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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Arylammonium-Assisted Reduction of the Open-Circuit Voltage Deficit in Wide-Bandgap Perovskite Solar Cells: The Role of Suppressed Ion Migration

Surface treatment using large alkyl/aryl ammonium cations has demonstrated reduced open-circuit voltage (V OC ) deficits in perovskite solar cells (PSCs), but the origin of the improvements has been vaguely attributed to defect passivation. Here, we combine the microscopic probing of the local electrical properties, thermal admittance spectroscopic analysis, and first principles calculations to elucidate the critical role of arylammonium interface layers on suppressing the ion migration in wide-bandgap (WBG) PSCs. Our results reveal that arylammonium surface treatment using phenethylammonium iodide increases the activation energy barrier for ion migration on the surface, which suppresses the accumulation of charge defects at surface and grain boundaries (GBs), leading to reduced dark saturation current density in WBG PSCs. Furthermore, with device optimization, our champion 1.73-eV PSC delivers a power conversion efficiency of 19.07% with a V OC of 1.25 V, achieving a V OC -deficit of 0.48 V.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Staircase resiliency in a fluctuating cellular array

Inhomogeneous mixing by stationary convective cells set in a fixed array is a particularly simple route to layering. Layered profile structures, or staircases, have been observed in many systems, including drift-wave turbulence in magnetic confinement devices. The simplest type of staircase occurs in passive-scalar advection, due to the existence and interplay of two disparate timescales, the cell turn-over (τ H ), and the cell diffusion (τ D ) time. In this simple system, we study the resiliency of the staircase structure in the presence of global transverse shear and weak vortex scattering. The fixed cellular array is then generalized to a fluctuating vortex array in a series of numerical experiments. The focus is on regimes of low-modest effective Reynolds numbers, as found in magnetic fusion devices. By systematically perturbing the elements of the vortex array, we learn that staircases form and are resilient (although steps become less regular, due to cell mergers) over a broad range of Reynolds numbers. The criteria for resiliency are (a) τ D >>τ H and (b) a sufficiently high profile curvature (κ ≥ 1.5). We learn that scalar concentration travels along regions of shear, thus staircase barriers form first, and scalar concentration "homogenizes" in vortices later. The scattering of vortices induces a lower effective speed of scalar concentration front propagation. The paths are those of the least time. We observe that if background diffusion is kept fixed, the cell geometric properties can be used to derive an approximation for the effective diffusivity of the scalar. Furthermore, the effective diffusivity of the fluctuating vortex array does not deviate significantly from that of the fixed cellular array.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Design, Optimization, and In-Depth Understanding of Front and Rear Junction Screen-Printed Double-Side Passivated Contacts Solar Cells

In this work, detailed numerical modeling is performed for front junction (FJ) and rear junction (RJ) n-type Si solar cells with screen-printed double-side poly-Si based tunnel oxide passivated contacts (TOPCon). Fundamental understanding of both structures is crucial to explore factors that limit the efficiency potential of the two designs. By investigating several key parameters such as front poly sheet resistance and thickness, bulk material properties, and carrier transport in our simulation model, we determine and explain why RJ cells outperform FJ cells. Our findings reveal that FJ suffers from present technological limitations of p-poly based passivated contacts, namely, i) large recombination observed in textured p-TOPCon emitter and ii) low solid solubility and hole mobility in boron-doped poly-Si resulting in very high sheet resistance of front p-poly layers which must be made thin to reduce absorption losses. In contrast, RJ desensitized the cell efficiency to front sheet resistance allowing application of ultra-thin front n-poly layers and is therefore ideally suited for double-side TOPCon cells. Lastly, we have developed a roadmap for efficiency projections of commercial-type screen-printed RJ and FJ topologies reaching ~24% and >22.5% efficiencies respectively, quantifying and explaining the impact of technological innovations on the performance of each design.

14 SOLAR ENERGY↗
DOE OSTI2025

Layered patterns of active scalar fields in a two-dimensional magnetohydrodynamic system

