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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field

Abstract Precision of scanning tunneling microscopy (STM) enables control of matter at scales of single atoms. However, transition from atomic-scale manipulation strategies to practical devices encounters fundamental problems in protection of the designer structures formed atop the surface. In this context, STM manipulation of subsurface structures on technologically relevant materials is encouraging. Here, we propose a material platform and protocols for precise manipulation of a buried graphene interface. We show that an electric field from the STM tip reversibly controls breaking and restoring of covalent bonds between the graphene buffer layer and the SiC substrate. The process involves charge redistribution at the atomically sharp interface plane under the epitaxial graphene layer(s). This buried manipulation platform is laterally defined by unit cells from the corresponding (6×6) SiC moiré lattice of the epitaxial graphene. Local and reversible electric-field-induced patterning of graphene heterostructures from the bottom interface creates an alternative architecture concept for their applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Measuring the buried interphase between solid electrolytes and lithium metal using neutrons

Interfaces are the key to next-generation high-energy batteries including solid-state Li metal batteries. In solid-state batteries, the buried nature of solid–solid electrolyte–electrode interfaces makes studying them difficult. Neutrons have significant potential to non-destructively probe these buried solid–solid interfaces. This work presents a comparative study using both neutron depth profiling (NDP) and neutron reflectometry (NR) to study a model lithium metal–lithium phosphorus oxynitride (LiPON) solid electrolyte system. In the NDP data, no distinct interphase is observed at the interface. NR shows a difference between electrodeposited, and vapor deposited LiPON–Li interfaces but finds both are gradient interphases that are less than 30 nm thick. Additional simulations of the LiPON–Li 2 O–Li system demonstrate that NDP has an excellent resolution in the 50 nm–1 μm regime while NR has an ideal resolution from 0.1–200 nm with different sample requirements. Together NDP and NR can provide a complementary understanding of interfaces between Li metal and solid electrolytes across relevant length scales.

Westover, Andrew S. [Oak Ridge National Laboratory↗
DOE OSTI2026

Power conversion in SnS photocathodes made by electrochemical growth is limited by recombination at (002) buried facets

Herzenbergite α-SnS is a promising p-type semiconductor for photovoltaic and solar fuel applications, but current devices are plagued by substantial photovoltage losses. Here we use vibrating Kelvin probe surface photovoltage for the first time to study the recombination losses in microcrystalline SnS photoelectrodes. α-SnS films of varied crystal orientation, size, and shape are obtained by electrochemical growth from aqueous tin( II ) chloride and sodium thiosulfate solutions near room temperature. After application of a CdS passivation layer, the films function as photocathodes for the methylviologen reduction reaction. Photoelectrochemical and surface photovoltage measurements reveal that the performance of these devices is sensitively controlled by mainly the SnS crystal orientation and to a lesser extent by the grain size. For example, the highest charge recombination rates of 8.97 × 10 14 s −1 cm −2 and lowest photocurrent (0.73 mA cm −2 ) and lowest photovoltage (0.12 V) occur for SnS films containing 500 nm crystals with irregular shapes and SnS lattices tilted away from the (001) orientation. On the other hand, the best performance (1.62 mA cm −2 , 0.16 V, 3.32 × 10 12 s −1 cm −2 ) is seen for 1100 nm fully (001) oriented SnS nanoplates. Furthermore, these findings agree with improved charge carrier mobility in the 001 direction and they also show that charge recombination in SnS films occurs mainly at dangling Sn–S bonds at buried (002) facets. Such buried interfaces need to be suppressed for optimized solar energy conversion with SnS.

Najaf, Zainab [University of California, Davis, CA↗
DOE OSTI2022

Digging deeper: Buried layers and interfaces studied by modified total electron yield and soft x-ray absorption spectroscopy

We report on the soft x-ray absorption spectroscopy investigation of thin film capacitors using a modified total electron yield detection mode. This mode utilizes two ammeters instead of one as commonly employed in the classical total electron yield scheme to measure photocurrents of devices under soft x-ray irradiation. The advantage of this configuration over the surface sensitive classical total electron yield mode is that it can provide information from buried layers and interfaces up to a thickness equal to the penetration depth of soft x-rays. The method can be easily adapted to existing synchrotron end stations. We investigate dielectric capacitors with dissimilar electrodes to assess the feasibility of the modified total electron yield method. Furthermore, in operando soft x-ray absorption spectroscopy measurements are performed on ferroelectric capacitors under bias and using two ammeters. The experimental results are discussed in terms of the external and internal photoemission processes and their distribution in thin film capacitors under an external bias condition. The proposed detection method opens the way to perform electronic and chemical state analyses of the buried interfaces and layers in various devices like multiferroic tunnel junctions, memristive devices, etc., during operation under an applied bias.

