Seeded cesium plasma diodes and the Penning effect
Hg and Cd seeded Ce plasma wide-spaced diode without external light source investigated for Penning effect on diode performance
Kaufman, A. J.↗
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A CW Gunn diode bistable switching element
A current-controlled bistable switching element using a CW Gunn diode is reported. Switching rates of the order of 10 MHz were obtained with modest circuits. Switching was initiated by current pulses of short duration (5 to 10 nsec). Rise times of the order of several nanoseconds could be obtained. The apparent mechanism which permits the bistable operation of the Gunn diode is the reduction in the mobility of the GaAs active layer due to heating of the device.
Hurtado, M.↗
In-pile and out-of-pile testing of a molybdenum-uranium dioxide cermet fueled themionic diode
The behavior of Mo-UO2 cermet fuel in a diode for thermionic reactor application was studied. The diode had a Mo-0.5 Ti emitter and niobium collector. Output power ranged from 1.4 to 2.8 W/cm squared at emitter and collector temperatures of 1500 deg and 540 C. Thermionic performance was stable within the limits of the instrumentation sensitivity. Through 1000 hours of in-pile operation the emitter was dimensionally stable. However, some fission gases (15 percent) leaked through an inner clad imperfection that occurred during fuel fabrication.
Diianni, D. C.↗
Injection locking in IMPATT diode oscillators.
A model for an injection-locked IMPATT diode oscillator is presented and used to calculate the locking behavior of the oscillator at different operating points. The model is compared with earlier theories of injection locking in IMPATT diode oscillators and the calculated results are compared with experimental observations.
Gupta, M. S.↗
Comparison of computer-acquired performance data from several fixed spaced planar diodes.
Performance data are compared for thermionic diodes with various tungsten or rhenium emitters and niobium or molybdenum collectors. The planar converters have guard-ringed collectors and a fixed space of 10 mils (0.254 mm). The data were acquired using a computer. The parameters are the temperatures of the emitter Te, collector Tc, and cesium reservoir Tr. The composite plots have constant Te and varying Tc or Tr or both. The envelope and composite plots having constant Te are presented. The diodes were tested at increments between 1500 and 2000 K for the emitters, 750 and 1100 K for the collectors, and 520 and 650 K for the reservoirs.
Manista, E. J.↗
Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics
The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.
Been, J. F.↗
Study of the collector/heat pipe cooled externally configured thermionic diode
A collector/heat pipe cooled, externally configured (heated) thermionic diode module was designed for use in a laboratory test to demonstrate the applicability of this concept as the fuel element/converter module of an in-core thermionic electric power source. During the course of the program, this module evolved from a simple experimental mock-up into an advanced unit which was more reactor prototypical. Detailed analysis of all diode components led to their engineering design, fabrication, and assembly, with the exception of the collector/heat pipe. While several designs of high power annular wicked heat pipes were fabricated and tested, each exhibited unexpected performance difficulties. It was concluded that the basic cause of these problems was the formation of crud which interfered with the liquid flow in the annular passage of the evaporator region.
Source record↗
Diode-quad bridge circuit means
A transducer and frequency discriminator circuit is described including a four-terminal circulating diode bridge, a first pair of capacitors connected in series across two terminals of the bridge, and a second pair of capacitors, or other impedance elements, connected in series across the other two terminals of the bridge. A source of balanced alternating electrical energy for energizing the circuit is coupled between the commonly connected plates of the first pair of capacitors and the commonly connected plates of the second pair of capacitors. Due to the operation of the diode bridge, the sum of the resultant charges developed on the first pair of capacitors is proportional to the relationship between the respective capacitors of the second pair, and consequently, an output voltage taken across the first pair of capacitors will be proportional to that relationship.
Harrison, D. R.↗
Semiconductor diode laser material and devices with emission in visible region of the spectrum
Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.
Ladany, I.↗
GaAs laser diode pumped Nd:YAG laser
A 1.5-mm by 3-cm neodymium-ion doped YAG laser rod has been side pumped using a GaAs laser diode array tuned to the 8680-A absorption line, achieving a multimode average output power of 120 mW for a total input power of 20 W to the final-stage laser diode drivers. The pumped arrangement was designed to take advantage of the high brightness of a conventional GaAs array as a linear source by introducing the pump light through a slit into a close-wrapped gold coated pump cavity. This cavity forms an integrating chamber for the pump light.
