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At least 55 records · Page 3

Coating of plasma polymerized film

Plasma polymerized thin film coating and the use of other coatings is suggested for passivation film, thin film used for conducting light, and solid body lubrication film of dielectrics of ultra insulators for electrical conduction, electron accessories, etc. The special features of flow discharge development and the polymerized film growth mechanism are discussed.

Morita, S.↗

A concept for global crop forecasting

The mission, instrumentation, and design concepts for microwave radiometer satellites for continuous crop condition forecasting and monitoring on a global basis are described. Soil moisture affects both crop growth and the dielectric properties of the soil, and can be quantified by analysis of reflected radiance passively received by orbiting spacecraft. A dedicated satellite reading a swath 200 km across, with 1 km and 1 K temperature resolution, could track the time-varying changes of solid moisture, sea ice, and water surface temperature. Launched by the Shuttle into an interim orbit, a boost would place the satellite in a 400 or 700 km orbit. Resolution requirements indicate a 45-725 m diam antenna, with 70 dB gain, operating at frequencies of 1.08, 2.03, and 4.95 GHz to ensure atmospheric transparency. Alternative structural concepts include either double-layer tetrahedral or single-layer geodesic trusses as the basic structural members. An analysis of the electrostatic positioning of the parabolic antenna membrane is outlined.

Lovelace, U. M.↗

Measured and computed performance of a microstrip filter composed of semi-insulating GaAs on a fused quartz substrate

The performance of a microstrip hammerhead filter that has been fabricated on an electrically thin layer of semiinsulating GaAs backed by a fused quartz substrate was measured and compared to results of a three-dimensional finite-difference time-domain (FD-TD) program used to calculate the response of the filter both with and without the GaAs layer. The program, presented by Sheen et al. (1990), discretizes the entire structure and then simulates the propagation of a Gaussian pulse through the filter. The microstrip filter is intended for applications involving ultrathin lifted-off or etched-back GaAs containing both active devices and passive microstrip circuitry backed by a much thicker mechanically rigid low-loss, low-dielectric-constant substrate. The low-pass characteristics of the hammerhead filter with the intermediate GaAs layer are compared with those of the same filter on quartz alone. Both the measured and computed data show a significant shift in cutoff frequency (about 10 percent at the 3 dB points) for a GaAs layer that is 0.007 wavelengths thick at 4 GHz.

Siegel, Peter H.↗

Botswana water and surface energy balance research program. Part 2: Large scale moisture and passive microwaves

The Botswana water and surface energy balance research program was developed to study and evaluate the integrated use of multispectral satellite remote sensing for monitoring the hydrological status of the Earth's surface. The research program consisted of two major, mutually related components: a surface energy balance modeling component, built around an extensive field campaign; and a passive microwave research component which consisted of a retrospective study of large scale moisture conditions and Nimbus scanning multichannel microwave radiometer microwave signatures. The integrated approach of both components are explained in general and activities performed within the passive microwave research component are summarized. The microwave theory is discussed taking into account: soil dielectric constant, emissivity, soil roughness effects, vegetation effects, optical depth, single scattering albedo, and wavelength effects. The study site is described. The soil moisture data and its processing are considered. The relation between observed large scale soil moisture and normalized brightness temperatures is discussed. Vegetation characteristics and inverse modeling of soil emissivity is considered.

Vandegriend, A. A.↗

Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

Yao, H.↗

Bismuth Passivation Technique for High-Resolution X-Ray Detectors

The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

Chervenak, James↗

Comparison of soil dielectric mixing models for Soil Moisture Retrieval using SMAP Brightness Temperature over croplands in India

The accurate estimation of soil moisture (SM) using microwave remote sensing depends mostly on careful selection of retrieval parameters among which the soil dielectric mixing model is the important one. These models are often categorized into empirical, semi-empirical or volumetric based on their methodologies and input data requirements. To study in detail, the comparative performance of four dielectric mixing models -- Wang & Schmugge model, Hallikainen model, Dobson model and Mironov model were used with Soil Moisture Active Passive (SMAP) L-band brightness temperature and Single Channel Algorithm for SM retrieval over agricultural landscapes in India. The highest performance statistics combination in terms of Root Mean Square Error (RMSE), correlation coefficient (R^(2)) and percentage bias (PBIAS) against the concurrent in-situ SM measurements were calculated at the selected validation sites. The overall results indicate that the best performance was given by the Mironov model (RMSE = 0.07 cu. m/cu. m), followed by Wang & Schmugge model (RMSE = 0.08 cu. m3/cu. m), Hallikainen model (RMSE = 0.09 cu. m/cu. m), Dobson model (RMSE = 0.10 cu. m/cu. m) and original SMAP radiometer SM (RMSE = 0.12 cu. m/cu. m). Findings of this study provides important insights into application and performance of dielectric mixing models in mapping surface SM variations. This study also underlines the pivotal role of local conditions for SM retrieval which should be carefully included in the algorithms.

