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At least 37 records · Page 2

Lessons Learned from Hanford's Purex Tunnel 2 Structural Stabilization Project - 20509

In 2019, U.S. Department of Energy (DOE) contractor CH2M Hill Plateau Remediation Company (CHPRC) completed structurally stabilizing the Plutonium Uranium Extraction Plant (Purex) waste storage Tunnel 2 with engineered grout. This action significantly reduced risk to Hanford workers, the surrounding community and environment by preventing future collapse of the tunnel and possible release of radioactive materials. Decades of plutonium production at the Purex facility required construction of two large underground tunnels for storage of highly contaminated plutonium processing equipment that had failed during the operation of Purex and other facilities across the Hanford Site. Following the partial collapse of Purex Tunnel 1 on May 9, 2017, DOE and CHPRC took immediate action to safely stabilize the collapsed section of the tunnel. The hole in the tunnel was filled the next day as a temporary stabilization measure, and no contamination was detected as a result of the partial collapse of the tunnel. Workers then stabilized Tunnel 1 in its entirety by filling with engineered grout, which also encapsulated the radioactive equipment and railcars within the tunnel. Grouting eliminated the risk of further collapse and stabilized the tunnel contents, all while not precluding future remedial actions or final closure decisions. While conducting an integrity analysis of Tunnel 1 by using construction drawings, photos and other historical documents, project teams also analyzed the much larger Purex Tunnel 2. The analysis found Tunnel 2 did not meet current codes for structural integrity, and it may not be able to bear the weight of the soil above the tunnel. Therefore, it was determined that Tunnel 2 was also at risk of collapse. DoE's independent panel of experts determined grouting to be the best choice for stabilizing Tunnel 2 because it provides the highest level of stability and protection, and does not preclude future remedial actions. DOE authorized CHPRC to commence work and the Purex Tunnel 2 Structural Stabilization Project was launched in December of 2017. The paper will discuss the process of recognizing the following critical aspects and risks associated with stabilizing Tunnel 2, and the actions taken by the project team to mitigate these risks, including: - Tunnel investigation and data collection to assist with future remediation; - On-site batching and mock-ups to provide the large quantity of grout required for stabilizing the tunnel; - Workforce involvement and innovative actions that mitigated the project's most significant potential hazards, including traffic control; - Project team high level of execution translated into successful project execution. Sharing lessons learned from this critical risk-reduction effort can enhance the safety and efficiency of other complex and hazardous projects across the DOE complex. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

An Architectural Survey of the U12G Tunnel Historic District, Nevada National Security Site, Nye County, Nevada

