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Design features that assist with tritium management in the TMIST-3 materials irradiation experiments were presented at the 4th DEVICE-MTR workshop at Pacific Northwest National Laboratory May 2022.
In the study of materials on electron probe devices in the field of action of the electron beam, a contaminating hydrocarbon film is formed, which affects the experimental results. In this paper, we have studied the influence of a contamination film on carbon-film-coated dielectrics on the intensity of cathodoluminescence and characteristic X-ray lines. The absorption coefficient of the contamination film in the visible and UV ranges has been determined. Filming mechanisms at different parameters of the electron beam have been discussed.
The National Renewable Research Laboratory (NREL) Solar Radiation Research Laboratory (SRRL), in collaboration with Arable Labs Inc., deployed, calibrated, and characterized Arable Lab's Mark low-cost, multiparameter sensor system. Arable Labs was selected by the U.S. Department of Energy for a small business voucher to work with NREL to tap into the knowledge and expertise Arable needs to tailor and evaluate the Mark device for broader solar energy applications. The device is a complete and independent unit. It is a self-powered, off-the-shelf solution for remote solar irradiance and meteorological sensing and data collection. Calibration of devices against the SRRL instruments provides an understanding of the quality of a new instrument compared to peers. The characterization process provides an understanding of the variability compared to high-quality instruments and essentially provides methods to correct the sources of the variabilities.
Mixed organic–inorganic halide perovskite-based solar cells have attracted interest in recent years due to their potential for both terrestrial and space applications. Analysis of interfaces is critical to predicting device behavior and optimizing device architectures. Most advanced tools to study buried interfaces are destructive in nature and can induce further degradation. Ion beam techniques, such as Rutherford backscattering spectrometry (RBS), is a useful non-destructive method to probe an elemental depth profile of multilayered perovskite solar cells (PSCs) as well as to study the inter-diffusion of various elemental species across interfaces. Additionally, PSCs are becoming viable candidates for space photovoltaic applications, and it is critical to investigate their radiation-induced degradation. RBS can be simultaneously utilized to analyze the radiation effects induced by He+ beam on the device, given their presence in space orbits. In the present work, a 2 MeV He+ beam was used to probe the evidence of elemental diffusion across PSC interfaces with architecture glass/ITO/SnO2/Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3/spiro-OMeTAD/MoO3/Au. During the analysis, the device active area was exposed to an irradiation equivalent of up to 1.62 × 1015 He+/cm2, and yet, no measurable evidence (with a depth resolution ∼1 nm) of beam-induced ion migration was observed, implying high radiation tolerance of PSCs. On the other hand, aged PSCs exhibited indications of the movement of diverse elemental species, such as Au, Pb, In, Sn, Br, and I, in the active area of the device, which was quantified with the help of RBS.
Purpose: To discuss several factors surrounding the decision on when to recalibrate the ArcCHECK device as well as present a simple and efficient monthly check to evaluate ArcCHECK calibrations. Methods: ArcCheck (Sun Nuclear) calibrations were evaluated monthly by measuring a 25×25cm{sup 2} field with 100 MU. Since ArcCHECK measurements are run on an almost nightly basis, such additional square field measurements are obtained with minimal additional effort. An in-house MATLAB script compares two radial (y-direction) profiles from the top/center of the new measurement relative to a baseline measurement acquired at the last device calibration. The program automatically generates PDF profile and percent difference comparisons for inspection. Recalibration is based on inspection of measurement profile shapes and percent differences from the baseline measurement. Results: The method presented here shows the utility of a simple monthly check for evaluating ArcCHECK calibrations, and in addition shows the importance of recalibrating after Linac beam steering. Our device required recalibration approximately every 8–10 months. However, for ease of scheduling, we propose a bi-annual recalibration interval. Clinics with a lighter/heavier IMRT/VMAT QA case load may require different recalibration intervals, which are easily determined using the single-field method presented. Analysis of additional square fields is also easily incorporated, if desired. We further illustrate the importance of array recalibration given that diode irradiation is not uniform over the entire device, with central diodes receiving more than 900 Gy over the course of 10 months and peripheral diodes receiving as little as 50 Gy (in our experience). Finally, we show that timely device recalibration decreases spread in clinical IMRT/VMAT QA gamma passing rates. Conclusion: Quality assurance for ArcCHECK array calibrations is important to ensure quality IMRT/VMAT QA comparisons. For many clinics, calibrations should be performed at least annually, if not more frequently, based on use of the proposed monthly check.
Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.
Buried channel CCD shift registers were irradiated with 15 MeV neutrons. The irradiations were performed at 80 K and 295 K on operating devices with normal clocks and bias voltages applied. Dark current increased from the pre-irradiation value of 7 nA/sq cm to 1,600 nA/sq cm at 1 x 10 to the 13th power n/sq cm. The input gate threshold shift observed at 80K was minus 0.9 volts per 10 to the 13th power n/sq cm, a factor of 4 less than that predicted from a first order calculation of the equivalent ionization dose of neutrons in the oxide. Transfer efficiency measurements yielded a bulk electron trap creation rate for neutron irradiation of 14.0 cm to the minus 1 power at 295 K with a trap emission time constant of 25 microseconds.
