Physics Informed Machine Learning for Rapid Defect Characterization of crystalline materials
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Abstract not provided.
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A poster detailing work performed by interns last summer with some additional work done at Penn State on C7 devices. There is no mention of SOI, BUSFETs, or other CMOS7 process details.
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SiSn alloys have attracted growing interest for group-IV bandgap engineering, although their epitaxial growth remains challenging due to the extremely low equilibrium solubility of Sn in Si. In this work, fully strained (pseudomorphic) SiSn epitaxial layers were grown on Si (001) substrates by means of molecular beam epitaxy. A systematic investigation reveals a strong inverse correlation between growth temperature and Sn incorporation efficiency. Despite a constant Sn flux, the incorporated Sn composition decreases from 5.5% to 3.2% as the growth temperature increases, indicating a pronounced temperature dependence of Sn incorporation. Reflection high-energy electron diffraction indicates a gradual transition of the growth from two-dimensional to three-dimensional with increasing film thickness. Structural characterization by means of X-ray diffraction, atomic force microscopy, and transmission electron microscopy confirms the pseudomorphic growth and smooth surface morphology and reveals twins and stacking faults near the surface region. These results establish a quantitative reference for SiSn growth kinetics and provide guidance for future studies of SiSn and SiGeSn alloys in silicon-compatible electronic and optoelectronic applications.
The effects of neutron irradiation temperature and dose on thermal diffusivity are compared between non-irradiated and in-pile irradiated MgO samples. MgO pellets were irradiated in-pile of the Advanced Test Reactor at Idaho National Laboratory. Samples were irradiated at 623 and 973 K to fast neutron fluences of 1 x 1025 (1.5 dpa) and 2 x 1025 n/m2 (3 dpa). Post irradiation examination included X-ray diffraction, scanning electron microscopy, laser flash thermal diffusivity, and transmission electron microscopy. The radiation induced thermophysical and structural evolution of MgO is reported
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