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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2016

Resources for Radiation Test Data

The performance of electronic devices in a space radiation environment is often limited by susceptibility to single-event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Interpreting the results of SEE, TID, and DD testing of complex devices is quite difficult given the rapidly changing nature of both technology and the related radiation issues. Radiation testing is performed to establish the sensitivities of candidate spacecraft electronics to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transients (SETs), TID, and DD effects. Knowing where to search for these test results is a valuable resource for the aerospace engineer or spacecraft design engineer. This poster is intended to be a resource tool for finding radiation test data.

Single Event Effects (SEE)↗
NASA NTRS2018

Single Event Effect Testing of the Analog Devices ADXL354 3-Axis MEMS Accelerometer

The Analog Devices ADXL354 3-AXIS MEMS accelerometer was tested for single-event effects, both destructive and non-destructive. The device was characterized for single-event upset (SEU) sensitivity and evaluated for any possibility of single-event latchup (SEL), single-event dielectric rupture (SEDR) and single-event functional interrupts (SEFI). Single-event transient (SET) response was also monitored.

Single-Event Effect (SEE)↗
NASA NTRS2022

Single-Event Effects Test Report Texas Instruments, OPA842 Low-Noise Operational Amplifier

Testing was done to characterize the Texas Instruments Operational Amplifiers OPA842 single event effects (SEE) response. The primary SEE concerns for this device are single event latchup (SEL) and single event transients (SETs). Testing focused on determining susceptibility to SEL and characterizing the SET response. Testing occurred on November 11, 2022.

Kaitlyn L Ryder↗
NASA NTRS2021

SEE Test Report for Texas Instruments LMV7219 7 ns, 2.7 V to 5 V Comparator with Rail-to-Rail Output

The primary purpose of this testing is to characterize the Texas Instruments LMV7219 comparator for single-event latchup (SEL) susceptibility. These data will be used to assess the Single-Event Latchup (SEL) risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the comparator to single-event transients (SET) and other nondestructive Single-Event Effects (SEE).

Raymond Ladbury↗
NASA NTRS2021

SEE Test Report for Arizona Microtek AZ88923 High Speed Limiting Post Amplifier

The primary purpose of this testing is to characterize the Texas Instruments AZ88923 post amplifier for susceptibility to single-event latchup (SEL) and other destructive Single-Event Effects (SEE). These data will be used to assess the destructive SEE risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the post amplifier to single-event transients (SET) and other nondestructive SEE. In particular, the loss-of-signal feature could give rise to some significant anomalies. However, it is not used on OLA.

Raymond Ladbury↗
NASA NTRS2006

Texas Instruments-Digital Signal Processor(TI-DSP)SMJ320F20 SEL Testing

This viewgraph presentation reviews the testing of the Texas Instrument Digital Signal Processor(TI-DSP)SMJ320F20. Tests were performed to screen for susceptibility to Single Event Latchup (SEL) and measure sensitivity as a function of Linear Energy Transfer (LET) for an application specific test setup. The Heavy Ion Testing of two TI-DSP SMJ320F240 devices experienced Single Event Latchup (SEL) conditions at an LET of 1.8 MeV/(mg/square cm) The devices were exposed from a fluence of 1.76 x l0(exp 3) to 5.00 x 10(exp 6) particles/square cm of the Neon, Argon and Krypton ion beams. For DI(sub DD) an average latchup current occurred at about 700mA, which is a magnitude of 10 over the nominal current of 700mA.

Sanders, Anthony B.↗
NASA NTRS2011

Single-Event Effect (SEE) Survey of Advanced Reconfigurable Field Programmable Gate Arrays: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

The NEPP Reconfigurable Field-Programmable Gate Array (FPGA) task has been charged to evaluate reconfigurable FPGA technologies for use in space. Under this task, the Xilinx single-event-immune, reconfigurable FPGA (SIRF) XQR5VFX130 device was evaluated for SEE. Additionally, the Altera Stratix-IV and SiliconBlue iCE65 were screened for single-event latchup (SEL).

Xilinx Single-Event Effects (SEE) Test Consortium↗
NASA NTRS2004

Virtex-II Pro SEE Test Methods and Results

The Xilinx Virtex-II Pro is a platform FPGA that embeds multiple microprocessors within the fabric of an SRAM-based reprogrammable FPGA. The variety and quantity of resources provided by this family of devices make them very attractive for spaceflight applications. However, these devices will be susceptible to single event effects (SEE), which must be mitigated. To use the Virtex-II Pro reliably in space applications, these devices must first be tested to determine if they are susceptible to single event latchup (SEL), the degree to which they are susceptible to single event upsets (SEU) and single event transients (SET), and how these effects are manifested in the device. With this information, mitigations schemes can be developed and tested that address the specific susceptiblities of these devices. This initial SEE test uses a commercial off the shelf Virtex-II Pro evaluation board, with a single processor XC2VP7 FPGA. The FPGA on this board is an acid etched device, which can be partially covered with a shield. The shield covers a portion of the logic, routing, and memory resources along with some of the RocketIO transceivers. The processor, along with a large portion of logic, routing, memory, and transceivers are left exposed. This test will be performed at the Cyclotron Laboratories at Texas A&M University and Michigan State University using ions of varying energy levels and fluencies.

