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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Electron and proton damage coefficients in low-resistivity silicon

The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.

Srour, J. R.↗
NASA NTRS1975

Damage coefficients in low resistivity silicon

Electron and proton damage coefficients are determined for low resistivity silicon based on minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. Irradiations were performed on bulk samples and cells fabricated from four types of boron-doped 0.1 ohm-cm silicon ingots, including the four possible combinations of high and low oxygen content and high and low dislocation density. Measurements were also made on higher resistivity boron-doped bulk samples and solar cells. Major observations and conclusions from the investigation are discussed.

Srour, J. R.↗
NASA NTRS1981

Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation

High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.

Weinberg, I.↗
NASA NTRS1987

Resistive synaptic interconnects for electronic neural networks

The use of the alpha-Ge(1-x):Al(x) and alpha-Ge(1-x):Cu(x) alloys and Pt/Al2O3 cermet thin films as resistive interconnects for binary synaptic memory arrays is evaluated. The fabrication of the 10-20 microns long, 10 microns wide, and 0.1 micron thick interconnects from the alloys and cermet is described. The current-voltage and switching characteristics of the as-deposited films and the patterned test structure are studied. The resistivity, uniformity, stability, and compatibility of the interconnects are examined. It is observed that alpha-Ge(1-x):Cu(x) alloys have a wide resistivity range and low temperature coefficients of resistance; however, their long-term stability is limited due to their low crystallization temperature. It is detected that the alpha-Ge(1-x):Al(x) alloys have higher crystallization temperatures and their resistivity is not greatly affected by large changes in metal content. The Pt/Al2O3 samples display excellent stability, easy fabrication, and control of resistivity with metal content.

Lamb, J. L.↗
NASA NTRS1987

Effect of 1.0 MeV electron irradiation on shunt resistance in Si-MINP solar cells

Shunt resistance from 100 K to 400 K is compared for diffused and ion implanted cells before and after irradiation. R sub sh decreases from greater than 10 to the 7th power omega-square cm for T less than 250 K to 10 to the 4th power omega-square cm at 400 K for non-irradiated diffused cells. Electron irradiation causes a more rapid decrease in R sub sh for T greater than 250 K. Ion implanted cells exhibit a similar trend except that R sub sh is significantly less for T less than 250 K and is more sensitive to irradiation at these low temperatures. The mechanism of R sub sh appears to be a combination of multistep tunneling and trapping - detrapping in the defect states of the semiconductor. Radiation serves to increase the density of these states to decrease R sub sh.

Anderson, Wayne A.↗
NASA NTRS1989

Solid-state non-volatile electronically programmable reversible variable resistance device

A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) connected by a layer (18) of material, which changes from an insulator to a conductor upon the injection of ions, covered by a layer (22) of material with insulating properties which permit the passage of ions, overlaid by an ion donor material (20). The ion donor material is overlaid by an insulating layer (24) upon which is deposited a control gate (26) located above the contacts. In a preferred embodiment, the variable resistance material comprises WO.sub.3, the ion donor layer comprises Cr.sub.2 O.sub.3, and the layers sandwiching the ion donor layer comprise silicon monoxide. When a voltage is applied to the gate, the resistance between the electrode contacts changes, decreasing with positive voltage and increasing with negative voltage.

Ramesham, Rajeshuni↗
NASA NTRS1987

Plasma transport in the auroral return current region

The classical and anomalous transport properties of a multifluid plasma consisting of H(+), O(+), and electron populations in the presence of auroral field-aligned return currents are investigated, using a multimoment fluid model with anomalous transport coefficients. The macroscopic effects of the electrostatic ion cyclotron (EIC) instability and of an EIC-related anomalous resistivity mechanism which heats the electrons are included in the present version of the model. The responses of the outflowing polar wind plasma to the application of current, with and without instabilities, are exhibited. The simulations show that the electron drift velocity corresponding to a return current of 0.65 micro-A/sq m is above the threshold for EIC waves. Downward electron heat flow competes with upward convection and adiabatic effects to determine the direction of the electron temperature anisotropy. Resistive electron heating lowers the critical drift velocity for marginal EIC stability and leads to enhanced ion heating.

Ganguli, Supriya B.↗
NASA NTRS1987

Electronically Controlled Resistor Bank

Resistance quickly varied in small steps over wide range. Device with no moving parts provides variable electrical resistance. Used with analog or digital circuity to provide electronic selection of large number of resistance values for testing, simulation, control, or other purposes. Nearest electromechanical equivalent of all-electronic device is potentiometer driven by servomotor.

