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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Temperature dependence of electrical conductivity and lunar temperatures

Metallic conduction mechanicsms are probably not important in lunar materials because of the small amounts of free metal and metallic oxides present. This is confirmed by the extremely low conductivities measured to date and the fact that the conductivity increases with temperature. The major conduction mechanicsm appears to be ionic. This conduction mechanism is very strongly controlled by temperature, by deviations from stoichiometry, by electric field strengths, and by oxygen fugacity.

Olhoeft, G. R.↗
NASA NTRS1974

A varistor technique to reduce the hazards of electrostatics to electroexplosive devices

Inherent to the design and construction of electroexplosive devices is a vulnerability to inadvertent initiation from electrostatic discharges. The small spacing (approx. 1 mm) between the bridgewire circuits and the body and between bridgewire circuits afford easy breakdown paths for electrostatic voltages. In some cases where metallic component pyrotechnic materials are loaded onto the bridgewire circuits the susceptability to inadvertant initiation is increased. An approach to solving this problem is reported based on the application of a new varistor (nonlinear resistor) material. Certain formulations of metal oxides normally have electrically nonconductive characteristics. However, at selective potentials they become conductive. By proper design and incorporation into electroexplosive devices a variety of breakdown potentials can be achieved. The breakdown potential of the varistor element can be adjusted to meet the requirements of the particular electroexplosive device. The varistor element can also be incorporated in an area isolated from the explosive or pyrotechnic material. Adaptation of this technique to a specific electroexplosive device and the resulting test data are presented.

Menichelli, V. J.↗
NASA NTRS1975

Interface control scheme for computer high-speed interface unit

Control scheme is general and performs for multiplexed and dedicated channels as well as for data-bus interfaces. Control comprises two 64-pin, dual in-line packages, each of which holds custom large-scale integrated array built with silicon-on-sapphire complementary metal-oxide semiconductor technology.

Ballard, B. K.↗
NASA NTRS1975

Interactive graphical computer-aided design system

System is used for design, layout, and modification of large-scale-integrated (LSI) metal-oxide semiconductor (MOS) arrays. System is structured around small computer which provides real-time support for graphics storage display unit with keyboard, slave display unit, hard copy unit, and graphics tablet for designer/computer interface.

Edge, T. M.↗
NASA NTRS1975

CMOS array design automation techniques

A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed.

Ramondetta, P.↗
NASA NTRS1976

LOGSIM programmer's manual

A programmer's manual is reported for a Logic Simulator (LOGSIM) computer program that is a large capacity event simulator with the capability to accurately simulate the effects of certain unknown states, rise and fall times, and floating nodes in large scale metal oxide semiconductor logic circuits. A detailed description of the software with flow charts is included within the report.

Mitchell, C. L.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The initial results obtained from the Complementary Metal Oxide Semiconductors Radiation Effects Measurement experiment are presented. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on the ground simulation experiment with Co 60, indicated that the measured space damage is greater than predicted by a factor of two for shields thicker than 100 mils (2.54 mm), but agrees well with predictions for the thinner shields.

Cliff, R. A.↗
NASA NTRS1976

Voltage stress effects on microcircuit accelerated life test failure rates

The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.

Johnson, G. M.↗
NASA NTRS1976

Study of Al with a combined Auger electron spectrometer-ellipsometer system

Auger electron spectroscopy and ellipsometry were applied in order to measure the optical constants and study the surface chemistry of vapor-deposited Al films and high-purity bulk Al surfaces in situ under vacuum. The optical constants measured were compared with the extinction coefficient computed by the free-electron theory. The contamination of the clean Al surface was in the form of a metal oxide film. Auger electron spectroscopic measurements were used to establish the relationship between the Auger peaks of O (513 eV) and aluminum oxide (53 eV) and changes in the measured optical phase and film thickness. The free path length of the Al Auger electrons (67 eV) in the oxide film was determined, and it was shown that the amplitude of these peaks is a linear function of film thickness down to 0.6 A.

