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At least 451 records · Page 25

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NASA NTRS2004

Stress, Cognition, and Human Performance: A Literature Review and Conceptual Framework

The following literature review addresses the effects of various stressors on cognition. While attempting to be as inclusive as possible, the review focuses its examination on the relationships between cognitive appraisal, attention, memory, and stress as they relate to information processing and human performance. The review begins with an overview of constructs and theoretical perspectives followed by an examination of effects across attention, memory, perceptual-motor functions, judgment and decision making, putative stressors such as workload, thermals, noise, and fatigue and closes with a discussion of moderating variables and related topics. In summation of the review, a conceptual framework for cognitive process under stress has been assembled. As one might imagine, the research literature that addresses stress, theories governing its effects on human performance, and experimental evidence that supports these notions is large and diverse. In attempting to organize and synthesize this body of work, I was guided by several earlier efforts (Bourne & Yaroush, 2003; Driskell, Mullen, Johnson, Hughes, & Batchelor, 1992; Driskell & Salas, 1996; Haridcock & Desmond, 2001; Stokes & Kite, 1994). These authors should be credited with accomplishing the monumental task of providing focused reviews in this area and their collective efforts laid the foundation for this present review. Similarly, the format of this review has been designed in accordance with these previous exemplars. However, each of these previous efforts either simply reported general findings, without sufficient experimental illustration, or narrowed their scope of investigation to the extent that the breadth of such findings remained hidden from the reader. Moreover, none of these examinations yielded an architecture that adequately describes or explains the inter-relations between information processing elements under stress conditions.

Stress↗

NASA NTRS2005

Journal of Gravitational Physiology, Volume 12, Number 1

The following topics were covered: System Specificity in Responsiveness to Intermittent -Gx Gravitation during Simulated Microgravity in Rats; A Brief Overview of Animal Hypergravity Studies; Neurovestibular Adaptation to Short Radius Centrifugation; Effect of Artificial Gravity with Exercise Load by Using Short-Arm Centrifuge with Bicycle Ergometer as a Countermeasure Against Disused Osteoporosis; Perception of Body Vertical in Microgravity during Parabolic Flight; Virtual Environment a Behavioral and Countermeasure Tool for Assisted Gesture in Weightlessness: Experiments during Parabolic Flight; Artificial Gravity: Physiological Perspectives for Long-Term Space Exploration; Comparison of the Effects of DL-threo-Beta-Benzyloxyaspartate on the Glutamate Release from Synaptosomes before and after Exposure of Rats to Artificial Gravity; Do Perception and Postrotatory Vestibulo-Ocular Reflex Share the Same Gravity Reference?; Vestibular Adaptation to Changing Gravity Levels and the Orientation of Listing's Plane; Compound Mechanism Hypothesis on +Gz - Induced Brain Injury and Dysfunction of Learning and Memory; Environmental Challenge Impairs Prefrontal Brain Functions; Effect of 6-Days of Support Withdrawal on Characteristics of Balance Function; Hypergravity-Induced Changes of Neuronal Activities in CA1 Region of Rat Hippocampus; Audiological Findings in Antiorthostatic Position Modelling Microgravitation; Investigating Human Cognitive Performance during Spaceflight; The Relevance of the Minimization of Torque Exchange with the Environment in Weightlessness is Confirmed by Asimulation Study; Characteristics of the Eyes Pursuit Function during Readaptation to Terrestrial Gravity after Prolonged Flights Aboard the International Space Station; Comparison of Cognitive Performance Tests for Promethazine Pharmacodynamics in Human Subjects; Structural Reappraisal of Dendritic Tree of Cerebellar Purkinje Cell for Novel Functional Modeling of Elementary Sensorimotor Adaptive Processes; Orpheus 0 G or Ear in Microgravity to Establish Symptoms Concomittant of Inner and Middle Ear and Osteoporosis in Microgravity; Understanding Visual Perception in the Perspective of Gravity; Cortical Regions Associated with Orthostatic Stress in Conscious Humans; Restoration of Central Blood Volume: Application of a Simple Concept and Simple Device to Counteract Cardiovascular Instability in Syncope and Hemorrhage; WISE-2005: Integrative Cardiovascular Responses with LBNP during 60-Day Bed Rest in Women; Intracranial Pressure Increases during Weightlessness. A Parabolic Flights Study; Lower Limb & Portal Veins Echography for Predicting Risk of Thrombosis during a 90-D Bed Rest; Calf Tissue Liquid Stowage and Muscular and Deep Vein Distension in Orthostatic Tests after a 90-Day Head Down Bed Rest; Morphology of Brain Vessels in the Tail Suspended Rats Exposed to Intermittent 2 G; Alterations in Vasoreactivity of Femoral Artery Induced by Hindlimb Unweighting are Related to the Changes of Contractile Protein in Rats; and Respiratory Sinus Arrhythmia: A Marker of Decreased Parasympathetic Modulation after Short Duration.

