Efficiency calculations for Al/x/Ga/1-x/As-GaAs heteroface solar cells
A computer-assisted analysis of the Al(x)Ga(1-x)As-GaAs heteroface solar cell is done to find the dependence of cell efficiency on substrate doping level. Assumptions for carrier lifetime needed for the evaluation of efficiency are based on measurements of experimental Al(x)Ga(1-x)As-GaAs heteroface cells. The results show the doping range 10 to the 16th-17th power per cu cm to be the best for heteroface solar cells. Calculations based on a three-halves temperature dependence for lifetimes agree well with early experimental efficiency versus temperature measurements on GaAs cells, but conflict with earlier results for an Al(x)Ga(1-x)As-GaAs heteroface cell.