Conant, L. C.↗
High voltage power Schottky diodes
Calculations of the low frequency rectification efficiency of power Schottky diodes show that silicon Schottky rectifiers have lower losses than silicon p-n junctions for all voltage applications up to approximately 150 volts. These calculations are presented. Large area Schottky diodes have been fabricated which exhibit near ideal reverse leakage at 100 C out to approximately 100 volts and which have current capability of 100 A. Fabrication details and performance data are presented.
Cordes, L. F.↗
The Lockheed diode array magnetograph
A new magnetograph using a solid state monolithic linear silicon diode array has been constructed at Lockheed Solar Observatory. This magnetograph uses a digital image processor, and makes data available both in digital and analog form. The diode array detector is capable of a signal-to-noise ratio of 2000:1 or better when cooled to a temperature of -40 deg centigrade. Thus, intensity differences of the order of one part in a thousand may easily be detected without signal averaging. This instrument may be considered a prototype for an instrument using a two-dimensional array. The magnetograph is now fully operational, and is being used to produce data for statistical studies of solar magnetic field diffusion.
Smithson, R. C.↗
Research and development for improved lead-salt diode lasers
A substantial increase in output power levels for lead-salt diode lasers, through the development of improved fabrication methods, as demonstrated. The goal of 1 mW of CW, single-mode, single-ended power output, was achieved, with exceptional devices exhibiting values greater than 8 mW. It was found that the current tuning rate could be controlled by adjusting the p-n junction depth, allowing the tuning rate to be optimized for particular applications. An unexpected phenomenon was encountered when crystal composition was observed to be significantly altered by annealing at temperatures as low as 600 C; the composition was changed by transport of material through the vapor phase. This effect caused problems in obtaining diode lasers with the desired operating characteristics. It was discovered that the present packaging method introduces gross damaging effects in the laser crystal through pressure applied by the C-bend.
Butler, J. F.↗
Coupling characteristics of thin-film metal-oxide-metal diodes at 10.6 microns
Direct detection experiments have demonstrated the coherent coupling of 10.6 micrometer radiation into photolithographically fabricated metal-oxide-metal tunnel junctions. A CO2 laser beam mechanically chopped at 1 KHz was focused at a variable angle of incidence with a power density of about 10 W/sq cm at the diodes. Diodes in which the junction resistance was much greater than the lead resistance displayed angular characteristics dominated by coherent antenna coupling.
Wang, S. Y.↗
Diodes stabilize LED output
Small-signal diodes are placed in series with light-emitting diodes (LED's) to stabilize LED output against temperature fluctuations. Simple inexpensive method compensates for thermal fluctuations over a broad temperature range. Requiring few components, technique is particularly useful where circuit-board space is limited.
Deters, R. A.↗
Room-temperature-operation visible-emission semiconductor diode lasers
There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported.
Ladany, I.↗
A shock isolator for diode laser operation on a closed-cycle refrigerator
A device developed to isolate the diode laser from impact shocks delivered during the expansion phase of the Solvay cycle of a helium refrigerator is briefly described. The device uses intermediate cold stations in the stand-off, which permit the stand-off to be short and rigid while minimizing the thermal load at the diode mount.
Jennings, D. F.↗
Development of a thermal diode heat pipe for cryogenic applications
The paper describes the development of a cryogenic thermal diode heat pipe for space flight applications. The diode has ethane working fluid, and uses the liquid blockage technique with an internal blocking orifice, to accomplish shutoff in the reverse mode. The pipe is 0.635 cm OD by 75.82 cm long including a 2.54 cc excess liquid reservoir. Experimental data are presented for forward mode throughput vs tilt, film coefficients, and reverse mode characteristics. Transport capacity is 1000 w-cm at 2.5 cm tilt. Evaporator and condenser film coefficients were 0.92 and 1.64 w/sq cm K, respectively.
Quadrini, J. A.↗