Kröger, E.↗
DOE OSTI2023

Detecting driving potentials at the buried SiO 2 nanolayers in solar cells by chemical-selective nonlinear x-ray spectroscopy

We present an approach to selectively examine an asymmetric potential in the buried layer of solar cell devices by means of nonlinear x-ray spectroscopy. Detecting second harmonic generation signals while resonant to the SiO 2 core level, we directly observe existence of the band bending effect in the SiO 2 nanolayer, buried in the heterostructures of Al/LiF/SiO 2 /Si, TiO 2 /SiO 2 /Si, and Al 2 O 3 /SiO 2 /Si. Furthermore, the results demonstrate high sensitivity of the method to the asymmetric potential that determines performance of functional materials for photovoltaics or other optoelectronic devices.

14 SOLAR ENERGY↗
DOE OSTI2024

A platform for non-local thermodynamic equilibrium atomic physics research using the buried layer target approach at a kJ level laser facility

Here we present a design and first use of a kJ level laser facility for research of non-local thermodynamic equilibrium atomic physics using the buried layer target method. The target design included a metal layer buried inside a plastic tamper with thicknesses tailored to the expected laser intensities. The target was illuminated from each side by two laser beams with intensities of 0.5–5 × 10 14 W/cm 2 . The advanced diagnostic suite included static and time-resolved imagers and spectrometers with various spectral resolutions. A 3D printed dual elliptically curved spectrometer is presented, and its results are compared to a traditional crystal spectrometer. Experimental results and radiation hydrodynamic simulations demonstrate that the target achieved the desired thermodynamic conditions of n e ≈ 10 21 –10 22 cm -3 and T e ≈ 1–2 keV.

3D printing↗
DOE OSTI2021

Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried $p^- \mathrm{Si/SiO_2}$ interface

The understanding and control of charge carrier interactions with defects at buried insulator/semiconductor interfaces is essential for achieving optimum performance in modern electronics. In this work, we report on the use of scanning ultrafast electron microscopy (SUEM) to remotely probe the dynamics of excited carriers at a Si surface buried below a thick thermal oxide. Our measurements illustrate a previously unidentified SUEM contrast mechanism, whereby optical modulation of the space-charge field in the semiconductor modulates the electric field in the thick oxide, thus affecting its secondary electron yield. By analyzing the SUEM contrast as a function of time and laser fluence we demonstrate the diffusion mediated capture of excited carriers by interfacial traps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel

Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap ( λ ≤ 226 nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (~2 ns) and on/off ratios greater than 10 11 . The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.

42 ENGINEERING↗
DOE OSTI2023

Buried-Electrode Hybrid Bonded Thin-Film Lithium Niobate Electro-Optic Mach-Zehnder Modulators

Hybrid bonded silicon nitride thin-film lithium niobate (TFLN) Mach-Zehnder modulators (MZMs) at 1310 nm were designed with metal coplanar waveguide electrodes buried in the silicon-on-insulator (SOI) chip. Here, the MZM devices showed greatly improved performance compared to earlier devices of a similar design, and similar performance to comparable MZM devices with gold electrodes made on top of the TFLN layer. Both devices achieve a 3-dB electro-optic bandwidth greater than 110 GHz and voltage-driven optical extinction ratios greater than 28 dB. Half-wave voltage-length products (VπL) of 2.8 and 2.5 V∙ cm were measured for the 0.5 and 0.4 cm long buried metal and top gold electrode MZMs, respectively.

42 ENGINEERING↗
DOE OSTI2020

Evidence of Buried Junctions in CdSeTe Absorbers

The introduction of selenium band gap gradients has been shown to be a promising path for improving CdTe devices. Controlling maximum selenium concentration during deposition should allow for better device performance. In this work cross-section electron beam induced current (EBIC) maps were measured for CdSeTe/CdTe devices with as-grown selenium concentration between 0 and 20 percent. Measured EBIC profiles show high collection in the middle of the absorber layer, which differs from past EBIC studies of CdSe/CdTe devices. Increasing as-deposited selenium concentrations resulted in increased collection at this mid-absorber location. Combined with a 2-dimensional numerical model, these results suggest a buried homo-junction in the absorber layer of the device. This buried junction may be associated with a number of composition dependent parameters including electron affinity and p-dopability. Understanding this collection profile and its implications for device performance may be key in optimizing CdSeTe/CdTe devices.

CdSeTe↗
DOE OSTI2020

Discrimination of Small Earthquakes and Buried Single-Fired Chemical Explosions at Local Distances (<150 km) in the Western United States from Comparison of Local Magnitude ( M L ) and Coda Duration Magnitude ( M C )

Seismologists distinguish underground nuclear explosions from more commonly occurring earthquakes using moment tensor inversion, high-frequency P/S amplitude ratios, m b :M s comparisons, and P–pP differential travel times. These methods are generally successful for large seismic events (M >3-4) well recorded at regional-to-teleseismic distances (>150 km); however, it is unclear whether they can be modified to work for small events (M <3) well recorded only at local distances (<150 km). Here, we evaluate a recently proposed, local-distance seismic source discriminant—the difference between local magnitude (M L ) and coda duration magnitude (M C )—using seismograms of earthquakes and buried, single-fired chemical explosions recorded in three regions of the western United States. The quantity M L –M C was previously found to be sensitive to source depth, effectively discriminating mine blasts, induced earthquakes, and very shallow tectonic earthquakes from deeper crustal earthquakes. In this study, we report the first evaluation of M L –M C as a depth discriminant using data from buried, single-fired explosions that, unlike the seismic sources studied earlier, are good analogs for underground nuclear explosions. We find that even when using generic, uncalibrated methods of assigning magnitudes, M L –M C separates single-fired explosions and earthquakes. The area under the receiver operating characteristic curve is 0.92 for 19 explosions and 14 earthquakes in Washington, 0.90 for 22 explosions and 90 earthquakes in Wyoming, and 0.99 for three explosions and 149 earthquakes in Nevada. Finally, M L :M C comparisons have the potential to enhance discrimination based on high-frequency P/S amplitudes ratios—which perform less well at local than regional distances—because the two metrics have complementary sensitivities.

