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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Monolithic (MMIC) and discrete transistor (MIC) low noise amplifiers are compared on the basis of performance, cost, and reliability. The need for cryogenic LNA's for future large microwave arrays for radio astronomy is briefly discussed and data is presented on a prototype LNA for the 1 to 10 GZH range along with a very wideband LNA for the 1 to 60 GHz range.
In this paper, we present two MMIC power amplifier designs utilizing InP HEMT technology.
A method is presented for the measurement of the harmonic output power of high power klystron amplifiers, involving coherent hemispherical radiation pattern measurements of the radiated klystron output. Results are discussed for the operation in saturated and unsaturated conditions, and with a waveguide harmonic filter included.
This paper summarizes the development of W band amplifiers for the Local Oscillator (LO) chains for the Herschel HIFI (Heterodyne Instrument for Far Infrared) Instrument.
This paper summarizes the development of W band amplifiers for the Local Oscillator (LO) chains for the Herschel HIFI (Heterodyne Instrument for Far Infrared) Instrument.
A number of monolithic W-band power amplifiers have been developed for local oscillators of the Far Infrared and Sub-millimeter Telescope.
This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.
The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation
Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.
This paper presents the design, fabrication, and test results for a novel waveguide multimode directional coupler (MDC). The coupler fabricated from dissimilar frequency band waveguides, is capable of isolating power at the 2nd harmonic frequency from the fundamental power at the output port of traveling-wave tube amplifiers. Test results from proof-of-concept demonstrations are presented for Ku/Ka-band and Ka/E-band MDCs, which demonstrate sufficient power in the 2nd harmonic for a space borne beacon source for mm-wave atmospheric propagation studies.
The paper presents the design, fabrication, and test results for a novel waveguide multimode directional coupler (MDC). The coupler fabricated from dissimilar frequency band waveguides, is capable of isolating power at the 2nd harmonic frequency from the fundamental power at the output port of a high power traveling-wave tube amplifier. The major advantage of the MDC is significantly lower insertion loss compared to a diplexer. The presentation slides for the paper that was approved is attached. The tracking number for the paper that was approved is TN 37015.
L3 Technologies Electron Devices Division, (L3 EDD) and L3 Technologies Narda Microwave West (L3 NMW), are completing space-flight qualification for a 200-watt Q-band linearized channelized traveling-wave tube amplifier (LCTWTA) capable of over 5 GHz instantaneous bandwidth in a conduction-cooled package. This paper will discuss the LCTWTA performance, manufacturing and flight qualification test results.
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.
We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds.
This paper presents the design,fabrication and performance of a three-stage 155-GHz monolithic low noise amplifier (LNA) using 0.1 mue pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology.
We report on the performance of power amplifiers as local oscillator drivers for millimeter and submillimeter-wave receivers.
The purpose of this testing was to characterize the pulsed-laser-induced single event effect (SEE) susceptibility of the Texas Instruments LM7171 voltage feedback amplifier. The test was conducted at the Naval Research Laboratory using their two-photon absorption (TPA) laser.
This study is to determine the heavy ion induced single event effect (SEE) susceptibility of the Qorvo’s NBB-400 cascadable broadband GaAs amplifier DC to 8GHz.