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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

The Development of Design Tools for Fault Tolerant Quantum Dot Cellular Automata Based Logic

We are developing software to explore the fault tolerance of quantum dot cellular automata gate architectures in the presence of manufacturing variations and device defects. The Topology Optimization Methodology using Applied Statistics (TOMAS) framework extends the capabilities of the A Quantum Interconnected Network Array Simulator (AQUINAS) by adding front-end and back-end software and creating an environment that integrates all of these components. The front-end tools establish all simulation parameters, configure the simulation system, automate the Monte Carlo generation of simulation files, and execute the simulation of these files. The back-end tools perform automated data parsing, statistical analysis and report generation.

Armstrong, Curtis D.↗
NASA NTRS2003

Low Temperature SQUID for NDE Applications

We have developed a low temperature SuperConducting Quantum Interference Device - SQUID measurement system for detection of defects deep under the surface of aluminum structures using eddy current techniques. The system uses a two dimensional planar inducer with two different excitation frequencies to induce a current in the sample. We have developed a data analysis software program that enabled us to distinguish between round defects (holes), straight defects (slots) and slots close to holes simulating cracks starting from rivets in aluminum structures. We were able to detect defects that are 8mm below the surface. We have also measured the change in phase of the detected signal as a function of depth of the defect. This relationship can be used to determine the depth of hidden flaws. Using this analysis software with the high temperature SQUID system at NASA Langley we were able to detect slots close to holes in layered aluminum sample.

Wincheski, Buzz↗
NASA NTRS1997

BFS Method for Alloys Optimized and Verified for the Study of Ordered Intermetallic Material

The aerospace industry has a need for new metallic alloys that are lightweight and have high strength at elevated temperatures. The BFS (Bozzolo, Ferrante, and Smith) method is a new, computationally efficient and physically sound quantum semi-perturbative approach for describing metals and their defects. Based on a simple interpretation of the alloy formation process that identifies strain and chemical contributions to the energy of the alloy, the method provides an atom-by-atom description of an alloy. Its implementation requires little more than algebra and the solution of transcendental equations. At the NASA Lewis Research Center, we have demonstrated that BFS can investigate the properties of a large number of alloys with a minimum computational effort on low-level computers. This screening allows the selection of the best alloy candidates for a particular application and, therefore, promises large cost savings over current approaches.

Source record↗
NASA NTRS1981

A molecular model for ice nucleation and growth, attachment 1

The quantum mechanical technique is used to study ionic, configurational, and impurity defects in the ice surface. In addition to static calculations of the energetics of the water monomer-ice surface interactions, molecular dynamics studies were initiated. The calculations of the monomer-ice surface interaction, molecular dynamics studies were initiated. The calculations of monomer-ice surface interactions indicate that many adsorption sites exist on the ice surfaces and that the barriers between bonding sites are relatively low. Bonding on the prism face of ice is preferentially above lattice sites.

Plummer, P. L. M.↗
NASA NTRS1998

Identification of Complex Carbon Nanotube Structures

A variety of complex carbon nanotube (CNT) structures have been observed experimentally. These include sharp bends, branches, tori, and helices. They are believed to be formed by using topological defects such as pentagons and heptagons to connect different CNT. The effects of type, number, and arrangement (separation and orientation) of defects on atomic structures and energetics of complex CNT are investigated using topology, quantum mechanics and molecular mechanics calculations. Energetically stable models are derived for identification of observed complex CNT structures.

Han, Jie↗
NASA NTRS1993

Multipole correction of atomic monopole models of molecular charge distribution. I. Peptides

The defects in atomic monopole models of molecular charge distribution have been analyzed for several model-blocked peptides and compared with accurate quantum chemical values. The results indicate that the angular characteristics of the molecular electrostatic potential around functional groups capable of forming hydrogen bonds can be considerably distorted within various models relying upon isotropic atomic charges only. It is shown that these defects can be corrected by augmenting the atomic point charge models by cumulative atomic multipole moments (CAMMs). Alternatively, sets of off-center atomic point charges could be automatically derived from respective multipoles, providing approximately equivalent corrections. For the first time, correlated atomic multipoles have been calculated for N-acetyl, N'-methylamide-blocked derivatives of glycine, alanine, cysteine, threonine, leucine, lysine, and serine using the MP2 method. The role of the correlation effects in the peptide molecular charge distribution are discussed.

