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DOE OSTI2026

Nuclear recoil detection with color centers in bulk lithium fluoride

We present initial results on the detection of nuclear recoils in lithium fluoride (LiF) through the fluorescence of color centers created by particle interactions in the crystal lattice. Using light-sheet fluorescence microscopy, we image nuclear recoil tracks from both fast and thermal neutron interactions deep within a cubic-centimeter-scale sample. Automated three-dimensional feature extraction based on machine-learning tools enables the identification and classification of individual events. We observe that the fluorescence response of LiF to gamma irradiation is strongly suppressed, by a factor of 30–50 compared to neutron exposure, demonstrating intrinsic insensitivity to electromagnetic backgrounds. The observed and simulated event characteristics are consistent, including their number, size, and topology. These results establish the feasibility of LiF as a scalable detection medium for rare nuclear-recoil events and constitute a first step toward 10–1000 g scale detectors with single-event sensitivity for applications in reactor-neutrino detection, neutron spectroscopy, and dark matter searches.

Aroujo, G R [University of Zurich]↗

DOE OSTI2025

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Relocation of the 8 September 2023 High Atlas, Morocco, Earthquake Aftershock Sequence

The earthquake that occurred on 8 September 2023, with a magnitude of 6.8, was the most destructive earthquake event in Morocco in the past decade. This earthquake took place in the Al Haouz region, located in the western part of the High Atlas Mountain range. To better understand what caused and triggered this earthquake, the earthquake catalogs including P and S arrival times were collected from the Moroccan seismic network and combined with regional data from the International Seismological Centre. The mainshock and aftershocks were relocated by using iLoc, a state-of-the-art single-event location algorithm, and then by the multiple event location double-difference algorithm, hypoDD. The improved earthquake relocations using iLoc and the double-difference methods provide sharper lineation of seismicity and agree well with tomographic images of the earthquake zone. Finally, the seismicity distribution and the focal mechanism of the mainshock indicate that the earthquake sequence has occurred along the South Atlas fault system.

58 GEOSCIENCES↗

DOE OSTI2025

Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Alpha particles are known to be a major source of particles creating soft errors in semiconductor devices, such as content flipping in Static Random-Access Memory (SRAM). Recent advancements in transistor nodes have led to the introduction of Gate-All-Around Field Effect Transistors (GAA-FETs), which have better gate control, thus better electrostatics. Moreover, the introduction of bottom dielectric isolation (BDI) eliminates substrate leakage and thus is expected to enhance its radiation hardness. It is thus important to explore if one can design an SRAM that is completely radiation-hard to alpha particles. In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design an SRAM using GAA-FET technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LET max , for the alpha particle in Si and Si x Ge 1-x . Based on that, by de signing a sub-7nm GAA-FET-based SRAM with BDI, we show that the SRAM does not flip even if the particle strike is in the worst-case scenario for LET > LET max .

42 ENGINEERING↗

DOE OSTI2026

Bent Crystal Channeling for Optimized Beam Shadowing and Proton Extraction at Mu2e

The Mu2e experiment is designed to investigate the CLFV through the observation of a neutrinoless muon-to-electron conversion in the field of an Al nucleus. The observation of such a process would be clear evidence of physics beyond the standard model. Due to the rarity of this process, a cutting-edge, intense muon beam is required to achieve an improvement of the current single-event sensitivity by 4 orders of magnitude. To achieve this goal, a primary proton beam with 8 GeV is extracted from the Fermilab Delivery Ring using the slow resonant extraction technique. Mu2e requires ~3.6x10$^{20}$ protons-on-target to meet its goal; hence, it is crucial to minimize the extraction losses. An important source of such losses are the particles impacting on the electrostatic septum blade. A very promising solution to the problem lies in the beam shadowing scheme tested at CERN SPS. In this approach, a bent crystal is strategically placed upstream of the septum, deflecting particles from the blade at a precise angle via the phenomenon of channeling. As a result, a zone with reduced particle flux is created downstream of the crystal, safeguarding the septum anode by minimizing interactions with the beam. This work explores the optimization of beam shadowing design and the process in the manufacturing and characterization of the bent crystal sample. It emphasizes the promising role of channeling in bent crystals, and it underscores the significant potential of channeling in bent crystals to assist the Mu2e experiment.

Fedeli, Pierluigi [Ferrara U.; INFN, Ferrara] (ORC↗

NASA NTRS1976

Selected methods for quantification of community exposure to aircraft noise

A review of the state-of-the-art for the quantification of community exposure to aircraft noise is presented. Physical aspects, people response considerations, and practicalities of useful application of scales of measure are included. Historical background up through the current technology is briefly presented. The developments of both single-event and multiple-event scales are covered. Selective choice is made of scales currently in the forefront of interest and recommended methodology is presented for use in computer programing to translate aircraft noise data into predictions of community noise exposure. Brief consideration is given to future programing developments and to supportive research needs.

