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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS 2

Defect engineering of van der Waals semiconductors has been demonstrated as an effective approach to manipulate the structural and functional characteristics toward dynamic device controls, yet correlations between physical properties with defect evolution remain underexplored. Here, using proton irradiation, we observe an enhanced exciton-to-trion conversion of the atomically thin WS 2 . The altered excitonic states are closely correlated with nanopore induced atomic displacement, W nanoclusters, and zigzag edge terminations, verified by scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. Density functional theory calculation suggests that nanopores facilitate formation of in-gap states that act as sinks for free electrons to couple with excitons. The ion energy loss simulation predicts a dominating electron ionization effect upon proton irradiation, providing further evidence on band perturbations and nanopore formation without destroying the overall crystallinity. This study provides a route in tuning the excitonic properties of van der Waals semiconductors using an irradiation-based defect engineering approach.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Offsite Source Recovery Program; High Activity Beta Gamma Removal, Transport and Disposition - 19663

The Department of Energy's (DOE) National Nuclear Security Administration's (NNSA) Office of Radiological Security's (ORS) Off-Site Source Recovery Program (OSRP) has been tasked with the removal and disposition of radioactive sealed sources in the interest of national security and public health and safety. It is the mission of the program to recover radioactive sources to prevent them from falling into the hands of individuals who would use this material for malicious intent. OSRP is a collaborative effort involving Los Alamos National Laboratory (LANL), Idaho National Laboratory (INL), and Lawrence Livermore National Laboratory (LLNL). At the inception of the program, Pu-239 was the only isotope acceptable for recovery. As a wider security scope developed, OSRP expanded its mission to include the recovery of other sources that posed a potential risk to national security, health, and safety. Starting in 2004, OSRP began recovering cesium and cobalt devices, largely from medical, research, and industrial facilities. These disused higher-activity devices present a burden to licensees in terms of security, and demand for OSRP's assistance in removing them has been high. Today, OSRP removes around 40 high-activity devices per year in support of domestic demand as well as ORS's Cesium Irradiator Replacement Project (CIRP). This represents an average of over 50,000 Ci of Cs-137 and Co-60 removed from the private sector each year for permanent disposition. A major component of this effort is the use of the proper shipping container to transport the devices. As a way to increase transportation capabilities ORS has developed two new Type B containers. The most recently completed of these containers, the 435-B, is currently certified to transport Gammators and Gammacell-1000, -3000, and -40 irradiators in an overpack configuration. This provides greater capacity and flexibility to safely and effectively transport these devices, for which acceptable shipping configurations had been previously limited. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2014

Crystallographic changes in lead zirconate titanate due to neutron irradiation

Piezoelectric and ferroelectric materials are useful as the active element in non-destructive monitoring devices for high-radiation areas. Here, crystallographic structural refinement (i.e., the Rietveld method) is used to quantify the type and extent of structural changes in PbZr 0 .5 Ti 0 .5 O 3 after exposure to a 1 MeV equivalent neutron fluence of 1.7 × 10 15 neutrons/cm 2 . The results show a measurable decrease in the occupancy of Pb and O due to irradiation, with O vacancies in the tetragonal phase being created preferentially on one of the two O sites. The results demonstrate a method by which the effects of radiation on crystallographic structure may be investigated.

36 MATERIALS SCIENCE↗
NASA NTRS1993

The Large Area Pulsed Solar Simulator (LAPSS)

A Large Area Pulsed Solar Simulator (LAPSS) has been installed at JPL. It is primarily intended to be used to illuminate and measure the electrical performance of photovoltaic devices. The simulator, originally manufactured by Spectrolab, Sylmar, California, occupies an area measuring about 3 meters wide by 12 meters long. The data acquisition and data processing subsystems have been modernized. Tests on the LAPSS performance resulted in better than +/- 2 percent uniformity of irradiance at the test plane and better than +/- 0.3 percent measurement repeatability after warm-up. Glass absorption filters are used to reduce the level of ultraviolet light emitted from the xenon flash lamps. This provides a close match to standard airmass zero and airmass 1.5 spectral irradiance distributions. The 2 millisecond light pulse prevents heating of the device under test, resulting in more reliable temperature measurements. Overall, excellent electrical performance measurements have been made of many different types and sizes of photovoltaic devices.

