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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This study was undertaken to determine the destructive single event effect and degradation susceptibility of the 80SCL060SCS Schottky diode. The device was monitored for destructive events and degradation in the reverse bias current during exposure to a heavy ion beam at Texas A&M University's K500 Cyclotron.
This study is to determine the destructive single event effect susceptibility of the Analog Devices ADG201 quad SPST switch. The device under tested (DUT) was monitored for destructive events by exposing it to a heavy ion beam at the Texas A&M University’s (TAMU) K500 Cyclotron.
The purpose of this testing was to examine the potential for destructive single event effects (SEE) in Broadcom’s ACPL-785E optocoupler in support of a NASA GSFC flight program. SEE testing was conducted NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory where devices with unmodified packaging were irradiated with high energy ions that have sufficient range to pass through the packaging of the device.
Destructive SEE pose serious challenges for the reliable use of COTS devices in space systems. We used system-level modeling to determine SEL rates that would likely compromise system reliability, resilience and capabilities. We then assembled a representative dataset of COTS CMOS parts and used nonparametric statistical techniques to assess the threat posed to redundant systems by destructive SEE.
Destructive SEE pose serious challenges for the reliable use of COTS devices in space systems. We use system-level modeling and non-parametric statistics to assess the threat posed to redundant systems by destructive SEE.
This paper presents the results of reliability life testing performed on commercial electronic devices that experienced non-destructive single-event latch-up (SEL) during heavy-ion testing.
Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.
The purpose of this test was to characterize the single-event effects (SEE) susceptibility of the Texas Instrument (TI) DRV8881 2.5A Dual H-Bridge Motor Driver. The device’s output was monitored for changes during exposure to heavy-ions at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. The main goal of testing was to test for destructive SEEs. Nondestructive SEEs were recorded during testing but not fully characterized. Testing was performed on November 9th and 11th, 2022.
This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.