Fuller, Charles A.↗

DOE OSTI2020

Effects of Six Sequential Charged Particle Beams on Behavioral and Cognitive Performance in B6D2F1 Female and Male Mice

The radiation environment astronauts are exposed to in deep space includes galactic cosmic radiation (GCR) with different proportions of all naturally occurring ions. To assist NASA with assessment of risk to the brain following exposure to a mixture of ions broadly representative of the GCR, we assessed the behavioral and cognitive performance of female and male C57BL/6J × DBA2/J F1 (B6D2F1) mice two months following rapidly delivered, sequential 6 beam irradiation with protons (1 GeV, LET = 0.24 keV, 50%), 4 He ions (250 MeV/n, LET = 1.6 keV/μm, 20%), 16 O ions (250 MeV/n, LET = 25 keV/μm 7.5%), 28 Si ions (263 MeV/n, LET = 78 keV/μm, 7.5%), 48Ti ions (1 GeV/n, LET = 107 keV/μm, 7.5%), and 56 Fe ions (1 GeV/n, LET = 151 keV/μm, 7.5%) at 0, 25, 50, or 200 cGy) at 4–6 months of age. When the activity over 3 days of open field habituation was analyzed in female mice, those irradiated with 50 cGy moved less and spent less time in the center than sham-irradiated mice. Sham-irradiated female mice and those irradiated with 25 cGy showed object recognition. However, female mice exposed to 50 or 200 cGy did not show object recognition. When fear memory was assessed in passive avoidance tests, sham-irradiated mice and mice irradiated with 25 cGy showed memory retention while mice exposed to 50 or 200 cGy did not. The effects of radiation passive avoidance memory retention were not sex-dependent. There was no effect of radiation on depressive-like behavior in the forced swim test. There was a trend toward an effect of radiation on BDNF levels in the cortex of males, but not for females, with higher levels in male mice irradiated with 50 cGy than sham-irradiated. Finally, sequential 6-ion irradiation impacted the composition of the gut microbiome in a sex-dependent fashion. Taxa were uncovered whose relative abundance in the gut was associated with the radiation dose received. Thus, exposure to sequential six-beam irradiation significantly affects behavioral and cognitive performance and the gut microbiome.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2021

Propagation Pattern for Moment Representation of the Lattice Boltzmann Method

A propagation pattern for the moment representation of the regularized lattice Boltzmann method (LBM) in three dimensions is presented. Using effectively lossless compression, the simulation state is stored as a set of moments of the lattice Boltzmann distribution function, instead of the distribution function itself. An efficient cache-aware propagation pattern for this moment representation has the effect of substantially reducing both the storage and memory bandwidth required for LBM simulations. This article extends recent work with the moment representation by expanding the performance analysis on central processing unit (CPU) architectures, considering how boundary conditions are implemented, and demonstrating the effectiveness of the moment representation on a graphics processing unit (GPU) architecture.

42 ENGINEERING↗

DOE OSTI2025

An infrared on-shell action and its implications for soft charge fluctuations in asymptotically flat spacetimes

We study the infrared on-shell action of Einstein gravity in asymptotically flat spacetimes (AFSs), obtaining an effective, gauge-invariant boundary action for memory and shockwave spacetimes. We show that the phase space is in both cases parameterized by the leading soft variables in AFSs, thereby extending the equivalence between shockwave and soft commutators to spacetimes with non-vanishing Bondi mass. We then demonstrate that our on-shell action is equal to three quantities studied separately in the literature: (i) the soft supertranslation charge; (ii) the shockwave effective action, or equivalently the modular Hamiltonian; and (iii) the soft effective action. Finally, we compute the quantum fluctuations in the soft supertranslation charge and, assuming the supertranslation parameter may be promoted to an operator, we obtain an area law, consistent with earlier results showing that the modular Hamiltonian has such fluctuations.

