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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Studies of liquid floating zones on SL-IV, the third Skylab mission

The behavior of liquid floating zones in a zero-gravity environment was studied by Dr. E. Gibson on SL-4. These experiments were designed from the results of previous work on floating zones in a simulated zero-gravity model. Molten floating zones are used on earth for the crystal growth and zone refining of reactive materials. The Skylab studies give some insight into the problems associated with the development of the technique for the future space processing of materials. Preliminary results are presented on the stability of the liquid zone surface under static, rotational and vibrational conditions without gravitational constraints.

Carruthers, J. R.↗
NASA NTRS1980

Science Requirements Working Group (SRWG) in float zone materials processing in space: A review

A summary and history of the Float Zone Working Group was presented. The functions of this working group are to: provide an informal forum of scientific investigators for the exchange of information and ideas in the approach of the solution of common problems in float zone processing, help plan the research and development necessary to place the float zone process on a firm base of scientific understanding and advanced technological development, establish the science requirements for the AFZES for Spacelab, and seek ways to maximize the advantages of the space environment in the pursuit of these goals.

Fowle, A. A.↗
NASA NTRS1984

Toroidal Ellipsoid Float-Zone Heater

Furnace heats and melts circumferential ring of material ("Float Zone") on round bar. In float-zone processing, bar pulled through furnace so zone travels along bar.

Davidson, R. B.↗
NASA NTRS1983

The control of float zone interfaces by the use of selected boundary conditions

The main goal of the float zone crystal growth project of NASA's Materials Processing in Space Program is to thoroughly understand the molten zone/freezing crystal system and all the mechanisms that govern this system. The surface boundary conditions required to give flat float zone solid melt interfaces were studied and computed. The results provide float zone furnace designers with better methods for controlling solid melt interface shapes and for computing thermal profiles and gradients. Documentation and a user's guide were provided for the computer software.

Foster, L. M.↗
NASA NTRS1982

Bread board float zone experiment system for high purity silicon

A breadboard float zone experimental system has been established at Westech Systems for use by NASA in the float zone experimental area. A used zoner of suitable size and flexibility was acquired and installed with the necessary utilities. Repairs, alignments and modifications were made to provide for dislocation free zoning of silicon. The zoner is capable of studying process parameters used in growing silicon in gravity and is flexible to allow trying of new features that will test concepts of zoning in microgravity. Characterizing the state of the art molten zones of a growing silicon crystal will establish the data base against which improvements of zoning in gravity or growing in microgravity can be compared. 25 mm diameter was chosen as the reference size, since growth in microgravity will be at that diameter or smaller for about the next 6 years. Dislocation free crystals were growtn in the 100 and 111 orientations, using a wide set of growth conditions. The zone shape at one set of conditions was measured, by simultaneously aluminum doping and freezing the zone, lengthwise slabbing and delineating by etching. The whole set of crystals, grown under various conditions, were slabbed, polished and striation etched, revealing the growth interface shape and the periodic and aperiodic natures of the striations.

Kern, E. L.↗
NASA NTRS1989

Steady-state thermal-solutal diffusion in a float zone

A model for a float zone in a thin vertical sheet is used to study the formation of the zone configuration for both pure and binary systems of Si and GeGa. Equations describing the steady two-dimensional diffusion of solute in the melt and diffusion of heat in the feed material and the product crystal are presented. The material properties, asymptotic solutions for the temperature and concentration profiles, and melting, solidifying, and melt/gas interfacial shapes are determined in the small aspect ratio limit.

Young, G. W.↗
NASA NTRS1980

Future float zone development in industry

The present industrial requirements for float zone silicon are summarized. Developments desired by the industry in the future are reported. The five most significant problems faced today by the float zone crystal growth method in industry are discussed. They are economic, large diameter, resistivity uniformity, control of carbon, and swirl defects.

Sandfort, R. M.↗
NASA NTRS1980

Float zone experiments

The objectives of this work are: to determine if surface tension-driven convection in float zone experiments may be controlled by means of surface films; and if convection can be controlled, determine whether homogeneous solute distributions will be achieved in float zone solidification and whether accurate measurements of liquid diffusion coefficients may be obtained from float zone solidification experiments. Sn was chosen as a model material because it is a group IV element, chemically similar to Si and Ge and its low melting point and low vapor pressure allow Auger spectroscopy to be employed with liquid samples.

