a comprehensive analysis and discussion on the SiC mosfet module SC protection and performance comparison between conventional desaturation detection, previously used for Si IGBT protection, and Rogowski switch-current sensor (RSCS) detection. In addition, this article presents the experimental design for soft turn-off as a reaction to the SC detection to avoid excessive overshoots during the abrupt turn-off of the SC current. To perform different types of SC with various fault inductances on different temperatures, and for the sake of fair comparison under the same conditions, a gate-driver unit for 1.2 kV SiC mosfet half-bridge modules is developed containing both detection methods. The results demonstrate that both methods are successful in protecting the module in all SC types, with superiority of the RSCS detection and concerns for desaturation detection in high-inductance and high dc-bus voltage SC events.

42 ENGINEERING↗
DOE OSTI2020

High yield production of ultrathin fibroid semiconducting nanowire of Ta 2 Pd 3 Se 8

Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta 2 Pd 3 Se 8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy (TEM) and transport measurements reveal the as-fabricated Ta 2 Pd 3 Se 8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low-frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.

1D semiconductor↗
DOE OSTI2020

Synthesis of Poly(bisisoindigo) Using a Metal-Free Aldol Polymerization for Thin-Film Transistor Applications

Typical syntheses of conjugated polymers rely heavily on organometallic reagents and metal-catalyzed cross-coupling reactions. In this paper, we show that an environmentally benign aldol polymerization can be used to synthesize poly(bisisoindigo), an analog of polyisoindigo with a ring-fused structural repeat unit. Owing to its extended conjugation length, poly(bisisoindigo) absorbs across the UV/vis/NIR spectrum, with an absorption tail that reaches 1000 nm. Due to the four electron-deficient lactam units on each repeat unit, poly(bisoindigo) possesses a low-lying LUMO, which lies at -3.94 eV relative to vacuum. Incorporation of the ring-fused monomer unit also lowered the overall torsional strain in the polymer backbone (relative to polyisoindigo), and the polymer was successfully used in prototype unipolar n-channel organic thin-film transistors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Power Module Precursors and Prognostics

This project focuses on finding and utilizing electrical properties (precursors) of power electronic devices and modules whose changes have strong correlations with different modes and levels of degradations in order to realize online and lightweight state of health evaluation and fault diagnosis. Results from this project will contribute to higher safety, reliability, and power density of power electronic components. The approaches mainly include reviewing academic literature and industry practices for state of the art precursor identification and extraction, accelerated life cycles (ALC) of various power modules to create different degradations in-house, and developing techniques for gate-driver-integratable precursor detection circuit. In FY24, the results includes two sets of definitively detected aging precursors (on-state resistance and gate threshold voltage) for two sets of power modules respectively, controlled accelerated lifetime cycling of multiple silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) modules, and the development and validation of a gate voltage detection system.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Enhancement of Conjugated Polymer Microstructure and Mixed-Conducting Properties via Chalcogenophene Heteroatom Substitution

Heteroatom substitution is a powerful tool to tune the intra- and intermolecular structure of conjugated polymers as well as their resulting optoelectronic and electrochemical properties. Here, a series of oligoethylene glycol bithiophene chalcogenophene polymers (p(g3T2-X)) with systematically varied furan, thiophene, selenophene, and tellurophene comonomers have been synthesized for mixed ionic-electronic conducting applications. Their microstructures have been thoroughly characterized ex situ and in situ with X-ray scattering, and their mixed conducting properties have been probed in electrochemical transistor testbeds. Chalcogenophene heteroatom choice was found to clearly dictate the polymer microstructure (crystallite dimensionality and orientation) and tune mixed conducting properties. Proceeding down Group 16, from O to Se systematically directed the molecular ordering of 2D polymer crystallites from face-on (O) to mixed (S) to edge-on (Se) orientations, with Te driving the polymer to form well-oriented edge-on 3D crystallites. Heteroatom dictated crystallite quality, and orientation tuned relative ionic transport by 2 orders of magnitude. Hole mobility (μ hole ) and mixed conducting figure of merit (μC*) were each tuned over an order of magnitude depending on heteroatom choice, with the Te-containing polymer reaching μ hole = 3.60 cm 2 V –1 s –1 and μC* = 483 F cm –1 V –1 s –1 , due to improved molecular ordering. Insights from this polymer series highlight target microstructures for enhanced mixed conduction in future conjugated polymers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Quantum octets in high mobility pentagonal two-dimensional PdSe 2

Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe 2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm 2 /Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Recent advancements in chiral spintronics: from molecular-level insights to device applications. A prospect based on the interplay between physical and chemical properties of chiral systems

This review discusses recent advancements in chiral-based spin-electronic devices achieved using suitable combinations of organic, inorganic and hybrid materials. The focus is on how chirality can be effectively used to control spin in practical applications, particularly in spintronic sensors and consumer devices. Interestingly, the underlying mechanism for this control is the chiral-induced spin selectivity (CISS) effect, which links the structural chirality of a material to its spin-selective electronic transport properties. The CISS effect arises from the observation that charge transmission in chiral systems is spin selective. Experimental evidence suggests a relationship between electron spin and the structural handedness of the material. In conclusion, this unique structure-transport relationship can be exploited to design a wide range of spintronics devices, including memory, transistors, logic gates and molecular q-bits.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