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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Nonlinear dynamics of attractive magnetic bearings

The nonlinear dynamics of a ferromagnetic shaft suspended by the force of attraction of 1, 2, or 4 independent electromagnets is presented. Each model includes a state variable feedback controller which has been designed using the pole placement method. The constitutive relationships for the magnets are derived analytically from magnetic circuit theory, and the effects of induced eddy currents due to the rotation of the journal are included using Maxwell's field relations. A rotor suspended by four electro-magnets with closed loop feedback is shown to have nine equilibrium points within the bearing clearance space. As the rotor spin speed increases, the system is shown to pass through a Hopf bifurcation (a flutter instability). Using center manifold theory, this bifurcation can be shown to be of the subcritical type, indicating an unstable limit cycle below the critical speed. The bearing is very sensitive to initial conditions, and the equilibrium position is easily upset by transient excitation. The results are confirmed by numerical simulation.

Hebbale, K. V.↗
NASA NTRS1987

Cosmic ray heavy ion LET mapping for aluminum, silicon, and tissue targets

Linear energy transfer (LET) values in aluminum, silicon, and tissue targets have been calculated for 31 galactic cosmic ray ion species in eight different units. The values are described for single event upset (SEU) effect assessments or radiobiological evaluations. The data are presented in graphical and tabular form.

Stassinopoulos, E. G.↗
NASA NTRS1986

1986 Annual Conference on Nuclear and Space Radiation Effects, 23rd, Providence, RI, July 21-23, 1986, Proceedings

The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.

Ellis, Thomas D.↗
NASA NTRS1987

Response of a metal-oxide-semiconductor field-effect transistor to a cosmic-ray ion track

A cosmic-ray ion track passing perpendicularly through the oxide layer of an enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) forms a conducting path, the resistance of which is proportional to the stopping power of the cosmic ion and independent of the cross-sectional area of the ion track. The voltage across the oxide capacitance may drop below the threshold voltage if the gate bias is sufficiently low or if the external resistance in the gate-source circuit is sufficiently high. The first of a pair of MOSFETs forming a flip-flop circuit may thus be turned off, and the second transitor may turn on, providing it has a sufficiently short delay time, thereby completing a single-event upset.

Benumof, Reuben↗
NASA NTRS1987

Modeling of environmentally induced transients within satellites

A technique is described that allows an estimation of possible spacecraft charging hazards. This technique, called SCREENS (spacecraft response to environments of space), utilizes the NASA charging analyzer program (NASCAP) to estimate the electrical stress locations and the charge stored in the dielectric coatings due to spacecraft encounter with a geomagnetic substorm environment. This information can then be used to determine the response of the spacecraft electrical system to a surface discharge by means of lumped element models. The coupling into the electronics is assumed to be due to magnetic linkage from the transient currents flowing as a result of the discharge transient. The behavior of a spinning spacecraft encountering a severe substorm is predicted using this technique. It is found that systems are potentially vulnerable to upset if transient signals enter through the ground lines.

Stevens, N. John↗
NASA NTRS1988

Refined Transistor Model For Simulation Of SEU

Equivalent base resistance added. Theoretical study develops equations for parameters of Gummel-Poon model of bipolar junction transistor: includes saturation current, amplification factors, charging times, knee currents, capacitances, and resistances. Portion of study concerned with base region goes beyond Gummel-Poon analysis to provide more complete understanding of transistor behavior. Extended theory useful in simulation of single-event upset (SEU) caused in logic circuits by cosmic rays or other ionizing radiation.

Zoutendyk, John A.↗
NASA NTRS1988

Self-Testing Computer Memory

Memory system for computer repeatedly tests itself during brief, regular interruptions of normal processing of data. Detects and corrects transient faults as single-event upsets (changes in bits due to ionizing radiation) within milliseconds after occuring. Self-testing concept surpasses conventional by actively flushing latent defects out of memory and attempting to correct before accumulating beyond capacity for self-correction or detection. Cost of improvement modest increase in complexity of circuitry and operating time.

Chau, Savio, N.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
NASA NTRS1986

The Galileo Attitude and Articulation Control System - A radiation-hard, high precision, state-of-the-art control system

The Galileo Mission and Spacecraft design impose tight requirements on the Attitude and Articulation Control System (AACS). These requirements, coupled with the flexible spacecraft, the need for autonomy, and a severe radiation environment, pose a great challenge for the AACS designer. The resulting design and implementation are described, along with the discovery and solution of the Single-Event Upset problem. The status of the testing of the AACS in the Integration and Test Laboratory as well as at the spacecraft level is summarized.

Rhoads Stephenson, R.↗
NASA NTRS1988

Simulation of proton-induced energy deposition in integrated circuits

A time-efficient simulation technique was developed for modeling the energy deposition by incident protons in modern integrated circuits. To avoid the excessive computer time required by many proton-effects simulators, a stochastic method was chosen to model the various physical effects responsible for energy deposition by incident protons. Using probability density functions to describe the nuclear reactions responsible for most proton-induced memory upsets, the simulator determines the probability of a proton hit depositing the energy necessary for circuit destabilization. This factor is combined with various circuit parameters to determine the expected error-rate in a given proton environment. An analysis of transient or dose-rate effects is also performed. A comparison to experimental energy-disposition data proves the simulator to be quite accurate for predicting the expected number of events in certain integrated circuits.

