SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.
NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.
Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.
High-temperature slow-crack-growth behaviour of hot-pressed silicon carbide was determined using both constant-stress-rate ("dynamic fatigue") and constant-stress ("static fatigue") testing in flexure at 1300 C in air. Slow crack growth was found to be a governing mechanism associated with failure of the material. Four estimation methods such as the individual data, the Weibull median, the arithmetic mean and the median deviation methods were used to determine the slow crack growth parameters. The four estimation methods were in good agreement for the constant-stress-rate testing with a small variation in the slow-crack-growth parameter, n, ranging from 28 to 36. By contrast, the variation in n between the four estimation methods was significant in the constant-stress testing with a somewhat wide range of n= 16 to 32.
From commercial origins as a molybdenum molecular beam nozzle, a ceramic nozzle of silicon carbide (SiC) was developed for space environment simulation. The nozzle is mechanically stable under extreme conditions of temperature and pressure. A heated, continuous, supersonically-expanded hydrogen beam with a 1% argon seed produced an argon beam component of nearly 4 km/s, with an argon flux exceeding 1x1014 /cm2.s. This nozzle was part of a molecular beam machine used in the Atmospheric Experiments Branch at NASA Goddard Space Flight Center to characterize the performance of the University of Texas at Dallas Ram Wind Sensor (RWS) aboard the Air Force Communications/Navigation Outage Forecasting System (C/NOFS) launched in the Spring of 2008.
The objective of this project is to design and build a laboratory scale extruder and with it to fiberize 5000 continuous feet of silicon-carbide-nitride precursor resin. Subsequently the objective is extended to include the cross-linking and pyrolysis of approximately 100 feet of the resin fiber. The extruder is designed to accommodate approximately 1 cubic centimeter samples at accurately controllable rates corresponding to take-up from a single orifice of a 25 micron fiber at speeds in the 1000 feet/minute region. Positive feed delivery is achieved with a cylinder and piston driven by a geared down electric motor. Gear reduction is achieved primarily with off-the-shelf parts. Over 5000 feet of fiber, 20 to 30 micron diameter, are spun from precursor resin samples. The formation of continuous silicon carbide/silicon nitride fiber appears to be feasible.
This paper deals with the measurement of the total hemispherical emittance of a silicon carbide coated carbon composite which is the thermal control material of the nose cone and leading edges of the Space Shuttle. In order to effect the thermal design of the spacecraft, it is desirable to have emittance data available for the temperature range 100 K to 2000 K to encompass the thermal extremes associated with orbiting and reentry conditions. Since the multiple thermal cycling associated with fifty to one hundred missions might result in substantial property changes, the data to be presented are for the low temperature regime 100 K to 450 K for both virgin material and material which was thermally treated to simulate multiple reentries. The discussion emphasizes the identification of possible sources of error in the measurement of equilibrium temperatures and the extent to which these measurement errors or uncertainties would alter the derived emittance values.
Thin buffer layer of SiC minimizes effects of lattice mismatch. Approach consists of growing single-crystal layer of cubic SiC on single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Process developed for production of large-area single-crystal wafers of cubic silicon carbide (SiC) for semiconductor devices; also used to make devices themselves. Applications include electronics for high temperature (up to 900 C) and electronics for very high frequencies.
The upper and lower bounds of the bulk, shear, and Young's moduli are calculated point-by-point along the radius of SCS-6 silicon carbide fibers using the Hashin-Shtrikman equations from considerations of the Auger spectra along the fiber radius. The calculated values are in agreement with measurements of the average Young modulus obtained over relatively large radial regions of the fiber using scanning acoustic microscopy (SAM). The validity of the Hashin-Shtrikman bounds calculations is enhanced by the agreement found between experimental SAM V(z) curves for fixed z along the fiber radius and the theoretical bounds of such curves obtained from the bounds of the calculated bulk and shear moduli.
The upper and lower bounds of the bulk, shear, and Young's moduli are calculated point-by-point along the radius of SCS-6 silicon carbide fibers using the Hashin-Shtrikman equations from considerations of the Auger spectra along the fiber radius. The calculated values are in agreement with measurements of the average Young modulus obtained over relatively large radial regions of the fiber using scanning acoustic microscopy (SAM). The validity of the Hashin-Shtrikman bounds calculations is enhanced by the agreement found between experimental SAM V(z) curves for fixed z along the fiber radius and the theoretical bounds of such curves obtained from the bounds of the calculated bulk and shear moduli.
Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).
This presentation concentrates on the potential of long duration Venus surface missions, and the role of Silicon Carbide (SiC) electronics and sensor advancements in such exploration. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations. These electronics have been demonstrated for more than a year at 500˚C, and 60 days in high-fidelity simulated Venus surface conditions [1-2]. Further, high temperature chemical sensing technology, including SiC-based gas sensors, integrated with SiC electronics can enable future exploration of the Venus surface atmosphere [3]. Continued maturation of these high temperature electronics and sensors has been part of the Long-Lived In-Situ Solar System Explorer (LLISSE) project to provide an operational system for in situ exploration of the Venus surface up to 60 days [4]. A key focus of this work includes increasing the complexity and decreasing the power consumption of the ICs which will pave the way to enhanced capabilities, such as long-duration Venus seismic measurements and other mission capabilities currently under development. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This presentation will give an overview of possible extended duration Venus surface exploration and some of the SiC-based technologies that can enable this exploration.
Contact preparation at low temperatures is possible with the use of a copper-titanium eutectic alloy. Contacts formed with this alloy are ohmic on p-type silicon carbide and rectifying on n-type.
Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh and W) in contact with single crystal silicon carbide riders. Results indicate that the friction force in the plowing of metal and the groove height (corresponding to the wear volume of the groove) decrease linearly as the shear strength of the bulk metal increases. The coefficient of friction and groove height generally decrease, and the contact pressure increases with an increase in solute content of binary alloys. There appears to be very good correlation of the solute to iron atomic ratio with the decreasing rate of change of coefficient of friction, the decreasing rate of change of groove height and the increasing rate of change of contact pressure with increasing solute content. These rates of change increase as the solute to iron atomic radius ratio increases or decreases from unity.
High temperature insulating articles having improved performance characteristics are described. The articles comprise fabrics of closely woven refractory or heat resistant fibers having particles of silicon carbide dispersed at least partially through the fabric and bonded to the fibers with an emulsifiable polyethylene wax. Such articles exhibit significantly increased high temperature emittance characteristics and an improved retention of integrity and flexibility after prolonged exposure to high temperature.
Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.
A process for fabricating relatively thin SiC diaphragms may include fast Reactive Ion Etching (RIE) followed by Dopant Selective Reactive Ion Etching (DSRIE). The process may produce silicon carbide (SiC) diaphragms thinner than 10 microns. These thinner, more sensitive diaphragms may then be used to effectively resolve sub-psi pressures in jet engines, for example.
Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh, and W) in contact with single-crystal silicon carbide riders. Results indicate that the coefficient of friction and groove height (corresponding to the wear volume) decrease linearly as the shear strength of the bulk metal increases. The coefficient of friction and groove height generally decrease with an increase in solute content of binary alloys. A separate correlation exists between the solute to iron atomic radius ratio and the decreasing rates of change of coefficient of friction and groove height with increasing solute content. These rates of change are minimum at a solute to iron radius ratio of unity. They increase as the atomic ratio increases or decreases linearly from unity. The correlations indicate that atomic size is an important parameter in controlling friction and wear of alloys.