Here, we observe the formation of staircase patterns in the magnetic potential (𝐴) in a weakly magnetized two-dimensional magnetohydrodynamic system driven by a forced, fluctuating vortex array. Layering occurs due to inhomogeneous mixing of 𝐴 by vortex cells. Magnetic Reynolds number (𝑅 𝑚 )–dependent quenching of the turbulent diffusion of 𝐴 by weak magnetic fields increases the disparity between the (short) cell circulation time and the (long) time for intercell transport of magnetic potential. Thus, magnetic fields strengthen transport barriers between cells and reinforce the staircase, relative to its passive scalar counterpart. The analysis reveals a feedback mechanism, which promotes staircase formation. Magnetic staircases persist in both the flux expulsion (𝑅 𝑚 ⁢𝑣$^2_𝐴$/𝑈$^2_0$<1) and vortex disruption (𝑅 𝑚 ⁢𝑣$^2_𝐴$/𝑈$^2_0$≥1) limits. In the latter case, residual vortex cells homogenize 𝐴. Global layering morphology is shown to be well characterized by staircase curvature. Stochastic forcing of magnetic potential can support magnetic staircases against resistive decay.

magnetohydrodynamics↗
DOE OSTI2025

Poly-Si Passivating Contacts Hydrogenation by Microwave Annealing

Hydrogenation is a crucial step in the fabrication of high-efficiency silicon solar cells. In this study, we demonstrate the for the first time effectiveness of hydrogen activation via microwave annealing of hydrogen-rich dielectrics coated on poly-Si passivating contacts. This method is compared with conventional hydrogenation techniques, such as annealing in N2 in the presence of a hydrogen-rich source (such as hydrogenated aluminum oxide (AlOx:H), hydrogenated silicon nitride (SiNy:H), or a AlOx:H/SiNy:H stack). Key improvements observed include a reduction in J0 from 30 to <5 fA/cm2, an increase in iVoc from 690 to >730 mV, and an enhancement in effective lifetime (teff) from 0.6 to ~3.5 milliseconds on phosphorus-doped poly-Si/SiO2 passivating contact samples. With a very short annealing time of ~1-2 minutes, the samples passivated by AlOx:H, SiNy:H, or the stack show similar performance to samples subjected to 30 minutes of nitrogen annealing. Photoluminescence (PL) spectra corroborate our findings regarding the hydrogenation of the poly-Si layer and the c-Si substrate, with an increase in PL intensity after microwave annealing. Ultimately, our work suggests that microwave annealing could be a promising addition, offering flexibility to traditional firing hydrogenation processes.

14 SOLAR ENERGY↗
DOE OSTI2024

Coupling of Infrared Active Colloidal Quantum Dots and Amorphous Selenium for Fast and Sensitive Photodetection

Colloidal quantum dot (CQD) based infrared (IR) photodetectors offer facile wavelength tunability in the IR and low-cost fabrication. However, owing to their large surface areas, CQDs intrinsically have significant surface traps critically affecting the speed of CQD photodetectors, typically mediated through tedious surface passivation efforts. In this report, an alternative strategy involving coupling of near-IR photoactive lead sulfide CQDs with a thermally evaporated amorphous selenium (a-Se) hole transport layer is proposed. By separating the detector into a photon absorbing CQD region and a charge transport a-Se region, the study takes advantage of the extremely low noise, predominantly hole-only transport process in a-Se. Here, a high 3 dB bandwidth of 2.5 MHz and a competitive specific detectivity of 2.5 × 10 11 Jones at room temperature are demonstrated at 980 nm. This report serves as a first demonstration of strong coupling between an IR active CQD absorber and a-Se, which paves the path to obtain fast and highly photoresponsive IR photodetection in the future.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nanoparticle Surface Passivation Strategies to Improve the Cycle and Calendar Lifetime of Silicon Anodes in Standard Carbonate Electrolytes

Silicon Lithium alloys (SiLix) as the anode active material in a Li-Ion battery configuration offer possible energy densities paralleled only by pure lithium metal. However, the extreme mechanical deformation of alloying and dealloying SiLix through charge/discharge cycles paired with the highly reactive interface of SiLix which generates an interfacial layer known as the solid-electrolyte-interphase are large barriers to industrial adoption of high-silicon-content negative electrodes. Moreover, these challenges are magnified when the thickness of the electrode is brought to relevant levels (>3 mg/cm2). Here, I describe our efforts to address these challenges by utilizing single-nanometer-scale silicon nanoparticles to reduce capacity fade related to mechanical failure. I also detail our efforts to modify the silicon surface through interfacial chemical engineering strategies to passivate the silicon surface. This development three different majority silicon electrodes (50-74 wt%) to achieve cycle capacity retention of greater than 73% through 1000 charge/discharge cycles against capacity-matched NMC-based cathodes and calendar lifetimes greater than one year. This research is a part of the multi-national lab Silicon Consortium Project.

anodes↗
DOE OSTI2021

Measurement of Poly-Si Film Thickness on Textured Surfaces by X-Ray Diffraction in Poly-Si/SiOx Passivating Contacts for Monocrystalline Si Solar Cells

