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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Measuring Electrical Resistivity Of Compacted Powder

Slightly modified micrometer used in conjunction with special cup to measure electrical resistance of specimen of powder as function of packing fraction. Powder pressed between anvils of micrometer, which make electrical contact with specimen. Device used in manufacturing batteries to determine effective electrical conductivities of powders loaded into plastic sheets to make battery substrates. Coupled with good mathematical description of expected conductivity of particulate composite as function of packing density. Also serves as tool for evaluating conductivity of dispersed phase, as well as evaluating electrical resistances of interparticle contacts.

Shlichta, Paul J.↗
NASA NTRS2010

New Technology for Microfabrication and Testing of a Thermoelectric Device for Generating Mobile Electrical Power

We report the results of fabrication and testing of a thermoelectric power generation module. The module was fabricated using a new "flip-chip" module assembly technique that is scalable and modular. This technique results in a low value of contact resistivity ( < or = 10(exp 5) Ohms-sq cm). It can be used to leverage new advances in thin-film and nanostructured materials for the fabrication of new miniature thermoelectric devices. It may also enable monolithic integration of large devices or tandem arrays of devices on flexible or curved surfaces. Under mild testing, a power of 22 mW/sq cm was obtained from small (<100 K) temperature differences. At higher, more realistic temperature differences, approx.500 K, where the efficiency of these materials greatly improves, this power density would scale to between 0.5 and 1 Watt/cm2. These results highlight the excellent potential for the generation and scavenging of electrical power of practical and usable magnitude for remote applications using thermoelectric power generation technologies.

Prasad, Narashimha S.↗
NASA NTRS1977

All-tantalum electrolytic capacitor

Device uses single-compression tantalum-to-tantalum seal. Single-compression seal allows better utilization of volume within device. As result of all-tantalum case and lengthened cathode, electrical parameters, particularly equivalent series resistance and capacitance stability, improved over silver-cased capacitor.

Green, G. E., Jr.↗
NASA NTRS1979

Model task for the dynamics of an underwater two-legged walker

A model task of two-legged underwater walking was examined. Characteristics of the walking were established. The underwater walking device is a substantial sphere, which moves on dual-member legs. The dynamics of the device were investigated with the calculation of the buoyancy of Archimedes, and the force of hydrodynamic resistance.

Beletskiy, V. V.↗
NASA NTRS1984

Formation of planar n(+) pockets in GaAs for mixer diode fabrication

A novel technique has been developed to produce n(+) 'pockets' in semiinsulating GaAs bulk material. This technique has produced thick pockets of highly conducting epitaxial material on the substrate surface. The pockets were formed by the growth of a liquid-phase epitaxial (LPE) layer into holes which had been etched into the substrate. Surface uniformity was obtained by chemo-mechanically polishing the substrate surface under tightly controlled conditions. Polishing rates as low as 0.2 micron/min have been obtained. Photographs taken of the pocket cross-sectional area have revealed that growth occurred throughout the entire pocket region. Growth was even found to have occurred along the irregularly shape walls of the packets. The continuous growth throughout the pockets coupled with the subsequent polishing of the substrate have produced exceptionally smooth and planar surfaces. Thicknesses as great as 10 microns have been obtained for the n(+) pockets using this technique. Mixer diodes have been fabricated onto these layers and tested. Preliminary dc measurements taken on these devices have yielded a zero-biased cutoff frequency (Fco) of 800 GHz with a series resistance (Rs) of 6 omega and a zero-biased capacitance (Co) of 30 fF.

Griffin, J. A.↗
NASA NTRS1985

HEMT 60 GHz amplifier

A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.

Berenz, J.↗
NASA NTRS1988

Electronic states of semiconductor-metal-semiconductor quantum-well structures

Quantum-size effects are calculated in thin layered semiconductor-metal-semiconductor structures using an ideal free-electron model for the metal layer. The results suggest new quantum-well structures having device applications. Structures with sufficiently high-quality interfaces should exhibit effects such as negative differential resistance due to tunneling between allowed states. Similarly, optical detection by intersubband absorption may be possible. Ultrathin metal layers are predicted to behave as high-density dopant sheets.

