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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

plasma-enhanced chemical vapor deposition (PECVD).↗
NASA NTRS2012

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.↗
DOE OSTI2024

Thermodynamic origin of nonvolatility in resistive memory

Electronic switches based on the migration of high-density point defects, or memristors, are poised to revolutionize post-digital electronics. Despite significant research, key mechanisms for filament formation and oxygen transport remain unresolved, hindering our ability to predict and design device properties. For example, experiments have achieved 10 orders of magnitude longer retention times than predicted by current models. Here, using electrical measurements, scanning probe microscopy, and first-principles calculations on tantalum oxide memristors, we reveal that the formation and stability of conductive filaments crucially depend on the thermodynamic stability of the amorphous oxygen-rich and oxygen-poor compounds, which undergo composition phase separation. Including the previously neglected effects of this amorphous phase separation reconciles unexplained discrepancies in retention and enables predictive design of key performance indicators such as retention stability. Furthermore, this result emphasizes non-ideal thermodynamic interactions as key design criteria in post-digital devices with defect densities substantially exceeding those of today’s covalent semiconductors.

36 MATERIALS SCIENCE↗
NASA NTRS1971

Nonvolatile read/write memory element - A concept

Memory, with limited number of programming cycles, is achieved by using verticle, fusible links in series with oxide breakthrough elements. Memory elements are fabricated with integrated circuit technology and are ideal for low power digital computer application.

Cricchi, J. R.↗
NASA NTRS1971

Nonvolatile read/write memory element - A concept

Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.

Cricchi, J. R.↗
NASA NTRS1994

Integrated, nonvolatile, high-speed analog random access memory

This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

Katti, Romney R.↗
NASA NTRS2011

Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics

A plasma-enhanced chemical vapor deposition (PECVD) growth technique has been developed where the choice of starting substrate was found to influence the electrical characteristics of the resulting carbon nanofiber (CNF) tubes. It has been determined that, if the tubes are grown on refractory metallic nitride substrates, then the resulting tubes formed with dc PECVD are also electrically conducting. Individual CNFs were formed by first patterning Ni catalyst islands using ebeam evaporation and liftoff. The CNFs were then synthesized using dc PECVD with C2H2:NH3 = [1:4] at 5 Torr and 700 C, and approximately equal to 200-W plasma power. Tubes were grown directly on degenerately doped silicon <100> substrates with resistivity rho approximately equal to 1-5 meterohm-centimeter, as well as NbTiN. The approximately equal to 200-nanometer thick refractory NbTiN deposited using magnetron sputtering had rho approximately equal to 113 microohm-centimeter and was also chemically compatible with CNF synthesis. The sample was then mounted on a 45 beveled Al holder, and placed inside a SEM (scanning electron microscope). A nanomanipulator probe stage was placed inside the SEM equipped with an electrical feed-through, where tungsten probes were used to make two-terminal electrical measurements with an HP 4156C parameter analyzer. The positive terminal nanoprobe was mechanically manipulated to physically contact an individual CNF grown directly on NbTiN as shown by the SEM image in the inset of figure (a), while the negative terminal was grounded to the substrate. This revealed the tube was electrically conductive, although measureable currents could not be detected until approximately equal to 6 V, after which point current increased sharply until compliance (approximately equal to 50 nA) was reached at approximately equal to 9.5 V. A native oxide on the tungsten probe tips may contribute to a tunnel barrier, which could be the reason for the suppressed transport at low biases. Currents up to approximately 100 nA could be cycled, which are likely to propagate via the tube surface, or sidewalls, rather than the body, which is shown by the I-V in figure (a). Electrical conduction via the sidewalls is a necessity for dc NEMS (nanoelectromechanical system) applications, more so than for the field emission applications of such tubes. During the tests, high conductivity was expected, because both probes were shorted to the substrate, as shown by curve 1 in the I-V characteristic in figure (b). When a tube grown on NbTiN was probed, the response was similar to the approximately equal to 100 nA and is represented by curve 2 in figure (b), which could be cycled and propagated via the tube surface or the sidewalls. However, no measureable currents for the tube grown directly on Si were observed as shown by curve 3 in figure (b), even after testing over a range of samples. This could arise from a dielectric coating on the sidewalls for tubes on Si. As a result of the directional nature of ion bombardment during dc PECVD, Si from the substrate is likely re-sputtered and possibly coats the sidewalls.

Kaul, Anupama B.↗
NASA NTRS2011

Failure Analysis of Nonvolatile Residue (NVR) Analyzer Model SP-1000

National Aeronautics and Space Administration (NASA) subcontractor Wiltech contacted the NASA Electrical Lab (NE-L) and requested a failure analysis of a Solvent Purity Meter; model SP-IOOO produced by the VerTis Instrument Company. The meter, used to measure the contaminate in a solvent to determine the relative contamination on spacecraft flight hardware and ground servicing equipment, had been inoperable and in storage for an unknown amount of time. NE-L was asked to troubleshoot the unit and make a determination on what may be required to make the unit operational. Through the use of general troubleshooting processes and the review of a unit in service at the time of analysis, the unit was found to be repairable but would need the replacement of multiple components.

Potter, Joseph C.↗
NASA NTRS2015

Alternative Nonvolatile Residue Analysis with Contaminant Identification Project

Cleanliness verification is required in numerous industries including spaceflight ground support, electronics, medical and aerospace. Currently at KSC requirement for cleanliness verification use solvents that environmentally unfriendly. This goal of this project is to produce an alternative cleanliness verification technique that is both environmentally friendly and more cost effective.

