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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Li, S. S.↗
NASA NTRS1984

Interaction between boron and intrinsic defects in GaAs

A model has been developed to describe the interaction between boron and antisite defects in bulk grown undoped liquid uncapsulated Czochralski GaAs. This model helps explain the observed experimental behavior. The model indicates that the residual double acceptor can most likely be associated with either Ga(As) or B(As).

Elliott, K. R.↗
NASA NTRS1985

Low defect, high purity crystalline layers grown by selective deposition

The purity and perfection of a semiconductor is improved by depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities.

Morrison, A. D.↗
NASA NTRS1985

Defect-phase-dynamics approach to statistical domain-growth problem of clock models

The growth of statistical domains in quenched Ising-like p-state clock models with p = 3 or more is investigated theoretically, reformulating the analysis of Ohta et al. (1982) in terms of a phase variable and studying the dynamics of defects introduced into the phase field when the phase variable becomes multivalued. The resulting defect/phase domain-growth equation is applied to the interpretation of Monte Carlo simulations in two dimensions (Kaski and Gunton, 1983; Grest and Srolovitz, 1984), and problems encountered in the analysis of related Potts models are discussed. In the two-dimensional case, the problem is essentially that of a purely dissipative Coulomb gas, with a sq rt t growth law complicated by vertex-pinning effects at small t.

Kawasaki, K.↗
NASA NTRS1985

EL2 and related defects in GaAs - Challenges and pitfalls

The incorporation process of nonequilibrium vacancies in melt-grown GaAs is strongly complicated by deviations from stoichiometry and the presence of two sublattices. Many of the microdefects originating in these vacancies and their interactions introduce energy levels (shallow and deep) within the energy gap. The direct identification of the chemical or structural signature of these defects and its direct correlation to their electronic behavior is not generally possible. It is necessary, therefore, to rely on indirect methods and phenomenological models and deal with the associated pitfalls. EL2, a microdefect introducing a deep donor level, has been in the limelight in recent years because it is believed to be responsible for the semi-insulating behavior of undoped GaAs. Although much progress has been made towards understanding its origin and nature, some relevant questions remain unanswered. An attempt is made to assess the present status of understanding of EL2 in the light of most recent results.

Gatos, H. C.↗
NASA NTRS1985

Studies of oxygen-related and carbon-related defects in high-efficiency solar cells

Oxygen and carbon related defects in silicon, particularly as related to high-efficiency silicon solar cells were studied. A summary of oxygen processes in silicon versus process temperature was shown along with experimental results. The anamolous diffusion of oxygen was explained by the dissociation of the center allowing O sub i to move through the lattices.

Corbett, J. W.↗
NASA NTRS1985

Defect characterization of silicon dendritic web ribbons

Progress made in the study of defect characterization of silicon dendritic web ribbon is presented. Chemical etching is used combined with optical microscopy, as well as the electron beam induced current (EBIC) technique. Thermal annealing effect on carrier lifetime is examined.

Cheng, L. J.↗
NASA NTRS1985

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.

Lagowski, J.↗
NASA NTRS1985

Current collection from the space plasma through defects in solar array insulation

Operating high-voltage solar arrays in the space environment can result in anomalously large currents being collected through small insulation defects. Tests simulating the electron collection have shown that there are two major collection modes. The first involves current enhancement by means of a surface phenomenon involving secondary electron emission from the surrounding insulator. In the second mode, the current collection is enhanced by vaporization and ionization of the insulator material, in addition to the surface enhancement of the first mode. The electron collection due to surface enhancement (first mode) has been modeled. Using this model, simple calculations yield realistic predictions.

Robinson, R. S.↗
NASA NTRS1985

EL2 and related defects in GaAs - Challenges and pitfalls

The incorporation process of nonequilibrium vacancies in melt-grown GaAs is strongly complicated by deviations from stoichiometry, and the presence of two sublattices. Many of the microdefects originating in these vacancies and their interactions introduce energy levels (shallow and deep) within the energy gap. The direct identification of the chemical or structural signature of these defects and its direct correlation to their electronic behavior is not generally possible. It is therefore necessary to rely on indirect methods and phenomenological models and be confronted with the associated pitfalls. EL2, a microdefect introducing a deep donor level, has been in the limelight in recent years because it is believed to be responsible for the semi-insulating behavior of undoped GaAs. Although much progress has been made towards understanding its origin and nature, some relevant questions remain unanswered. An attempt is made to assess the present status of understanding of EL2 in the light of the most recent results.

