JANTX2N2369A transistor
Report describes effects of power and temperature overstress on National Semiconductor and Raytheon transistors. Good junction quality was maintained. Gain losses predominated. Other failures are reported.
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Analysis of long-term ionizing radiation effects in bipolar transistors
The ionizing radiation effects of electrons on bipolar transistors have been analyzed using the data base from the Voyager project. The data were subjected to statistical analysis, leading to a quantitative characterization of the product and to data on confidence limits which will be useful for circuit design purposes. These newly-developed methods may form the basis for a radiation hardness assurance system. In addition, an attempt was made to identify the causes of the large variations in the sensitivity observed on different product lines. This included a limited construction analysis and a determination of significant design and processes variables, as well as suggested remedies for improving the tolerance of the devices to radiation.
Stanley, A. G.↗
A dc model for power switching transistors suitable for computer-aided design and analysis
The proposed dc model for bipolar junction power switching transistors is based on measurements which may be made with standard laboratory equipment. Those nonlinearities which are of importance to power electronics design are emphasized. Measurements procedures are discussed in detail. A model formulation adapted for use with a computer program is presented, and a comparison between actual and computer-generated results is made.
Wilson, P. M.↗
Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation
A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.
Jhabvala, M. D.↗
High-current, fast-switching transistor development
The design, wafer-processing techniques, and various measurements which include forward safe operating area, dc characteristics, and switching times are described for a larger-diameter (33) transistor. An improved base contact for equalizing the base-emitter voltage at high currents was developed along with an improved emitter contact preform which increases the silicon area available for current conduction. The electrical performance achieved is consistent with the proposed optimum design.
Hower, P. L.↗
Power transistor switching characterization
The switching properties of power transistors are investigated. The devices studied were housed in IO-3 cases and were of an n(+)-p-n(-)-n(+) vertical dopant structure. The effects of the magnitude of the reverse-base current and temperature on the reverse-bias second breakdown characteristics are discussed. Brief discussions of device degradation due to second breakdown and of a constant voltage turn-off circuit are included. A description of a vacuum tube voltage clamp circuit which reduces clamped collector voltage overshoot is given.
Blackburn, D. L.↗
Standard Transistor Array (STAR). Volume 1, addendum 1: CAPSTAR user's guide
The cell placement techniques developed for use with the standard transistor array were incorporated in the cell arrangement program for STAR (CAPSTAR). Instructions for use of this program are given.
Cox, G. W.↗
Standard Transistor Array (STAR). Volume 1, addendum 2: CAPSTAR programmer's guide
Instructions are given for updating and maintaining the cell arrangement program for the standard transistor array (CAPSTAR).
Cox, G. W.↗
Theoretical results on the tandem junction solar cell based on its Ebers-Moll transistor model
A one-dimensional theoretical model of the tandem junction solar cell (TJC) with base resistivity greater than about 1 ohm-cm and under low level injection has been derived. This model extends a previously published conceptual model which treats the TJC as an npn transistor. The model gives theoretical expressions for each of the Ebers-Moll type currents of the illuminated TJC and allows for the calculation of the spectral response, I(sc), V(oc), FF and eta under variation of one or more of the geometrical and material parameters and 1MeV electron fluence. Results of computer calculations based on this model are presented and discussed. These results indicate that for space applications, both a high beginning of life efficiency, greater than 15% AM0, and a high radiation tolerance can be achieved only with thin (less than 50 microns) TJC's with high base resistivity (greater than 10 ohm-cm).
Goradia, C.↗
Standard Transistor Arrays
Standard Transistor Array (STAR) design system is semicustom approach to generating random-logic integrated MOS digital circuits. Primary program in STAR system is CAPSTAR, STAR Cell Arrangement Program. CAPSTAR is augmented by automatic routining program, Display program and library of logic cells.
Cox, G. W.↗
Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters
Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.
Wilson, P. M.↗
X-Ray Inspection of Transistors
Component holder speeds examination of matched pairs. Transistors are oriented for two perpendicular x-ray views. Second view obtained by simply flipping block around corner near components, while corner remains in contact with film. Procedure allows inspection of up to 50 pairs - two views of each pair - on single x-ray film in same time previously required for 1 unmounted pair.