NASA Discipline Exobiology↗
NASA NTRS2001

Self-assembled III-V quantum dots: potential for silicon optoelectronics

The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

nanotechnologies quantum dot devices heteroepitaxy↗
NASA NTRS2000

Computational Nanotechnology of Materials, Devices, and Machines: Carbon Nanotubes

The mechanics and chemistry of carbon nanotubes have relevance for their numerous electronic applications. Mechanical deformations such as bending and twisting affect the nanotube's conductive properties, and at the same time they possess high strength and elasticity. Two principal techniques were utilized including the analysis of large scale classical molecular dynamics on a shared memory architecture machine and a quantum molecular dynamics methodology. In carbon based electronics, nanotubes are used as molecular wires with topological defects which are mediated through various means. Nanotubes can be connected to form junctions.

Srivastava, Deepak↗
NASA NTRS2003

Switching and Rectification in Carbon-Nanotube Junctions

Multi-terminal carbon-nanotube junctions are under investigation as candidate components of nanoscale electronic devices and circuits. Three-terminal "Y" junctions of carbon nanotubes (see Figure 1) have proven to be especially interesting because (1) it is now possible to synthesize them in high yield in a controlled manner and (2) results of preliminary experimental and theoretical studies suggest that such junctions could exhibit switching and rectification properties. Following the preliminary studies, current-versus-voltage characteristics of a number of different "Y" junctions of single-wall carbon nanotubes connected to metal wires were computed. Both semiconducting and metallic nanotubes of various chiralities were considered. Most of the junctions considered were symmetric. These computations involved modeling of the quantum electrical conductivity of the carbon nanotubes and junctions, taking account of such complicating factors as the topological defects (pentagons, heptagons, and octagons) present in the hexagonal molecular structures at the junctions, and the effects of the nanotube/wire interfaces. A major component of the computational approach was the use of an efficient Green s function embedding scheme. The results of these computations showed that symmetric junctions could be expected to support both rectification and switching. The results also showed that rectification and switching properties of a junction could be expected to depend strongly on its symmetry and, to a lesser degree, on the chirality of the nanotubes. In particular, it was found that a zigzag nanotube branching at a symmetric "Y" junction could exhibit either perfect rectification or partial rectification (asymmetric current-versus-voltage characteristic, as in the example of Figure 2). It was also found that an asymmetric "Y" junction would not exhibit rectification.

Srivastava, Deepak↗
NASA NTRS2002

Time resolved studies of proton irradiated quantum dots

The effects of proton irradiation on carrier dynamics were measured by time-resolved photoluminescence on InGaAs/GaAs quantum dot structures with different dot density and substrate orientation, as well as on InAlAs/AlGaAs quantum dots.

nanotechnology↗
NASA NTRS2024

Dual-Resonator Kinetic-Inductance Detector for Distinction between Signal and 1/ƒ Frequency Noise

