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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
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NASA NTRS1988

Short wavelength 128 by 128 focal plane arrays for remote sensing applications

Short-wavelength (1-2.5-micron) 128x128 focal plane arrays have been fabricated and demonstrated with high pixel yields and dark-current-limited performance. The detector material is HgCdTe grown by LPE on a sapphire substrate which yields high-performance uniform detectors. The detector arrays were characterized at temperatures of 80-150 K; the peak quantum efficiency at 2.4 microns is 80 percent. The multiplexer is a Reticon FET switch with output amplifiers. It is noted that the long-term goal of this project is to develop a 150x1000 mosaicked focal plane for use in the HIRIS instrument on the Earth Observing System.

Bothwell, Mary↗
NASA NTRS1988

Narrow far fields from extended-window broad-area lasers

Broad-area lasers are fabricated with a long (80-100 microns), nonabsorbing window at each end. The window is shown to dramatically improve the spatial mode properties, stabilizing and smoothing the near field, and reducing the far field from 5-15 deg to as low as 2 deg. This improvement comes at the expense of an increase in threshold current and a reduction of quantum efficiency.

Lang, Robert J.↗
NASA NTRS1988

Mid-infrared solid-state lasers and laser materials

An account is given of NASA-Langley's objectives for the development of advanced lasers and laser materials systems applicable to remote sensing in the mid-IR range. Prominent among current concerns are fiber-optic spectroscopy, eye-safe solid-state lasers for both Doppler sensing and mid-IR wavelength-generation laser pumping, and nonlinear optics generating tunable mid-IR radiation. Ho:YAG lasers are noted to exhibit intrinsic advantages for the desired applications, and are pumpable by GaAlAs laser diodes with a quantum efficiency approaching 2.

Barnes, Norman P.↗
NASA NTRS1988

Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

Kenimer, R. L.↗
NASA NTRS1988

Development of the RAIDS extreme ultraviolet wedge and strip detector

In the next few years the Remote Atmospheric and Ionospheric Detector System (RAIDS) package will be flown on a Tiros spacecraft. The EUV spectrometer experiment contains a position-sensitive detector based on wedge and strip anode technology. A detector design has been implemented in brazed alumina and kovar to provide a rugged bakeable housing and anode. A stack of three 80:1 microchannel plates is operated at 3500-4100 V. to achieve a gain of about 10 to the 7th. The top MCP is to be coated with MgF for increased quantum efficiency in the range of 50-115 nm. A summary of fabrication techniques and detector performance characteristics is presented.

Kayser, D. C.↗
NASA NTRS1989

Blocked impurity band hybrid infrared focal plane arrays for astronomy

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

Reynolds, D. B.↗
NASA NTRS1988

Design considerations for soft X-ray television imaging detectors

Television sensors for X-rays can be coupled to converters and image intensifiers to obtain active areas, high flux capabilities, quantum efficiency, high time resolution, or ease of construction and operation that may not be obtained with a directly illuminated sensor. A general purpose system which makes use of these capabilities for a number of applications is decribed. Some of the performance characteristics of this type of system are examined, and the expected future developments for such systems are briefly addressed.

Kalata, Kenneth↗
NASA NTRS1988

High resolution X-ray spectroscopy using microcalorimeters

The use of microcalorimeters for high-resolution, high quantum efficiency, nondispersive X-ray spectroscopy has been demonstrated over the past few years. In this paper, the principles of X-ray calorimetry are reviewed, and the results of ongoing X-ray tests using microcalorimetry are summarized. An approach to building an X-ray calorimeter spectrometer is discussed.

Kelley, R. L.↗
NASA NTRS1988

Synchrotron radiation calibration of the EUVE variable line-spaced diffraction gratings at the NBS SURF II facility

The Extreme Ultraviolet Explorer (EUVE) has a spectrometer which utilizes variable line-spaced, plane diffraction gratings in the converging beam of a Wolter-Schwarzschild type II mirror. The gratings, microchannel plate detector, and thin film filters have been calibrated with continuum radiation provided by the NBS SURF II facility. These were calibrated in a continuum beam to find edges or other sharp spectral features in the transmission of the filters, quantum efficiency of the microchannel plate detector, and efficiency of the gratings. The details of the calibration procedure and the results of the calibration are presented.

