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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Resistive synaptic interconnects for electronic neural networks

The use of the alpha-Ge(1-x):Al(x) and alpha-Ge(1-x):Cu(x) alloys and Pt/Al2O3 cermet thin films as resistive interconnects for binary synaptic memory arrays is evaluated. The fabrication of the 10-20 microns long, 10 microns wide, and 0.1 micron thick interconnects from the alloys and cermet is described. The current-voltage and switching characteristics of the as-deposited films and the patterned test structure are studied. The resistivity, uniformity, stability, and compatibility of the interconnects are examined. It is observed that alpha-Ge(1-x):Cu(x) alloys have a wide resistivity range and low temperature coefficients of resistance; however, their long-term stability is limited due to their low crystallization temperature. It is detected that the alpha-Ge(1-x):Al(x) alloys have higher crystallization temperatures and their resistivity is not greatly affected by large changes in metal content. The Pt/Al2O3 samples display excellent stability, easy fabrication, and control of resistivity with metal content.

Lamb, J. L.↗
NASA NTRS2011

Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters

A circuit topography is used to create usable, digital logic gates using N (negatively doped) channel junction field effect transistors (JFETs), load resistors, level shifting resistors, and supply rails whose values are based on the DC parametric distributions of these JFETs. This method has direct application to the current state-of-the-art in high-temperature (300 to 500 C and higher) silicon carbide (SiC) device production, and defines an adaptation to the logic gate described in U.S. Patent 7,688,117 in that, by removing the level shifter from the output of the gate structure described in the patent (and applying it to the input of the same gate), a source-coupled gate topography is created. This structure allows for the construction AND/OR (sum of products) arrays that use far fewer transistors and resistors than the same array as constructed from the gates described in the aforementioned patent. This plays a central role when large multiplexer constructs are necessary; for example, as in the construction of memory. This innovation moves the resistive level shifter from the output of the basic gate structure to the front as if the input is now configured as what would be the output of the preceding gate, wherein the output is the two level shifting resistors. The output of this innovation can now be realized as the lone follower transistor with its source node as the gate output. Additionally, one may leave intact the resistive level shifter on the new gate topography. A source-coupled to direct-coupled logic translator will be the result.

Krasowski, Michael J.↗
NASA NTRS1990

Solid-state thin-film memistor for electronic neural networks

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

Thakoor, S.↗
NASA NTRS2007

The Naturalistic Flight Deck System: An Integrated System Concept for Improved Single-Pilot Operations

This paper reviews current and emerging operational experiences, technologies, and human-machine interaction theories to develop an integrated flight system concept designed to increase the safety, reliability, and performance of single-pilot operations in an increasingly accommodating but stringent national airspace system. This concept, know as the Naturalistic Flight Deck (NFD), uses a form of human-centered automation known as complementary-automation (or complemation) to structure the relationship between the human operator and the aircraft as independent, collaborative agents having complimentary capabilities. The human provides commonsense knowledge, general intelligence, and creative thinking, while the machine contributes specialized intelligence and control, extreme vigilance, resistance to fatigue, and encyclopedic memory. To support the development of the NFD, an initial Concept of Operations has been created and selected normal and non-normal scenarios are presented in this document.

Schutte, Paul C.↗
NASA NTRS2018

Polyurethane Microparticles for Stimuli Response and Reduced Oxidative Degradation in Highly Porous Shape Memory Polymers

