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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

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NASA NTRS1985

Accelerators for critical experiments involving single-particle upset in solid-state microcircuits

Charged-particle interactions in microelectronic circuit chips (integrated circuits) present a particularly insidious problem for solid-state electronic systems due to the generation of soft errors or single-particle event upset (SEU) by either cosmic rays or other radiation sources. Particle accelerators are used to provide both light and heavy ions in order to assess the propensity of integrated circuit chips for SEU. Critical aspects of this assessment involve the ability to analytically model SEU for the prediction of error rates in known radiation environments. In order to accurately model SEU, the measurement and prediction of energy deposition in the form of an electron-hole plasma generated along an ion track is of paramount importance. This requires the use of accelerators which allow for ease in both energy control (change of energy) and change of ion species. This and other aspects of ion-beam control and diagnostics (e.g., uniformity and flux) are of critical concern for the experimental verification of theoretical SEU models.

Zoutendyk, J. A.↗
NASA NTRS1986

Space Station technology experiments and uses

The use of the proposed Space Station for technological experimentation is discussed. The general objectives and capabilities of the Station and the status of planning are reviewed; the external and internal environmental conditions at the 500-km 28.5-deg-inclination Station orbit are described; and six conceptual Technology Development Missions designed by NASA and included in the Mission Requirements Data Base are briefly characterized and illustrated with drawings. The missions considered concern spacecraft-materials performance, solar dynamic power, data transfer and processing microelectronics, long-term cryogenic-fluid storage, active-optics technology, and cryogenic-propellant transfer, storage, and reliquefaction.

Breckenridge, R. A.↗
NASA NTRS1986

Diamondlike carbon films on semiconductors for insulated-gate technology

MIS structures are fabricated on p-type InP, GaAs, and Si substrated by direct ionization of 25-percent CH4 in Ar and ion-beam deposition of 70-nm-thick diamondlike films, followed by application of Al gate electrodes and ohmic contacts. The films are found to have bandgap 0.9-1.1 eV, resistivity 8.1 Mohm cm, breakdown field strength 1 MV/cm, and density 1.8 g/cu cm, to be thermally stable up to 400 C, and to undergo rapid decomposition above 450 C. The electrical properties of the MIS structures are significantly improved by sputter cleaning the substrates with a 1-keV 2-mA/sq cm Ar beam for 2 min at 300 microtorr prior to C-film deposition. The resulting structures have fixed insulator charge number densities 4 x 10 to the 12th/sq cm (InP), 7.5 x 10 to the 12th/sq cm (GaAs), and 9 x 10 to the 11th/sq cm (Si) and interface state densities (5, 200, and 0.5) x 10 to the 12th/ sq cm eV, respectively. It is suggested that the low optical bandgap and resistivity of the C films and the high insulator-charge and interface-state densities make them unstable as gate dielectrics for microelectronics.

Kapoor, V. J.↗
NASA NTRS1986

Space Station and technology experiments

The space technology experiments to be performed on the Space Station are discussed. The characteristics of the dual keel Station, which contains modules for habitation, logistics, and laboratories, applicable to technology experiments are described. Experiments utilizing the initial Space Station design include: (1) assessing the instrumented Space Station, (2) the testing of spacecraft materials and coatings, and (3) a microelectronics data system experiment; the objectives and procedures for these studies are examined. With increases in the number of modules, and electrical power and OTV capabilities, the evaluation of teleoperated techniques, the development and testing of a diversified antenna near- and far-field measurement facility, the study of cryogenic propellant transfer, and storage, and the implementation of a large concentrator in space are possible; descriptions of these proposed experiments are provided.

Breckenridge, R. A.↗
NASA NTRS1987

Microscopic Gas-Flow Controller

Proposed flow-controlling and -measuring device made by batch solid-state microelectronic-fabrication techniques. Device contains ultrasensitive silicon capacitive pressure transducer, gas-flow channels etched in silicon wafer, and integrated microvalves. Used to control and monitor low gas flows at low pressures.

Wise, Kensall D.↗
NASA NTRS1986

Atmospheric electrical modeling in support of the NASA F106 Storm Hazards Project

With the use of composite (non-metallic) and microelectronics becoming more prevalent in the construction of both military and commercial aircraft, the control systems have become more susceptible to damage or failure from electromagnetic transients. One source of such transients is the lightning discharge. In order to study the effects of the lightning discharge on the vital components of an aircraft, NASA Langley Research Center has undertaken a Storm Hazards Program in which a specially instrumented F106B jet aircraft is flown into active thunderstorms with the intention of being struck by lightning. One of the specific purposes of the program is to quantify the environmental conditions which are conductive to aircraft lightning strikes.