Jelinsky, P.↗
NASA NTRS1990

Layered Internal-Photoemission Sensor

High quantum efficiency achieved without multiple layer contacts. Proposed infrared sensor based on photoemission from multiple layers of metal silicide sandwiched between layers of silicon. Suitable for use in focal-plane arrays. Layered internal-photoemission sensor has positive/intrinsic/negative structure modified by inclusion of layers or islands of metal silicide. Holes photo-excited from silicide regions and swept to detection by reverse-bias electric field in intrinsic silicon. Easier to make because internal layers allowed to "float" electrically, contact being made with only two outer semiconductor layers.

Fathauer, Robert W.↗
NASA NTRS1990

Nitric Oxide Enhances Charge-Coupled Device

Simple treatment increases and stabilizes quantum efficiency of charge-coupled-device photodetector illuminated on back surface at wavelengths less than 4,500 Angstrom. Must be biased in strong accumulation mode. Physical principle of enhancement explained more fully in "Metal Film Increases CCD Output" (NPO-16815). Useful for imaging at wavelengths from ultraviolet to blue; for example, in astronomical observations.

Hecht, Michael H.↗
NASA NTRS1990

Silicide Schottky Barrier For Back-Surface-Illuminated CCD

Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).

Hecht, Michael H.↗
NASA NTRS1990

Multi-Pinned-Phase Charge-Coupled Device

Multi-pinned-phase (MPP) technology allows charge-coupled device (CCD) to operate totally inverted during both integration and readout while maintaining other performance characteristics. MPP-CCD made with positive doping implants defining barrier phases. When all phases biased together into inversion, dark current reduced, and potential of charge-collecting wells is difference between potentials of barrier and collection phases. Advantages include complete elimination of residual image effects during integration and readout, low pixel nonuniformity, and increase in quantum efficiency in near infrared because higher operating temperatures used. More tolerant to ionizing radiation environments.

Janesick, James R.↗
NASA NTRS1988

Development of FIR arrays with integrating amplifiers

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Young, Erick T.↗
NASA NTRS1989

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Krabach, Timothy N.↗
NASA NTRS1989

Infrared ground-based astronomy with the Hughes 256 X 256 PtSi array

It is shown that large format PtSi Schottky diode infrared arrays, the Hughes 256 X 256 hybrid Schottky array in particular, are competitive alternatives to the smaller format photovoltaic arrays for ground-based astronomy. The modest quantum efficiency of the PtSi compared to the photovoltaic devices is more than compensated for by the larger format. The use of hybrid technology yields effective fill factors of nearly 100 percent, and the low dark current, noise, excellent imaging characteristics, cost, and solid nitrogen operating temperature add to the effectiveness of this array for ground-based imaging. In addition to discussing the characteristics of this array, researchers present laboratory test data and astronomical results achieved at Kitt Peak.

Fowler, A.↗
NASA NTRS1989

Short wavelength HgCdTe staring focal plane for low background astronomy applications

The design of a 128x128 staring short wave infrared (SWIR) HgCdTe focal plane incorporating charge integrating transimpedance input preamplifiers is presented. The preamplifiers improve device linearity and uniformity, and provide signal gain ahead of the miltiplexer and readout circuitry. Detector's with cutoff wavelength of 2.5 microns and operated at 80 K have demonstrated impedances in excess of 10(exp 16) ohms with 60 percent quantum efficiency. Focal plane performance using a smaller format device is presented which demonstrates the potential of this approach. Although the design is capable of achieving less than 30 rms electrons with todays technology, initial small format devices demonstrated a read noise of 100 rms electrons and were limited by the atypical high noise performance of the silicon process run. Luminescence from the active silicon circuitry in the multiplexer limits the minimum detector current to a few hundred electrons per second. Approaches to eliminate this excessive source of current is presented which should allow the focal plane to achieve detector background limited performance.

Hall, D.↗
NASA NTRS1989

Low noise HgCdTe 128 x 128 SWIR FPA for Hubble space telescope

Large area focal plane arrays of unprecedented performance were developed for use in Near Infrared Camera and Multi-Object Spectrometer (NICMOS), a proposed Hubble Space Telescope refurbishment instrument. These FPAs are 128x128-element, HgCdTe hybrid arrays with a cutoff wavelength of 2.5 microns. The multiplexer consists of a CMOS field effect transistor switch array with a typical mean readout noise of less than 30 electrons. The detectors typically have a mean dark current of less than 10 electrons/s at 77 K, with currents below 2 electrons measured at 60 K (both at 0.5 V reverse bias). The mean quantum efficiency is 40 to 60 percent at 77 K for 1.0 to 2.4 microns. Functional pixel yield is typically greater than 99 percent, and the power consumption is approximately 0.2 mW (during readout only).

Blessinger, Michael↗