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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

The effect of high-energy electron radiation on poly(arylene ether)s

Thin films of four experimental poly(arylene ether)s of similar chemical structure were exposed to 1 MeV electrons while under high vacuum. The films received total exposures of 5 x 10 exp 7 and 1 x 10 exp 9 rads at a dose rate of 5 x 10 exp 7 rads/h and a pressure of 2 x 10 exp -7 torr. Films exposed to 5 x 10 exp 7 rads showed dramatic changes in molecular weight distribution. After exposures of 1 x 10 exp 9 rads the films were only partially soluble in chloroform and exhibited no detectable changes in the glass transition temperatures. Thin-film tensile properties were also altered by the exposure to electron radiation. The effect of the exposures as determined by various analyses is discussed.

Connell, J. W.↗
NASA NTRS1989

Radiation effects in spacecraft electronics

Effects on the internal spacecraft electronics due to exposure to the natural and enhanced space radiation environment will be reviewed. The emphasis will be placed on the description of the nature of both the exposure environment and failure mechanisms in semiconductors. Understanding both the system environment and device effects is critical in the use of laboratory simulation environments to obtain the data necessary to design and qualify components for successful application.

Raymond, James P.↗
NASA NTRS1989

Effects of space radiation on electronic microcircuits

The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined. Single event upset is defined as a lasting, reversible change in the state of a multistable (usually bistable) electronic circuit such as a flip-flop or latch. In a computer memory, SEUs manifest themselves as unexplained bit flips. Since latchup is in general caused by a single event of short duration, the single event part of the SEL term is superfluous. Nevertheless, it is used customarily to differentiate latchup due to a single heavy charged particle striking a sensitive cell from more ordinary kinds of latchup. Single event burnout (SEB) refers usually to total instantaneous failure of a power FET when struck by a single particle, with the device shorting out the power supply. An unforeseen failure of these kinds can be catastrophic to a space mission, and the possibilities are discussed.

Kolasinski, W. A.↗
NASA NTRS2017

Current Status and Future Challenges in Risk-Based Radiation Engineering

This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.

Total Ionizing Dose (TID)↗
NASA NTRS1985

Radiation effects on selected electronics parts from the solar max satellite

The Solar Maximum Satellite was launched on February 14, 1980. Problems with the Main Electronics Box (MEB) were experienced in the period July 10 to September 30, 1980. Failure occurred in the October to November time frame. Replacement of the Main Electronic Box (MEB) was performed in April 1984. The failed original MEB was returned to Earth and offered an opportunity to study some electronic parts which had spent 50 months in the natural radiation environment of a low Earth orbit (LEO) spacecraft. Spare parts were annealed at ambient temperatures on the ground. Dose rate effects between the flight and laboratory environments were compared.

R H Maurer↗
NASA NTRS1999

Spacecraft Environments Interactive: Space Radiation and Its Effects on Electronic System

The natural space environment is characterized by complex and subtle phenomena hostile to spacecraft. Effects of these phenomena impact spacecraft design, development, and operation. Space systems become increasingly susceptible to the space environment as use of composite materials and smaller, faster electronics increases. This trend makes an understanding of space radiation and its effects on electronic systems essential to accomplish overall mission objectives, especially in the current climate of smaller/better/cheaper faster. This primer outlines the radiation environments encountered in space, discusses regions and types of radiation, applies the information to effects that these environments have on electronic systems, addresses design guidelines and system reliability, and stresses the importance of early involvement of radiation specialists in mission planning, system design, and design review (part-by-part verification).

Howard, J. W., Jr.↗
NASA NTRS1982

Effect of electron flux on radiation damage in GaAs solar cells

The objective of this work was to evaluate the effect of electron flux and temperature on radiation damage in GaAs solar cells. The defect levels and the power ratio of the GaAs solar cells under various irradiation conditions are compared. In a 200 C continuous annealing experiment, the GaAs solar cells which were irradiated at a flux of 2 x 10 to the 9th e/sq cm s suffered less power degradation than the cells which were irradiated at the same temperature at a higher flux of 4 x 10 to the 10th e/sq cm s. After the continuous annealing experiment, a single-step post annealing at 200 C was performed for 40 hr on these irradiated cells. An additional improvement in power recovery was observed only on those cells irradiated at the high flux of 4 x 10 to the 10th e/sq cm s. DLTS data indicate that the defect density decreases with lower electron flux. Both of these observations strongly suggest that the continuous annealing in GaAs cells can be effective at temperatures as low as 150 C, or even less in a space environment such as geosynchronous orbit.

Loo, R. Y.↗
NASA NTRS1972

Radiation damage effects by electrons, protons, and neutrons in Si/Li/ detectors.

The degradation in performance of lithium-compensated silicon nuclear particle detectors induced by irradiation at room temperature with 0.6-MeV and 1.5-MeV electrons, 1.9-MeV protons, and fast neutrons from a plutonium-beryllium source has been investigated. With increasing fluence, the irradiations produced an increase of detector leakage current, noise, capacitance, and a degradation in the performance of the detector as a charged-particle energy spectrometer. Following the irradiations, annealing effects were observed when the detectors were reverse-biased at their recommended operating voltages. Upon removal of bias, a continuous degradation of detector performance characteristics occurred. Detectors which had been damaged by electrons and protons exhibited a stabilization in their characteristics within two weeks after irradiation, whereas detectors damaged by neutrons had a continuous degradation of performance over a period of several months.

Liu, Y. M.↗