Swati Suman↗

A 311-GHz Fundamental Oscillator Using InP HBT Technology

This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller amount of feedback than the common-emitter design, therefore preserving device gain, and was chosen for the oscillator design. The submillimeter-wave region offers several advantages for sensors and communication systems, such as high resolution and all-weather imaging due to the short-wavelength, and improved communication speeds by access to greater frequency bandwidth. This oscillator circuit is a prototype of the first HBT oscillator operating above 300 GHz. Additional development is necessary to increase the output power of the circuit for radar and imaging applications.

Gaier, Todd↗

Dielectric Elastomer Actuated Systems and Methods

The system of the present invention includes an actuator having at least two electrodes, an elastomeric dielectric film disposed between the two electrodes, and a frame attached to the elastomeric dielectric film. The frame provides a linear actuation force characteristic over a displacement range. The displacement range is preferably the stroke of the actuator. The displacement range can be about 5 mm and greater. Further, the frame can include a plurality of configurations, for example, at least a rigid members coupled to a flexible member wherein the frame provides an elastic restoring force. In preferred embodiments, the rigid member can be, but is not limited to, curved beams, parallel beams, rods and plates. In a preferred embodiment the actuator can further include a passive element disposed between two flexible members such as, for example, links to tune a stiffness characteristic of the actuator. The passive element can be a bi-stable element. Further, the actuator can include a plurality of layers of the elastomeric dielectric film integrated into the frame. The elastomeric film can be made of different materials such as, for example, acrylic, silicone and latex.

Dubowsky, Steven↗

The Canadian Experiment for Freeze/Thaw in 2012 or 2013 CanEx-FT12 or FT13

General objectives of the experiment are: Pre-launch Calibration/Validation of SMAP Freeze/Thaw products and retrieval algorithms and rehearsal for Soil Moisture Active-Passive (SMAP) post launch validation. The basis of the radar freeze-thaw measurement is the large shift in dielectric constant and backscatter (dB) between predominantly frozen & thawed conditions. The Dielectric constant of liquid water varies with frequency, whereas that of pure ice is constant

permafrost↗

Integrated power passives

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

Xie, Huikai↗

Theoretical modelling and experimental data matching for active and passive microwave remote sensing of Earth terrain

Two theoretical models were developed to characterize terrain media: a random medium with a variance, a horizontal correlation length; and a homogeneous dielectric containing discrete scatterers. The earth terrain is modelled as layers of such scattering media bounded by air above and half-space below. Matching the theoretical results with experimental data collected from vegetation and snow-ice fields shows that: (1) for observation angles near nadir, rough surface effects are important; (2) for snow-ice field the horizontal correlation length is greater than the vertical correlation length whereas for vegetation field their relative sizes depend on the types of vegetation; (3) the vertically polarized backscattering cross-section is always larger than the horizontally polarized backscattering cross-section for half-space scattering media; (4) for snow field displaying diurnal change, a three-layer model including a thin top layer caused by sunlight illumination must be used; and (5) for a random medium with equal horizontal and vertical correlation lengths, the measured data can also be matched with a corresponding discrete scatterer model.

Kong, J. A.↗

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

dielectric performance↗

Core Analysis Combining MT (TIPPER) and Dielectric Sensors (Sans EC) in Earth and Space

