X-ray and Auger transition probabilities to the 2p level of multiply ionized sulfur and chlorine
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A slightly modified version of the one-dimensional time-dependent energy-balance climate model of Ghil and Bhattacharya (1978) is presented. The albedo-temperature parameterization has been reformulated and the smoothing of the temperature distribution in the tropics has been eliminated. The model albedo depends on time-lagged temperature in order to account for finite growth and decay time of continental ice sheets. Two distinct regimes of oscillatory behavior which depend on the value of the albedo-temperature time lag are considered.
Integrated configuration for "differential" sequential processor is less susceptible to noise than one using discrete components. Accuracy of version is unaffected by sample-and-hold (S/H) acquisition speed, S/H droop rate, and stray pickup by separate card-mounted parts.
A numerical procedure to compute the conformal mapping of a given n-tuply connected region onto a region with any specified boundary shapes and with several possible normalizations is developed and implemented. Procedures for calculating translation and magnification parameters are given.
The applicability of iterative optical processors in environments requiring a short transient response time is analyzed. An approach is proposed utilizing acousto-optic single dimension light modulators where the matrix is the outer product of two vectors. The problems associated with a nonnegative real representation are addressed. A solution is proposed at some cost of processor speed.
Realization of a bit-serial multiplication algorithm for the encoding of Reed-Solomon (RS) codes on a single VLSI chip using NMOS technology is demonstrated to be feasible. A dual basis (255, 223) over a Galois field is used. The conventional RS encoder for long codes ofter requires look-up tables to perform the multiplication of two field elements. Berlekamp's algorithm requires only shifting and exclusive-OR operations.
Observations from the Voyager 1 pass by the Io flux tube strongly suggest that large amplitude standing Alfven waves are generated as Jovian plasma flows past Io. It has recently been proposed by Gurnett and Goertz (1981) that this Io generated standing Alfven wave system extends an appreciable way around the Io L-shell. Observations are presented here of magnetic perturbations found in the Pioneer 10 record as it crossed the Io L-shell. The field perturbations are found to be qualitatively consistent with the passage of the spacecraft through a standing Alfven wave pattern. The observations suggest an Alfven Mach number of 0.03, which is 1/5 the value inferred from Voyager 1 observations. This implies a lower plasma density at the time of the flyby of Pioneer 10.
Realization of a bit-serial multiplication algorithm for the encoding of Reed-Solomon (RS) codes on a single VLSI chip using NMOS technology is demonstrated to be feasible. A dual basis (255, 223) over a Galois field is used. The conventional RS encoder for long codes often requires look-up tables to perform the multiplication of two field elements. Berlekamp's algorithm requires only shifting and exclusive-OR operations.
Way found to exploit Massey-Omura multiplication algorithm. Generalized algorithm locates normal basis in Galois filed GF(2m) and enables development of another algorithm to construct product function.
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Wall-level CW solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35 percent at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.
Double-barrier quantum-well GaAs diode achieved 0.61 percent efficiency as frequency tripler when operated at input frequency of 63.7 GHz, nearly one-tenth cutoff frequency of diode. Efficiency increased with drive level up to maximum input power available, 40 mW. Diodes studied for use in local-oscillator chains in microwave radiometers. Potential applications include spectrometers and radar.
Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:1 at room temperature, and nearly 10:1 at 77 K, were measured) suggest that high-speed devices based on the character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency oscillations. In the laboratory attempts were made to increase the frequency and power of these oscillators and to demonstrate several different high-frequency devices.
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A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.
Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.
The efficient performance of an airplane requires that certain adjustments be made as the density of the air through which the airplane passes changes. The safety of the over-dimensioned aircraft engine depends upon careful manipulation of spark advance and throttle opening and a proper control of a variable pitch propeller, if the maximum performance of the supercharged engine is to be obtained. It is evident that there is a real need for satisfactory devices to make such adjustments automatically. Discussed here is a method of automatic compensation which deserves consideration in the design of such devices. Existing schemes for automatic compensation all depend upon some contrivance which functions primarily because of changes in atmospheric pressure. In these devices a leak in the supposedly tight chamber means utter failure. The elimination of this source of danger is one of the aims of the method of altitude compensation described here. The change suggested is to make the source of operation the difference between atmospheric pressure and some multiple of atmospheric pressure instead of the difference between the atmospheric pressure and that of the gas confined in a tight chamber. The design of a device based on this method of altitude compensation is given.
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