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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3D NAND Flash Memory

Single-event upsets are observed in a 72-layer 3D NAND flash memory operated in single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by three-dimensional data analysis and the energy dependence of device sensitive cross-section. Heavy ion data is also presented for comparison.

Direct ionization↗
DOE OSTI2025

Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation

Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-D nand devices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. Here, this effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.

Breeding, Matthew Luel [Sandia National Laboratori↗
NASA NTRS2012

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Irom, Farokh↗
NASA NTRS2009

Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories

Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.

nonvolatile memory↗
NASA NTRS2017

Effect of Radiation and Endurance on Pulsed Programming of Commercial NAND Flash Memory

Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results.

Narasimham, Avyaya Jayanthi↗
NASA NTRS2016

Fitting a Model to Floating Gate Prompt Charge Loss Test Data for the Samsung 8 Gb SLC NAND Flash Memory

A recent model provides risk estimates for the deprogramming, of initially programmed floating gates, via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.

Edmonds, L. D.↗
NASA NTRS2020

Single-Event Testing of the Texas Instruments SNV54LVC00AW Quadruple 2-Input Positive-NAND Gates

The purpose of this testing was to characterize the Texas Instruments SNV54LVC00AW for single-event latchup (SEL) in support of a NASA GSFC flight program. The SNV54LVC00A quadruple 2-input positive-NAND gate. These devices were tested at the Berkeley Accelerator Space Effects (BASE) Facility at Lawrence Berkeley National Laboratory (LBNL) where they were irradiated with the 10 MeV/amu heavy ion cocktail.

Campola, Michael↗
NASA NTRS2012

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.↗