We present a yield analysis of tandem devices consisting of GaInP top cells on Si or GaAs bottom cells with different terminal configurations. Inputs are the I-V and external quantum efficiency of the individual subcells and the irradiance-dependent module temperature of the bottom cell. Our model calculates the temperature of the tandem module by taking into account the performance, spectral working range and luminescent coupling of the different tandem devices, enabling an irradiance- and weather-dependent yield analysis for these modules. We apply the model to compare two types of two junction devices, a GaInP/GaAs monolithically grown tandem device, and a GaInP top cell stacked on a Si bottom cell, the present two best dual junction devices. When the subcells are series connected both technologies perform equally well. The performance of the GaInP/Si can be significantly improved relatively by 5.8% using 3-terminal (3T) devices with a back-contacted bottom cell instead of a 2T configuration, showing a possible benefit when using Si back contacted cells. For GaInP/Si, the 3T-device works as well as the 4T-device, enabling the integration of monolithic tandem cells into modules at comparably high efficiencies.
In this work, we have performed neutron radiation hardness testing for commercially available 650 V/7.5 A GaN power HEMT. The devices were tested at Los Alamos Neutron Science Center (LANSCE) inside Irradiation of Chips Electronics, ICE house-1 at a flux density of 10(6) n/cm(2) -s and energy level above 1 MeV, which is approximately 10(6) times higher than neutron radiation at airliner flight height (30,000 ft). During the experiments, the devices were stressed electrically, thermally and irradiated with neutron radiation. We have observed degradation of AlGaN layer due to accelerated neutron radiation (1.54 x 10(10) n/cm(2) above 1.5 MeV neutron energy) under electrical stress condition. We have performed parametric defect analysis through step-by-step application of neutron irradiation, thermal stress and electrical bias, and observed highest degradation of threshold voltage (0.14 V) for combined electrical stress and neutron irradiation.
The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.
Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.
Light emitting diodes (LEDs) are a promising irradiation source for plant growth in space. Improved semiconductor technology has yielded LED devices fabricated with gallium aluminum arsenide (GaAlAs) chips which have a high efficiency for converting electrical energy to photosynthetically active radiation. Specific GaAlAs LEDs are available that emit radiation with a peak wavelength near the spectral peak of maximum quantum action for photosynthesis. The electrical conversion efficiency of installed systems (μmol s -1 of photosynthetic photons per watt) of high output LEDs can be within 10% of that for high pressure sodium lamps. Output of individual LEDs were found to vary by as much as 55 % from the average of the lot. LED ratings, in mcd (luminous intensity per solid angle), were found to be proportional to total photon output only for devices with the same dispersion angle and spectral peak. Increasing current through the LED increased output but also increased temperature with a consequent decrease in electrical conversion efficiency. A photosynthetic photon flux as high as 900 μmol m -2 s -1 has been produced on surfaces using arrays with LEDs mounted 7.6 mm apart, operating at a current of 50 mA device -1 and at an installed density of approximately 17,200 lamps m -2 of irradiated area. Advantages of LEDs over other electric light sources for use in space systems include long life, minimal mass and volume and being a solid state device.
Purpose: Small field output correction factors have been studied by several research groups for the PTW 60019 microDiamond (MD) dosimeter, by comparing the response of such a device with both reference dosimeters and Monte Carlo simulations. A general good agreement is observed for field sizes down to about 1 cm. However, evident inconsistencies can be noticed when comparing some experimental results and Monte Carlo simulations obtained for smaller irradiation fields. This issue was tentatively attributed by some authors to unintentional large variations of the MD active surface area. The aim of the present study is a nondestructive experimental determination of the MD active surface area and active volume. Methods: Ten MD dosimeters, one MD prototype, and three synthetic diamond samples were investigated in the present work. 2D maps of the MD response were recorded under scanned soft x-ray microbeam irradiation, leading to an experimental determination of the device active surface area. Profiles of the device responses were measured as well. In order to evaluate the MD active volume, the thickness of the diamond sensing layer was independently evaluated by capacitance measurements and alpha particle detection experiments. The MD sensitivity, measured at the PTW calibration laboratory, was also used to calculate the device active volume thickness. Results: An average active surface area diameter of (2.19 ± 0.02) mm was evaluated by 2D maps and response profiles of all the MDs. Average active volume thicknesses of (1.01 ± 0.13) μm and (0.97 ± 0.14) μm were derived by capacitance and sensitivity measurements, respectively. The obtained results are well in agreement with the nominal values reported in the manufacturer dosimeter specifications. A homogeneous response was observed over the whole device active area. Besides the one from the device active volume, no contributions from other components of the housing nor from encapsulation materials were observed in the 2D response maps. Conclusions: The obtained results demonstrate the high reproducibility of the MD fabrication process. The observed discrepancies among the output correction factors reported by several authors for MD response in very small fields are very unlikely to be ascribed to unintentional variations of the device active surface area and volume. It is the opinion of the authors that the role of the volume averaging as well as of other perturbation effects should be separately investigated instead, both experimentally and by Monte Carlo simulations, in order to better clarify the behaviour of the MD response in very small fields.
