Bubble-growth calculation without neglect of interfacial discontinuities.
Bubble growth calculated including liquid vapor phase changing interface nonequilibrium discontinuity
Bornhorst, W. J.↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Influence of electric fields on the rate of growth of molecular solids.
Electric field control of growth rates of insulating organic crystals from vapor phase
Labes, M. M.↗
The photolytic conversion of an allene to a cyclopropylidene - The photolysis of 1,2- cyclononadiene.
Photolytic conversion of allene to cyclopropylidene, discussing cyclononadiene in vapor phase and resulting product
Karafiath, E.↗
The preparation and properties of vapor- deposited epitaxial InAs sub 1-x P sub x using arsine and phosphine.
Vapor phase epitaxial production of indium arsenic phosphide crystalline layers, discussing electron mobilities, electrical resistivities and doping
Clough, R. B.↗
P-n junctions formed in gallium antimonide
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
Clough, R.↗
Preparation of pigments for space-stable thermal control coatings Interim summary report, 1 Jun. 1968 - 30 Apr. 1969
Control of vapor phase reaction kinetics to produce pigments by homogeneous nucleation
Burroughs, J. E.↗
A basic study of the ignition of hypergolic liquid propellants Final report
Theoretical analysis of ignition mechanisms and quantitative analysis of vapor phase reaction products of dimethylhydrazines with nitrogen dioxide
Breen, B. P.↗
Surface effects and the role of propylene during the partial oxidation of propane in a flow reactor
Reactor surface and propylene role during vapor phase partial oxidation of propane in continuous flow tubular reactors
Albright, L. F.↗
Steady-state and transient performance of hot reservoir gas-controlled heat pipes
Liquid or vapor phase working fluids penetration effects on steady state and transient performance of hot reservoir gas controlled heat pipes
Fleischman, G. L.↗
Fluid dispensing apparatus and method Patent
Method and feed system for separating and orienting liquid and vapor phases of liquid propellants in zero gravity environment
Papell, S. S.↗
Growth of boron doped diamond by vapor deposition
Growth of p-type semiconducting diamond by vapor phase deposition using methane-diborane doping gas mixture in presence of diamond seed crystals
Poferl, D. J.↗
Stress corrosion cracking of titanium - Some surface chemical reactions in methanol and carbon tetrachloride
Vapor phase interaction of methanol and carbon tetrachloride with Ti thin films, discussing Ti stress corrosion cracking implications
Harkins, C. G.↗
Mass spectrometric determination of the dissociation energy of ScC2 and ScC4
Mass spectrometric determination of vapor phase dissociation energies of scandium dicarbide and scandium tetracarbide
Kohl, F. J.↗
The preparation and properties of vapor-grown In/1-x/Ga/x/P
Single crystal indium gallium phosphide p-n junction preparation by epitaxial vapor phase growth technique, determining energy gap dependence on alloy composition
Clough, R. B.↗
Temperature control of a cryogenic bath
Foreign gas introduced into vapor phase above liquid region cools cryogenic baths. Equipment consists of gas tank and cover of styrofoam. Helium is considered the best choice to produce cooling, though any gas with boiling point lower than that of bath liquid may be used.
Asher, I. M.↗
Preparation of pigments for space-stable thermal control coatings
Calculations of mixing conditions in the vapor reaction system established criteria for reactor design. Gas mixing was optimized by jet action and vapor phase production of zinc orthotitanate has been accomplished.
Campbell, W. B.↗
Some observations on uranium carbide alloy/tungsten compatibility
Chemical compatibility between both pure and thoriated tungsten and uranium carbide alloys was studied at 1800 C for up to 3300 hours. Alloying with zirconium carbide appeared to widen the homogeneity range of uranium carbide, making additional carbon available for reaction with the tungsten. Reaction layers were formed both by vapor phase reaction and by physical contact, producing either or both UWC2 and W2C, dependent upon the phases present in the starting fuel alloy. Formation of UWC2 results in slow growth of the reaction layer with time, while W2C reaction layers grow rapidly, allowing equilibrium to be reached in less than 2500 hours at 1800 C. The presence of a thermal gradient had no effect on the reactions observed nor did the presence of thoria in the tungsten clad.
Phillips, W. M.↗
Development of high temperature gallium phosphide rectifiers
Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.
Craford, M. G.↗