Technology Portfolio System↗
NASA NTRS2009

Radiation tests of highly scaled high density commercial nonvolatile NAND flash memories update 2009

Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.

Nguyen, Duc N.↗
NASA NTRSDate not supplied

Toward High-Endurance Nonvolatile Reconfigurable Metasurfaces

The applications of adaptive optics extend across multiple sectors, encompassing areas such as LiDAR, biological and chemical sensing, and free-space optical communications. The advent of metasurfaces optics with reconfigurability has offered a versatile platform for the design of compact optical components, offering a compelling alternative to their conventional bulky counterparts. In this study, we introduce the PROWESS (Phase change Reconfigurable Optical WavEfront Synthesis System project at NASA LaRC), electrically reconfigurable metasurfaces using low-loss, high-contrast phase change material (PCM), Ge2Sb2Se4Te integrated with IR-transparent silicon microheater for various practical applications. The talk covers a reliable platform for switching large-scale PCM-based devices utilizing a microheater and an architecture for the metasurface switching within an integrated circuit configuration, which is compatible with standard foundry fabrication processes. The utilization of near- to midinfrared transparent silicon microheater in the proposed architecture opens possibilities for the development of reconfigurable transmissive optics such as filters, zoom lenses, and beam steering modules. We demonstrated switching of 140 µm × 140 µm PCM pixel, on a 200 µm × 200 µm silicon microheater for several thousand cycles. Further, we performed an in-depth investigation into the failure mechanism utilizing techniques such as transmission electron microscopy and thermal modeling. Guidelines for device performance improvement are proposed, and an improved design with larger endurance is shown in progress. With further progress, we aim to unlock the full potential of PCM-based devices and advance the field of adaptive optics with demonstrable examples including a reconfigurable beam steerer for ocean surface flash LiDAR and Navigation Doppler LiDAR for precise lunar landing missions.

metasurface optics↗
NASA NTRSDate not supplied

Advancing Metasurfaces Towards New Frontiers: Nonvolatile Reconfigurable Optics

The applications of adaptive optics extend across multiple sectors, encompassing areas such as LiDAR, biological and chemical sensing, and free-space communications. In this study, we report on the design, fabrication, testing, and modeling of electrically reconfigurable metasurfaces using a low-loss high contrast phase change material, Ge2Sb2Se4Te integrated with an IR-transparent silicon microheater. Through this work, we introduce a reliable architecture for switching PCM-based metasurfaces within an integrated circuit configuration which is compatible with standard foundry fabrication processes. We demonstrate the capability of controlling the transmission of electromagnetic waves through the precise stimulation of PCM-based pixels, each spanning a few hundred microns, over numerous cycles. By leveraging PCM-based pixels, we unlock the potential to create metasurfaces encompassing a diverse range of functionalities such as dielectric filters, metalens, or beam steering devices, which is governed by the design of the meta-atoms. Further, we perform an in-depth investigation into the failure mechanism utilizing techniques such as Fourier transform IR spectroscopy (FTIR), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and thermal modeling. According to our results, due to a sharp temperature rise at the PCM/heater interface, we observe severe delamination of the PCM from the heater. More uniform PCM deposition, better adhesion at the PCM/heater interface, and a more uniform temperature distribution in the device could potentially mitigate the failure and lead to a longer life-time. By addressing these challenges, we aim to unlock the full potential of PCM-based devices and advance the field of adaptive optics.

Phase change material↗
NASA NTRS2004

Safer Electrolytes for Lithium-Ion Cells

A number of nonvolatile, low-flammability liquid oligomers and polymers based on aliphatic organic carbonate molecular structures have been found to be suitable to be blended with ethylene carbonate to make electrolytes for lithium-ion electrochemical cells. Heretofore, such electrolytes have often been made by blending ethylene carbonate with volatile, flammable organic carbonates. The present nonvolatile electrolytes have been found to have adequate conductivity (about 2 mS/cm) for lithium ions and to remain liquid at temperatures down to -5 C. At normal charge and discharge rates, lithiumion cells containing these nonvolatile electrolytes but otherwise of standard design have been found to operate at current and energy densities comparable to those of cells now in common use. They do not perform well at high charge and discharge rates -- an effect probably attributable to electrolyte viscosity. Cells containing the nonvolatile electrolytes have also been found to be, variously, nonflammable or at least self-extinguishing. Hence, there appears to be a basis for the development of safer high-performance lithium-ion cells.

Kejha, Joe↗
DOE OSTI2025

Harnessing ferro-valleytricity in pentalayer rhombohedral graphene for memory and compute

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving pentalayer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable ferro-valleytricity of pentalayer rhombohedral graphene to develop nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less nonvolatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, nondestructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ∼6 nW required per write operation and ∼2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed nonvolatile memory array without modifying the peripheral circuitry. In conclusion, our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

2D materials↗
NASA NTRS1975

Investigation of field induced trapping on floating gates

The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.

Gosney, W. M.↗
NASA NTRS1988

The Pluto-Charon system - The escape of Charon's primordial atmosphere

Although Charon seems to have lost its atmosphere and surface volatiles, a lack of heating that would be sufficient to generate melting and consequent separation of the lighter and heavier nonvolatiles has probably resulted in the outer layers' retention of the primordial mix of nonvolatiles. Spectroscopically-determined relative abundances for the Charon surface should accordingly be representative of its entire mass, and thereby constitutes the basis of an understanding of Charon's origin. The study of Charon's exposed nonvolatile ices may ascertain whether the Pluto-Charon system condensed out of the solar nebula directly or from a protoplanetary nebula.

Trafton, L.↗