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The operation of an eight-element monolithic array of GaAlAs electroabsorption modulators has been demonstrated. The single-mode waveguide modulators are implemented in a reverse-biased p-pi-n heterojunction configuration, with center-to-center spacing of 9 microns between adjacent channels. This device may be useful for intensity modulation in high (spatial) resolution applications.
A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.
Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate.
Results are presented on full-scale performance testing of vacuum-regenerable, carbon based sorbent monoliths for trace-contaminant (TC) removal integrated with the Rapid-Cycle Amine (RCA) swing bed for use in the Portable Life Support System (PLSS) during Extravehicular Activities (EVAs). The current state-of-art in TC-control technology involves the use of a packed bed of acid-impregnated granular charcoal, which is difficult to regenerate. The carbon-based sorbent under development in this project can be regenerated by exposure to vacuum at room temperature. Data on cyclic sorption-desorption of ammonia, which is a major TC of concern, were collected in a simulated PLSS ventilation loop which involved the RCA placed upstream of the Trace Contaminant Control System (TCCS). Results of testing involving pressure-swing operation of the integrated TCCS/RCA system indicate ammonia-removal efficiency exceeding 80% throughout multiple sorption-desorption cycles. This paper presents an overview of the TCCS research, the favorable results obtained, and provides insight into future work needed to further the technology development.
Integrated circuit arrays for solid state inverters, noting Johnson counter and packaging
Computerized design of photographic masks for integrated circuit fabrication
The degree of phase locking between the individual laser apertures is the major issue in phase-locked laser arrays. A description is presented of a series of experiments in which the mutual coherence of two laser apertures is characterized by measuring the visibility of the far-field interference fringes. Attention is given to an approach which makes it possible to control continuously the degree of coherence by means of a separate contact configuration. An investigation was conducted of the far-field radiation patterns of pairs of lasers obtained under various conditions. The results of the present study demonstrate the feasibility of controlling the mutual phase locking between semiconductor lasers by varying the gain distribution between their pumped stripes.
Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.
The analysis and modeling of superconducting planar transmission lines were performed. Theoretically, the highest possible Q values of superconducting microstrip line was calculated and, as a result, it provided the Q value that the experiment can aim for. As an effort to search for a proper superconducting transmission line structure, the superconducting microstrip line and coplanar waveguide were compared in terms of loss characteristics and their design aspects. Also, the research was expanded to a superconducting coplanar waveguide family in the microwave packaging environment. Theoretically, it was pointed out that the substrate loss is critical in the superconducting transmission line structures.
Prototype ICs for the Solar Heliospheric Observatory's Multi-Anode Microchannel Array (MAMA) have been developed; these ICs' charge-amplifier and comparator components were then tested with a view to pulse response and noise performance. All model performance predictions have been exceeded. Electrostatic discharge protection has been included on all IC connections; device operation over temperature has been consistent with model predictions.
The research effort was continued to design and characterize superconducting transmission line structures. The research during this period was concentrated on the implementation of a superconductor into coplanar waveguide structures. First, the superconducting coplanar waveguide was examined, and compared with a superconducting microstrip line in terms of loss characteristics and their design aspects. Then, the research was carried on the design and characterization of the coplanar waveguide family in the packaging environment. The transition between the coaxial line to the conductor backed coplanar waveguide was also designed for the measurement of the superconducting conductor backed coplanar waveguide.
With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.
This paper presents a modified Finite-Difference Time-Domain (FDTD) technique using a generalized conformed orthogonal grid. The use of the Conformed Orthogonal Grid, Finite Difference Time Domain (GFDTD) enables the designer to match all the circuit dimensions, hence eliminating a major source o error in the analysis.
In this paper, we will present the design and fabrication of an integrated semiconductor laser/modulator using the identical active layer approach on InGaAsP/InP material.
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A newly fabricated Monolithic InGaAs Active Pixel Image Sensor is presented, and its readout characteristics are described.
No abstract provided
Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.