Petrick, David↗
NASA NTRS2017

An Improved SEL Test of the ADV212 Video Codec

Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.

Single-event effect (SEE); microelectronic devices↗
NASA NTRS2015

Heavy Ion Test Results of the Vishay DG403DY-E3 Analog Switch

This study was undertaken to determine the Single Event Latchup (SEL) susceptibility of the Vishay DG403DY-E3 (Analog Switch). The device was under a biased and switching configuration during irradiation and continuously monitored for destructive events. The parts were tested at the Lawrence Berkeley National Laboratory 88 inch cyclotron facility

Single Event Latchup (SEL)↗
NASA NTRS2021

Single-Event Effect Test Report Analog Devices LTC1604AIG#90117 ADC

This study is to characterize the destructive single-event latchup (SEL) susceptibility of the LTC1604AIG#90117 (LTC1604) analog/digital converter (ADC). The device was monitored for SEL current events on the power supplies during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. Testing was performed on September 11, 2021.

single-event latchup (SEL)↗
NASA NTRS2021

SEE Test Report for Texas Instruments TLV5618 2.7-V to 5.5-V Low-Power Dual 12-Bit Digital-to-Analog Converter with Power Down

The primary purpose of this testing was to characterize the Texas Instruments TLV5618 12-bit digital-to-analog converter (DAC) for single-event latchup (SEL) susceptibility. These data will be used to assess the SEL risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the DAC to single-event transients (SET), single-event upsets (SEU), and other nondestructive SEE.

Raymond Ladbury↗
NASA NTRS1996

The Single Event Effect Characteristics of the 486-DX4 Microprocessor

This research describes the development of an experimental radiation testing environment to investigate the single event effect (SEE) susceptibility of the 486-DX4 microprocessor. SEE effects are caused by radiation particles that disrupt the logic state of an operating semiconductor, and include single event upsets (SEU) and single event latchup (SEL). The relevance of this work can be applied directly to digital devices that are used in spaceflight computer systems. The 486-DX4 is a powerful commercial microprocessor that is currently under consideration for use in several spaceflight systems. As part of its selection process, it must be rigorously tested to determine its overall reliability in the space environment, including its radiation susceptibility. The goal of this research is to experimentally test and characterize the single event effects of the 486-DX4 microprocessor using a cyclotron facility as the fault-injection source. The test philosophy is to focus on the "operational susceptibility," by executing real software and monitoring for errors while the device is under irradiation. This research encompasses both experimental and analytical techniques, and yields a characterization of the 486-DX4's behavior for different operating modes. Additionally, the test methodology can accommodate a wide range of digital devices, such as microprocessors, microcontrollers, ASICS, and memory modules, for future testing. The goals were achieved by testing with three heavy-ion species to provide different linear energy transfer rates, and a total of six microprocessor parts were tested from two different vendors. A consistent set of error modes were identified that indicate the manner in which the errors were detected in the processor. The upset cross-section curves were calculated for each error mode, and the SEU threshold and saturation levels were identified for each processor. Results show a distinct difference in the upset rate for different configurations of the on-chip cache, as well as proving that one vendor is superior to the other in terms of latchup susceptibility. Results from this testing were also used to provide a mean-time-between-failure estimate of the 486-DX4 operating in the radiation environment for the International Space Station.

Kouba, Coy↗
NASA NTRSDate not supplied

To the Die Smartly: Heavy Ion Testing of PEMs on COTS Boards Through the Plastic

Seven commercial off the shelf (COTS) boards containing electronic devices (all in plastic packages, PEMS), under consideration for use in a spacecraft subsystem, were exposed to beams of very high energy ions at the National Superconducting Cyclotron Laboratory (MSU). The ion energies were high enough that an entire board could be exposed in air, and it could still penetrate through the plastic and reach the silicon die. A total of about 300 runs were made, and for each, the LET of the ion entering the silicon die had to be determined, based on the thickness of the plastic lid and the thickness of overlaying materials (e.g., aluminum degraders). Single event latchup (SEL) and functional interrupt (SEFI) were determined during each run, the SEFI by means of simple programs being continuously written to and read from the boards to monitor functionality, while each part was being exposed to the heavy ions.

Wert, J. L.↗