Edge, P. M., Jr.↗

NASA NTRS1980

Simple method for prediction of aircraft noise contours

A method for generating noise contours more rapidly and more simply than previously used programs is discussed. The method gives the area, the noise contour, and its extremities for an arbitrarily complex flight path for both takeoffs and landings with relative ease. The analysis reveals the fundamental nature of the contours and how the various factors that influence its size and shape enter into the analysis. It is noted that the effects of ground attenuation and shielding are omitted as they are important only on the initial portion of flight and are highly dependent upon aircraft configuration. However, the analysis shows that these effects could be included. It is emphasized the the single-event contour is an obvious choice for purposes of minimizing noise impact.

Stewart, E. C.↗

NASA NTRS1984

The Effect of Cosmic Rays on MSI Devices

Low-power devices susceptible to cosmic-ray particles. Five MSI device technologies, including TTL, low power TTL, Schottky, CMOS, and low-power Schottky, subjected to 120-MeV krypton-ion beam from cyclotron and monitored for single-event upset. Results find terrestrial application for radiation hardening of electronic devices and systems.

Nichols, D. K.↗

NASA NTRS1982

Single event upset sensitivity of low power Schottky devices

Data taken from tests involving heavy ions in the Berkeley 88 in. cyclotron being directed at low power Schottky barrier devices are reported. The tests also included trials in the Harvard cyclotron with 130 MeV protons, and at the U.C. Davis cyclotron using 56 MeV protons. The experiments were performed to study the single event upsets in MSI logic devices containing flip-flops. Results are presented of single-event upsets (SEU) causing functional degradation observed in post-exposure tests of six different devices. The effectiveness of the particles in producing SEUs in logic device functioning was found to be directly proportional to the proton energy. Shielding was determined to offer negligible protection from the particle bombardment. The results are considered significant for the design and fabrication of LS devices for space applications.

Price, W. E.↗

NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗

NASA NTRS1986

Single-Event-Upset Studies: A Compilation

Document summarizes 15 studies of single-event upsets covering 60 different types of semiconductor devices. Studies discussed in document include verification of basic reactions induced by heavy ions and protons and surveys of latchup and bit-flip susceptibility of several types of devices and device-fabrication technologies.

Nichols, D. K.↗

NASA NTRS1984

Annual Conference on Nuclear and Space Radiation Effects, 21st, Colorado Springs, CO, July 23-25, 1984, Proceedings

Radiation effects on electronic systems and devices (particularly spacecraft systems) are examined with attention given to such topics as radiation transport, energy deposition, and charge collection; single-event phenomena; basic mechanisms of radiation effects in structures and materials; and EMP phenomena. Also considered are radiation effects in integrated circuits, spacecraft charging and space radiation effects, hardness assurance for devices and systems, and SGEMP/IEMP phenomena.

Winokur, P. S.↗

NASA NTRS1984

Soft-error generation due to heavy-ion tracks in bipolar integrated circuits

Both bipolar and MOS integrated circuits have been empirically demonstrated to be susceptible to single-particle soft-error generation, commonly referred to as single-event upset (SEU), which is manifested in a bit-flip in a latch-circuit construction. Here, the intrinsic characteristics of SEU in bipolar (static) RAM's are demonstrated through results obtained from the modeling of this effect using computer circuit-simulation techniques. It is shown that as the dimensions of the devices decrease, the critical charge required to cause SEU decreases in proportion to the device cross-section. The overall results of the simulations are applicable to most integrated circuit designs.

Zoutendyk, J. A.↗

NASA NTRS1986

Guidelines for SEU-Resistant Integrated Circuits

Paper presents recent results of continuing program for increasing resistance of integrated circuits to single-event upset (SEU). Results based on study of test data for heavy-ion SEU in more than 180 different types of devices. (Some devices perform identical functions but made by different processes.) Program also examines developments in mathematical models for SEU.

Nichols, D. K.↗

NASA NTRS1986

Predicting the Cosmic-Ray Environment Near Earth

Package of computer programs developed to predict cosmic-ray environment for spacecraft in orbit near Earth. Single cosmic-ray particle deposits enough electrical charge on sensitive area of individual circuit to change bit state. Single-event upsets may not cause permanent damage but upset functioning devices. Used to predict upset rate for space mission. Also calculates time-average cosmic-ray environment for multiple circular orbits, fragments of trajectories, and isolated points. Package written in HPL for interactive execution and implemented on HP 9825B desktop computer.

Edmonds, L.↗

NASA NTRS1986

Field Funneling and Range Straggling in Silicon Detectors

Magnitudes of field funneling and range straggling determined in silicon-surface-barrier (Schottky-barrier) charged-particle detectors (SSBD's) through meaurement of charges collected from alpha-particle tracks. Method used extended to straightforward measurement of charge collection from heavy-ion tracks in these and other semiconductor devices. Such measurements used to assess single-event upsets in integratedcircuit chips, with view toward making them resistant to radiation. Field funneling and range straggling measured with electronic system in which charge collected from individual ions measured and recorded by multichannel analyzer.

Zoutendyk, J. A.↗

NASA NTRS1985

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Jones, C. W.↗

NASA NTRS1986

1986 Annual Conference on Nuclear and Space Radiation Effects, 23rd, Providence, RI, July 21-23, 1986, Proceedings

The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.

Ellis, Thomas D.↗