Verhoeven, J.↗
NASA NTRS1986

Convective effects in float-zone and Czochralski melts

The hydrodynamics of crystal-growth melts is a relatively new research area. Numerical modeling of these processes is necessary. The work discussed herein is in two parts: numerical simulations of the flow in a Czochralski melt, and also of that in a float zone. In addition, for the float-zone case, energy stability theory will be used to determine stability bounds for the onset of oscillatory thermo-capillary flow. Convective effects in crystal-growth melts arise from a variety of mechanisms. Temperature gradients both in the direction of gravity and normal to it give rise to convection due to buoyancy effects. Rotation of the crucible and/or crystal causes a forced convection which may augment or oppose the buoyancy-driven flow. Finally, thermo-capillary forces (due to the variation of surface tension with temperature) drive surface motions which in turn generate convection in the bulk fluid. All of these mechanisms are present in either Czochralski or float-zone growth. The objective of the Czochralski modeling is to develop an accurate numerical simulation of the flow in a Czochralski silicon melt and to investigate the effects of various parameters on the flow properties. Like some earlier investigations, the intent is to simulate the effects of buoyancy, forced and thermo-capillary convection, including unsteady effects. Unlike earlier work, the aim is to include the effects of a variable free surface and freezing interface and, possibly incorporate nonaxisymmetric effects.

Neitzel, G. P.↗
NASA NTRS1985

The Control of Float Zone Interfaces by the Use of Selected Boundary Conditions

Since the float zone process involves two solid-melt interfaces, possible gas interfaces, heat and mass transfers, various driving forces and complex heating sources, an analysis of the entire process would be very complex. For an initial investigation, a more feasible approach is to examine each component of the process separately. The three principal components are: (1) the shapes of the melt and solid-melt interfaces, (2) the heat and mass transfers, and (3) the heating and cooling sources. This study combined facets of all three components. The purpose of this effort was to study and compute the surface boundary conditions required to give flat (float zone) FZ solid-melt interfaces. This study was undertaken in two phases. The first phase was to investigate the solid zones surface boundary conditions required for flat solid-melt interfaces when given the melt zone surface boundary conditions. The second phase complemented the first and was to investigate the melt zone surface boundary conditions required for flat solid-melt interfaces if given the solid zones surface boundary conditions. Dual integral transform methods were used in both phases; in addition, the use of various numerical methods for differential equations and linear systems of equations were required.

Foster, L. M.↗
NASA NTRS1981

Modeling of the float zone process

The interaction of heat, mass, and momentum transport in the floating zone method for growing single crystals from the melt is examined. Methods for detailed numerical simulation of the transport phenomena in a floating zone are developed. Results of the calculations are combined with experiments to determine the effects of solidification induced, surface tension driven, and buoyancy driven convection in establishing dopant redistribution in the melt and the roles of heat transfer in crystal and melt and melt/solid interface shape in determining crystal quality. State of the art finite element techniques were developed for calculating the influence of natural convection in the melt on the shape of a melt/crystal interface and dopant segregation in the crystal. These techniques are demonstrated for solidification by the Bridgman technique. Numerical techniques are developed that calculate the shapes of both the melt/solid and melt/gas interfaces simultaneously with the thermal fields in melt and solid. Models for the fluid flows due to the rotation of the feed and crystal rods are completed and the effects of these flows on dopant segregation are studied, especially in the case of zones longer than can be achieved on Earth.

Brown, R. A.↗
NASA NTRS1984

Float zone experiments in space

The molten zone/freezing crystal interface system and all the mechanisms were examined. If Marangoni convection produces oscillatory flows in the float zone of semiconductor materials, such as silicon, then it is unlikely that superior quality crystals can be grown in space using this process. The major goals were: (1) to determine the conditions for the onset of Marangoni flows in molten tin, a model system for low Prandtl number molten semiconductor materials; (2) to determine whether the flows can be suppressed by a thin oxide layer; and (3) based on experimental and mathematical analysis, to predict whether oscillatory flows will occur in the float zone silicon geometry in space, and if so, could it be suppressed by thin oxide or nitride films. Techniques were developed to analyze molten tin surfaces in a UHV system in a disk float zone geometry to minimize buoyancy flows. The critical Marangoni number for onset of oscillatory flows was determined to be greater than 4300 on atomically clean molten tin surfaces.

Verhoeven, J. D.↗
NASA NTRS2003

Experiments on Suppression of Thermocapillary Oscillations in Float-Zones by High-Frequency End-Wall Vibrations

Experiments to suppress thermocapillary oscillations using high-frequency vibrations were performed on float-zones. Such a float-zone is formed by melting one end of a vertically held sodium nitrate-barium nitrate crystal rod in contact with a hot surface at the top. In the experiments, when thermocapillary oscillation occurred, the bottom end of the rod was vibrated at a high frequency to generate fine ripples on the melt surface, driving a streaming flow in the opposite direction to that of the thermocapillary convection. It was observed that by generating a sufficiently strong streaming flow the thermocapillary flow can be offset enough such that the associated thermocapillarity oscillations can be quenched.

Anilkumar, A. V.↗
NASA NTRS1990

Morphological instability in a float zone

This paper examines the morphological instability of the freezing interface of the float zone in a crystal sheet for which the height of the liquid zone L = Lf + Lm (where Lf and Lm are the planar positions of the solidifying and melting interfaces) is smaller than the width and the thickness of the sheet. The Lf and Lm positions are calculated, and basic state concentration profiles are determined for a planar interfacial system. A linear stability analysis of this system is performed showing that the growth rate of disturbances is a modified version of the growth rate for a directional solidification system. It was found that shorter melt zone configurations are less susceptible to long wavelength morphological instability, indicating that, to suppress morphological instability in a float zone system, it is necessary to decrease the liquid zone height.

Humphreys, Laura B.↗
NASA NTRS1976

Float-zone processing in a weightless environment

The results were reported of investigations to: (1) test the validity of analyses which set maximum practical diameters for Si crystals that can be processed by the float zone method in a near weightless environment, (2) determine the convective flow patterns induced in a typical float zone, Si melt under conditions perceived to be advantageous to the crystal growth process using flow visualization techniques applied to a dimensionally scaled model of the Si melt, (3) revise the estimates of the economic impact of space produced Si crystal by the float zone method on the U.S. electronics industry, and (4) devise a rational plan for future work related to crystal growth phenomena wherein low gravity conditions available in a space site can be used to maximum benefit to the U.S. electronics industry.

Fowle, A. A.↗
NASA NTRS1985

Float Zone Experiments in Space

The objective of this work has been to evaluate whether or not Marangoni flow could be suppressed in molten metals by the presence of very thin oxide films. Experimental work has been carried out on molten Sn under UHV conditions. A disk floating zone arrangement was developed to allow in situ Auger examination of molten surfaces. An electron energy loss technique was developed which allows detection of continuous tin oxide films of 6 A or greater. Experiments were planned to detect the effects of oxide formation upon Marangoni flow by measuring: (1) temperature profiles, (2) solid liquid interface shapes, (3) macrosegregation, and (4) the onset of oscillatory Marangoni flow by detecting oscillating temperature variations. Work on (4) showed that oscillatory temperature variations of frequency or = 10 Hz were not present in the disk float zone geometry under conditions of Ma = 4300 with an oxide free molten surface. The disk float zone geometry was modeled with a finite element analysis and temperature and velocity profiles were determined.

Verhoeven, J. D.↗
NASA NTRS1993

Computer-controlled float zone crystal growth

A PC-based computer control system to automate a high-temperature float zone growth of titanium carbide is reported. The control strategy of the computer control system relies on the relations derived from a combination of empirical relations and results from detailed mathematical analysis of the physical transports of the entire float zone assembly. A system control computer program was written to establish real-time determination of the size of the molten zone from a thermal image, control parameters from established relationships, and collected processed data to achieve control objectives. We found that the developed computer control allows the growth process to be operated nearer the stability limit. Any slight variations in growth conditions can be corrected in time to avoid any instability growth, which otherwise cannot be adjusted via manual control.

Chan, Y. T.↗