Candidate tungsten armor materials in a magnetic confinement fusion device must be able to withstand thermal variation that leads to internal stresses caused by the impinging heat load. In addition, the thermomechanical properties of these materials are degraded by irradiation-induced defect accumulation. Fission reactor–based irradiation data are used to predict the fusion neutron damage and property change. This study examines the motivation and design of a custom-designed three-point bend test for neutron-irradiated disk specimens that are 3 mm in diameter to be able to define the flexural strength of advanced tungsten materials, alloys, and composites—and to the extent that embrittlement occurs after neutron irradiation. The theory provided shows a calculation for the flexural deflection and shear deflection due to the small-geometry constraints. A finite element deformation analysis is performed to evaluate the mechanical stress field of disk bend specimens. The stress values above 80% of the maximum stress are concentrated in 2.4 mm of the 3.0-mm length of the centerline across the tungsten disk diameter. A bend test fixture has been designed and fabricated to enable testing of these specimens with precisely engineered tolerance and minimal machine compliance. This fixture will be able to be placed inside a universal testing frame at elevated temperatures for the mechanical property evaluation of future neutron-irradiated disk specimens.
Experimentation at irradiation test facilities are essential for reducing the innovation time of developmental fuels, fuel cladding, and structural materials employed in next-generation nuclear reactors. However, due to the harsh conditions generated in such reactors and limited instrumentation space, the evaluation of a material’s mechanical properties is often limited to characterization after the materials have been removed from reactor conditions, or post-irradiation examination. These experiments are costly, time-consuming, and fail to capture the critical time-evolving phenomena that occur during the irradiation experiments. Advanced manufactured digital image correlation patterns and strain sensor devices serve as two promising technologies that can be deployed in the confined and challenging orientations of these irradiation experiments while also providing key insight on salient materials phenomena (i.e., mechanical properties). To guide the development of the printed strain sensors prior to their deployment in critical experiments, the adhesion strength between the substrate and printed film interface is measured via tensile testing and a non-contact laser-induced spallation technique. The establishment of these process control steps helped guide the successful fabrication and testing of direct-write strain sensing devices discussed in this work. The fabrication process controls are necessary for enabling the sustained operation of these strain sensing device through experimentation and minimize the potential for premature failure.
Experimentation at irradiation test facilities are essential for reducing the innovation time of developmental fuels, fuel cladding, and structural materials employed in next-generation nuclear reactors. However, due to the harsh conditions generated in such reactors and limited instrumentation space, the evaluation of a material’s mechanical properties is often limited to characterization after the materials have been removed from reactor conditions, or post-irradiation examination. These experiments are costly, time-consuming, and fail to capture the critical time-evolving phenomena that occur during the irradiation experiments. Advanced manufactured digital image correlation patterns and strain sensor devices serve as two promising technologies that can be deployed in the confined and challenging orientations of these irradiation experiments while also providing key insight on salient materials phenomena (i.e., mechanical properties).To guide the development of the printed strain sensors prior to their deployment in critical experiments, the adhesion strength between the substrate and printed film interface is measured via tensile testing and a non-contact laser-induced spallation technique. The establishment of these process control steps helped guide the successful fabrication and testing of direct-write strain sensing devices discussed in this work. The fabrication process controls are necessary for enabling the sustained operation of these strain sensing device through experimentation and minimize the potential for premature failure.
This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
Purpose: To investigate the potential use of the Raven™ (LAP of America Laser Applications) for real time AQA of Cyberknife™ with InCise2 MLC (Accuray™ Medical). Methods: At setup, the Raven was rotated 45° on which an Accuray™ AQA cube was positioned. Three different AQA plans for fixed cone, InCise2MLC, and a modified MLC plan were delivered repeatedly ten times. The additional shapes in modified AQA plan enable additional reproducibility checks for all the MLC pairs. During the test, the cube was aligned by imbedded fiducials and irradiated. The two angled radiation beams aimed center tungsten ball of the cube and projected 45° to phosphor screen and registered by a CCD camera of the Raven device. The centricity of the metal ball in the irradiated field was then analyzed using Matlab codes. Results: For AP images, the average offsets of X, Y, and radial directions are 0.24 ± 0.04 mm, 0.25 ± 0.02 mm and 0.35 ±± 0.03 mm respectively for the cone; 0.34 ± 0.02 mm, 0.49 ± 0.04 mm and 0.60 ± 0.04 mm respectively for the MLC. For lateral images, they are 0.63 ± 0.05 mm, 0.11 ± 0.02 mm and 0.64 ± 0.04 mm respectively for the cone, 0.79 ± 0.08 mm, −0.23 ± 0.06 mm and 0.82 ± 0.09 mm respectively for the MLC. No inconsistent MLC shapes were found in the modified AQA group. Conclusion: The results are consistent with clinically acceptable values (≤1mm from baseline). The results suggest the potential of replacement of the standard AQA test with the novel real-time Raven device for Cyberknife daily QA. The modified MLC based AQA provides a more comprehensive MLC daily QA capability. Further improvements in its resolution and automatic analyzing capability are warranted.