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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Three-dimensional nanoscale metal, metal oxide, and semiconductor frameworks through DNA-programmable assembly and templating

Controlling the three-dimensional (3D) nanoarchitecture of inorganic materials is imperative for enabling their novel mechanical, optical, and electronic properties. Here, by exploiting DNA-programmable assembly, we establish a general approach for realizing designed 3D ordered inorganic frameworks. Through inorganic templating of DNA frameworks by liquid- and vapor-phase infiltrations, we demonstrate successful nanofabrication of diverse classes of inorganic frameworks from metal, metal oxide and semiconductor materials, as well as their combinations, including zinc, aluminum, copper, molybdenum, tungsten, indium, tin, and platinum, and composites such as aluminum-doped zinc oxide, indium tin oxide, and platinum/aluminum-doped zinc oxide. The open 3D frameworks have features on the order of nanometers with architecture prescribed by the DNA frames and self-assembled lattice. Structural and spectroscopic studies reveal the composition and organization of diverse inorganic frameworks, as well as the optoelectronic properties of selected materials. The work paves the road toward establishing a 3D nanoscale lithography.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Final Report: Preparation and Evaluation of N-Type CdSeTe and CdTe as an Absorber in Thin Film PV

The primary objective of this project was to demonstrate n-type CdTe and CdSeTe films prepared by in-situ doping methods using pre-doped source material. Our goal was to achieve electron density (>10 17 cm -3 ) and lifetime (>10 ns) in n-type CdTe and CdSeTe films. The focus was on indium as the dopant, as it is suitable for incorporation during melt growth of CdTe. It was thought that indium doped bulk crystals might exhibit self compensation and high resistivity, so post-growth annealing studies were planned to manipulate crystal stoichiometry, defects and electrical activity. Single crystals of CdTe:In and CdSe 0.4 Te 0.6 :In, with target In concentration 10 19 cm -3 , were grown by the vertical Bridgman crystal growth method at Washington State University (WSU). Incorporation of the intended In into the crystals was ~25%-30%, (2.5-3) ×10 18 cm -3 , according to glow discharge mass spectrometry (GDMS). Carrier concentration in CdTe:In crystals were very low until after a Cd anneal, at which point the concentration reached 8 ×10 17 cm -3 (~27% activation) according to Hall effect and time resolved photoluminescence (TRPL). CdSeTe:In, on the other hand, had ~100% carrier activation with no post-growth treatments, resulting in ~3×10 18 cm -3 carriers with a lifetime of 1.5 ns, near the radiative limit for this material.

14 SOLAR ENERGY↗
DOE OSTI2022

High Efficiency InGaN LEDs Emitting in Green, Amber and Beyond (Final Report)

This project focuses on developing high efficiency light emitting diodes (LEDs) with green, amber, and longer wavelengths using two compatible material systems based on III-nitride and II-IV-nitride semiconductor heterostructures. The proposed approach uses low-indium-content InGaN and ZnGeN 2 or ZnSnN 2 heterostructure quantum wells (QWs) as the active regions for high efficiency green and amber LEDs, and therefore to advance high efficiency color-mixed white LED technology. This approach takes advantage of the increased flexibility, afforded by the incorporation of the II-IV-nitrides into the III-nitride layers, to tune the QW active region to lower the emission wavelengths and to increase the electron-hole wave function overlap. This strategy paves a new way to extend the InGaN QW LED emission wavelength without using high-indium-content InGaN. An industrially preferable metalorganic chemical vapor deposition (MOCVD) method was used to develop the growth of ZnGeN 2 and ZnSnN 2 that are compatible with the InGaN growth. The unique dual chamber MOCVD instrument at OSU was used in this project. This program created an opportunity for the two institutions (The Ohio State University and Case Western Reserve University) with complementary expertise to perform this work. Two graduate students (Md Rezaul Karim (OSU) and Benthara Hewage Dinushi Jayatunga (CWRU)) gained experience in MOCVD growth and various characterization methods including scanning electron microscopy, x-ray diffraction spectroscopy, x-ray photoemission spectroscopy, Hall measurements, cathodoluminescence and photoluminescence. Both students successfully defended their PhD dissertations in April/May 2021. Both Karim and Jayatunga have joined Intel as engineers in June/July 2021. Another two graduate students Kaitian Zhang (OSU) and Chenxi Hu (CWRU) joined the project team since spring 2021 to continue on this project. They were trained on MOCVD epitaxy of InGaN QWs and materials characterization including SEM, AFM, PL, CL, XRD, Hall measurements and electroluminescence. A third student, Vijay Gopal Thirupakuzi Vangipuram (OSU), who joined the group in fall 2021 to perform LED fabrication and characterization. The key research accomplishments of the project include: (1) Successful development of MOCVD epitaxy of single crystalline ZnGeN 2 and ZnSnN 2 . MOCVD growth parameters that determine the stoichiometry of ZnGeN 2 and ZnSnN 2 films were identified. (2) Experimentally determined the band offsets between GaN/ZnGeN 2 and GaN/ZnGaSnN 2 hetero-interfaces, which agree very well with the theoretical predictions. (3) Demonstrated the incorporation of thin ZnGeN 2 layer in InGaN QWs. Proof-of-concept of the InGaN-ZnGeN 2 QW design demonstrated as much as 80 nm of red shift without increasing In composition or QW thickness. (4) InGaN/ZnGeN 2 QWs emitting at 480 nm achieved IQE of 47%. Resulted from this project, 7 journal articles were published, and 9 conference papers were presented.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Developing CdTe homojunctions applying high throughput deposition