The U.S. Department of Energy (DOE), in conjunction with the National Nuclear Security Administration Nevada Field Office (NNSA/NFO), proposes to demolish six buildings and three storage areas located at the U12g Tunnel portal area in Area 12 of the Nevada National Security Site (NNSS). The buildings are 12-358 (Signal Vault); 12-201800 (Storage Quonset Hut); 12-202555 (Walker Shack); 12-868 (Pipe Assembly); 12-B100933 (Electrical Shop); 12-B100944 (Conference Room); and Storage Area 1; Storage Area 2; and Storage Area 3. The buildings and storage areas were selected for demolition as part of the DOE’s Real Property Efficiency Plan to reduce the footprint of unused and non-operational facilities on the NNSS. They are all vacant and have no proposed uses for current or upcoming NNSS missions. Demolition activities constitute an undertaking subject to review under Section 106 of the National Historic Preservation Act (NHPA) (54 United States Code [USC] § 306101) and its implementing regulations, 36 Code of Federal Regulations (CFR) Part 800. Identification efforts began with resources proposed for demolition in federal Fiscal Year (FY) 23. Four buildings were proposed to be demolished in FY23 (12-358, 12-868, 12-201800, and 12-202555). These buildings and the U12g Tunnel Historic District (SHPO No. D444) were recorded in Identification, Evaluation, and Finding of Adverse Effect for the Proposed Demolition of Five Buildings in Area 12, Nevada National Security Site, Nye County, Nevada (Menocal et al. 2023). Identification efforts indicated three buildings (12-358, 12-201800, and 12-868) supported nuclear testing in the U12g Tunnel. The fourth building post-dated the use of U12g Tunnel for nuclear testing activities. The report recommended that three of the four buildings (12-358, 12-201800, 12-868) and the U12g Tunnel Historic District may be eligible for the National Register of Historic Places (NRHP). The report also found that the undertaking would have an adverse effect on the three buildings and on the historic district. The Nevada State Historic Preservation Office (SHPO) concurred with the report’s findings (Reed 2023). The U12g Tunnel was determined eligible as a historic district under the Secretary of the Interior’s (SOI) Significance Criterion A, at the local level, in the context of the Cold War as an underground testing environment for the development of nuclear weapons and to assess the effects of a nuclear explosion on materials and equipment with a period of significance from 1959 to 1971. It was also determined eligible under Significance Criterion C for embodying the distinctive characters of a horizontal tunnel complex used for nuclear testing and as a significant and distinguishable entity. The three buildings were determined to be contributing elements of the district. The undertaking was expanded with the addition of two buildings and three storage areas proposed to be demolished and located within U12g Tunnel Historic District in FY24. These five resources (12-B100933, 12-B100944, and Storage Areas 1, 2, and 3) were recorded in Supplemental Identification, Evaluation, and Finding of Effect for Additional Proposed Demolition at U12g Tunnel, Area 12, Nevada national Security Site, Nye County, Nevada (Brannan et al. 2024). Identification efforts indicated that the two buildings and Storage Area 1 supported nuclear testing in the U12g Tunnel. Storage Area 1 and Storage Area 2 post-dated the nuclear testing activities at U12g Tunnel and were not recommended as contributing elements to the district. The report also found that the undertaking would have an adverse effect on the newly identified buildings and one storage area and on the historic district. The SHPO concurred that the expanded undertaking would result in adverse effects to historic properties (Reed 2025). To resolve these adverse effects, NNSA/NFO, in consultation with the SHPO, is following standard mitigation as stipulated in the 2024 Programmatic Agreement DE-GM58-22NA25554 Among the U.S. Department of Energy and the Nevada State Historic Preservation Officer and the Advisory Council on Historic Preservation Concerning the Protection of Historic Properties on the Nevada National Security Site, Nye County, Nevada (hereafter referred to as the NNSS PA). The standard mitigation measures are outlined in Appendix D of the NNSS PA. As such, this architectural survey has been prepared in accordance with Appendix D of the NNSS PA and follows the report format outlined in Appendix F. It includes a historic context that describes the district’s origin, history, and support functions, its significance in the context of nuclear testing on the NNSS, and identifies contributing and non-contributing elements within the district. The report is accompanied by Architectural Resource Assessment (ARA) forms for individual resources and a Historic District Resource Assessment (HDRA) for the U12g Tunnel Historic District. In total, this architectural report identified 32 primary resources within the district boundary. Six of the primary resources were previously identified as contributing elements. An additional 17 resources are recommended as contributing elements to the district for a total of 23 contributing elements. The other nine resources identified are recommended as non-contributing elements to the district.

12-201800↗

Evaluation of H-Canyon Ventilation Exhaust Tunnel Inspection at the Savannah River Site - 20052

The Department of Energy (DOE) H-Canyon Facility at the Savannah River Site (SRS) is operated by Savannah River Nuclear Solutions (SRNS). The Facility Structural Integrity Program [1] provides a process to inspect, evaluate, and document the conditions of passive safety related structural systems and components, their degradation mechanisms and their impact on the safety envelope. The Structural Integrity Program performs periodic visual inspections to confirm the systems and components can perform their safety function and recommend corrective actions before the function is compromised. The H-Canyon Exhaust Tunnel is part of the H-Canyon Ventilation System and is periodically inspected under the Structural Integrity Program. The Tunnel performs a Safety Class passive design feature function that is available 100% of the time. The underground reinforced concrete Tunnel directs Canyon process air from the Canyon to the Sand Filter System. The radiological and chemical airborne activity coupled with the physical configuration of the tunnel precludes a manned entry into the tunnel to perform the inspection. Unlike active systems that can be subjected to physical testing to confirm capability, qualification calculations, including modeling, is performed to assess passive design feature capabilities relative to operational, accident and natural phenomena hazards events. Input for these calculations come from knowledge of field conditions, design drawings and conservative assumptions. The knowledge of field conditions comes from concrete and soil testing activities as well as inspection data. The use of cameras on crawlers to obtain inspection data and how that data is used in qualification calculations is the focus of this discussion. Remote Tunnel inspections have been performed using cameras on a stick, referred to as pole cameras, prior to Calendar Year 2003 (CY2003). Since CY2003, six camera equipped crawlers have been used. Crawlers have evolved and improved by incorporating lessons learned from the previous inspections. The latest 2019 crawler successfully traveled the entire length of the tunnel between the Canyon and Sand Filter System and captured images that were previously unseen, thus providing key visual data for the Structural Integrity Program report [2]. The inspection data serves as 1) input to qualification calculations, 2) validates current conditions remain bounded by qualification calculations, and 3) documents a record of change over time. This data is vital for the effective evaluation of the tunnel structure and aids with predicting the life cycle service life safety envelope to protect the public, environment, and facility worker. The goal of the 2019 deployment was to use a more robust vehicle to ensure travel over obstacles, perform the inspection with higher resolution cameras, and have the ability to elevate the cameras to view surfaces previously obscured by abandon-in-place ducts in the tunnel. The inspection information will serve to strengthen the input basis for qualification calculations, versus using excessive conservative calculation assumptions. This 2019 inspection was compared with previous crawler visual evidence to identify change over time to project remaining service life and confirm field conditions remain bounded by qualification calculations. The results of the 2019 Exhaust Tunnel inspection continue to improve and provide a firm basis to make sound engineering judgements regarding tunnel capability and approaches in projecting remaining service life with an aging system and component. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Low voltage drop tunnel junctions grown monolithically by MOCVD