Allen, T. H.↗
NASA NTRS1977

Advanced general-purpose computer

Computer uses custom-designed complementary metal-oxide semiconductor/silicon-on-sapphire LSI arrays with critical computer paths packages on thick-film hybrids.

Clapp, W. A.↗
NASA NTRS1977

Record dielectric breakdown automatically

Automatic Monitoring System for time-dependent dielectric breakdown tests ninety-nine metal-oxide semiconductor capacitors simultaneously. Each breakdown generates voltage spike registered on readouts and indicated by LED. Latching circuit prevents recording of possible subsequent breakdowns in same capacitor. In addition to research use, system could also be adapted for quality control.

Bates, E. T., Jr.↗
NASA NTRS1977

Safe handling practices for electrostatic-sensitive devices

Review is detailed compilation of safe handling practices for Metal-Oxide Semiconductor (MOS) circuit elements and other devices that are susceptible to damage by electrostatic discharge. Article lists safety procedures for all aspects of handling and use of these components. Included are guidelines for setting up static-free work station and list of materials and equipment needed to maintain antistatic protection. Appendix gives vendors of these items.

Herring, L. L.↗
NASA NTRS1977

Electrically-nonlinear composite material

Low-temperature sinter of semiconductor and polymer resin is useful in manufacture of circuit boards, cables, and electroexplosive devices. Material can absorb large amounts of heat and can withstand repeated exposures to electrostatic discharges with little deteriorating effects. These characteristics offer significant advantages over high-temperature-sintered, metal-oxide semiconducting materials.

Menichelli, V. J.↗
NASA NTRS1977

Charge-coupled differential amplifier

Device solves problem of differential voltage gain in sampled-data metal-oxide semiconductor, producing gain at any frequency compatible with CCD operation, with low noise, low power, good linearity, and high stability.

Hewes, C. R.↗
NASA NTRS1977

Analytical study of space processing of immiscible materials for superconductors and electrical contacts

The results of a study conducted to determine the role space processing or materials research in space plays in the superconductor and electrical contact industries are presented. Visits were made to manufacturers, users, and research organizations connected with these products to provide information about the potential benefits of the space environment and to exchange views on the utilization of space facilities for manufacture, process development, or research. In addition, space experiments were suggested which could result in improved terrestrial processes or products. Notable examples of these are, in the case of superconductors, the development of Nb-bronze alloys (Tsuei alloys) and, in the electrical contact field, the production of Ag-Ni or Ag-metal oxide alloys with controlled microstructure for research and development activities as well as for product development. A preliminary experimental effort to produce and evaluate rapidly cooled Pb-Zn and Cu-Nb-Sn alloys in order to understand the relationship between microstructure and superconducting properties and to simulate the fine structure potentially achievable by space processing was also described.

Gelles, S. H.↗
NASA NTRS1977

A complementary MOS process

The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated circuits is described. The fixed-gate array concept is presented as a means of obtaining CMOS integrated circuits in a fast and reliable fashion. Examples of CMOS circuits fabricated by both the conventional method and the fixed-gate array method are included. The electrical parameter specifications and characteristics are given along with typical values used to produce CMOS circuits. Temperature-bias stressing data illustrating the thermal stability of devices manufactured by this process are presented. Results of a preliminary study on the radiation sensitivity of circuits manufactured by this process are discussed. Some process modifications are given which have improved the radiation hardness of our CMOS devices. A formula description of the chemicals and gases along with the gas flow rates is also included.

Jhabvala, M. D.↗
NASA NTRS1976

Oxygen electrocatalysts for life support systems

The irreversibility of the oxygen electrode increases by 30 to 60 percent the energy required for water electrolysis over the thermodynamic value in life support systems involving conventional water electrolysis cells. To minimize this voltage loss, high area electrocatalysts, such as platinum metal, are often used for the O2 anode, but even so, the losses are still very substantial. In an attempt to find more effective electrocatalysts for this application, a number of defect metal oxides have been examined.

Ogrady, W. E.↗