Shape memory polymers (SMPs) have been found to be promising biomaterials for a variety of medical applications; however, the clinical translation of such technology is dependent on tailorable properties such as gravimetric changes in degradation environments. For SMPs synthesized from amino-alcohols, oxidation resulting in rapid mass loss may be problematic in terms of loss of material functionality as well as toxicity and cytocompatibility concerns. Control of gravimetric changes was achieved through the incorporation of small molecule antioxidants, either directly into the polymer matrix or included in microparticles to form a SMP composite material. Direct incorporation of small molecule antioxidants, such as phenolic alcohols, was found to alter shape memory attributes and increase elastic modulus at the expense of the strain to failure. Such changes could not ensure retention of the antioxidants and therefore did not increase oxidative stability. However, the inclusion of antioxidants in microparticles was found to produce materials with similar thermomechanical and shape memory properties while increasing oxidative resistance compared to controls. The microparticle composite SMPs also act as a platform for environmental sensing, such as pH-dependent fluorescence shifts and payload release, as demonstrated by fluorescent dyes and the release of antioxidants. The use of polyurethane-urea microparticles in porous SMPs is demonstrated to increase biostability of the materials, by approximately 25%, and ultimately extend their lifespan for use in aneurysm occlusion as determined through calculated in vivo degradation rates corresponding to a porcine aneurysm environment.

Weems, A. C.↗
NASA NTRS2013

Fatigue Resistance of Liquid-assisted Self-repairing Aluminum Alloys Reinforced with Shape Memory Alloys

A self-repairing aluminum-based composite system has been developed using a liquid-assisted healing theory in conjunction with the shape memory effect of wire reinforcements. The metal-metal composite was thermodynamically designed to have a matrix with a relatively even dispersion of a low-melting eutectic phase, allowing for repair of cracks at a predetermined temperature. Additionally, shape memory alloy (SMA) wire reinforcements were used within the composite to provide crack closure. Investigators focused the research on fatigue cracks propagating through the matrix in order to show a proof-of-concept Shape Memory Alloy Self-Healing (SMASH) technology for aeronautical applications.

Wright, M. Clara↗
DOE OSTI2025

Dual-ion ECRAM as a stable and accurate analog synapse

Electrochemical random-access memory (ECRAM) works by tuning the bulk electronic conductance of functional materials via reversible, electrochemical insertion of ions, resulting in stable analog resistive switching, attractive for analog in-memory and neuromorphic computing. However, achieving fast programming for training and long retention for inference has been elusive. Protonic ECRAM demonstrates fast programming but insufficient retention, while oxygen-based ECRAM with excellent retention requires elevated programming temperatures. Cu-based ECRAM offers a compromise, with an activation energy (E A ) of ≈0.76 eV between protons (E A ≈ 0.4 eV) and oxygen (E A > 1 eV), enabling extensive retention and room temperature programming. Combining Cu 2+ ions with protons to form a dual-ion ECRAM, we demonstrate two distinct switching behaviors: fast switching at ≤5 V, (E A ≈ 0.45 eV) via protons, and nonvolatile, room temperature switching at ≥8 V, with E A ≈ 0.76 eV via Cu 2+ ions. In conclusion, the Cu-based state exhibits a wide conductance range, with excellent retention, low noise, and linear current-voltage behavior, achieving digital-equivalent ImageNet inference accuracy.

analog in-memory computing↗
DOE OSTI2025

SULI Deliverables Using: Python-B1500 [Slides]

A new electrical setup for testing ECRAM devices is described in this presentation. This presentation details the background of ECRAM devices, how the B1500 is used to program ECRAM devices, and the python GUI that was created for controlling the B1500. ECRAM devices are a form of non-volatile memory. The stored data is the resistance between two of the terminals on the device. Using only the B1500, the ECRAM devices can be programmed and the state read out. This creates a simple, logical testing setup. The overall setup was successful, ECRAM devices could easily be programmed and measured. However, there is still room for improvement. Specifically, in the creation of an automated “Program” feature and a “Data Collection” feature. These features will require additional advances in the understanding of ECRAM devices but will greatly automate and improve the current data collection and application of ECRAM devices.

42 ENGINEERING↗
NASA NTRS1990

Forward Bias Inhibits Single-Event Upsets

Bipolar integrated circuits more resistant to ionizing radiation. Tests show resistance of bipolar integrated logic or memory circuit by single-event upsets increased by imparting forward bias to diode constituted by buried layer of substrate and collector.