Mueller, R. L.↗
DOE OSTI2023

Analysis of humidity sensitivity of silicon strip sensors for ATLAS upgrade tracker, pre- and post-irradiation

During the prototyping phase of the new ATLAS Inner-Tracker (ITk) strip sensors, a degradation of the device breakdown voltage at high humidity was observed. Although the degradation was temporary, showing a fast recovery in dry conditions, the study of the influence of humidity on the sensor performance was critical to establish counter-measures and handling protocols during production testing in order to ensure the proper performance of the upgraded detector. The work presented here has the objective to study for the first time the breakdown voltage deterioration in presence of ambient humidity of ATLAS ITk production-layout strip sensors with different surface properties, before and after proton, neutron and gamma irradiations. A study of the humidity sensitivity of miniature ATLAS ITk strip sensors, before and after proton irradiations, is also presented to compare the sensitivity of devices with different sizes. The sensors were also exposed for several days to high humidity with the aim to recreate and evaluate the influence of the detector integration environment expected during the Large Hadron Collider (LHC) Long Shutdown 3 (LS3) in 2026, where the sensors will be exposed to ambient humidity for prolonged times.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

TU-FG-BRB-01: Dual Energy CT Proton Stopping Power Ratio Calibration and Validation with Animal Tissues

Purpose: The conversion of Hounsfield Unit (HU) to proton stopping power ratio (SPR) is a main source of uncertainty in proton therapy. In this study, the SPRs of animal tissues were measured and compared with prediction from dual energy CT (DECT) and single energy CT (SECT) calibrations. Methods: A stoichiometric calibration method for DECT was applied to predict the SPR using CT images acquired at 80 kVp and 140 kVp. The dual energy index was derived based on the HUs of the paired spectral images and used to calculate the SPRs of the materials. Tissue surrogates with known chemical compositions were used for calibration, and animal tissues (pig brain, liver, kidney; veal shank, muscle) were used for validation. The materials were irradiated with proton pencil beams, and SPRs were deduced from the residual proton range measured using a multi-layer ion chamber device. In addition, Gafchromic EBT3 films were used to measure the distal dose profiles after irradiation through the tissue samples and compared with those calculated by the treatment planning system using both DECT and SECT predicted SPRs. Results: The differences in SPR between DECT prediction and measurement were −0.31±0.36% for bone, 0.47±0.42% for brain, 0.67±0.15% for liver, 0.51±0.52% for kidney, and −0.96±0.15% for muscle. The corresponding results using SECT were 3.1±0.12%, 1.90±0.45%, −0.66±0.11%, 2.33±0.21%, and −1.70±0.17%. In the film measurements, average distances between film and calculated distal dose profiles were 0.35±0.12 mm for DECT calibration and −1.22±0.12 mm for SECT calibration for a beam with a range of 15.79 cm. Conclusion: Our study indicates that DECT is superior to SECT for proton SPR prediction and has the potential to reduce the range uncertainty to less than 2%. DECT may permit the use of tighter distal and proximal range uncertainty margins for treatment, thereby increasing the precision of proton therapy.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped material is unavailable and full devices are difficult to realize. Herein, temperature‐dependent Hall effect measurements are used to demonstrate α particle‐induced radiation effects in p‐type 4H‐SiC with a room temperature hole concentration of . The 4H‐SiC is irradiated by α particles from a 210 Po source over a fluence of –. Modeling the hole concentration as a function of temperature shows that α radiation causes hole compensation through the introduction of hole traps. The radiation also induces a reduction in hole mobility due to an increase in defect‐related scattering centers. At low temperatures and increasingly higher fluences, the conduction mechanism changes from band conduction to another mechanism.

Frye, Clint D.↗
DOE OSTI2024

Selective modulation of electronic transport in VO 2 induced by 10 keV helium ion irradiation

Vanadium dioxide (VO 2 ) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO 2 , as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO 2 films subject to different 10 keV helium ion (He + ) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO 2 /Si vs single crystal Al 2 O 3 ). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO 2 transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping.