In this project, we attempted to make CdTe homojunctions using single crystal p-type doped substrates and closed-space sublimation epitaxy (CSSE) n-type doped films. The project included modeling which determined the ideal thickness for the n-type layer as being <200 nm. Boules of high concentration indium-doped CdTe and CdSe 0.4 Te 0.6 (CST) were grown using modified vertical Bridgman (MVB) methods. Similarly, iodine-doped CdTe crystals were grown for the first time. Washington State University (WSU) stock phosphorus-doped CdTe was used as the p-type substrate layer. The crystals were characterized by Hall effect and time-resolved photoluminescence (TRPL, for electrical properties), photoluminescence microscopy (for uniformity), X-ray diffraction (for crystal structure), and glow discharge mass spectrometry (GDMS, for dopant and impurity concentration). CdTe:I crystals were also characterized by visible and infrared transmission measurements, and various Cd or Te heat treatments were performed to assess changes in optical and electrical properties. The grown n-type materials – CdTe:In, CdSe0.4Te0.6:In, and CdTe:I – were provided to the National Renewable Energy Laboratory (NREL) for growth of CSSE thick films for characterization by two photon TRPL (for carrier lifetime), electron back-scatter diffraction (EBSD, to assess epitaxy), and Hall effect. Several measurements of secondary ion mass spectroscopy (SIMS) were performed. Nearly 100% of the indium from the crystal was incorporated into the measured thick films, while only ~2-22% of the iodine from the crystal was incorporated. The net result of the diffusion issue is that homojunction devices created using CSSE have a buried homojunction, as indicated by the near infrared peak in the external quantum efficiency (EQE). Various parameterization of front and back contacts suggested that the poor device performance was primarily a result of this buried junction and not due to other effects. There may also be an issue with the CSSE film lifetime in addition to the dopant profile.

14 SOLAR ENERGY↗
DOE OSTI2022

Specifications of EBR-II Neutron Radiography Method Description and Digitization Approach