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Here, two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm 2 . The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.

42 ENGINEERING↗

Impact of Stabilizing Cations on Lithium Intercalation in Tunneled Manganese Oxide Cathodes

Stabilizing cations such as K + , Ba 2+ , and Ag + are known to provide charge neutrality and enhance structural stability in low-cost tunneled manganese dioxide (MnO 2 ) cathodes for Li ion batteries. However, a fundamental understanding of the role of these cations in the electrochemical performance of tunneled MnO 2 cathodes remains unclear, especially at low stabilizing cation concentrations. Here, we employ density functional theory (DFT + U) calculations to reveal the impact of stabilizing potassium cation (K + ) concentration on the structural stability, electronic properties, and kinetics of lithium transport in 2 x 2 tunneled manganese oxide (α-K y Mn 8 O 16 , at y = 0, 1, and 2) battery cathodes during lithium intercalation. Specifically, we provide insights into the effect of K + ions on several critical factors governing the electrochemical storage performance of tunneled MnO2 cathodes, including (a) energetically favorable Li+ host sites, (ii) Li + and electron transport capabilities, (iii) optimal intercalation pathways, crystal distortion, microstructural stability, and tunneled-to-layer phase transformation as a function of lithium content, and (iv) cell output voltage profile. Interestingly, we find that low K + concentrations (y ≤ 1) yield partially cation-deficient tunnels in the MnO 2 cathode. Such unique tunnel structures in the cathode enable (a) low kinetic barriers for Li transport, (b) excellent thermodynamic stability of the tunneled structure even at a high Li + loading (up to ~ 0.625 Li/Mn), and (c) good electronic conductivity facilitated by Jahn-Teller distortions; all of which are critical for achieving high capacity batteries with enhanced rate capability. Additionally, these results provide perspectives to design low-cost transition metal oxide cathodes for high-performance Li-ion batteries with excellent cycle life.

25 ENERGY STORAGE↗

Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking

Multiferroic tunnel junctions (MFTJs) represent a class of multistate, non-volatile spintronic devices, in which electron tunnelling can be manipulated by switching long-range lattice and spin orders. In contrast to conventional oxide-based MFTJs, MFTJs constructed from two-dimensional van der Waals (vdW) crystals promise minimal defect concentration in the constituents and at interfaces, which may allow for probing intrinsic tunnelling physics and the development of high-performance devices. Here, in this study, we construct Fe 3 GeTe 2 /CuInP 2 S 6 /Fe 3 GeTe 2 all-vdW MFTJs by assembling multilayer flakes of ferromagnetic Fe 3 GeTe 2 electrodes and a ferroelectric CuInP 2 S 6 spacer. These MFTJs exhibit four non-volatile resistance states featuring sizable tunnelling magnetoresistance of ∼10 2 % and tunnelling electroresistance of ∼10 4 %. To tune the properties of the vdW MFTJ, we make use of the flexibility in material choice offered by vdW heterostructure devices; we use Fe 3 GeTe 2 /Fe 5 GeTe 2 asymmetric electrodes to boost the tunnelling electroresistance by 10 3 %, we integrate In 2 Se 3 as a ferroelectric with a smaller bandgap to enhance the ON-state current density by 10 4 % to 10 4 A cm −2 and we use Fe 3 GaTe 2 electrodes to demonstrate room temperature operation. Furthermore, when we combine the asymmetric ferromagnetic electrodes with the small-bandgap ferroelectric spacer to construct Fe 3 GeTe 2 /In 2 Se 3 /Fe 5 GeTe 2 MFTJs, we simultaneously realized tunnelling electroresistance of 10 6 % and an ON-state current density of 10 4 A cm −2 , both two orders of magnitude higher than the highest values achieved with conventional oxide-based MFTJs. In the future, our all-vdW MFTJs with the tailorability of all functional layers may make it possible to investigate fundamental aspects of interlayer tunnelling and enable the design of functional magnetoelectric nanodevices.