Polycrystalline Silicon on tunneling silicon oxide (poly-Si/SiOx) passivating contacts have shown great potential for the next-generation monocrystalline Si (c-Si) industrial photovoltaic technology. However, these cells typically suffer from strong parasitic absorption in the thick front poly-Si layer, which is designed to reduce metal-induced recombination. In previous work, we demonstrated an improved short-circuit current density, Jsc, by thinning the front poly-Si film in an SF6 plasma using the front metal grids as a self-aligned mask, but the sub - 100 nm thick poly-Si film is difficult to measure on an alkaline textured surface. Conventional optical techniques such as spectroscopic ellipsometry cannot be used due to the high scattering nature of the random pyramids. At poly-Si thicknesses below 50 nm, secondary electron microscopy (SEM) has difficulty distinguishing the poly-Si from the underlying c-Si substrate. Here, we demonstrate X-ray diffraction as an effective method to quantitatively measure the front poly-Si thickness. The thickness calculated from the diffraction peak height of the Si(111) crystallographic plane agrees well with the cross-section SEM analysis and simulations using SunSolve. We show that by thinning the front poly-Si from 200 to 60 nm, Jsc increased by 2.4 mA/cm2, while maintaining the same Voc. This led to an absolute efficiency gain of 1.73%. In addition, we also discuss possible reasons for the premature loss of passivation before the removal of all poly-Si, which prevented an even higher gain in Jsc.

light/electron beam induced current↗
DOE OSTI2021

Effect of Cu on the passivity of Ti–xCu (x = 0, 3 and 5 wt%) alloy in phosphate-buffered saline solution within the framework of PDM-II

The effect of copper content on the passivity of Ti–xCu alloys in a phosphate-buffered saline electrolyte (pH 7.4), in the steady-state condition, was examined using potentiostatic polarization, electrochemical impedance spectroscopy, and Mott-Schottky analysis. The study demonstrates that the oxide layer forms on the Ti–xCu alloys surface have n-type semiconducting character, and the steady-state thickness of the oxide layer is observed linearly and depends on the applied potential. The study observations are in line with the predictions of the Point Defect Model (PDM-II), which provides a physiochemically realistic description of the oxide layer formation on Ti–xCu alloys. The observations reveal that the Cu additions result in a decrease in the charge transfer resistance and capacitances associated with the hydroxide and barrier layer, an increase in the donor density, and reduce the electrochemical resistance of the Ti–xCu alloys. The study also exhibits that the decrease in the steady-state current density after the initial addition of 3 wt% of Cu is attributed to the progressive substitution of copper on the cation sublattice of the film resulting in enhanced electrostatic interaction between the immobilized copper $Cu^{x'}_{Ti}$, and the mobile cation interstitials $Cu^{+}_{i}$, which carries the excess current over and that conveyed by oxygen vacancies $V^{••}_o$ in the barrier layer. Moreover, it is also observed that over a hundred-year implant period, about 0.006 cm (0.06 mm) of Ti–3Cu alloy is predicted to lose due to steady-state corrosion in the PBS solution under the given set of conditions, it is further seen that, as the Cu amount increased from 3 wt% to 5 wt% in the Ti–xCu alloys, the steady-state corrosion rate decreases.

Electrochemical Impedance Spectroscopy↗
DOE OSTI2020

Ambient Pressure XPS Investigation of Thermally Stable Halide Perovskite Solar Cells via Post-Treatment

Long-term thermal stability is one limiting factor that impedes the commercialization of perovskite solar cell. Inspired by our prior results from machine learning, we discover that coating a thin layer of 4,4’-dibromotriphenylamine (DBTPA) on top of a CH 3 NH 3 PbI 3 (MAPbI 3 ) thin film can improve the stability of the resultant perovskite solar cells. The passivated perovskite solar cells retained more than 96% of their initial power conversion efficiency over 1000 h at 85 °C in N2 atmosphere without encapsulation. Near-ambient pressure x-ray photoelectron spectroscopy (NAP-XPS) was employed to investigate the evolution of composition and evaluate thermal and moisture stability by in-situ studies. A comparison between pristine MAPbI 3 films and DBTPA-treated films shows the DBTPA treatment suppresses the escape of iodide and methylamine up to 150 °C under 5 mbar humidity. Furthermore, we have used ATR-FTIR and XPS to probe the interactions between DBTPA and MAPbI3 surface. The results prove that DBTPA coordinate with perovskite by Lewis acid-base and cation-π interaction. Compared with the 19.9% efficiency of pristine sample, the champion efficiency of passivated sample reaches 20.6%. Finally, our results reveal DBTPA as a new post-treating molecule that not only leads to the improvement of photovoltaic efficiency but also thermal and moisture stability.

14 SOLAR ENERGY↗
DOE OSTI2021

High Interfacial-Energy and Lithiophilic Janus Interphase Enables Stable Lithium Metal Anodes

The stability of solid electrolyte interphase (SEI) layers is critical for developing lithium (Li) metal batteries. However, the fabrication of stable SEI layers is plagued by un-controlled structures, properties, and functions. In this work a controllable design of an ordered LiF-rich and lithiophilic hybrid Janus interphase (LiF-HJI) is reported using organic fluorination reagent as a functional SEI precursor. The LiF-HJI with a lower crystalline LiF layer and an upper Li organosulfide layer provides high interfacial energy with the Li metal and strong Li-ion affinity, allows homogenous Li-ion distribution, fast and uniform Li-ion transport, and excellent mechanical and passivation properties, enabling stable Li metal anodes under harsh conditions, such as high deposition capacities (6 mA h cm -2 ), current densities (10 mA cm -2 ), and rates (5 C). Stable LiF-HJI@Li greatly improves cycling stability and capacity retention (80.1% after 300 cycles) of Li||LiNi 0.8 Co 0.1 Mn 0.1 O 2 cells at a commercial-level areal capacity (≈4.2 mA h cm -2 ). Even under a lean-electrolyte condition of 3 g Ah -1 , 80% capacity retention can be maintained after 100 cycles, demonstrating excellent cycling performance under such harsh conditions.

25 ENERGY STORAGE↗
DOE OSTI2020

Enhanced Menshutkin S N 2 Reactivity in Mesoporous Silica: The Influence of Surface Catalysis and Confinement

A significant enhancement in the Menshutkin S N 2 reaction between 1-methylimidazole (MeIm) and methyl thiocyanate (MeSCN) is observed when the reaction is confined in the nanoscale silica pores of MCM41 and SBA15. The experiments in the silica pores are conducted without surrounding bulk reaction mixture. The influences of temperature, pore radius, and surface chemistry on the kinetics of the confined reaction are analyzed with time-dependent infrared spectroscopy, molecular dynamics simulations, and ab initio calculations. The rate constant of the pseudo-first order reaction increases with decreasing pore size, and the activation energy is found to decrease by 5.6 kJ/mol in the smallest pore studied (2.8 nm) relative to the bulk reaction. The rate constant dependence on pore size is accurately described by a two-state model in which molecules within the 4.6 Å interfacial layer experience a 2.4-fold rate constant increase relative to those reacting at the bulk rate further away from the interface. The removal of polar silanol groups from the silica surface via passivation with trimethylsilyl chloride results in bulk-like kinetics despite a reduction in the pore diameter, demonstrating the role of silanols as catalytic sites. Here, electronic structure calculations of the energy profile on a model silica surface confirm that silanol groups, particularly those of the vicinal type, can reduce the activation energy and reaction endothermicity through the donation of hydrogen bonds to the reactant, transition state, and product complexes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tailoring Interfaces for Enhanced Methanol Production from Photoelectrochemical CO 2 Reduction

Efficient and stable photoelectrochemical reduction of CO 2 into highly reduced liquid fuels remains a formidable challenge, which requires an innovative semiconductor/catalyst interface to tackle. In this study, we introduce a strategy involving the fabrication of a silicon micropillar array structure coated with a superhydrophobic fluorinated carbon layer for the photoelectrochemical conversion of CO 2 into methanol. The pillars increase the electrode surface area, improve catalyst loading and adhesion without compromising light absorption, and help confine gaseous intermediates near the catalyst surface. The superhydrophobic coating passivates parasitic side reactions and further enhances local accumulation of reaction intermediates. Upon one-electron reduction of the molecular catalyst, the semiconductor–catalyst interface changes from adaptive to buried junctions, providing a sufficient thermodynamic driving force for CO 2 reduction. These structures together create a unique microenvironment for effective reduction of CO 2 to methanol, leading to a remarkable Faradaic efficiency reaching 20% together with a partial current density of 3.4 mA cm –2 , surpassing the previous record based on planar silicon photoelectrodes by a notable factor of 17. Furthermore, this work demonstrates a new pathway for enhancing photoelectrocatalytic CO 2 reduction through meticulous interface and microenvironment tailoring and sets a benchmark for both Faradaic efficiency and current density in solar liquid fuel production.