Helsdon, J. H.↗
NASA NTRS1986

Physics through the 1990s: Scientific interfaces and technological applications

The volume examines the scientific interfaces and technological applications of physics. Twelve areas are dealt with: biological physics-biophysics, the brain, and theoretical biology; the physics-chemistry interface-instrumentation, surfaces, neutron and synchrotron radiation, polymers, organic electronic materials; materials science; geophysics-tectonics, the atmosphere and oceans, planets, drilling and seismic exploration, and remote sensing; computational physics-complex systems and applications in basic research; mathematics-field theory and chaos; microelectronics-integrated circuits, miniaturization, future trends; optical information technologies-fiber optics and photonics; instrumentation; physics applications to energy needs and the environment; national security-devices, weapons, and arms control; medical physics-radiology, ultrasonics, MNR, and photonics. An executive summary and many chapters contain recommendations regarding funding, education, industry participation, small-group university research and large facility programs, government agency programs, and computer database needs.

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NASA NTRS1988

Fluidized-Bed Deposition Of Single-Crystal Silicon

Uniformly thin single-crystal films of silicon produced by modification of fluidized-bed-reactor technique producing polysilicon by chemical vapor deposition. Proposed for silicon wafers for flat-plate solar arrays and results in different structural and electronic properties in deposition layer desirable for specific microelectronic or solar-cell processing. In process deposition occurs on silicon wafers, kept individually at temperatures above 1,000 degree C. Heated wafers held in unheated and minimally-agitated-fluidized bed of silicon particles and in low concentration of silane.

Hsu, George C.↗
NASA NTRS1988

Interfacial adhesion: Theory and experiment

Adhesion, the binding of different materials at an interface, is of general interest to many branches of technology, e.g., microelectronics, tribology, manufacturing, construction, etc. However, there is a lack of fundamental understanding of such diverse interfaces. In addition, experimental techniques generally have practical objectives, such as the achievement of sufficient strength to sustain mechanical or thermal effects and/or have the proper electronic properties. In addition, the theoretical description of binding at interfaces is quite limited, and a proper data base for such theoretical analysis does not exist. This presentation will review both experimental and theoretical aspects of adhesion in nonpolymer materials. The objective will be to delineate the critical parameters needed, governing adhesion testing along with an outline of testing objectives. A distinction will be made between practical and fundamental objectives. Examples are given where interfacial bonding may govern experimental consideration. The present status of theory is presented along wiith recommendations for future progress and needs.

Ferrante, John↗
NASA NTRS1988

Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

An analysis is made of the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. It is found that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TEo guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.

Kurdi, B. N.↗
NASA NTRS1988

Microwave and millimeter-wave resonant-tunneling devices

Resonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.

Sollner, T. C. L. Gerhard↗
NASA NTRS1988

A molecular shift register based on electron transfer

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

Hopfield, J. J.↗
NASA NTRS1988

Commercial aspects of epitaxial thin film growth in outer space

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

Ignatiev, Alex↗
NASA NTRS1989

Molecular-Beam Epitaxy Of CrSi2 on Si(111)

Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.

Fathauer, Robert W.↗
NASA NTRS1987

Robot design for a vacuum environment

The cleanliness requirements for many processing and manufacturing tasks are becoming ever stricter, resulting in a greater interest in the vacuum environment. Researchers discuss the importance of this special environment, and the development of robots which are physically and functionally suited to vacuum processing tasks. Work is in progress at the Center for robotic Systems in Microelectronics (CRSM) to provide a robot for the manufacture of a revolutionary new gyroscope in high vacuum. The need for vacuum in this and other processes is discussed as well as the requirements for a vacuum-compatible robot. Finally, researchers present details on work done at the CRSM to modify an existing clean-room compatible robot for use at high vacuum.

Belinski, S.↗
NASA NTRS1988

Interplanetary Particle Environment. Proceedings of a Conference

A workshop entitled the Interplanetary Charged Particle Environment was held at the Jet Propulsion Laboratory (JPL) on March 16 and 17, 1987. The purpose of the Workshop was to define the environment that will be seen by spacecraft operating in the 1990s. It focused on those particles that are involved in single event upset, latch-up, total dose and displacement damage in spacecraft microelectronic parts. Several problems specific to Magellan were also discussed because of the sensitivity of some electronic parts to single-event phenomena. Scientists and engineers representing over a dozen institutions took part in the meeting. The workshop consisted of two major activities, reviews of the current state of knowledge and the formation of working groups and the drafting of their reports.

Feynman, Joan↗
NASA NTRS1988

Current models of the intensely ionizing particle environment in space

The Cosmic Ray Effects on MicroElectronics (CREME) model that is currently in use to estimate single event effect rates in spacecraft is described. The CREME model provides a description of the radiation environment in interplanetary space near the orbit of the earth that contains no major deficiencies. The accuracy of the galactic cosmic ray model is limited by the uncertainties in solar modulation. The model for solar energetic particles could be improved by making use of all the data that has been collected on solar energetic particle events. There remain major uncertainties about the environment within the earth's magnetosphere, because of the uncertainties over the charge states of the heavy ions in the anomalous component and solar flares, and because of trapped heavy ions. The present CREME model is valid only at 1 AU, but it could be extended to other parts of the heliosphere. There is considerable data on the radiation environment from 0.2 to 35 AU in the ecliptic plane. This data could be used to extend the CREME model.

Adams, James H., Jr.↗