Astronomical kinetic inductance detectors (KIDs), similar to quantum information devices, experience performance-limiting noise from materials. In particular, 1/ƒ (frequency) noise arises from two-level system defects (TLSs) in the circuit dielectrics and material interfaces and can be a dominant noise mechanism. Here, we present a dual-resonator KID (DuRKID), which is designed for improved noise-equivalent power relative to standard 1/ƒ -noise-limited KIDs. In this study we present the DuRKID schematic, a fabricated example, our first measurement results, a theoretical model including 1/ƒ noise, and a system-noise model containing additional noise sources. The circuit consists of two superconducting resonators sharing an electrical capacitance bridge of four capacitors, each of which hosts TLSs. The device is intended to operate using hybridization of the modes, which causes TLSs to either couple to one mode or the other, depending upon which capacitor they reside in. In contrast, the signal will affect a resonator inductance and, due to mode hybridization, this causes correlated frequency changes in both modes. Therefore, one can better distinguish the photon signal from the TLS frequency noise. To achieve hybridization, a TiN inductor is current biased to allow tuning of one bare-resonator mode into degeneracy with the other. Measurements show that the resonator modes hybridize as expected. The inter-resonator coupling and unintentional coupling of the two resonators to transmission lines are also characterized in measurements. A quantum information-science model allows device-parameter extraction from experimental data and a 1/ƒ noise analysis with uncorrelated noise. A system-noise analysis of the DuRKID, with comparisons to standard KIDs, is performed with generation-recombination noise and amplifier noise. The study reveals that the DuRKID can exhibit a large performance advantage over TLS-limited KID detectors.

N Forouzani↗
NASA NTRS2002

Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

nanotechnology DLTS optical properties pn diodes q↗
NASA NTRS1990

A technique for determining Urbach edge, midgap states and electric field in a-Si:H and a-(Si,Ge):H devices

A technique for measuring the Urbach energy of valence band tail states and midgap defect densities in a-Si:H and a-(Si,Ge):H devices is described. The Urbach energy is determined by measuring the quantum efficiency (QE) of delocalized holes in the devices, whereas the midgap state density (DOS) is estimated by measuring the QE of localized holes. The distinction between delocalized and localized holes is obtained from the behavior of the QE upon the application of reverse bias to the device. The QE of holes localized in midgap states increases significantly upon the application of reverse bias because of Frenkel-Poole tunneling, whereas the QE of holes in tail states does not show such an increase. It is shown that upon light soaking the Urbach edge does not change, but the midgap DOS does increase significantly. A primary consequence of the increase in DOS is a decrease in electric field in the low-field middle i region of the p-i-n cell. The decrease in electric field is experimentally estimated by fitting the increase in the reverse bias QE to Frenkel-Poole tunneling.

Dalal, Vikram L.↗
NASA NTRS2002

The Design of Fault Tolerant Quantum Dot Cellular Automata Based Logic

As transistor geometries are reduced, quantum effects begin to dominate device performance. At some point, transistors cease to have the properties that make them useful computational components. New computing elements must be developed in order to keep pace with Moore s Law. Quantum dot cellular automata (QCA) represent an alternative paradigm to transistor-based logic. QCA architectures that are robust to manufacturing tolerances and defects must be developed. We are developing software that allows the exploration of fault tolerant QCA gate architectures by automating the specification, simulation, analysis and documentation processes.

Armstrong, C. Duane↗
NASA NTRS2001

Quantum Mechanical Modeling of Ballistic MOSFETs

The objective of this project was to develop theory, approximations, and computer code to model quasi 1D structures such as nanotubes, DNA, and MOSFETs: (1) Nanotubes: Influence of defects on ballistic transport, electro-mechanical properties, and metal-nanotube coupling; (2) DNA: Model electron transfer (biochemistry) and transport experiments, and sequence dependence of conductance; and (3) MOSFETs: 2D doping profiles, polysilicon depletion, source to drain and gate tunneling, understand ballistic limit.

Svizhenko, Alexei↗
NASA NTRS1990

AlSb/InAs/AlSb quantum wells

Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.

Kroemer, Herbert↗
NASA NTRS1991

Phase transitions triggered by quantum fluctuations in the inflationary universe

The dynamics of a second-order phase transition during inflation, which is induced by time-variation of spacetime curvature, is studied as a natural mechanism to produce topological defects of typical grand unification scales such as cosmic strings or global textures. It is shown that their distribution is almost scale-invariant with small- and large-scale cutoffs. Also discussed is how these cutoffs are given.

Nagasawa, Michiyasu↗
NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