All neutron radiography (NRAD) images of fuel pins in Argonne’s collection were originally generated using the NRAD imaging facility established in the Hot Fuel Examination Facility (HFEF) at Idaho National Laboratory (INL). The NRAD reactor facility was built in 1977 and has been operating since. The reactor is a TRIGA-type reactor operating at a power level of 250 kWth to provide a neutron source for radiography imaging. The reactor is equipped with two beam tubes (i.e., east beam tube and north beam tube) to guide the neutron beams to two radiography stations. The east radiography station is directly under the HFEF main cell and is dedicated for specimens already in the HFEF hot cell. The north radiography station is outside of the main HFEF hot cell and allows NRAD imaging of non-irradiated items. The NRAD images of EBR-II irradiated metallic fuel pins were taken in the east radiography station. Thermal neutrons have the capability to transmit through most materials and are ideal for NRAD imaging. However, because of their high thermal neutron absorption cross-section, fissile materials (e.g., highly-enriched nuclear fuels) may not be as transmissible to thermal neutrons. This is also the case for oversize specimens with extraneous thickness. Epithermal neutron imaging is therefore used as a complement to thermal neutron NRAD imaging. At HFEF’s NRAD facility, both thermal and epithermal neutrons can be used for NRAD imaging. Irradiated nuclear fuels emit high levels of γ radiation that can easily darken X-ray films, so direct exposure NRAD cannot be used to image them. Instead, an indirect NRAD imaging method was developed at HFEF’s NRAD facility. In this method, foils made of materials that can be activated by neutrons (i.e., with large neutron absorption cross section) are used to collect transmitted neutron signals. Then the activated foils are then placed against X-ray films and enclosed in a vacuum cassette so that the γ decay from the activated foils can produce images on the X-ray films. Then, general X-ray film processing procedures are used to digitize and store the images. By using different foil materials, different energy neutrons can be used for NRAD imaging. At the HFEF NRAD station, two types of films are commonly used: dysprosium (Dy) foils with thickness of 130 microns are used to capture thermal neutron signal, while indium (In) foils with thickness of 130 microns are used to capture epithermal neutron signal. A cadmium or gadolinium foil is put before the indium foil to work as a thermal neutron filter. The thermal and epithermal NRAD images can be taken simultaneously by using a Dy/Cd/In sandwiched foil combination. The typical NRAD exposure time is approximately 20 minutes. Then the exposed foils are transferred to film vacuum cassettes. The vacuum ensures that there is no gap between the foil and the film. The foil-to-film exposure time is at least three half-lives of the corresponding radioisotopes, which are 3 hours for In and 7.5 hours for Dy, respectively. Exposed films are processed using an automatic film processor to produce completed NRAD images.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Degradation Mechanism Due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se2 Solar Cells

The impact of moisture ingress on the surface of copper indium gallium diselenide (CIGS) solar cells was studied. While industry-scale modules are encapsulated in specialized polymers and glass, over time, the glass can break and the encapsulant can degrade. During such conditions, water can potentially degrade the interior layers and decrease performance. The first layer the water will come in contact with is the transparent conductive oxide (TCO) layer. To simulate the impact of this moisture ingress, complete devices were immersed in deionized water. To identify the potential sources of degradation, a common window layer for CIGS devices—a bilayer of intrinsic zinc oxide (i-ZnO) and conductive indium tin oxide (ITO)—was deposited. The thin films were then analyzed both pre and post water soaking. To determine the extent of ingress, dynamic secondary ion mass spectroscopy (SIMS) was performed on completed devices to analyze impurity diffusion (predominantly sodium and potassium) in the devices. The results were compared to device measurements, and indicated a degradation of device efficiency (mostly fill factor, contrary to previous studies), potentially due to a modification of the alkali profile.

14 SOLAR ENERGY↗
DOE OSTI2025

Fabricating Silver Nanowire–IZO Composite Transparent Conducting Electrodes at Roll-to-Roll Speed for Perovskite Solar Cells

This study addresses the challenges of efficient, large-scale production of flexible transparent conducting electrodes (TCEs). We fabricate TCEs on polyethylene terephthalate (PET) substrates using a high-speed roll-to-roll (R2R) compatible method that combines gravure printing and photonic curing. The hybrid TCEs consist of Ag metal bus lines (Ag MBLs) coated with silver nanowires (AgNWs) and indium zinc oxide (IZO) layers. All materials are solutions deposited at speeds exceeding 10 m/min using gravure printing. We conduct a systematic study to optimize coating parameters and tune solvent composition to achieve a uniform AgNW network. The entire stack undergoes photonic curing, a low-energy annealing method that can be completed at high speeds and will not damage the plastic substrates. The resulting hybrid TCEs exhibit a transmittance of 92% averaged from 400 nm to 1100 nm and a sheet resistance of 11 Ω/sq. Mechanical durability is tested by bending the hybrid TCEs to a strain of 1% for 2000 cycles. The results show a minimal increase (<5%) in resistance. The high-throughput potential is established by showing that each hybrid TCE fabrication step can be completed at 30 m/min. We further fabricate methylammonium lead iodide solar cells to demonstrate the practical use of these TCEs, achieving an average power conversion efficiency (PCE) of 13%. The high-performance hybrid TCEs produced using R2R-compatible processes show potential as a viable choice for replacing vacuum-deposited indium tin oxide films on PET.