58 GEOSCIENCES↗
DOE OSTI2023

Time-Resolved Structural Measurement of Thermal Resistance across a Buried Semiconductor Heterostructure Interface

The precise control and understanding of heat flow in heterostructures is pivotal for advancements in thermoelectric energy conversion, thermal barrier coatings, and efficient heat management in electronic and optoelectronic devices. In this study, we employ high-angular-resolution time-resolved X-ray diffraction to structurally measure thermal resistance in a laser-excited AlGaAs/GaAs semiconductor heterostructure. Our methodology offers femtometer-scale spatial sensitivity and nanosecond time resolution, enabling us to directly observe heat transport across a buried interface. We corroborate established Thermal Boundary Resistance (TBR) values for AlGaAs/GaAs heterostructures and demonstrate that TBR arises from material property discrepancies on either side of a nearly flawless atomic interface. This work not only sheds light on the fundamental mechanisms governing heat flow across buried interfaces but also presents a robust experimental framework that can be extended to other heterostructure systems, paving the way for optimized thermal management in next-generation devices.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Buried wire gage for wall shear stress measurements

A buried wire gage for measuring wall shear stress in fluid flow was studied and further developed. Several methods of making this relatively new type of gage were examined to arrive at a successful technique that is well-suited for wind-tunnel testing. A series of measurements was made to demonstrate the adequacy of a two-point calibration procedure for these gages. The buried wire gage is also demonstrated to be ideally suited for quantitative measurement of wall shear stress in wind-tunnel testing.

Murthy, V. S.↗
NASA NTRS1982

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.

Bar-Chaim, N.↗
NASA NTRS1986

Development of buried wire gages for measurement of wall shear stress in Blastane experiments

Buried Wire Gages operated from a Constant Temperature Anemometer System are among the special types of instrumentation to be used in the Boundary Layer Apparatus for Subsonic and Transonic flow Affected by Noise Environment (BLASTANE). These Gages are of a new type and need to be adapted for specific applications. Methods were developed to fabricate Gage inserts and mount those in the BLASTANE Instrumentation Plugs. A large number of Gages were prepared and operated from a Constant Temperature Anemometer System to derive some of the calibration constants for application to fluid-flow wall shear-stress measurements. The final stage of the calibration was defined, but could not be accomplished because of non-availability of a suitable flow simulating apparatus. This report provides a description of the Buried Wire Gage technique, an explanation of the method evolved for making proper Gages and the calibration constants, namely Temperature Coefficient of Resistance and Conduction Loss Factor.

Murthy, S. V.↗
NASA NTRS1986

Radar glory from buried craters on icy moons

Three ice-covered moons of Jupiter, in comparison with rocky planets and earth's moon, produce radar echoes of astounding strengths and bizarre polarizations. Scattering from buried craters can explain these and other anomalous properties of the echoes. The role of such craters is analogous to that of the water droplets that create the apparition known as 'the glory', the optically bright region surrounding an observer's shadow on a cloud. Both situations involve the electromagnetic phenomenon of total internal reflection at a dielectric interface, operating in a geometry that strongly favors exact backscattering. Dim surface craters are transformed into bright glory holes by being buried under somewhat denser material, thereby increasing the intensity of their echoes by factors of hundreds. The dielectric interface thus formed at the crater walls nicely accounts for the unusual polarizations of the echoes.

Eshleman, Von R.↗
NASA NTRS1988

Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

An analysis is made of the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. It is found that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TEo guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.

Kurdi, B. N.↗
NASA NTRS1988

Development and calibration of buried wire gages for wall shear stress measurements in fluid flow

Special methods were developed to arrange 'Buried Wire Gage' inserts flush to the contoured flow surfaces of instrument plugs of a boundary-layer flow apparatus. The fabrication process was aimed at producing proper bonding of the sensor wire to the substrate surface, without causing excessive surface waviness. A large number of gages were built and first calibrated for the resistance-temperature characteristics. The gages were then installed in a flow calibration apparatus and operated from a constant temperature anemometer system for a series of flow settings to derive the calibration constants of each of the gages. The flow settings included a range of subsonic freestream Mach numbers in order to help establish the gage calibration characteristics for compressible flow fields. This paper provides a description of the buried wire gage technique, an explanation of the method evolved for making proper gages, the procedure for calibrating the gages and the results of measurements performed for determining the calibration constants.

Murthy, Sreedhara V.↗