Search NASA⌕ Search

SEARCH · Search NASA

Results for “Latchup”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

The Single Event Effect Characteristics of the 486-DX4 Microprocessor

This research describes the development of an experimental radiation testing environment to investigate the single event effect (SEE) susceptibility of the 486-DX4 microprocessor. SEE effects are caused by radiation particles that disrupt the logic state of an operating semiconductor, and include single event upsets (SEU) and single event latchup (SEL). The relevance of this work can be applied directly to digital devices that are used in spaceflight computer systems. The 486-DX4 is a powerful commercial microprocessor that is currently under consideration for use in several spaceflight systems. As part of its selection process, it must be rigorously tested to determine its overall reliability in the space environment, including its radiation susceptibility. The goal of this research is to experimentally test and characterize the single event effects of the 486-DX4 microprocessor using a cyclotron facility as the fault-injection source. The test philosophy is to focus on the "operational susceptibility," by executing real software and monitoring for errors while the device is under irradiation. This research encompasses both experimental and analytical techniques, and yields a characterization of the 486-DX4's behavior for different operating modes. Additionally, the test methodology can accommodate a wide range of digital devices, such as microprocessors, microcontrollers, ASICS, and memory modules, for future testing. The goals were achieved by testing with three heavy-ion species to provide different linear energy transfer rates, and a total of six microprocessor parts were tested from two different vendors. A consistent set of error modes were identified that indicate the manner in which the errors were detected in the processor. The upset cross-section curves were calculated for each error mode, and the SEU threshold and saturation levels were identified for each processor. Results show a distinct difference in the upset rate for different configurations of the on-chip cache, as well as proving that one vendor is superior to the other in terms of latchup susceptibility. Results from this testing were also used to provide a mean-time-between-failure estimate of the 486-DX4 operating in the radiation environment for the International Space Station.

Kouba, Coy↗
NASA NTRS1998

Verification and Quantification of Single Event Effects on High Speed SRAM in Terrestrial Environments

As integrated circuits become more sensitive to charged particles and neutrons, anomalous performance due to single event effects (SEE) is a concern and requires experimental verification and quantification. The Center for Applied Radiation Research (CARR) at Prairie View A&M University has developed experiments as a participant in the NASA ER-2 Flight Program, the APEX balloon flight program and the Student Launch Program. Other high altitude and ground level experiments of interest to DoD and commercial applications are being developed. The experiment characterizes the SEE behavior of high speed and high density SRAM's. The system includes a PC-104 computer unit, an optical drive for storage, a test board with the components under test, and a latchup detection and reset unit. The test program will continuously monitor the stored checkerboard data pattern in the SW and record errors. Since both the computer and the optical drive contain integrated circuits, they are also vulnerable to radiation effects. A latchup detection unit with discrete components will monitor the test program and reset the system when necessary. The first results will be obtained from the NASA ER-2 flights, which are now planned to take place in early 1998 from Dryden Research Center in California. The series of flights, at altitudes up to 70,000 feet, and a variety of flight profiles should yield a distribution of conditions for correlating SEES. SEE measurements will be performed from the time of aircraft power-up on the ground throughout the flight regime until systems power-off after landing.

Huff, H.↗
NASA NTRS2000

Outline: Recent work at JPL Under MSREP

MSREP is a multi-faceted program with radiation effects in new technologies, development of testing and hardness assurance methods, continual evaluation of space and laboratory test data and support to NASA Projects. Other work in progress includes: 1) Device Scaling and New Phenomena; 2) Radiation Effects in Microprocessors; 3) Latchup Testing and Latchup Mitigation; and 4) Revised Radiation Design Approaches. This paper is in viewgraph form.

Source record↗
NASA NTRS2021

SEE Test Report for Texas Instruments LMV7219 7 ns, 2.7 V to 5 V Comparator with Rail-to-Rail Output

The primary purpose of this testing is to characterize the Texas Instruments LMV7219 comparator for single-event latchup (SEL) susceptibility. These data will be used to assess the Single-Event Latchup (SEL) risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the comparator to single-event transients (SET) and other nondestructive Single-Event Effects (SEE).

Raymond Ladbury↗
NASA NTRS1996

Device Responses and Effects

This section of the short course discusses radiation effects in semiconductor devices. This is a broad topic, and it is not possible to cover all aspects in a course of this length. The approach that will be used is to briefly review basic mechanisms and device responses, and to go into more detail for new topics such as latchup that have not been covered in as much detail in previous short courses.

radiation effects semiconductor devices semiconduc↗
NASA NTRS1995

Trends in Device SEE Susceptibility from Heavy Ions

The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.

single event effects latchup radiation hardening↗
NASA NTRS2017

An Improved SEL Test of the ADV212 Video Codec

Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.