36 MATERIALS SCIENCE↗
DOE OSTI2021

An in-depth field validation of “DUSST”: A novel low-maintenance soiling measurement device

This study presents indoor and field validation results for two versions of the “DUSST” optical soiling sensor, intended to be a low-cost and low-maintenance device for measuring photovoltaic soiling losses. Indoor testing covers irradiance calibration and temperature dependencies, which are necessary to achieve high accuracy, low uncertainty field measurements. Field testing includes an array of different environments including Saudi Arabia, California, Utah, and Colorado. DUSST versions include a configuration with a 530-nm light emitting diode (LED) (discussed in previous work) and a unit with seven white LEDs and a polycarbonate collimating optic. The new design increases light intensity fivefold and demonstrates a single linear calibration coefficient is effective to measure soiling losses as high as 75%. Field data from Utah and California demonstrate that daily soiling loss measurements and soiling rate calculations closely match both reference cell and full-size module measurements of soiling losses and soiling rates. Corrective methods employed on the Utah DUSST sensor suggest that it is possible to achieve measurement errors as low as ±0.1% at two standard deviations. Field data from both Colorado and Saudi Arabia demonstrate that LED lens soiling can occur and that further design optimizations are needed. The lesson learned from all the field deployment locations suggests directions for future design improvements.

14 SOLAR ENERGY↗
DOE OSTI2021

Outdoor performance of a tandem InGaP/Si photovoltaic luminescent solar concentrator

Here, we report the design, fabrication and outdoor characterization of a tandem luminescent solar concentrator/Si multi-junction photovoltaic module. Our tandem LSC/Si device consists of an InGaP LSC functioning as a top cell and a passivated contact Si bottom cell. The LSC comprises of an InGaP microcell array coupled to a polymer waveguide, loaded with CdSe/CdS core-shell quantum dot luminophores. The light trapping efficiency of the LSC waveguide is enhanced by encapsulation with photoluminescence trapping mirrors consisting of dielectric multilayer thin films. We demonstrate the performance of the LSC/Si device through a series of outdoor tests under various irradiance conditions conducted at the National Renewable Energy Laboratory. We report the first outdoor testing data of an LSC/Si tandem module, displaying maintained performance across varied diffusivity conditions for the LSC component. Finally, we model the tandem module performance using a ray optic simulation-based multiphysics model and forecast a pathway for high efficiency tandem LSC/Si module performance.

14 SOLAR ENERGY↗
DOE OSTI2016

Magnetic reconnection driven by Gekko XII lasers with a Helmholtz capacitor-coil target

We demonstrate a novel plasma device for magnetic reconnection, driven by Gekko XII lasers irradiating a double-turn Helmholtz capacitor-coil target. Optical probing revealed an accumulated plasma plume near the magnetic reconnection outflow. The background electron density and magnetic field were measured to be approximately 10{sup 18 }cm{sup −3} and 60 T by using Nomarski interferometry and the Faraday effect, respectively. In contrast with experiments on magnetic reconnection constructed by the Biermann battery effect, which produced high beta values, our beta value was much lower than one, which greatly extends the parameter regime of laser-driven magnetic reconnection and reveals its potential in astrophysical plasma applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1982

Radiation-induced defects in SiO2 as determined with XPS

An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density and electron mean free path as a function of depth, for the cases of device-quality gate oxides grown on Si substrates and irradiated with zero to 20 eV electrons during in situ X-ray photoelectron spectroscopy. These structures had been thinned stepwise to 25-60 A by means of a wet chemical depth-profiling procedure. Si(3+) species are formed in the Si/SiO2 interface region, and their observation during their relaxation and annihilation is correlated with strained Si-O-Si bonds. The observation of bond of cleavage and bond strain gradients in these samples is used to extend silica devitrification models for the explanation of fixed oxide charge generation and interface states.

Grunthaner, F. J.↗
NASA NTRS2017

Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB

Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

total ionizing dose (TID)↗
NASA NTRS2017

LM193 Dual Differential Comparator Total Ionizing Dose Test Report

The purpose of this test was to characterize the flight lot of Texas Instruments' LM193 (flight part number is 5962-9452601Q2A) for total dose response. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) was determined.

enhanced low dose rate sensitivity (ELDRS↗
NASA NTRS2020

Total Ionizing Dose Test of Silicon Switching Transistors JANTXV2N2222AUB

Semicoa's silicon switching transistors, JANTXV2N2222AUB was tested for total ionizing dose (TID) response beginning on November 4, 2019. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Campola, M.↗
NASA NTRS2020

U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.

Total Ionizing Dose (TID)↗
NASA NTRS2015

Heavy Ion Test Results of the Vishay DG403DY-E3 Analog Switch

This study was undertaken to determine the Single Event Latchup (SEL) susceptibility of the Vishay DG403DY-E3 (Analog Switch). The device was under a biased and switching configuration during irradiation and continuously monitored for destructive events. The parts were tested at the Lawrence Berkeley National Laboratory 88 inch cyclotron facility

Single Event Latchup (SEL)↗