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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗
NASA NTRS1983

Pinhole array capacitor for oxide integrity analysis

The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk processes. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used in this study contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.

Buehler, M. G.↗
NASA NTRS1986

Reducing Sodium Contamination in MOS Devices

Method of removing positive ions from oxides in metal-oxide-semiconductor (MOS) transistors and intergrated circuits ensure freedom from contamination by sodium and other mobile positive ions. Electric field applied during oxide growth to push mobile Na + ions to surface. After cooling from growth temperature, field turned off and Na + contaminated surface layer etched away. New method intended to suplement established methods of minimizing ion contamination, such as scrupulous cleanliness in processing, purging with hydrogen chloride to react with and remove contaminants, and growing extra-thick gate oxide, then etching it to remove large portion of contaminants concentrated near surface.

Dehaye, R. F.↗
NASA NTRS1985

Pinhole array capacitor for oxide integrity analysis

The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk process. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.

Buehler, M. G.↗
NASA NTRS1988

Electro optical performance of an improved deformable mirror device

The design, fabrication, and performance of an improved 128 x 128 deformable mirror device (DMD) are discussed. The present DMD consists of a monolithically formed array of cantilever beams which are electrostatically deflected by an underlying MOS transistor address matrix. In contrast to an earlier version, the improved DMD on-chip address circuitry supports a single video input to the chip, with all demux operations performed on-chip. The cantilever beams are formed by two layers of high-reflectivity aluminum alloy. The dynamic range of the DMD in the Fourier plane at the Nyquist frequency has been determined at greater than 45 dB.

Wu, Wen R.↗
NASA NTRS1993

Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

Burns, M. J.↗
NASA NTRS2003

Total Ionizing Dose Effects in MOS Oxides and Devices

The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.

Oldham, Timothy R.↗
NASA NTRS2002

Dosimetry and microdosimetry using COTS ICs: A comparative study

A new method using an array of MOS transistors formeasuring dose absorbed from ionizing radiation is compared to previous dosimetric methods., The accuracy and precision of dosimetry based on COTS SRAMs, DRAMs, and WPROMs are compared and contrasted. Applications of these devices in various space missions will be discussed. TID results are presented for this summary and microdosimetricresults will be added to the full paper. Finally, an analysis of the optimal condition for a digital dosimeter will be presented.

microdosimetry↗
DOE OSTI2020

Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

MoS 2 has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS 2 field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS 2 Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS 2 provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS 2 transistors with prior studies using other contact metals.

Kwon, Jiseok↗
DOE OSTI2020

High broadband photoconductivity of few-layered MoS 2 field-effect transistors measured using multi-terminal methods: effects of contact resistance

Among the layered two dimensional semiconductors, molybdenum disulfide (MoS 2 ) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light–matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response ( R ) and external quantum efficiency (EQE) of few-atomic layered MoS 2 phototransistors fabricated on a SiO 2 dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm–900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 10 3 A W -1 under white light illumination with an optical power P opt = 0.02 nW. The R value increased to 3.5 × 10 3 A W -1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 10 3 and 6 × 10 3 A W -1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 10 5 % and 10 6 % measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent–dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.

36 MATERIALS SCIENCE↗