Zoutendyk, John A.↗
NASA NTRS1990

Memory switches based on metal oxide thin films

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Ramesham, Rajeshuni↗
DOE OSTI2025

CRADA 2022-03 Final Report: Advanced Bearing Materials for Harsh Service Conditions

Develop advanced bearing materials for hydrogen gas turbines and wind turbines. Two candidate materials have been selected based on Ames lab’s recent work on high entropy alloys and shape memory alloys. These materials are designed to exhibit a balance of hardness, strength, toughness, and corrosion resistance. The hydrogen diffusion coefficient in the NiTi based shape memory alloy is two order of magnitude lower than that of the conventional case hardened bearing steel. We plan to atomize these materials into powders, additive manufacture cylindrical bearings, then test these bearing for rolling-contact fatigue, corrosion properties, and hydrogen embrittlement. We are a vertically integrated team comprises of national labs, bearing manufacturers, raw material powders makers, and aircraft gas turbine manufacturer.

Argibay, Nicolas [Ames Laboratory (AMES), Ames, IA↗
NASA NTRS2020

Comparing Cumulative Flight Thermal Fatigue to Ground Test Results for Memory Components on the Mars Curiosity Rover

This paper explores the methods used to examine Mars Curiosity Rover’s flight temperature data to the Package Qualification and Verification (PQV) accelerated thermal cycle life test data in response to flight anomalies. The redundant Rover Compute Element (RCE-A, B) has experienced an inability to mount the flash memory several times. The leading cause of these anomalies is likely the loss of electrical connectivity, which is theorized to be due to cracks on the memory component solder joints by thermal cycle fatigue. To investigate this theory, the number of thermal cycles accumulated in flight was compared to PQV accelerated thermal cycle life test data. The goal of this study was to inform mission operations of the risk associated with thermal cycling damage on the RCE. However, since the RCE-B does not have continuous temperature data from the Platinum Resistance Thermometer (PRT) closest to the flash memory, a model was made to correlate continuous data from two other nearby sensors on the RCE-B to the noncontiguous sensor. Using the Rainflow Counting Algorithm, the reconstituted data was converted into the number of equivalent thermal cycles. The Coffin-Manson Equation was used to compare flight thermal cycles to the PQV test. The accelerated life test showed cracking on the memory component solder joints after 500 cycles of 80°C temperature excursions. This study found that the RCE-A and RCE-B have undergone an equivalent of 144 and 430 cycles of 80°C temperature excursions during flight, respectively.

Berger, Lindsey N↗
NASA NTRS2021

Comparing Cumulative Flight Thermal Fatigue to Ground Test Results for Memory Components on the Mars Curiosity Rover

This paper explores the methods used to examine Mars Curiosity Rover’s flight temperature data in relation to the Package Qualification and Verification (PQV) accelerated thermal cycle life test data in response to flight anomalies. The redundant Rover Compute Element (RCE-A, B) has experienced an inability to mount the flash memory several times. The leading cause of these anomalies is likely the loss of electrical connectivity, which is theorized to be due to cracks on the memory component solder joints by thermal cycle fatigue. To investigate this theory, the number of thermal cycles accumulated in flight was compared to PQV accelerated thermal cycle life test data. The goal of this study was to inform mission operations of the risk associated with thermal cycling damage on the RCE. However, since the RCE-B does not have continuous temperature data from the Platinum Resistance Thermometer (PRT) closest to the flash memory, a model was made to correlate continuous data from two other nearby sensors on the RCE-B to the noncontiguous sensor. Using the Rainflow Counting Algorithm, the reconstituted data was converted into the number of equivalent thermal cycles. The Coffin-Manson Equation was used to compare flight thermal cycles to the PQV test. The accelerated life test showed cracking on the memory component solder joints after 500 cycles of 80°C temperature excursions. This study found that the RCE-A and RCE-B have undergone an equivalent of 144 and 430 cycles of 80°C temperature excursions during flight, respectively.