Xie, Ti [University of Maryland, College Park, MD ↗

Atomic-scale control of tunneling in donor-based devices

Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of the tunneling rates and tunnel coupling has not been demonstrated. Here using a room temperature grown locking layer and precise control over the entire fabrication process, we reduce unintentional dopant movement while achieving high quality epitaxy in scanning tunnelling microscope (STM)-patterned devices. Using the Si(100)2 × 1 surface reconstruction as an atomically-precise ruler to characterize the tunnel gap in precision-patterned single electron transistors, we demonstrate the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows. We demonstrate the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the tunneling rates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A numerical evaluation of the ambient air temperature in the Electron-Ion Collider tunnel

The Electron-Ion Collider (EIC) is a next-generation collider-accelerator that may require consistent operating temperature conditions for the beams within the accelerator tunnels to maintain stable operation. Variations in ambient temperature within the tunnel can cause thermal expansion of beampipe and component supports and can negatively affect the tunnel equipment, impacting the stability of the beamline. Modifications will be made to the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory (BNL) to create the EIC, which necessitates a temperature model that addresses these modifications. To approach this problem, the consistency of temperature changes in different tunnel sections was first evaluated by plotting RHIC tunnel temperature data at various times of the day and year. From this data, a tunnel section was selected and a 2D temperature model was created for RHIC, EIC, and EIC with added cooling configurations. Soil temperature data was analyzed to determine the maximum, average, and mode soil temperatures, which were used as boundary conditions in different temperature scenarios. Computational fluid dynamics modeling was used to create 2D temperature profiles for the configurations. From this model, the predicted temperatures indicate that further analysis is required to validate the boundary conditions and benchmark the current conditions to allow the prediction of the tunnel ambient conditions at EIC. This research can be used as a preliminary model to create an EIC tunnel cooling system that will increase the operational stability of the EIC. As a result of my work this summer, I have become familiar with computational fluid dynamics, including creating fluid dynamic simulations using ANSYS Fluent and related software. I have also learned about the project process required for planning large-scale engineering projects.

43 PARTICLE ACCELERATORS↗

Fully Transparent GaN Homojunction Tunnel Junction-Enabled Cascaded Blue LEDs.

A sidewall activation process was optimized for buried magnesium-doped p-GaN layers yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward voltage. This buried activation enabled the realization of cascaded blue LEDs with fully transparent GaN homojunction tunnel junctions. The initial optimization of buried p-GaN activation was performed on PN junctions grown by metal organic chemical vapor deposition (MOCVD) buried under hybrid tunnel junctions grown by MOCVD and molecular beam epitaxy. Next the activation process was implemented in cascaded blue LEDs emitting at 450 nm, which were enabled by fully transparent GaN homojunction tunnel junctions. The tunnel junction-enabled multi-active region blue LEDs were grown monolithically by MOCVD. This work demonstrates a state-of-the-art tunnel junction-enabled cascaded LED utilizing homojunction tunnel junctions which do not contain any heterojunction interface.

