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An infrared detector was fabricated to determine the feasibility of atmospheric sounding from synchronous orbit for water vapor and carbon dioxide. The device was extensively tested both before and after a 24-hour soak at 50 C and relative humidity of 95 percent. No degradation in performance as a result of the soak was observed. The device contains a single photoconductive HgCdTe element designed to operate in the six to fifteen micron region.
This paper reports the detection of the fine-structure forbidden line of O III at 88.16 microns in emission from M 17 (the Omega Nebula), which is an optically bright galactic H II region and a strong thermal radio source. The observations were made using an airborne 30-cm telescope and a liquid helium-cooled grating spectrometer with Ge:Ga photoconductive detectors. The line intensity is found to be 2.2 (+1.0, -0.7) by 10 to the -15th power W/sq cm. The results are compared with those of a search for the present line in M 42 as well as with theoretical predictions of the line intensity.
The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.
A 9 channel demonstration of 10 micrometer photoconductive mercury cadmium telluride detector array, bipolar preamplifiers, and a Si CCD multiplexer, integrated into a focal plane assembly and operating at 105 K and at 17 Hz is reported. The result of a direct coupling experiment between a 5-micrometer photovoltaic mercury cadmium telluride photodiode and a CCD is revealed. No appreciable degradation in the signal-to-noise ratio was experienced.
A liquid helium-cooled p-channel enhancement mode MOSFET, the 3N167, is found to have sufficiently low noise for use as a preamplifier with helium-cooled bolometers that are used in infrared astronomy. Its characteristics at 300, 77, and 4.2 K are presented. It is also shown to have useful application with certain photoconductive and photovoltaic infrared detectors.
Photoconductive acoustoelectric transducer (AET) functions as phase-insensitive ultrasonic transducer. Device is easy to use and requires no additional noisy components such as light or thermal source.
Multilayered mercury-cadmium telluride photoconductive detectors were developed which are capable of providing individual coverage of three separate spectral wavelength bands without the use of beam splitters. The multilayered "three-color" detector on a single dewar takes the place of three separate detector/filter/dewar units and enables simpler and more reliable mechanical and optical designs for multispectral scanners and radiometers. Wavelength channel design goals (in micrometers) were: 10.1 to 11.0, 11.0 to 12.0, and 13.0. Detectivity for all channels was 1 x 10 to the 10th power cm-Hz 1/2/Watt. A problem occurred in finding an epoxy layer which had good infrared transmission properties and which also was chemically and mechanically compatible with HgCdTe processing techniques. Data on 6 candidate bonding materials are surveyed and discussed.
Technical approaches for the advanced development of 8-12 micrometer detectors operating at elevated temperatures were defined. The theoretical limits to performance of 8-12 micrometer quantum detectors (photoconductive and photovoltaic) and thermal detectors (pyroelectrics, bolometers etc). An analytic model of signal and noise in both quantum detectors and pyroelectric detectors was developed and candidate materials for both detector types were identified and examined. The present status of both quantum and thermal detectors was assessed as well as the parameters limiting operating temperature and detectivity. The areas of research and development likely to lead to detector performance near the theoretical limit are identified.
An apparatus suitable for receiving a sample for optimetric analysis includes a sample cell comprising an opaque hollow tube. Several apertures are defined in the wall of the tubing and a lens barrel which extends beyond to opposite surfaces of the wall is supported within at least one of the apertures. A housing is provided with one channel for receiving the sample cell and a series of channels extending from the exterior housing to the sample cell apertures. A filter element is housed in each of these latter channels. These channels slidingly receive an excitation light source for a photodetector cell to permit selective focusing. A sample cell containing at least three apertures in the walls can be mounted for rotation relative to a light source or photoconduction means for simultaneous or alternative optimetric determination of the components of a single sample. The sample cell is fabricated by supporting a lens barrel within the aperture. A molten portion of glass is deposited in the lens barrel and cooled while in a horizontal position to form a lens having an acceptable angle.
Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.
Various alternative active approaches to achieving aand maintaining flatness for the microwave power transmission system (MPTS) were studied. A baseline active alignment scheme was developed which includes subarray attachment mechanisms, height and tilting adjustments, service corridors, a rotating laser beam reference system, monopulse pointing techniques, and the design of a beam-centering photoconductive sensor.
Measurements have been made of the signal and noise characteristics of extrinsic photoconductive silicon detectors. The measurements were made at several background levels, bias voltages and detector operating temperatures. Data are shown at modulation frequencies as low as 0.01 Hz, operating temperatures as low as 2.5K and background photon flux densities down to 8 x 10 to the 7th photons/sec-sq cm. Data on the temporal characteristics of the detector signal are presented. In addition, some interesting data on 'spontaneous noise spikes' are also shown.
The design and performance of the Arizona cryogenically-cooled, balloon-borne, multiband far infrared survey telescope are described. The 40 cm Cassegrain telescope is completely contained in a liquid helium dewar. The focal plane array consists of Fabry optics and four detectors which each have a 12 arc minute field of view. Both photoconductive and bolometer detectors are utilized at effective wavelengths of 20, 80, 100 and 150 microns. In 1977 the telescope was used to make multicolor large scale maps of 70 square degrees in the Cygnus X region and the W3 region.
In support of two infrared astronomy space projects, the IRAS satellite and the IRT on Spacelab 2, low-background tests were carried out on the performance and characterization of Si:Ga, Si:As, Si:Sb and Ge:Ga photoconductive detectors. These test results represent a useful appraisal of this family of detectors when operated at 1.8-4.2 K and at background power levels of 10 to the -14th to 10 to the -13th W. In addition to detector performance data, results are also presented on cryogenically cooled MOSFET amplifiers operated in the source follower and in the balanced-dc-TIA configurations.
The photoconductive absorption of silicon devices at 1.15 microns is through band-to-band transitions with the simultaneous absorption of a 57.7 meV phonon. Its temperature dependence arises both from the changing phonon population and, more significantly, from the change in silicon bandgap with temperature. The temperature dependence of the photoresponse of quasi-intrinsic silicon samples is in good agreement with the optical absorption data of Macfarlane et al. More heavily doped silicon devices show a photoresponse extending to a lower temperature and having a smaller temperature dependence than intrinsic silicon. This is explained in terms of bandgap narrowing. Comparison with theoretical curves enables the resolution of bandgap reductions at the meV level.
Indirect measurement of wafer surface impurities has sensitivity of 300 monolayers. Photoconductivity-decay apparatus determines bulk recombination lifetime in semiconductor materials. Bulk impurity levels before and after annealing relate to level of surface contamination. Method evaluates wafer cleaning techniques, qualifying purity of chemical and deionized water used, or monitors production process.
Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.
Specialized coherent 10.6 micrometer infrared receivers were developed with infrared frequency responses approaching 5 GHz. Carbon dioxide lasers were employed for these applications because of their availability, stability, and high average power levels. Heterodyne receivers which employ extrinsic photoconductive Ge:Cu(Sb) mixers were developed for measurements of carbon dioxide laser scattering to determine: (1) the drive lower hybrid wave density fluctuations; and (2) the plasma ion temperature of the dense Tokamak plasmas.