Bell, Charles↗
NASA NTRS1990

Solid-state reprogrammable analog resistive devices for electronic neural networks

The fabrication and performance of WO3-based, solid-state, three-terminal device configurations as programmable analog memory elements are reported. These transistorlike device structures exhibit good resistance progammability with a remarkable resolution of a few percent of the resistive strength over a four orders of magnitude dynamic range. The most critical component of these devices is an insulating layer between the active WO3 and the cation donor layer. The progamming characteristics and operation mechanisms of the device are described, and probable reaction mechanisms critical to the device stability are discussed.

Ramesham, R.↗
NASA NTRS1982

Single event upset vulnerability of selected 4K and 16K CMOS static RAM's

Upset thresholds for bulk CMOS and CMOS/SOS RAMS were deduced after bombardment of the devices with 140 MeV Kr, 160 MeV Ar, and 33 MeV O beams in a cyclotron. The trials were performed to test prototype devices intended for space applications, to relate feature size to the critical upset charge, and to check the validity of computer simulation models. The tests were run on 4 and 1 K memory cells with 6 transistors, in either hardened or unhardened configurations. The upset cross sections were calculated to determine the critical charge for upset from the soft errors observed in the irradiated cells. Computer simulations of the critical charge were found to deviate from the experimentally observed variation of the critical charge as the square of the feature size. Modeled values of series resistors decoupling the inverter pairs of memory cells showed that above some minimum resistance value a small increase in resistance produces a large increase in the critical charge, which the experimental data showed to be of questionable validity unless the value is made dependent on the maximum allowed read-write time.

Kolasinski, W. A.↗
DOE OSTI2026

Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa 2 Cu 3 O x with Excess Cu Addition

Resistive switching technologies have the potential not only to create large efficiency gains in computer memory but also to revolutionize emerging fields such as neuromorphic computing. In this paper, we report on novel resistive switching behavior in devices made from room-temperature-grown Cu-rich amorphous YBa 2 Cu 3 O x (YBCO) films, a material otherwise well-known as a high-temperature superconductor. In Nb:STO substrate/amorphous YBCO film (≈200 nm)/metallic Cu (15 nm)/metallic Pt (15 nm) devices, we demonstrate that the resistive switching can be tuned between mechanisms involving extended areas of the YBCO/electrode interface and a single-point filamentary mechanism simply by changing the Cu content of the deposition target and hence in the films. Changing the Cu content can also be used to optimize the properties of the devices further, with devices with an added 15 mol % of Cu in YBCO initially providing an on/off ratio >100, switching endurance potential >6500 cycles, and state retention >2 × 10 4 s, all at low switching fields of 0.3 MV/cm. The amalgam of promising resistive switching properties, fast growth (150 nm/min) at room temperature, and tuneability of the switching mechanism indicates the strong potential of this proof-of-concept amorphous system for future memory applications.

Cu↗
NASA NTRS2010

Modeling of Sonos Memory Cell Erase Cycle

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

Phillips, Thomas A.↗
DOE OSTI2025

Interactions Enhance Ramp Reversal Memory in Locally Phase Separated Materials

The ramp-reversal memory (RRM) effect in metal–insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and non-volatile memory devices. Our previous defect motion model successfully explained RRM in vanadium dioxide (VO 2 ), capturing observed critical temperature shifts and memory accumulation throughout the sample. However, this approach lacked interactions between metallic and insulating domains. Here, we extend our model by combining a correlated Random Field Ising Model with defect diffusion-segregation, enabling accurate hysteresis modeling while predicting the relationship between RRM and domain interactions. Our simulations demonstrate that the maximum RRM occurs when the turnaround temperature approaches the inflection point. This peak in RRM vs. turnaround temperature is consistent with prior transport measurements, as well as our own optical measurements reported here. Significantly, we find that increasing nearest-neighbor interactions enhances the maximum memory effect, thus providing a clear mechanism for optimizing RRM performance. Since our model employs minimal assumptions, we predict that RRM should be a widespread phenomenon in materials exhibiting patterned phase coexistence of electronic domains. This work not only advances fundamental understanding of memory behavior in TMOs but also establishes a much-needed theoretical framework for optimizing device applications.

36 MATERIALS SCIENCE↗