Fernald, Kenneth W.↗
NASA NTRS1988

Transient aerodynamic forces on a fighter model during simulated approach and landing with thrust reversers

Previous wind tunnel tests of fighter configurations have shown that thrust reverser jets can induce large, unsteady aerodynamic forces and moments during operation in ground proximity. This is a concern for STOL configurations using partial reversing to spoil the thrust while keeping the engine output near military (MIL) power during landing approach. A novel test technique to simulate approach and landing was developed under a cooperative Northrop/NASA/USAF program. The NASA LaRC Vortex Research Facility was used for the experiments in which a 7-percent F-18 model was moved horizontally at speeds of up to 100 feet per second over a ramp simulating an aircraft to ground rate of closure similar to a no-flare STOL approach and landing. This paper presents an analysis of data showing the effect of reverser jet orientation and jet dynamic pressure ratio on the transient forces for different angles of attack, and flap and horizontal tail deflection. It was found, for reverser jets acting parallel to the plane of symmetry, that the jets interacted strongly with the ground, starting approximately half a span above the ground board. Unsteady rolling moment transients, large enough to cause the probable upset of an aircraft, and strong normal force and pitching moment transients were measured. For jets directed 40 degrees outboard, the transients were similar to the jet-off case, implying only minor interaction.

Humphreys, A. P.↗
NASA NTRS1988

Aircraft jolts from lightning bolts

The trend toward the use of composite materials and digital electronics has renewed the need to quantify the effects of lightning strikes to airplanes, since composite structures do not provide shielding equivalent to that of metal aircraft, and digital systems are potentially more susceptible to upset by electrical transients than are analog electronic systems. A research program, called the Storm Hazards Program, has been run by the National Aeronautics and Space Administration (NASA) for the past eight years and has provided the first statistically significant measurements of the electromagnetic interaction between lightning and aircraft. A NASA-owned F-106B airplane has been flown through thunderstorms about 1500 times at altitudes between 5,000 and 40,000 feet (1,500 to 12,000 meters). The airplane, lightning-hardened and outfitted with special instruments, was hit by lightning 714 times. The types of measurements made and the results are described.

Pitts, Felix L.↗
NASA NTRS1989

Spread Of Charge From Ion Tracks In Integrated Circuits

Single-event upsets (SEU's) propagate to adjacent cells in integrated memory circuits. Findings of experiments in lateral transport of electrical-charge carriers from ion tracks in 256K dynamic randon-access memories (DRAM's). As dimensions of integrated circuits decrease, vulnerability to SEU's increases. Understanding gained enables design of less vulnerable circuits.

Zoutendyk, John A.↗
NASA NTRS1989

Asymmetrical SRAM Cells For Radiation Tests

Features of circuits altered to increase or decrease sensitivity to radiation. State-space analysis used to analyze single-event-upset behavior of memory cell. When voltage on node a is set at one of indicated initial values Vao and then released, voltages on nodes a and b then follow indicated trajectory to final logic "one" or logic "zero" state. Ability to do this important for design of radiation-detecting integrated circuits (deliberately made more sensitive to ionizing radiation) and "radiation-hardened" integrated circuits - those intended to be relatively invulnerable to intense radiation.

Buehler, Martin G.↗
NASA NTRS1989

SEU In An Advanced Bipolar Integrated Circuit

Report summarizes investigation of single-event upsets (SEU) in bipolar integrated-circuit set of flip-flops (memory cells). Device tested made by advanced digital bipolar silicon process of Honeywell, Inc. Circuit chip contained 4 cells. Construction enabled study of effect of size on SEU behavior. Each cell externally biased so effect of bias current on SEU behavior. Results of study provides important information for optimal design of devices fabricated using buried-layer bipolar process operating in heavy-ion SEU environments. Designers use information to provide required levels of suppression of SEU in specific applications via combinations of size and/or cell-current scaling.

Zoutendyk, John A.↗
NASA NTRS1989

Internal Correction Of Errors In A DRAM

Error-correcting Hamming code built into circuit. A 256 K dynamic random-access memory (DRAM) circuit incorporates Hamming error-correcting code in its layout. Feature provides faster detection and correction of errors at less cost in amount of equipment, operating time, and software. On-chip error-correcting feature also makes new DRAM less susceptible to single-event upsets.

Zoutendyk, John A.↗
NASA NTRS1988

Interplanetary Particle Environment. Proceedings of a Conference

A workshop entitled the Interplanetary Charged Particle Environment was held at the Jet Propulsion Laboratory (JPL) on March 16 and 17, 1987. The purpose of the Workshop was to define the environment that will be seen by spacecraft operating in the 1990s. It focused on those particles that are involved in single event upset, latch-up, total dose and displacement damage in spacecraft microelectronic parts. Several problems specific to Magellan were also discussed because of the sensitivity of some electronic parts to single-event phenomena. Scientists and engineers representing over a dozen institutions took part in the meeting. The workshop consisted of two major activities, reviews of the current state of knowledge and the formation of working groups and the drafting of their reports.

Feynman, Joan↗