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SRAM-based FPGA: high dose test methods using evaluation boards
We present low-cost and effective methods and results for high levels of Total Ionizing Dose testing performed on the Xilinx Kintex UltraScale (20nm) Field-Programmable Gate Array evaluation board using 60Co and 2 MeV electron sources.
Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design
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Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design
Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.
A study of charged particles/radiation damage to VLSI device materials
Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.
Single event effects and laser simulation studies
The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.
CMS HGCAL ECON-D ASIC : Impact of CMOS fabrication process tuning on performance and radiation tolerance
The CMS experiment’s High Granularity Calorimeter (HGCAL) upgrade will replace CMS’s existing endcap calorimeters in preparation for the High Luminosity LHC. To effectively use over 6 million channels of this “imaging”calorimeter, CMS has developed two novel Endcap Concentrator (ECON) ASICs to perform data compression/selection on detector. The ECON-D ASIC operates on the 750kHz data path, and the ECON-T ASIC on the 40MHz trigger path. These 65 nm CMOS ASICs are radiation tolerant to 200 Mrad and low power, operating at less than 2.5 mW/channel. The first full-functionality prototype ECONs were produced and characterized in 2021-23, and an initial engineering run was performed in 2024. ECON-D radiation testing for the engineering run revealed that the chip’s internal SRAMs produce intermittent read errors for a non-negligible fraction of chips. Further investigation indicated that the SRAM performance is highly sensitive to the exact parameters of the CMOS fabrication process. To both study this process sensitivity and mitigate SRAM performance issues, twenty ECON wafers were produced in 2025 with a range of doping concentrations designed to tune the underlying transistor threshold voltage by 0%, 5%, 10%, and 15% from nominal. This talk will present first measurements of ECON-D performance, power consumption, and radiation tolerance for these four variations of CMOS process.
STRV RADMON: An integrated high-energy particle detector
The RADMON (Radiation Monitor) was developed as a compact device with a 4-kbit SRAM particle detector and two p-FET total dose monitors. Thus it can be used as a spacecraft radiation alarm and in situ total dose monitor. This paper discusses the design and calibration of the SRAM for proton, alpha, and heavy ion detection. Upset rates for the RADMON, based on a newly developed space particle flux algorithm, are shown to vary over eight orders of magnitude. On the STRV (Space Technology Research Vehicle) the RADMON's SRAM will be used to detect trapped protons, solar flares, and cosmic rays and to evaluate our ability to predict space results from ground tests.
Gas-Sensing Flip-Flop Circuits
Gas-sensing integrated circuits consisting largely of modified static random-access memories (SRAMs) undergoing development, building on experience gained in use of modified SRAMs as radiation sensors. Each SRAM memory cell includes flip-flop circuit; sensors exploit metastable state that lies between two stable states (corresponding to binary logic states) of flip-flop circuit. Voltages of metastable states vary with exposures of gas-sensitive resistors.
Free-Flying Magnetometer Data System
The Free-Flying Magnetometer (FFM) is an autonomous "sensorcraft" developed at the Jet Propulsion Laboratory (JPL) for the Enstrophy sounding rocket mission. This mission was a collaborative project between the University of New Hampshire, Cornell University and JPL. The science goal of the mission was the study of current filamentation phenomena in the northern auroral region through multipoint measurements of magnetic field. The technical objective of the mission was the proof of concept of the JPL FFM design and the demonstration of an in-situ multipoint measurement technique employing many free-flying spacecraft. Four FFMs were successfully deployed from a sounding rocket launched from Poker Flats, Alaska on February 11, 1999. These hockey-puck-sized (80 mm diameter, 38 mm. height, 250 gram mass) free flyers each carry a miniature 3-axis flux-gate magnetometer that output +/- 2 V signals corresponding to a +/- 60,000 nT measurement range for each axis. The FFM uses a synchronized four-channel Sigma(Delta) Analog-to-Digital Converter (ADC) having a dynamic range of +/- 2.5V and converting at a rate of 279 samples/second/channel. Three channels are used to digitize the magnetometer signals to 17-bit (1.144 nT/bit) resolution. The fourth ADC channel is multiplexed for system monitoring of four temperature sensors and two battery voltages. The FFM also contains two sun sensors, a laser diode which emits a fan-shaped beam, a miniature S-band transmitter for direct communication to the ground station antennas, an ultra-stable Temperature Compensated Crystal Oscillator (TCXO) clock, an integrated data subsystem implemented in a Field-Programmable Gate Array (FPGA), a 4 Mbit Static Random Access Memory (SRAM) for data storage and Lithium Thionyl Chloride batteries for power. Communicating commands to the FFM prior to deployment is achieved with an infrared (IR) link. The FFM IR receiver responds to 9-bit pulse coded signals that are generated by an IR Light Emitting Diode (LED) in the payload for turning FFM power on or off and placing the FFM in a test mode or flight mode. The IR links are also used to synchronize (zero) the clocks onboard all the FFMs through a reset pulse originating from the payload GPS receiver that is issued when the FFMs are in flight mode. The FPGA based data subsystem manages continuous data collection from the four ADC channels and sun sensors, formatting and storing the data to SRAM, and controlling downlink transmission. The transmitter is powered only after a 2547 frame SRAM buffer has been filled (approx. 5 minutes of data). The data is Viterbi encoded and sent to the S-band transmitter via a First-In-First-Out (FIFO) buffer who's output is clocked at 100 bits/second. After the 26-second transmission, the transmitter is turned off to reduce noise coupling to the sensitive magnetometer. The data subsystem control consists of a master state machine that performs data flow management and is interfaced through a prioritized interrupt scheme to state machines that service the ADC, sun sensors and transmitter FIFO. Continuous data collection prevents the missing of data during transmission and provides implicit time tagging of the data acquired by the ADC because of synchronization with the TCXO clock.