14 SOLAR ENERGY↗
NASA NTRS1972

Influence of alloying elements on friction and wear of copper

The friction and wear characteristics were determined for copper binary alloys containing 10 atomic percent aluminum, silicon, indium, and tin. A ternary alloy containing 10 atomic percent aluminum and 5 atomic percent silicon was also examined. The effectiveness of each of the alloying elements aluminum and silicon were very effective in reducing friction. Silicon, however, also reduced wear appreciably. With lubrication, silicon, indium, and tin were all effective alloying elements in reducing friction and wear from values obtained for copper. Silicon was the most effective single element in reducing friction and wear in dry sliding and with lubrication.

Buckley, D. H.↗
NASA NTRS1972

A Study of the Growth of Single Crystals

Research on the growth of single crystals of the III-V compound indium antimonide was pursued in order to gain a firsthand knowledge of some factors which govern the growth of single crystals of this compound. These studies were conducted using a standard Czochralski crystal pulling furnace. This type of furnace allows crystals to be formed without being constrained to a crucible. Several factors were found to have a large detrimental effect on the growth of single crystals of indium antimonide, the most important of which seems to be the degree to which the environment surrounding the crystal during growth can be controlled. Ways to overcome these effects were determined and are outlined.

Desmet, D. J.↗
NASA NTRS1972

Ultraviolet and charged particle irradiation of proposed solar cell coverslide materials and conductive coatings for the Helios spacecraft

Coverslide materials consisting of Corning 7940 fused silica, multilayers of titanium and manganese oxides (blue reflector), and indium oxide (conductive-coating) were exposed to 16 UVSC up to 800 EUVSH in vacuum. Slight changes in optical transmittance and optical absorptance were found in the (200-360) millimicron regions of the fused silica and conductive coating respectively. Exposure to 4 KeV protons and 4.5 KeV electrons in vacuum, produced decreases of several percent in transmittance, (200-360) millimicron region in the fused silicas after total fluxes less or = 10 to the 14th power particles/sq cm. Sheet resistance of the conductive coating increased above 1.0 kilo-ohm/square after a total flux less or = 10 to the 14th power particles/sq cm. Solar cells with coverglasses utilizing the indium oxide conductive coating were exposed to 1 Mev electrons and 1 Mev protons in air and in vacuum. Total fluxes ranged from 10 to the 11th power particles/sq cm to 10 to the 15th power particle/sq cm. There was no appreciable degradation in the resistance of the conductive coating during or after these tests.

Fry, J.↗
NASA NTRS1973

Application of diffusion bonding to electronic interconnection of flatpack leads

Diffusion-bonded joints between gold-plated Kovar leads and indium-plated copper circuit pads offer some advantages for electronic circuit packaging. Test results show that consistent high strength bonds stronger than the copper circuit foil are achieved by parallel-gap bonding at relatively low power settings. The bonds are basically formed by the alloying of the gold, indium and copper at the bond interface. Other low melting metals such as tin can also be used; however, tin does not offer the ease of bonding that results in consistent separation of the copper foil during pull testing. The investigation was conducted in three parts consisting of: (1) an evaluation of the physical strength of resulting bonds at ambient and elevated temperature, (2) a metallurgical analysis of bonds using scanning electron microscopy and nondispersive X-ray analysis, and (3) evaluation and development of various schemes for multiple lead flatpack bonding.

Korb, R. W.↗
NASA NTRS1974

Skylab experiments on semiconductors and alkali halides

The space processing experiments performed during the Skylab missions included one on single crystal growth of germanium selenide and telluride, one on pure and doped germanium crystals, two on pure and doped indium antimonide, one on gallium-indium-antimony systems, and one on a sodium chloride-sodium fluoride eutectic. In each experiment, three ampoules of sample were processed in the multipurpose electric furnace within the Skylab Materials Processing Facility. All were successful in varying degrees and gave important information about crystal growth removed from the effects of earth surface gravity.

Lundquist, C. A.↗
NASA NTRS1975

Skylab M518 multipurpose furnace convection analysis

An analysis was performed of the convection which existed on ground tests and during skylab processing of two experiments: vapor growth of IV-VI compounds growth of spherical crystals. A parallel analysis was also performed on Skylab experiment indium antimonide crystals because indium antimonide (InSb) was used and a free surface existed in the tellurium-doped Skylab III sample. In addition, brief analyses were also performed of the microsegregation in germanium experiment because the Skylab crystals indicated turbulent convection effects. Simple dimensional analysis calculations and a more accurate, but complex, convection computer model, were used in the analysis.

Bourgeois, S. V.↗
NASA NTRS1975

The relationship between reliability and bonding techniques in hybrid systems

Differential thermal expansion has been shown to be responsible for many observed failures in ceramic chip capacitors mounted on alumina substrates. The present work has shown that the mounting techniques used in bonding the capacitors have a marked effect upon the thermally induced mechanical stress and thus the failure rate. A mathematical analysis of a composite model of the capacitor-substrate system to predict the magnitude of thermally induced stresses has been conducted. It has been observed that the stresses in more compliant bonding systems such as soft lead/tin and indium solders are significantly lower than those in hard solder and epoxy systems. The marked dependence upon heating and cooling rate has proven to be a determining factor in the prediction of failure in both the indium and tin/lead solder systems. This study has shown that the harder or higher melting solders are less susceptible to thermal cycling effects but that they are more likely to fail during initial processing operations. Recommendations are made concerning the optimum bonding system for the achievement of maximum reliability.

Kinser, D. L.↗
NASA NTRS1977

Spar I liquid mixing experiment

The Liquid Mixing Experiment had as its objective the observation of effects of residual acceleration on a confined fluid system. The fluid system was chosen to be similar geometrically and in fluid properties to a range of materials science experiments. Samples were constructed as cylinders 2.2 cm long by 0.6 cm diameter. Half of each cylinder was composed of pure indium, and the other half of each was an alloy of 80 wt% indium and 25 wt% lead. The samples were enclosed in aluminum cartridges and placed in heaters mounted in three mutually perpendicular directions. The experimental procedure consisted of melting the samples when the low-g phase of the payload trajectory was attained, holding the samples in a molten state for approximately 200 seconds, and then quenching to resolidification before leaving low-g. Two of the samples exhibited very little fluid motion. The third sample, which was oriented nearly parallel to a payload radius, showed a great deal of flow.

Schafer, C. F.↗
NASA NTRS1977

Infrared Imagery of Shuttle (IRIS). Task 1

Assessment of available IR sensor technology showed that the four aerothermodynamic conditions of interest during the entry trajectory of space shuttle can be accommodated by an aircraft flying parallel to the orbiter reentry ground track. Thermal information from the sides of the vehicle can be obtained with degraded performance (temperatures below 800 K) by flying the C-141 aircraft on the opposite side of the shuttle ground track and in the direction opposite that which is optimum for lower surface viewing. An acquisition system using a 6.25-cm aperture telescope and a single indium antimonide detector were designed to meet the acquisition requirements and interface with the 91.5-cm telescope with minimum modification. An image plane system using 600 indium antimonide detectors in two arrays which requires no modification to the existing telescope was also designed. Currently available components were used in a data handling system with interfaces with the experimentors station and the HP2100 computer.

Chocol, C. J.↗
NASA NTRS1981

Secondary Electron Emission Yields

The secondary electron emission (SEE) characteristics for a variety of spacecraft materials were determined under UHV conditions using a commercial double pass CMA which permits sequential Auger electron electron spectroscopic analysis of the surface. The transparent conductive coating indium tin oxide (ITO) was examined on Kapton and borosilicate glass and indium oxide on FED Teflon. The total SEE coefficient ranges from 2.5 to 2.6 on as-received surfaces and from 1.5 to 1.6 on Ar(+) sputtered surfaces with 5 nm removed. A cylindrical sample carousel provides normal incidence of the primary beam as well as a multiple Faraday cup measurement of the approximately nA beam currents. Total and true secondary yields are obtained from target current measurements with biasing of the carousel. A primary beam pulsed mode to reduce electron beam dosage and minimize charging of insulating coatings was applied to Mg/F2 coated solar cell covers. Electron beam effects on ITO were found quite important at the current densities necessary to do Auger studies.

Krainsky, I.↗
NASA NTRS1981

Charging control techniques

Transparent conductive thin films of indium oxide and indium-tin oxide were evaluated for their properties to control charge buildup on satellite materials. Both oxide coatings were evaluated for their uniformity, stability, reproducibility and characteristics on various substrate materials such as FEP Teflon, Kapton, and glass. The process development toward optimization and characterization of these thin semiconductor oxide coatings and the evaluation on large sizes performed for qualification for use on thermal control satellite materials is described. The materials have been characterized in multiple energy electron plasma environment and at low temperatures. All radiation measurements of the coatings under simulated substorm conditions have exhibited the characteristics of stable charge control. Measurement of surface potential during and after irradiation by electrons up to 30 KeV and ionizing gamma radiation show an effective stable grounding surface.

Schmidt, R. E.↗