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High-efficiency solar cells made in thin epitaxial films grown on low-cost commercial silicon substrates. Cost of cells is much less than if high-quality single-crystal silicon were used for substrates and performance of cells is almost as good.
Web dendrite growth process pulls sheet of newly crystallized silicon from molten silicon. Jets of argon pull outside gas into melt cavity, preventing silicon oxide from passing through heat-shield hold and depositing on it. Generated by aspirators, reversed flow is used in web dendrite process, which produces sheets of single-crystal silicon for low-cost solar cells.
To achieve the program goals, 28 minimodules were fabricated and tested, using 600 cells made from three-inch-diameter wafers processed by the sequence chosen for this purpose. Of these 600 cells, half were made from epitaxially grown layers on potentially low-cost substrates. The other half were made from commercial semiconductor-grade (SG), single-crystal silicon wafers that served as controls. Cell processing was normally performed on mixed lots containing significant numbers of each of these two types of wafers. After evaluation of the performance of all cells, they were separated by types for incorporation into modules that were to be tested for electrical performance and response to environmental stress. A simplified flow chart displaying this scheme, for quantities representing half of the planned total to be processed, is presented.
The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology
Silicon carbide surfaces were heated to 1500 C in a vacuum and analyzed at room temperature with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The basic unit of the surfaces was considered as a plane of a tetrahedron of either SiC4 and CSi4 composition. AES spectra were obtained from 250-1500 C, with an analysis depth of 1 nm revealed the presence of little Si and mostly graphite. XPS analysis depth was 2 nm or less, and Si was found in the second 1 nm. Sliding friction tests with single-crystal silicon carbide in contact with iron in a vacuum were characterized by a stock-slip value. The coefficient of friction increased with increasing temperature up to 400 C, then decreased with increasing temperature from 400-600 C. Reheating surfaces to 800 C after preheating them to that temperature produced no changes in AES readings. It is concluded that the maximum density of silicon and silicon-carbide is at 800 C, and the higher the sliding temperature, the more metal that is transferred.
The effects of crystallographic orientation on the tribological properties of single-crystal silicon carbide surfaces in contact with various solids are investigated for adhesive and abrasive wear processes. In the adhesive wear process, the adhesion and wear of silicon carbide is found to be markedly dependent on crystallographic orientation. The force resisting shearing fracture of the adhesive bonds at the interface is lower in preferred crystallographic direction of slip. In the abrasive wear process, the 1 0 -1 0 direction on the basal plane of silicon carbide exhibits the lowest coefficient of friction and the greatest resistance to abrasion.
Fracture toughness data is given for multicrystalline silicon which has been prepared by directional solidification. Results indicated a plane-strain fracture toughness of 0.8 to 0.87 MN/m to the 3/2 power, which is consistent with data for single-crystal silicon.
The defect state prevailing in iodine doped single-crystal samples of Hg0.8Cd0.2Te, annealed at 450-600 C in Hg vapor, has been deduced from Hall effect measurements on samples cooled to 77 K from the annealing temperature. Results are found to be similar to those previously obtained for iodine doped CdS, i.e. iodine acts as a single donor occupying Te lattice sites with a fraction paired with the native acceptor defects. The concentration of iodine on tellurium lattice sites increases with the partial pressure of Hg, whereas that of the pair species increases as the partial pressure of Hg decreases.
Reliability attributes are being developed on a wide variety of advanced single-crystal silicon solar cells. Two separate investigations: cell-contact integrity (metal-to-silicon adherence), and cracked cells identified with fracture-strength-reducing flaws are discussed. In the cell-contact-integrity investigation, analysis of contact pull-strength data shows that cell types made with different metallization technologies, i.e., vacuum, plated, screen-printed and soldered, have appreciably different reliability attributes. In the second investigation, fracture strength was measured using Czochralski wafers and cells taken at various stages of processing and differences were noted. Fracture strength, which is believed to be governed by flaws introduced during wafer sawing, was observed to improve (increase) after chemical polishing and other process steps that tend to remove surface and edge flaws.
Project 3, the subject of this technical report, was structured toward the successful engine demonstration of an improved-efficiency, long-life, tip-seal system for turbine blades. The advanced tip-seal system was designed to maintain close operating clearances between turbine blade tips and turbine shrouds and, at the same time, be resistant to environmental effects including high-temperature oxidation, hot corrosion, and thermal cycling. The turbine blade tip comprised an environmentally resistant, activated-diffussion-bonded, monocrystal superalloy combined with a thin layer of aluminium oxide abrasive particles entrapped in an electroplated NiCr matrix. The project established the tip design and joint location, characterized the single-crystal tip alloy and abrasive tip treatment, and established the manufacturing and quality-control plans required to fully process the blades. A total of 171 blades were fully manufactured, and 100 were endurance and performance engine-tested.
The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.
The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.
Problems in the design of optical systems for use with mid-IR (MIR; 10.6-micron) lasers are reviewed. The cryogenically operated lead-chalcogenide tunable diode lasers currently used as sources emit complex far-field patterns and require sophisticated beam collection, shaping, and guide optics. Since conventional optics using large mirrors and Ge lenses are often awkward to use and sensitive to vibration, and since optical fibers for the MIR have not been perfected, current research concentrates on hollow flexible rectangular metallic pipes. These pipes are shown to provide transmission of 95 percent or better over a 1-m length, with beam shaping and polarization control. The low transmission losses and wideband IR transmission of single-crystal alkali halides suggest the feasibility of their use in MIR optical fibers and waveguides.
Superconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically low microwave loss is therefore a central materials challenge, yet experimentally validated platforms remain scarce. In this work, we integrate a crystalline dielectric into a heteroepitaxial TiN/$γ$-Al$_2$O$_3$/TiN trilayer grown via pulsed laser deposition. Correlative high-resolution imaging, diffraction, and spectroscopy measurements confirm the single-crystal quality and chemical integrity of all layers, with minimal defects and limited anion interdiffusion across the oxide-nitride interfaces. Using microwave lumped-element resonators with parallel-plate capacitors, we report the first direct measurement of the dielectric loss of epitaxial $γ$-Al$_2$O$_3$, for which we find a low intrinsic two-level system loss, $δ_{\text{TLS}}^0 = (2.8 \pm 0.1) \times 10^{-5}$. These results establish heteroepitaxial oxides on transition metal nitrides as an attractive materials platform for superconducting quantum circuits, particularly for integration into compact device architectures such as merged-element transmons and microwave kinetic inductance detectors.
Lanthanide and actinide intermetallic materials exhibit intriguing electronic, structural, and magnetic properties arising from their partially filled f orbitals. Strong f-electron correlations can significantly modify the electronic density of states, carrier scattering, and transport behavior, making these systems promising candidates for unconventional thermoelectric materials. In previous studies, single crystals of A1.33T4Al8Si2 (A = Ce, Th, U, Np; T = Co, Ni) were synthesized. This structure consists of ordered TAl2 corrugated double layers separated by disordered An–Si monolayers. The inherent disorder within the An–Si layers has been linked to unusual magnetic behavior, such as spin-glass phenomena, and is expected to strongly influence phonon scattering and charge-carrier transport relevant to thermoelectric performance. However, the thermoelectric properties of this material family have not previously been explored. In this work, DFT calculations were performed to evaluate the electronic density of states, band structures, and thermoelectric properties, including the effects of doping. To validate these predictions, Ce1.33Co4Al8Si2 single crystals were grown and experimentally characterized. Additionally, a new Yb1.33Co4Al8Si2 phase was synthesized and characterized using single-crystal XRD, SEM-EDS, magnetization measurements, and thermoelectric measurements. These results provide insight into structure–property relationships governing thermoelectric behavior in f-electron intermetallics and offer guidance for future thermoelectric materials.
The rising demand for lithium-ion batteries (LIBs) has intensified the need for efficient recycling methods to address both supply chain constraints and environmental impacts. Direct upcycling, distinguished by its ability to achieve both the structural and compositional integrity of cathode materials, has gained prominence as a sustainable alternative to conventional pyrometallurgical and hydrometallurgical processes. However, the current direct upcycling methods are typically limited by incorporating Li and/or Ni, significantly constraining the adaptability across diverse LiNi x Mn y Co z O 2 (NMCs). Here, in this study, a versatile molten salt approach is reported that expands the scope of direct upcycling by enabling simultaneous incorporation of Li, Ni, and Mn. This methodology facilitates flexible conversion among diverse NMC compositions, including non-stoichiometric Co/Mn systems such as upcycling degraded LiCoO 2 (D-LCO), LiNi 1/3 Mn 1/3 Co 1/3 O 2 (D-NMC111), LiNi 0.8 Mn 0.1 Co 0.1 O 2 (D-NMC811) to surface Mn enriched NMC111, LiNi 0.5 Mn 0.3 Co 0.2 O 2 (NMC532), and NMC811, respectively. The gradient transition metal distribution in upcycled products, characterized by Mn-enriched outer layers and Co/Ni-enriched cores enhances the interfacial stability of NMC cathodes, addressing critical challenges in long-term performance and structural integrity. These results highlight the potential of flux methods for advancing the upcycling of spent cathodes and producing high-performance materials for next-generation LIBs applications.
The escalating demand for lithium-ion batteries (LIBs) necessitates advanced recycling strategies that can address both resource scarcity and environmental impact. While conventional hydrometallurgy shows promise, it is challenged by complexity, impurity management, and environmental footprint. Here, we report a strategic polyol-metallurgy recycling process that efficiently transforms spent polycrystalline LiNi1/3Mn1/3Co1/3O2 (NMC111) into high-performance large-grained LiNi0.6Mn0.2Co0.2O2 (NMC622), offering dual benefits of compositional upcycling and morphology upgradation. Our approach leverages a polyol system with meticulous control over nickel salt addition and the precipitation process. This yields upcycled cathode materials possessing excellent structural integrity, well-defined large-grained particles (5-10?..mu..m), and robust electrochemical performance, including a specific capacity of ~182 mAh g-1 at C/10 and 88.0% capacity retention after 100 cycles. This facile and multifunctional process provides an environmental-friendly pathway for advanced cathode recycling, significantly contributing to a circular economy for LIBs through precise control over critical material attributes.
An atomic-level understanding of the underlying structural metastability is still absent in halide perovskite photovoltaic systems. Focusing on the model material CsPbBr 3 , the impact of mechanically induced atomic structure alteration is elucidated through structural modeling and X-ray diffraction measurements. Sudden Cs–Br bond breaking drives the system metastability, where the first-order transition arises from cation-halide bond strain relief by severing the corner connectivity of the PbBr 6 units. The pressure–volume and entropy terms govern the Gibbs free-energy landscape in halide perovskites. In conclusion, metastability is revealed as a critical factor limiting the performance of lead halide perovskites under extreme but natural environments.