Ross, Walter L.↗
NASA NTRS1993

Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

Mueller, Robert L.↗
NASA NTRS1964

Thermal testing of the Ranger Block III SPACECRAFT in the JPL 25 ft. space simulator

In January, 1964, a test program was begun on the thermal design of the Ranger Block III Spacecraft. The tests were performed i n the newly operational JPL 25' Space Simulator over a period of 6 months . The objectives of these tests were two-fold: A. To evaluate the 25' Space Simulator as a facility for proving the thermal design of spacecrafts, and B. To verify .the thermal design of the Ranger Block III spacecraft. These two objectives are complimentary in the test series performed and are difficult to separate into distinct categories. An important part of the first objective was to learn what type of test preparation, instrumentation, and analysis was required for the meaningful evaluation of test data from the 25' Space Simulator tests. Although some experience had been gained in testing of components and incomplete spacecrafts in smaller solar simulation chambers during the early part of the Ranger program, we knew little about testing of a complete spacecraft in the 25' Space Simulator when this test program began. Test analysis requires that the energy absorbed by various spacecraft components be known. This requires a knowledge of the area of solar absorption or sunlit area, the solar energy flux density on the area, and the effective absorptance of that area. Most of the problems encountered were associated with the determination of the last two quantities since the sunlit area may be obtained directly by inspection of spacecraft surfaces. This paper will present a discussion of our experiences during the Ranger Block III thermal test series on the Thermal Test Model (TCM). The TCM was thermally equivalent to the flight type Ranger spacecraft except for the lack of an antenna dish and solar panels. Flight type structural hardware was used with surface finishes equivalent to those of the flight spacecraft. Aluminum blocks simulated the spacecraft electronics thermal masses with resistance heaters simulating the electronic power dissipation. The discussion will be presented in a semi-chronological order and will be divided into the following areas: 1. Determination of solar simulation flux density on spacecraft surfaces. 2. Problems related to decollimation of the solar simulation source. 3. Determination of effective absorptance in the solar simulation spectrum.

SPACE SIMULATOR↗
NASA NTRS1977

Plasma polymerized coating for polycarbonate - Single layer, abrasion resistant, and antireflection

Plasma polymerized vinyltrimethoxy silane films were deposited on transparent polycarbonate substrates. The adherent, clear films protected the substrates from abrasion and also served as antireflection coatings. Posttreatment of the vinyltrimethoxy silane films in an oxygen glow discharge further improved the abrasion resistance. ESCA (electron spectroscopy for chemical analysis) and IR transmission spectra of some films were recorded, and an elemental analysis of the films was obtained.

Wydeven, T.↗
NASA NTRS1979

Shallow-homojunction GaAs solar cells

Single-crystal GaAs shallow-homojunction solar cells on GaAs or Ge substrates, without Ga sub 1-x Al sub x As window layers, that have conversion efficiencies exceeding 20% at AM1 (17% at AMO). Using a simple theoretical model, good fits were obtained between computer calculations and experimental data for external quantum efficiency and conversion efficiency of cells with different values of n+ layer thickness. The calculations not only yield values for material properties of the GaAs layers composing the cells but will also permit the optimization of cell designs for space and terrestrial applications. Preliminary measurements indicate that the shallow-homojunction cells are resistant to electron irradiation. In the best test so far, bombardment with 1 x 10 to the 16th power/sq cm fluence of 1 MeV electrons reduced the short-circuit current by only about 6%.

Fan, J. C. C.↗
NASA NTRS1978

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Walker, G. H.↗
NASA NTRS1982

Ion distribution effects of turbulence on a kinetic auroral arc model

An inverted-V auroral arc structure plasma-kinetic model is extended to phenomenologically include the effects of electrostatic turbulence, with k-parallel/k-perpendicular being much less than unity. It is shown that, unless plasma sheet ions are very much more energetic than the electrons, anomalous resistivity is not a large contributor to parallel electrostatic potential drops, since the support of the observed potential drop requires a greater dissipation of energy than can be provided by the plasma sheet. Wave turbulence can, however, be present, with the ion cyclotron turbulence levels suggested by the ion resonance broadening saturation mechanism of Dum and Dupree (1970) being comparable to those observed on auroral field lines. The diffusion coefficient and net growth rate are much smaller than estimates based solely on local plasma properties.

Cornwall, J. M.↗
NASA NTRS1983

Polyaryl ethers and related polysiloxane copolymer molecular coatings preparation and radiation degrdation

Poly(arylene ether sulfones) comprise a class of materials known as engineering thermoplastics which have a variety of important applications. These polymers are tough, rigid materials with good mechanical properties over a wide temperature range, and they are processed by conventional methods into products typically having excellent hydrolytic, thermal, oxidative and dimensional stability. Wholly aromatic random copolymers of hydroquinone and biphenol with 4.4 prime dichlorodiphenyl sulfone were synthesized via mechanical nucleophilic displacement. Their structures were characterized and mechanical behavior studied. These tough, ductile copolymers show excellent radiation resistance to electron beam treatment and retain much of the mechanical properties up to at least 700 Mrads under argon.

Mcgrath, J. E.↗
NASA NTRS1982

Space solar cell technology development - A perspective

The developmental history of photovoltaics is examined as a basis for predicting further advances to the year 2000. Transistor technology was the precursor of solar cell development. Terrestrial cells were modified for space through changes in geometry and size, as well as the use of Ag-Ti contacts and manufacture of a p-type base. The violet cell was produced for Comsat, and involved shallow junctions, new contacts, and an enhanced antireflection coating for better radiation tolerance. The driving force was the desire by private companies to reduce cost and weight for commercial satellite power supplies. Liquid phase epitaxial (LPE) GaAs cells are the latest advancement, having a 4 sq cm area and increased efficiency. GaAs cells are expected to be flight ready in the 1980s. Testing is still necessary to verify production techniques and the resistance to electron and photon damage. Research will continue in CVD cell technology, new panel technology, and ultrathin Si cells.

Scott-Monck, J.↗