42 ENGINEERING↗

A density-functional theory study of the Al/AlOx/Al tunnel junction

The aluminum oxide tunnel junction is a key component of the majority of superconducting quantum devices. For high-quality, reproducible, and scalably manufacturable qubits, the ability to fabricate Josephson junctions (JJs) with a targeted critical current and high uniformity is essential. In this study, we use first-principles modeling to assess fundamental aspects of the atomic structure of both amorphous and crystalline aluminum oxide tunnel junctions and relate the structure to predicted performance metrics. We use modified ab initio molecular dynamics to develop realistic models of the tunnel junction, from which interface roughness and local thickness fluctuations are analyzed in an unbiased manner by training a neural network to identify the boundary between metal and oxide. We show that the effective thickness of the insulating part of the junction can be different from the apparent physical thickness. We calculate the rate of Cooper pair tunneling for the atomically resolved electrostatic potential using direct numerical solution in 3D, which shows a channeling effect that impacts the junction critical current. The predicted critical current is a useful JJ design parameter that can be accessed from the ab initio calculations without fitting parameters. To assess the limits of uniformity and fabrication choices (e.g., oxidation vs epitaxy), we compare the amorphous junctions to crystalline models, which show order of magnitude more efficient tunneling compared to the amorphous case, underlining the connection between atomistic structure and Cooper pair tunneling efficiency. Further, this work provides a foundation for ab initio materials design and evaluation to help accelerate future development of improved tunnel junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction memory elements can be used for computation by manipulating a domain wall, a transition region between magnetic domains, but the experimental study of such devices has been limited by high current densities and low tunnel magnetoresistance. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy, spin–orbit torque switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 171% and average resistance-area product RA = 29 Ω μm2, close to the RA of the unpatterned film. Device initialization variation in switching voltage is shown to be curtailed to 7%–10% by controlling the domain wall initial position, which we show corresponds to 90%–96% accuracy in a domain wall-magnetic tunnel junction full adder simulation. Repeatability of writing and resetting the device is shown. A circuit shows an inverter operation between two devices, showing that a voltage window is large enough, compared to the variation noise, to repeatably operate a domain wall-magnetic tunnel junction circuit. These results make strides in using magnetic tunnel junctions and domain walls for in-memory and neuromorphic computing applications.

Alamdar, Mahshid (ORCID:0000000221732935)↗

Biomechanical Comparison of Anatomic Restoration of the Ulnar Footprint vs Traditional Ulnar Tunnels in Ulnar Collateral Ligament Reconstruction

Background: Current techniques for ulnar collateral ligament (UCL) reconstruction do not reproduce the anatomic ulnar footprint of the UCL. The purpose of this study was to describe a novel UCL reconstruction technique that utilizes proximal-to-distal ulnar bone tunnels to better re-create the anatomy of the UCL and to compare the biomechanical profile at time zero among this technique, the native UCL, and the traditional docking technique. Hypothesis: The biomechanical profile of the anatomic technique is similar to the native UCL and traditional docking technique. Study Design: Controlled laboratory study. Methods: Ten matched cadaveric elbows were potted with the forearm in neutral rotation. The palmaris longus tendon graft was harvested, and bones were sectioned 14 cm proximal and distal to the elbow joint. Specimen testing included (1) native UCL testing performed at 90° of flexion with 0.5 N·m of valgus moment preload, (2) cyclic loading from 0.5 to 5 N·m of valgus moment for 1000 cycles at 1 Hz, and (3) load to failure at 0.2 mm/s. Elbows then underwent UCL reconstruction with 1 elbow of each pair receiving the classic docking technique using either anatomic (proximal to distal) or traditional (anterior to posterior) tunnel locations. Specimen testing was then repeated as described. Results: There were no differences in maximum load at failure between the anatomic and traditional tunnel location techniques (mean ± SD, 34.90 ± 10.65 vs 37.28 ± 14.26 N·m; P = .644) or when including the native UCL (45.83 ± 17.03 N·m; P = .099). Additionally, there were no differences in valgus angle after 1000 cycles across the anatomic technique (4.58°± 1.47°), traditional technique (4.08°± 1.28°), and native UCL (4.07°± 1.99°). The anatomic group and the native UCL had similar valgus angles at failure (24.13°± 5.86° vs 20.13°± 5.70°; P = .083), while the traditional group had a higher valgus angle at failure when compared with the native UCL (24.88°± 6.18° vs 19.44°± 5.86°; P = .015). Conclusion: In this cadaveric model, UCL reconstruction with the docking technique utilizing proximal-to-distal ulnar tunnels better restored the ulnar footprint while providing valgus stability comparable with reconstruction with the docking technique using traditional anterior-to-posterior ulnar tunnel locations. These results suggest that utilization of the anatomic tunnel location in UCL reconstruction has similar biomechanical properties to the traditional method at the time of initial fixation (ie, not accounting for healing after reconstruction in vivo) while keeping the ulnar tunnels farther from the ulnar nerve. Further studies are warranted to determine if an anatomically based UCL reconstruction results in differing outcomes than traditional reconstruction techniques. Clinical Relevance: Current UCL reconstruction techniques do not accurately re-create the ulnar UCL footprint. The UCL is a dynamic constraint to valgus loads at the elbow, and a more anatomic reconstruction may afford more natural joint kinematics. This more anatomic technique performs similarly to the traditional docking technique at time zero, and the results of this study may offer a starting point for future in vivo studies.