Huberman, M. L.↗
NASA NTRS1990

Photovoltaic options for solar electric propulsion

During the past decade, a number of advances have occurred in solar cell and array technology. These advances have lead to performance improvement for both conventional space arrays and for advanced technology arrays. Performance enhancements have occurred in power density, specific power, and environmental capability. Both state-of-the-art and advanced development cells and array technology are discussed. Present technology will include rigid, rollout, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is also discussed based on both DOD and NASA efforts. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency, thin, radiation resistant cells is examined. This includes gallium arsenide on germaniun substrates, indium phosphide, and thin film devices such as copper indium diselenide.

Stella, Paul M.↗
NASA NTRS1991

Thin-film power-density meter for millimeter wavelengths

A quasi-optical power density meter for millimeter and submillimeter wavelengths has been developed. The device is a 2-cm2 thin-film bismuth bolometer deposited on a mylar membrane. The resistance responsivity is 150 Ohms/W, and the time constant is 1 min. The meter is calibrated at DC. The bolometer is much thinner than a wavelength, and can thus be modeled as a lumped resistance in a transmission-line equivalent circuit. The absorption coefficient is 0.5 for 189-Ohms/square film. The power-density meter has been used to measure absolute power densities for millimeter-wave antenna efficiency measurements. Absolute power densities of 0.5 mW/sq cm have been measured to an estimated accuracy of 5 percent.

Lee, Karen A.↗
NASA NTRS1985

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Tombrello, Thomas A.↗
NASA NTRS2007

Silicon carbide and other films and method of deposition

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Mehregany, Mehran↗
NASA NTRS2010

Low-Friction, Low-Profile, High-Moment Two-Axis Joint

The two-axis joint is a mechanical device that provides two-degrees-of-freedom motion between connected components. A compact, moment-resistant, two-axis joint is used to connect an electromechanical actuator to its driven structural members. Due to the requirements of the overall mechanism, the joint has a low profile to fit within the allowable space, low friction, and high moment-reacting capability. The mechanical arrangement of this joint can withstand high moments when loads are applied. These features allow the joint to be used in tight spaces where a high load capability is required, as well as in applications where penetrating the mounting surface is not an option or where surface mounting is required. The joint consists of one base, one clevis, one cap, two needle bearings, and a circular shim. The base of the joint is the housing (the base and the cap together), and is connected to the grounding structure via fasteners and a bolt pattern. Captive within the housing, between the base and the cap, are the rotating clevis and the needle bearings. The clevis is attached to the mechanical system (linear actuator) via a pin. This pin, and the rotational movement of the clevis with respect to the housing, provides two rotational degrees of freedom. The larger diameter flange of the clevis is sandwiched between a pair of needle bearings, one on each side of the flange. During the assembly of the two-axis joint, the circular shims are used to adjust the amount of preload that is applied to the needle bearings. The above arrangement enables the joint to handle high moments with minimal friction. To achieve the high-moment capability within a low-profile joint, the use of depth of engagement (like that of a conventional rotating shaft) to react moment is replaced with planar engagement parallel to the mounting surface. The needle bearings with the clevis flange provide the surface area to react the clevis loads/moments into the joint housing while providing minimal friction during rotation. The diameter of the flange and the bearings can be increased to react higher loads and still maintain a compact surface mounting capability. This type of joint can be used in a wide variety of mechanisms and mechanical systems. It is especially effective where precise, smooth, continuous motion is required. For example, the joint can be used at the end of a linear actuator that is required to extend and rotate simultaneously. The current design application is for use in a spacecraft docking-system capture mechanism. Other applications might include industrial robotic or assembly line apparatuses, positioning systems, or in the motion-based simulator industry that employs complex, multi-axis manipulators for various types of motions.

Lewis, James L.↗
NASA NTRS2010

Special Component Designs for Differential-Amplifier MMICs

Special designs of two types of electronic components transistors and transmission lines have been conceived to optimize the performances of these components as parts of waveguide-embedded differential-amplifier monolithic microwave integrated circuits (MMICs) of the type described in the immediately preceding article. These designs address the following two issues, the combination of which is unique to these particular MMICs: Each MMIC includes a differential double-strip transmission line that typically has an impedance between 60 and 100 W. However, for purposes of matching of impedances, transmission lines having lower impedances are also needed. The transistors in each MMIC are, more specifically, one or more pair(s) of InP-based high-electron-mobility transistors (HEMTs). Heretofore, it has been common practice to fabricate each such pair as a single device configured in the side-to-side electrode sequence source/gate/drain/gate/source. This configuration enables low-inductance source grounding from the sides of the device. However, this configuration is not suitable for differential operation, in which it is necessary to drive the gates differentially and to feed the output from the drain electrodes differentially. The special transmission-line design provides for three conductors, instead of two, in places where lower impedance is needed. The third conductor is a metal strip placed underneath the differential double-strip transmission line. The third conductor increases the capacitance per unit length of the transmission line by such an amount as to reduce the impedance to between 5 and 15 W. In the special HEMT-pair design, the side-to-side electrode sequence is changed to drain/gate/source/gate/ drain. In addition, the size of the source is reduced significantly, relative to corresponding sizes in prior designs. This reduction is justified by the fact that, by virtue of the differential configuration, the device has an internal virtual ground, and therefore there is no need for a low-resistance contact between the source and the radio-frequency circuitry. The source contact is needed only for DC biasing. These designs were implemented in a single-stage-amplifier MMIC. In a test at a frequency of 305 GHz, the amplifier embedded in a waveguide exhibited a gain of 0 dB; after correcting for the loss in the waveguide, the amplifier was found to afford a gain of 0.9 dB. In a test at 220 GHz, the overall gain of the amplifier- and-waveguide assembly was found to be 3.5 dB.

Kangaslahti, Pekka↗
NASA NTRS2011

Silicon carbide and other films and method of deposition

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Mehregany, Mehran↗
NASA NTRS2012

Composition Comprising Silicon Carbide

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Mehregany, Mehran↗
NASA NTRSDate not supplied

Re-Architecting the NASA Wire Derating Approach

• Design of wiring for aerospace vehicles relies on an understanding of “ampacity,” which refers to the current carrying capacity of wires, individually or in wire bundles. • Designers rely on standards to derate allowable current flow to prevent exceedance of wire temperature limits due to resistive heat dissipation within the wires or wire bundles. Designers select wire sizing and circuit protective device settings/sizing based on the standards. • Exceeding the wire temperature rating can result in electrical, physical, and/or chemical degradation of the wiring insulation and conductor which could lead to a catastrophic failure. • These standards can add considerable margin, in some cases underestimate the margin and are based on empirical data that is no longer available for review.

Steven L Rickman↗
NASA NTRSDate not supplied

Three Dimensional Instantaneous Spray Measurements of Additively Manufactured Candidate Injector Schemes at Varying Pressure Drops

Additively manufactured (AM) injectors have the potential to improve upon the combustion performance achieved using traditionally manufactured (TM) injectors. Traditionally manufactured injector combustion performance decreases greatly in off-design conditions. Additively manufactured injectors hold the potential to sustain high combustion performance over a broader range of operating conditions than currently seen in TM injectors. Additively manufactured injectors promise to offer higher resistances to instability and achieve better overall propellant mixing and atomization for all types of combustion devices. This study expands upon previous studies that used 2-D imaging techniques to characterize the injector spray pattern of candidate AM injector elements. In this study, 3-D instantaneous measurements of the injector spray pattern are taken, allowing for deeper insight into the liquid spray breakup, an inherently 3-D phenomena. Stereo imaging is used for three dimensional analysis, which utilizes two cameras at different angles to reconstruct a three dimensional reconstruction. With this information, AM injectors can be designed to improve propellant mixing and atomization and reduce breakup length. As part of this work, a high-pressure, cold flow experimental spray facility was modified to measure each injector’s spray characteristics in terms of 𝑅𝑒 𝐿 and 𝑊𝑒 𝑔 . This facility is operated to capture instantaneous stereo photographic images, mass flow rates, and injector element thrust for pressure drop across the injector face ranging from 100 to 200 psig at a stiffness ratio of 1.0.

Murphy Mitchell↗