Gatos, H. C.↗
NASA NTRS1986

Process-induced defects in solar cell silicon

The microstructure of as-grown and processed, edge-defined film-fed grown, silicon ribbons was studied in order to identify the basic mechanisms responsible for the change of the as-grown defect structure during processing at elevated temperatures. The short heat treatment required to diffuse the p-n junction was sufficient to cause heterogeneous precipitation of impurity atoms, particularly transition metals. In addition, an elastic recovery of the ribbon occurred by dislocation glide, resulting in the formation of a polygonizationlike structure of subboundaries in the base. Mechanisms are suggested by which twin boundaries, acting as dislocation obstacles, can concentrate the relatively low average dislocation densities typical of edge-defined film-fed grown ribbons (10 to the 4th to 10 to the 8th/sq cm) to values which are sufficient to induce the formation of subgrainlike boundary structures.

Gleichmann, R.↗
NASA NTRS1986

Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

Bhattacharya, P. K.↗
NASA NTRS1987

Defects in nickel-base superalloys

The presence of substantial amounts of the sigma phase in Ni-base superalloys can drastically reduce the alloy's stress rupture life. No predictive system exists which is entirely successful in anticipating the formation of sigma, mu, and similar phases in new and substantially different alloys. Freckles are defects due to the segregation of elements in quantities that can lead to phase precipitation, and are caused by gravity-driven fluid motion that yields microsegregation in the ingots typically used in the fabrication of structures based on these alloys. Also noted are the effects of porosity and grain boundaries on superalloy mechanical properties.

Dreshfield, Robert L.↗
NASA NTRS1988

A calorimetric determination of the enthalpy of formation and a description of the defect structure of the ordered beta-phase /Ni, Cu/ /1-x/ Al/x/

In order to describe thermodynamically the defect structure of an ordered B-Hume-Rothery phase, the heat of formation of (Ni,Cu)(1-x)Al(x) was measured at 1100 K as a function of concentration in the range x (sub Al) = 0.4 and 0.55 for three substitution rations x (sub Ni)/x (sub Cu) = infinity; 11; 5. The heat of formation of the NiAl beta-phase is strongly negative. For the stoichiometric composition it is -72.2 kJ/g-atom. On both the nickel-rich side and the aluminum-rich side the magnitude of the enthalpy of formation decreases linearly with concentration. Substitution of nickel for copper decreases the magnitude of the enthalpy of formation over the entire homogeneity range for the phase (Ni,Cu)(1-x)Al(x). The curve for the enthalpy of formation as well as the literature values for the chemical potential of aluminum are described with great accuracy by the disorder model of Wagner-Schottky.

Henig, E. T.↗
NASA NTRS1988

A defect stream function, law of the wall/wake method for turbulent boundary layers

The application of the defect stream function to the solution of the two-dimensional, incompressible boundary layer problem is reexamined. A law-of-the-wall/law-of-the-wake formulation for the inner part of the boundary layer is presented which greatly simplifies the computational task near the wall and eliminates the need for an eddy viscosity model in this region. The eddy viscosity model in the outer part of the boundary layer is arbitrary. Formulations for both equilibrium and nonequilibrium boundary layers are presented, and results are compared with previous methods for equilibrium boundary layers. A formulation for primitive variables is presented. The present treatments eliminate the need for resolving the flow in the inner part of the boundary layer computationally, thereby improving computational efficiency.

Barnwell, Richard W.↗
NASA NTRS1987

Lattice defects in beta-SiC grown epitaxially on silicon substrates

Defects generated on beta-SiC grown on a (001) silicon substrate by chemical vapor deposition are characterized and their mechanism of formation discussed. It is argued that nucleation plays a primary role in this heteroepitaxial system where the lattice mismatch is so large.

Pirouz, P.↗
NASA NTRS1989

Acoustical Imaging Of Defects In Ceramics

Because of their brittle nature, ceramics are extremely sensitive to even slight variations in microstructure. Direct observations show importance of kinds of defects by identifying them as sites of localized failures. Sites cannot be determined priori by optical and x-ray methods. Color images obtained from precise acoustic measurements reveal subtle variations in porosity fractions and mean sizes of pores in ceramics. Velocity and attenuation of ultrasound found related directly to density and mean size of pores, respectively.

Generazio, Edward R.↗