14 SOLAR ENERGY↗
DOE OSTI2020

Effect of Surface Texture on Pinhole Formation in SiO x -Based Passivated Contacts for High-Performance Silicon Solar Cells

High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiO x layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiO x layer, the charge carriers can cross this layer by tunneling (<2 nm SiO x thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiO x layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiO x contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiO x layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiO x layer. Our results show that the pinholes in the SiO x layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

14 SOLAR ENERGY↗
DOE OSTI2022

Revealing the Transient Formation Dynamics and Optoelectronic Properties of 2D Ruddlesden–Popper Phases on 3D Perovskites

Using in situ photoluminescence measurements during the spin-coating and annealing steps, this study probes the formation of 2D layers on 3D triple cation perovskite films comparing phenylethylammonium and 2-thiophenemethylammonium iodide bulky cations. This study elucidates the formation mechanisms of the surface layers for both cases and reveals two regimes during 2D layer formation: a kinetic-driven and a thermodynamic-driven process. These driving forces result in different compositions of the 2D/3D interface for each treatment, namely, different ratios of pure 2D (n = 1) and quasi-2D (n > 1) structures. Further, this study shows that a higher ratio of quasi-2D phases is more beneficial for device performance, as pure-2D layers may hamper current extraction. Due to a more evenly distributed formation energy profile among 2D and quasi-2D phases, highly concentrated 2-thiophenemethylammonium iodide appears to be more suited for effective surface passivation than its phenylethylammonium analog.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effect of lithium diffusion into Ga 2 O 3 thin films

The integration of lithium based compounds (e.g., Li:NiO/Ga 2 O 3 , LiGa 5 O 8 /Ga 2 O 3 ) in Ga 2 O 3 based pn-heterojunctions raises concerns about interface stability, i.e., Li diffusion effects on Ga 2 O 3 properties. In this work the ex-situ diffusion of Li is investigated in three different Ga 2 O 3 epilayers systems [(001) κ-Ga 2 O 3 and (−201) β-Ga2O3 heteroepitaxy on (001) α-Al 2 O 3 , and (010) β-Ga 2 O 3 homoepitaxy] at relevant temperatures for the synthesis / processing of Li-based epilayers. It is here experimentally demonstrated and quantified the Li diffusion in all the investigated Ga 2 O 3 epilayers systems and Li bulk (D Li,bulk ) and 2D defects (D Li,2D ) diffusion coefficients are provided. In the case of the (010) β-Ga 2 O 3 homoepitaxial layer (nominally free of structural defects), hybrid functional theory calculations foresee a diffusion mechanism mediated by Ga vacancies (VGa). Moreover, in the (010) β-Ga 2 O 3 homo-layer a significant effect on its functional properties (e.g., additional Raman vibrational modes, induced conductivity in an otherwise insulating sample) upon the Li-diffusion process is experimentally highlighted and tentatively related to the passivation of acceptor defects (i.e., formation of V Ga -nLi complexes).

Defects↗
DOE OSTI2020

A data analytical approach for assessing the efficacy of Operational Technology active defenses against insider threats

In recent years, the need for Operational Technology (OT) defenses has been recognized, serving as an additional line of defense when Information Technology (IT) defenses are bypassed. This is no longer considered an uncommon possibility when dealing with advanced persistent threat (APT) actors expected to be state-sponsored and receiving insider assistance. In these extreme adversarial situations, OT defenses aim to provide another layer of defense for the system, introduced directly at the physical process level, as described by the sensors data, the system model, and control actions. Just like IT defenses, two schools of thought, i.e., passive and active defenses, have emerged to address this challenge. In active defenses, representing the focus of this paper, known signatures, synthesized based on the system's unique characteristics, are inserted into the system. In contradistinction, passive methods rely solely on observing system behavior in search of patterns of normal behavior with deviations thereof representing abnormal behavior. In their most sophisticated implementations, both passive and active defenses rely on the use of data analytics to identify the patterns and synthesize the observed and/or inserted signatures. Past research has shown that passive defenses may be bypassed by APT actors relying on data analytics and their intimate knowledge of the system to evade detection by respecting the patterns identified by the defenders. Here this manuscript explores the use of active defenses under the assumption that the attacker has privileged access to the system, including access to the system's model and sensors data. Specifically, this manuscript assesses the ability of active defenses to remain invisible to the attackers, and discusses the associated challenges that must be addressed to ensure their resiliency against APT actors.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