asymptotically flat spacetimes↗

DOE OSTI2024

Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning

Reliability issues stemming from device level nonidealities of nonvolatile emerging technologies like ferroelectric field-effect transistors (FeFETs), especially at scaled dimensions, cause substantial degradation in the accuracy of in-memory crossbar-based AI systems. Here, in this work, we present a variation-aware design technique to characterize the device level variations and to mitigate their impact on hardware accuracy employing a Bayesian neural network (BNN) approach. An effective conductance variation model is derived from the experimental measurements of cycle-to-cycle (C2C) and device-to-device (D2D) variations performed on FeFET devices fabricated using 28 nm high-k metal gate technology. The variations were found to be a function of different conductance states within the given programming range, which sharply contrasts earlier efforts where a fixed variation dispersion was considered for all conductance values. Such variation characteristics formulated for three different device sizes at different read voltages were provided as prior variation information to the BNN to yield a more exact and reliable inference. Near-ideal accuracy for shallow networks (MLP5 and LeNet models) on the MNIST dataset and limited accuracy decline by ~3.8%–16.1% for deeper AlexNet models on CIFAR10 dataset under a wide range of variations corresponding to different device sizes and read voltages, demonstrates the efficacy of our proposed device-algorithm co-design technique.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2025

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗

NASA NTRS2013

Effect of Temperature on the Deformation Behavior of B2 Austenite in a Polycrystalline Ni49.9Ti50.1 (at.Percent) Shape Memory Alloy

Superelasticity in austenitic B2-NiTi is of great technical interest and has been studied in the past by several researchers [1]. However, investigation of temperature dependent deformation in B2-NiTi is equally important since competing mechanisms of stress-induced martensite (SIM), retained martensite, plastic and deformation twinning can lead to unusual mechanical behaviors. Identification of the role of various mechanisms contributing to the overall deformation response of B2-NiTi is imperative to understanding and maturing SMA-enabled technologies. Thus, the objective of this work was to study the deformation of polycrystalline Ni49.9Ti50.1 (at. %) above A(sub f) (105 C) in the B2 state at temperatures between 165-440 C, and generate a B2 deformation map showing active deformation mechanisms in different temperature-stress regimes.

Garg, A.↗

NASA NTRS2004

Mitigation of High Altitude and Low Earth Orbit Radiation Effects on Microelectronics via Shielding or Error Detection and Correction Systems

The NASA Cooperative Agreement NAG4-210 was granted under the FY2000 Faculty Awards for Research (FAR) Program. The project was proposed to examine the effects of charged particles and neutrons on selected random access memory (RAM) technologies. The concept of the project was to add to the current knowledge of Single Event Effects (SEE) concerning RAM and explore the impact of selected forms of radiation on Error Detection and Correction Systems. The project was established as an extension of a previous FAR awarded to Prairie View A&M University (PVAMU), under the direction of Dr. Richard Wilkins as principal investigator. The NASA sponsored Center for Applied Radiation Research (CARR) at PVAMU developed an electronic test-bed to explore and quantify SEE on RAM from charged particles and neutrons. The test-bed was developed using 486DX microprocessor technology (PC-104) and a custom test board to mount RAM integrated circuits or other electronic devices. The test-bed had two configurations - a bench test version for laboratory experiments and a 400 Hz powered rack version for flight experiments. The objectives of this project were to: 1) Upgrade the Electronic Test-bed (ETB) to a Pentium configuration; 2) Accommodate more than only 8 Mbytes of RAM; 3) Explore Error Detection and Correction Systems for radiation effects; 4) Test modern RAM technologies in radiation environments.

Gupta, Kajal↗

NASA NTRS2021

Non-Volatile Memory Radiation Update

This work provides a current update of radiation testing activities on non-volatile memories in support of the NEPP program. Single-event effects data from heavy-ion testing is highlighted on two off-the-shelf high-speed memory modules.