Hubbard, W. P.↗
Improved transistorized AC motor controller for battery powered urban electric passenger vehicles
An ac motor controller for an induction motor electric vehicle drive system was designed, fabricated, tested, evaluated, and cost analyzed. A vehicle performance analysis was done to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of ac motor and ac controller requirements. The power inverter is a three-phase bridge using power Darlington transistors. The induction motor was optimized for use with an inverter power source. The drive system has a constant torque output to base motor speed and a constant horsepower output to maximum speed. A gear shifting transmission is not required. The ac controller was scaled from the base 20 hp (41 hp peak) at 108 volts dec to an expanded horsepower and battery voltage range. Motor reversal was accomplished by electronic reversal of the inverter phase sequence. The ac controller can also be used as a boost chopper battery charger. The drive system was tested on a dynamometer and results are presented. The current-controlled pulse width modulation control scheme yielded improved motor current waveforms. The ac controller favors a higher system voltage.
Peak, S. C.↗
A comparison of radiation damage in transistors from cobalt-60 gamma rays and 2.2 MeV electrons
The total ionizing dose response of ten bipolar transistor types has been measured using Co-60 gamma rays and 2.2 MeV electrons from exposure levels of 750, 1500, and 3000 Gy(Si). Gain measurements were made for a range of collector-emitter voltages and collector currents.
Nichols, D. K.↗
High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy
The maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K-band GaAs power field-effect transistors (FETs) fabricated on the MBE wafers. An output power of 710 mW with 4.5-dB gain and 17.7 percent power-added efficiency was achieved at 21 GHz with a 1.26-mm gate width pi-gate device. A similar device with a 0.56-mm gate width produced an output power of 320 mW with 5.0-dB gain and 26.6 percent power-added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FETs operated in the K-band frequency range.
Saunier, P.↗
Improved transistor-controlled and commutated brushless DC motors for electric vehicle propulsion
The development, design, construction, and testing processes of two electronically (transistor) controlled and commutated permanent magnet brushless dc machine systems, for propulsion of electric vehicles are detailed. One machine system was designed and constructed using samarium cobalt for permanent magnets, which supply the rotor (field) excitation. Meanwhile, the other machine system was designed and constructed with strontium ferrite permanent magnets as the source of rotor (field) excitation. These machine systems were designed for continuous rated power output of 15 hp (11.2 kw), and a peak one minute rated power output of 35 hp (26.1 kw). Both power ratings are for a rated voltage of 115 volts dc, assuming a voltage drop in the source (battery) of about 5 volts. That is, an internal source voltage of 120 volts dc. Machine-power conditioner system computer-aided simulations were used extensively in the design process. These simulations relied heavily on the magnetic field analysis in these machines using the method of finite elements, as well as methods of modeling of the machine power conditioner system dynamic interaction. These simulation processes are detailed. Testing revealed that typical machine system efficiencies at 15 hp (11.2 kw) were about 88% and 84% for the samarium cobalt and strontium ferrite based machine systems, respectively. Both systems met the peak one minute rating of 35 hp.
Demerdash, N. A.↗
Electron lithography STAR design guidelines. Part 3: The mosaic transistor array applied to custom microprocessors. Part 4: Stores logic arrays, SLAs implemented with clocked CMOS
The Mosaic Transistor Array is an extension of the STAR system developed by NASA which has dedicated field cells designed to be specifically used in semicustom microprocessor applications. The Sandia radiation hard bulk CMOS process is utilized in order to satisfy the requirements of space flights. A design philosophy is developed which utilizes the strengths and recognizes the weaknesses of the Sandia process. A style of circuitry is developed which incorporates the low power and high drive capability of CMOS. In addition the density achieved is better than that for classic CMOS, although not as good as for NMOS. The basic logic functions for a data path are designed with compatible interface to the STAR grid system. In this manner either random logic or PLA type structures can be utilized for the control logic.
Trotter, J. D.↗
High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
Pseudomorphic In0.15Ga0.85As/A10.15Ga0.85As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated. dc transconductance in these strained-layer structures of 270 mS/mm was measured for 1-micron gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well.
Ketterson, A.↗