On terrestrial planets and moons of our solar system cores reveal details about a geological structure's formation, content, and history. The strategy for the search for life is focused first on finding water which serves as a universal solvent, and identifying the rocks which such solvent act upon to release the constituent salts, minerals, ferrites, and organic compounds and chemicals necessary for life. Dielectric spectroscopy measures the dielectric properties of a medium as a function of frequency. Reflection measurements in the frequency range from 300 kHz to 300 MHz were carried out using RF and microwave network analyzers interrogating SansEC Sensors placed on clean geological core samples. These were conducted to prove the concept feasibility of a new geology instrument useful in the field and laboratory. The results show that unique complex frequency spectra can be acquired for a variety of rock core samples. Using a combination of dielectric spectroscopy and computer simulation techniques the magnitude and phase information of the frequency spectra can be converted to dielectric spectra. These low-frequency dielectric properties of natural rock are unique, easily determined, and useful in characterizing geology. TIPPER is an Electro-Magnetic Passive-Source Geophysical Method for Detecting and Mapping Geothermal Reservoirs and Mineral Resources. This geophysical method uses distant lightning and solar wind activity as its energy source. The most interesting deflections are caused by the funneling of electrons into more electrically conductive areas like mineralized faults, water or geothermal reservoirs. We propose TIPPER to be used with SansEC for determining terrain/ocean chemistry, ocean depth, geomorphology of fracture structures, and other subsurface topography characteristics below the ice crust of Jovian moons. NASA envisions lander concepts for exploration of these extraterrestrial icy surfaces and the oceans beneath. One such concept would use a nuclear powered heated tip for melting through the ice sheath of Europa and inserting a down hole SansEC with TIPPER interface. NASA's Juno space probe already on the way to Jupiter as part of the Exploration New Frontiers Program and the planned Europa mission will conduct detailed reconnaissance of Jupiter's moon Europa and investigate whether the icy moon could harbor conditions suitable for life. It has already been observed that Jovian moons have auroras that may serve as naturally occurring active energy sources for a TIPPER instrument.

Mound, Michael C.↗

Millimeter-wave passive ultra-compact imaging technology for synthetic vision & mobile platforms

Substantial technical progress was made on all of the three high-risk subsystems of this program. The subsystems include dielectric antenna, G-band receiver, and electro-optic image processor. Progress is approximately on-schedule for both the receiver and the electro-optic processor development, while greater than anticipated challenges have been discovered in the dielectric antenna development. Much of the information in this report was covered in greater detail in the One-Year Review Meeting held at TTC on 22 February 1996. The performance goals of the dielectric antenna project are: Scan Angle -- 20 deg. desired; Loss -- 6 dB end to end (3 dB average); Frequency -- 206-218 GHz (6% bandwidth); Beam width -- 0.25 deg.; and Length -- 12 inches. The scan angle requirement was chosen to satisfy the needs of aircraft pilots. This requirement, coupled with the presently limited bandwidth processors (1 GHz state-of-the-art and 12 GHz in development in this program) forces the antenna to be dielectric (high scan angle air-filled waveguide-based antennas would be too lossy and their performance would vary too much as a function of frequency). A high dielectric constant (e.g., 10) was initially chosen for the dielectric material. This choice lead to the following fabrication challenges: total thickness variation (TTV) tolerance is 1 micrometer; coupler spacing tolerance is 1 micrometer; width tolerance is larger, but unknown, and the surfaces must have mirror finish. Also of importance is the difficulty in obtaining raw materials that satisfy the overall length requirement of 12 inches while simultaneously satisfying the above specifications.

Olsen, Randall↗

Electrodynamic interactions

The electrodynamic interaction of long metallic tethers with the ionosphere is introduced. Due to the tether's motion across the Earth's field, a polarization electric field is generated along the tether. In a system like the Tethered Satellite System (TSS) where the tether is coated with dielectric and the electrical contact is between its two terminations and the ionosphere, the upper end termination will collect electrons and, in a passive system, the lower end termination will collect ions. Space charge regions will develop around the two terminations of the system, which can be at considerable potential with respect to the unperturbed ionospheric plasma and the current in the tether will be most significantly determined by local processes in such space charge regions. A qualitative view of the global perturbation induced by TSS in the ionosphere is outlined. One of the applications of electrodynamic tethers is that of using them as low frequency wave generators to communicate to the Earth. This application is briefly discussed. An equivalent circuit of the tether system is described. The basic equation of the circuit is given.

Dobrowolny, M.↗

Structure for implementation of back-illuminated CMOS or CCD imagers

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Pain, Bedabrata↗

Deep Charging Evaluation of Satellite Power and Communication System Components

A set of deep charging tests has been carried out by NASA's Marshall Space Flight Center on subscale flight-like samples developed by Space Systems/Loral, LLC. The samples, which included solar array wire coupons, a photovoltaic cell coupon, and a coaxial microwave transmission cable, were placed in passive and active (powered) circuit configurations and exposed to electron radiation. The energy of the electron radiation was chosen to deeply penetrate insulating (dielectric) materials on each sample. Each circuit configuration was monitored to determine if potentially damaging electrostatic discharge events (arcs) were developed on the coupon as a result of deep charging. The motivation for the test, along with charging levels, experimental setup, sample details, and results will be discussed.

Schneider, T. A.↗