Single-event effect (SEE); microelectronic devices↗
NASA NTRS2015

Heavy Ion Test Results of the Vishay DG403DY-E3 Analog Switch

This study was undertaken to determine the Single Event Latchup (SEL) susceptibility of the Vishay DG403DY-E3 (Analog Switch). The device was under a biased and switching configuration during irradiation and continuously monitored for destructive events. The parts were tested at the Lawrence Berkeley National Laboratory 88 inch cyclotron facility

Single Event Latchup (SEL)↗
NASA NTRS1995

Transient Structure Current Generated by the Activation of a Squib Device

Experimental measurements of the currents in pyro-activation circuits show that a structure current is generated during the pyro-activation process. This current is a transient current and is an intense source of electromagnetic interference. Analysis has indicated that the noise voltage induced on candidate victim circuits is sufficient to cause circuit upset and/or latchup. A survey of flight anomaly records has also correlated the occurrence of anomalies with the pyro-activation process. Detailed analyses, taking the spacecraft cabling configuration and circuit sensitivities into account, have shown that the structure current induced noise voltage could definitely be the cause of the anomalies. The threat of the structure current due to pyro-activation can be alleviated by isolating the pyro-activation circuit from ground and by proper arrangement of the cables in sensitive circuits.

pyrotechnic↗
NASA NTRS2021

Single-Event Effect Test Report Analog Devices LTC1604AIG#90117 ADC

This study is to characterize the destructive single-event latchup (SEL) susceptibility of the LTC1604AIG#90117 (LTC1604) analog/digital converter (ADC). The device was monitored for SEL current events on the power supplies during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. Testing was performed on September 11, 2021.

single-event latchup (SEL)↗
NASA NTRS1980

Release mechanism for releasing and reattaching experiments on the Space Shuttle

The release mechanism (REM) unlatches an experiment so that it can be moved about inside and outside the shuttle bay by the remote manipulator system (RMS), and then reattaches it to the REM base. Operated from the crew compartment after the RMS has been attached to the experiment, the REM releases the experiment by an electric motor driving a gear train and linkage which extracts four pins from holes in four plates. Electrical connectors on the REM are disengaged by the mechanical action of the structural pins retracting from the plates. When the REM releases the experiment, an unlatched indicator is actuated in the crew compartment, and then the experiment can be moved by using the RMS. To reattach the experiment to the REM, the RMS places the experiment with REM attachment angles against the flat, smooth surface of the REM; then the RMS moves the experiment into position for latchup. Actuation of an electric motor drives the four pins into the four holes in the plates. When fully latched, a switch actuated by the motion of the linkage, shuts the electric motor off and gives an indication to the crew compartment that the REM is latched.

Clark, A. V.↗
NASA NTRS1980

A study of single event upsets in static RAM's

Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.

Price, W. E.↗
NASA NTRS1983

Microcircuit radiation effects databank

This databank is the collation of radiation test data submitted by many testers and serves as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. It contains radiation sensitivity results from ground tests and is divided into two sections. Section A lists total dose damage information, and section B lists single event upset cross sections, I.E., the probability of a soft error (bit flip) or of a hard error (latchup).

Source record↗
NASA NTRS1983

Microcircuit radiation effects databank

Radiation test data submitted by many testers is collated to serve as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. Total dose damage information and single event upset cross sections, i.e., the probability of a soft error (bit flip) or of a hard error (latchup) are presented.

Source record↗
NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗
NASA NTRS1986

Single-Event-Upset Studies: A Compilation

Document summarizes 15 studies of single-event upsets covering 60 different types of semiconductor devices. Studies discussed in document include verification of basic reactions induced by heavy ions and protons and surveys of latchup and bit-flip susceptibility of several types of devices and device-fabrication technologies.

Nichols, D. K.↗
NASA NTRS1986

Testing Electronic Devices for Single-Event Upset

Report prepared describes equipment and summarizes both pretest and onsite procedures for testing of digital electronic devices for susceptibility to single-event upset. Term "single-event upset" denotes variety of temporary or permanent bit flips or latchup induced by single particles of ionizing radiation. Vacuum chamber houses device under test while exposed to ion beam. Vacuum chamber and associated equipment must be brought to ion-beam facility for test.

Nichols, D. K.↗
NASA NTRS1988

Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.

Nichols, Donald K.↗