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382 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Laser–plasma amplification of an ultrabroadband laser pulse to 0.3 TW

Producing on-target laser intensities much greater than 10 23 W cm −2 with current laser technologies is a roadblock to accessing new regimes of physics such as strong-field quantum electrodynamics. Laser–plasma amplifiers show promise to realize these intensities by augmenting the final amplifier and compressor in traditional chirped-pulse-amplification architectures with a plasma-based amplification and compression stage that operates at a much higher damage threshold. Here we demonstrate amplification of an ultrabroadband (>60 nm) pulse in a laser–plasma Raman amplifier. We directly amplified seed intensities up to 3.7 × 10 15 W cm −2 and measured efficiencies up to 8.7%. Single-shot SPIDER measurements show a factor-of-2 reduction in the amplified pulse duration with final powers up to 0.3 TW, a 10× improvement over previous results. Final pulse durations of 64 fs are measured. Energy transfers greater than 220 mJ from the picosecond pump into the seed result in a 30× energy amplification of a 7.6 mJ seed. These results set the stage for a compact plasma afterburner based on Raman amplification that could extend the scientific capability of existing petawatt-class laser facilities to enable experiments at the intensity frontier.

Shaw, J. L. [Univ. of Rochester, NY (United States↗
DOE OSTI2024

Dark energy survey year 3 results: likelihood-free, simulation-based w CDM inference with neural compression of weak-lensing map statistics

We present simulation-based cosmological wcold dark matter (wCDM) inference using dark energy survey year 3 weak-lensing maps, via neural data compression of weak-lensing map summary statistics: power spectra, peak counts, and direct map-level compression/inference with convolutional neural networks (CNN). Using simulation-based inference, also known as likelihood-free or implicit inference, we use forward-modelled mock data to estimate posterior probability distributions of unknown parameters. This approach allows all statistical assumptions and uncertainties to be propagated through the forward-modelled mock data; these include sky masks, non-Gaussian shape noise, shape measurement bias, source galaxy clustering, photometric redshift uncertainty, intrinsic galaxy alignments, non-Gaussian density fields, neutrinos, and non-linear summary statistics. We include a series of tests to validate our inference results. This paper also describes the Gower Street simulation suite: 791 full-sky pkdgrav3 dark matter simulations, with cosmological model parameters sampled with a mixed active-learning strategy, from which we construct over 3000 mock dark energy survey lensing data sets. For wCDM inference, for which we allow –1 < w < –$\frac{1}{3}$⁠, our most constraining result uses power spectra combined with map-level (CNN) inference. Using gravitational lensing data only, this map-level combination gives Ω m = 0.283$^{+0.020}_{–0.027}$⁠, S 8 = 0.804$^{+0.025}_{–0.017⁠}$, and w < –0.80 (with a 68 per cent credible interval); compared to the power spectrum inference, this is more than a factor of two improvement in dark energy parameter (Ω⁠ DE , w⁠) precision.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2026

Weak Lensing Mass Calibration of the ACT DR5 Galaxy Clusters with the DES Year 3 Weak Lensing Data

We use weak gravitational lensing measurements from Year 3 Dark Energy Survey data to calibrate the masses of 443 galaxy clusters selected via the Sunyaev-Zel'dovich effect from Atacama Cosmology Telescope Data Release 5 maps of the cosmic microwave background. We incorporate redshift and SZ measurements for individual clusters into a hierarchical model for the stacked lensing signals and perform Bayesian analyses to constrain the hydrostatic mass bias of the clusters. Our treatment of systematic uncertainties includes a prescription for measuring and accounting for the weak lensing boost factor, consideration of a miscentering effect, as well as marginalization over uncertainties in the source galaxy photometric redshift distributions and shear calibration. The resultant constraints on the normalization of the mass-observable relation have a precision of approximately 7%, with the mean WL halo mass of M $_{500c}$ = 5.4 × 10$^{14}$ M $_{⊙}$. We measure the bias between the true cluster mass and the mass estimated from the SZ signal based on an X-ray-calibrated scaling relation assuming hydrostatic equilibrium, to be 1 - b = 0.74$^{+0.06}$ $_{-0.05}$ over the full sample. When splitting the clusters into high (z = 0.43-0.70) and low (z = 0.15-0.43) redshift bins, we measure 1 - b = 0.58$^{+0.06}$ $_{-0.05}$ and 0.81$^{+0.08}$ $_{-0.06}$, respectively. When introducing additional freedom in redshift and mass to the hydrostatic bias model, we find that 1 - b decreases with redshift (with the power law of -1.8$^{+0.5}$ $_{-0.6}$, 99.95% confidence), consistent with findings from other recent studies, while we do not find any significant trend in mass. We also demonstrate that our result is robust against various systematics such as a scale cut, priors on baryonic and miscentering parameters, and degree of scatter in mass-observable relation. The weak-lensing mass calibration presented in this study will be a useful tool for using the ACT clusters as probes of astrophysics, and as a step towards using their abundance as a cosmological probe.

Shin, T. [Carnegie Mellon U.] (ORCID:0000000263895↗