Flash↗

DOE OSTI2023

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗

NASA NTRS1983

Distributed multiport memory architecture

A multiport memory architecture is diclosed for each of a plurality of task centers connected to a command and data bus. Each task center, includes a memory and a plurality of devices which request direct memory access as needed. The memory includes an internal data bus and an internal address bus to which the devices are connected, and direct timing and control logic comprised of a 10-state ring counter for allocating memory devices by enabling AND gates connected to the request signal lines of the devices. The outputs of AND gates connected to the same device are combined by OR gates to form an acknowledgement signal that enables the devices to address the memory during the next clock period. The length of the ring counter may be effectively lengthened to any multiple of ten to allow for more direct memory access intervals in one repetitive sequence. One device is a network bus adapter which serially shifts onto the command and data bus, a data word (8 bits plus control and parity bits) during the next ten direct memory access intervals after it has been granted access. The NBA is therefore allocated only one access in every ten intervals, which is a predetermined interval for all centers. The ring counters of all centers are periodically synchronized by DMA SYNC signal to assure that all NBAs be able to function in synchronism for data transfer from one center to another.

Kohl, W. H.↗

NASA NTRS1978

Annual Conference on Nuclear and Space Radiation Effects, 15th, University of New Mexico, Albuquerque, N. Mex., July 18-21, 1978, Proceedings

Radiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.

Simons, M.↗

DOE OSTI2024

Improving streamflow predictions across CONUS by integrating advanced machine learning models and diverse data

Accurate streamflow prediction is crucial to understand climate impacts on water resources and develop effective adaption strategies. A global long short-term memory (LSTM) model, using data from multiple basins, can enhance streamflow prediction, yet acquiring detailed basin attributes remains a challenge. To overcome this, we introduce the Geo-vision transformer (ViT)-LSTM model, a novel approach that enriches LSTM predictions by integrating basin attributes derived from remote sensing with a ViT architecture. Applied to 531 basins across the Contiguous United States, our method demonstrated superior prediction accuracy in both temporal and spatiotemporal extrapolation scenarios. Geo-ViT-LSTM marks a significant advancement in land surface modeling, providing a more comprehensive and effective tool for better understanding the environment responses to climate change.

Tayal, Kshitij↗

NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗

NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

Flash↗

DOE OSTI2026

Molecular pathways for learning in the single-cell Stentor coeruleus

The single-cell Stentor coeruleus contracts in response to mechanical taps but habituates and learns to ignore the taps after repeated stimulation. Here, we explored the molecular changes that occur during the formation of this cellular memory in order to improve our understanding of non-synaptic learning. We impaired cellular protein synthesis with cycloheximide and puromycin and found that, contrary to the effects of such treatments on metazoa, these drugs accelerate habituation and prolong memory retention in Stentor . Exploratory proteomic and transcriptomic analyses identified candidate proteins and genes that changed over the course of habituation and response recovery, pointing toward the regulation of Stentor learning by calcium signaling and protein phosphorylation. Building on these results, we found that using RNA interference to knock down the calcium-binding, EF-hand domain-containing protein SteCoe_6763 accelerated habituation. Furthermore, increased extracellular calcium improved Stentor learning, while treatment with kinase and phosphatase inhibitors impaired learning. In particular, KN-93, a drug known to inhibit calcium/calmodulin-dependent kinase II and voltage-gated calcium channels, decreased both the rate and extent of habituation in Stentor , similar to its effects on learning in metazoa. We also discovered that habituation memory can be maintained in progeny following cell division. Taken together, these results suggest that response recovery in Stentor requires new protein synthesis and that memory formation involves the modification of delocalized mechanoreceptors by phosphorylation and calcium signaling. This is consistent with our previous model of Stentor learning, in which habituation occurs through the inactivation of cell-surface receptors.

CaMKII↗

NASA NTRS2018

The Effect of Thin Film Adhesives on Mode I Interlaminar Fracture Toughness in Carbon Fiber Composites with Shape Memory Alloy Inserts

Shape Memory Alloy (SMA) was placed within Polymer Matrix Composite (PMC) panels alongside film adhesives to examine bonding. Double cantilever beam (DCB) testing was performed using ASTM D5528. C-scanning was performed before testing, modal acoustic emissions (MAE) were monitored during testing, and microscopy performed post-test. Data was analyzed using modified beam theory (MBT), compliance calibration (CC) and modified compliance calibration (MCC) methods. Fracture toughness for control specimens was higher than previously reported due to fiber-bridging. Specimens with SMAs and adhesives stabilized crack propagation. Results revealed SMA-bridging; a phenomenon mimicking fiber-bridging which increased the load and fracture toughness of SMA specimens.

Derek J Quade↗