Chang, Edward S.↗

Controlled Hysteresis of Conductance in Molecular Tunneling Junctions

The problem this paper addresses is the origin of the hysteretic behavior in two-terminal molecular junctions made from an EGaIn electrode and self-assembled monolayers of alkanethiolates terminated in chelates (transition metal dichlorides complexed with 2,2'-bipyridine; BIPY-MCl 2 ). The hysteresis of conductance displayed by these BIPY-MCl 2 junctions changes in magnitude depending on the identity of the metal ion (M) and the window of the applied voltage across the junction. The hysteretic behavior of conductance in these junctions appears only in an incoherent (Fowler–Nordheim) tunneling regime. When the complexed metal ion is Mn(II), Fe(II), Co(II), or Ni(II), both incoherent tunneling and hysteresis are observed for a voltage range between +1.0 V and –1.0 V. When the metal ion is Cr(II) or Cu(II), however, only resonant (one-step) tunneling is observed, and the junctions exhibit no hysteresis and do not enter the incoherent tunneling regime. Using this correlation, the conductance characteristics of BIPY-MCl 2 junctions can be controlled. Furthermore, this voltage-induced change of conductance demonstrates a simple, fast, and reversible way (i.e., by changing the applied voltage) to modulate conductance in molecular tunneling junctions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Dramatic effect of electrode type on tunnel junction based molecular spintronic devices

A new class of molecular spintronic devices can be fabricated by chemically bonding magnetic molecular channels to the electrodes of a prefabricated tunnel junction with exposed side edges. Prior experimental studies showed that the cyanide-bridged octametallic molecular cluster, [(pzTp)FeIII(CN)3]4[NiII(L)]4¬[O3SCF3]4 [(pzTp) = tetra(pyrazol-1-yl)borate; L = 1-S(acetyl)tris(pyrazolyl)decane] molecule impact depended on the type of metallic electrodes used in the tunnel junction testbed. Experimental magnetization and transport studies showed a dramatic difference in molecule response on tunnel junctions with different combinations of metallic electrodes. Transport via paramagnetic molecular channels on a tunnel junction involving paramagnetic and ferromagnetic metal electrodes was dramatically different than the suppressed current state observed on tunnel junctions involving two ferromagnetic electrodes. We conducted theoretical studies to understand the experimental data and explore a wide range of electrode materials on tunnel junction-based molecular spintronics devices (TJMSD). Here, we report a Monte Carlo simulation study that focuses on understanding the effect of electrodes on the magnetic and physical properties of TJMSD. A 3D Heisenberg model of cross-junction-shaped TJMSD was used for the simulation study. We studied the effects of ferromagnetic, paramagnetic, and antiferromagnetic electrode materials. This study provides insights for designing and understanding futuristic molecular spintronics devices.

36 MATERIALS SCIENCE↗

Time-Resolved Observation of Hole Tunneling in van der Waals Multilayer Heterostructures

We reported a time-resolved study of quantum-mechanical tunneling of holes between two MoSe 2 monolayers that are separated by a monolayer WS 2 energy barrier. Four-layer heterostructures of MoSe 2 /WS 2 /MoSe 2 /graphene, as well as control samples, were fabricated by mechanical exfoliation and dry transfer techniques. To time-resolve the hole tunneling process, an ultrashort laser pulse was used to excite electrons and holes in both MoSe 2 layers. Here, by utilization of the graphene layer to eliminate carriers in the third MoSe 2 layer, the first MoSe 2 layer is selectively populated with the holes, which then tunnel to the third MoSe 2 layer. By monitoring decay of the hole population with an ultrashort probe pulse, we measure a hole tunneling time of about 20 ps, which is found to slightly increase with the injected carrier density. Besides the fundamental interests of real-time observation of the quantum-mechanical tunneling effect across a nanometer barrier, these results provide quantitative understanding on tunneling mechanisms of charge transfer in van der Waals heterostructures, which is useful for designing sophisticated van der Waals multilayer heterostructures.

36 MATERIALS SCIENCE↗