Response Modeling of Lightweight Charring Ablators and Thermal Radiation Testing Results
Under NASA's In-Space Propulsion/Aerocapture Program, ARA conducted arc-jet and thermal-radiation ablation test series in 2003 for advanced development, characterization, and response modeling of SRAM-20, SRAM-17, SRAM-14, and PhenCarb-20 ablators. Testing was focused on the future Titan Explorer mission. Convective heating rates (CW) were as high as 153 W/sq cm in the IHF and radiation rates were 100 W/sq cm in the Solar Tower Facility. The ablators showed good performance in the radiation environment without spallation, which was initially a concern, but they also showed higher in-depth temperatures when compared to analytical predictions based on arc-jet thermal-ablation response models. More testing in 2003 is planned in both of these facility to generate a sufficient data base for Titan TPS engineering.
Method for characterizing the upset response of CMOS circuits using alpha-particle sensitive test circuits
A method for predicting the SEU susceptibility of a standard-cell D-latch using an alpha-particle sensitive SRAM, SPICE critical charge simulation results, and alpha-particle interaction physics. A technique utilizing test structures to quickly and inexpensively characterize the SEU sensitivity of standard cell latches intended for use in a space environment. This bench-level approach utilizes alpha particles to induce upsets in a low LET sensitive 4-k bit test SRAM. This SRAM consists of cells that employ an offset voltage to adjust their upset sensitivity and an enlarged sensitive drain junction to enhance the cell's upset rate.
A New Class of Single Event Hard Errors
This paper reports on hard errors induced by single ions in dynamic memories. For ions with atomic number below 80, hard errors in DRAMs appear to be similar to the hard errors reported in previous work on SRAMs. One feature of these hard errors is that they tend to recover gradually with time, because of annealing, and are thus partially recoverable. However, for gold ions, a second type of hard error was discovered which is not recoverable, and appears to be due to catastrophic internal shorting rather than small changes in leakage current. Thus, nonrecoverable errors will likely occur even in devices which eliminate the extreme sensitivity to leakage current that is inherent in 4-T SRAMs and DRAMs. It is important to understand the mechanism that is responsible for nonrecoverable errors, and investigate the effect of device scaling.
STRV RADMON: An Integrated High-Energy Particle Detector
The RADMON (Radiation Monitor) was developed as a compact device with a 4-kbit SRAM particle detector and two p-FET total dose monitors. Thus it can be used as a spacecraft radiation alarm and in situ total dose monitor. This paper discusses the design and calibration of the SRAM for proton, alpha, and heavy ion detection. Upset rates for the RADMON, based on a newly developed space particle flux algorithm, are shown to vary over eight orders of magnitude.
Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)
The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.
Bench-level characterization of a CMOS standard-cell D-latch using alpha-particle sensitive test circuits
A methodology is described for predicting the SEU susceptibility of a standard-cell D-latch using an alpha-particle sensitive SRAM, SPICE critical charge simulation results, and alpha-particle interaction physics. Measurements were made on a 1.6-micron n-well CMOS 4-kb test SRAM irradiated with an Am-241 alpha-particle source. A collection depth of 6.09 micron was determined using these results and TRIM computer code. Using this collection depth and SPICE derived critical charge results on the latch design, an LET threshold of 34 MeV sq cm/mg was predicted. Heavy ion tests were then performed on the latch and an LET threshold of 41 MeV sq cm/mg was determined.
Design and qualification of the SEU/TD Radiation Monitor chip
This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL.